CN101313387B - 激光加工方法 - Google Patents

激光加工方法 Download PDF

Info

Publication number
CN101313387B
CN101313387B CN2006800432102A CN200680043210A CN101313387B CN 101313387 B CN101313387 B CN 101313387B CN 2006800432102 A CN2006800432102 A CN 2006800432102A CN 200680043210 A CN200680043210 A CN 200680043210A CN 101313387 B CN101313387 B CN 101313387B
Authority
CN
China
Prior art keywords
processed
cutting
cut
region
laser processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2006800432102A
Other languages
English (en)
Chinese (zh)
Other versions
CN101313387A (zh
Inventor
坂本刚志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN101313387A publication Critical patent/CN101313387A/zh
Application granted granted Critical
Publication of CN101313387B publication Critical patent/CN101313387B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
CN2006800432102A 2005-11-18 2006-11-16 激光加工方法 Active CN101313387B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP334734/2005 2005-11-18
JP2005334734A JP4237745B2 (ja) 2005-11-18 2005-11-18 レーザ加工方法
PCT/JP2006/322871 WO2007058262A1 (ja) 2005-11-18 2006-11-16 レーザ加工方法

Publications (2)

Publication Number Publication Date
CN101313387A CN101313387A (zh) 2008-11-26
CN101313387B true CN101313387B (zh) 2010-10-06

Family

ID=38048646

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800432102A Active CN101313387B (zh) 2005-11-18 2006-11-16 激光加工方法

Country Status (7)

Country Link
US (2) US7754583B2 (enExample)
EP (1) EP1956640B1 (enExample)
JP (1) JP4237745B2 (enExample)
KR (1) KR101341675B1 (enExample)
CN (1) CN101313387B (enExample)
TW (1) TWI433219B (enExample)
WO (1) WO2007058262A1 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
AU2003211581A1 (en) 2002-03-12 2003-09-22 Hamamatsu Photonics K.K. Method of cutting processed object
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
DE60313900T2 (de) 2002-03-12 2008-01-17 Hamamatsu Photonics K.K., Hamamatsu Methode zur Trennung von Substraten
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
WO2004080643A1 (ja) * 2003-03-12 2004-09-23 Hamamatsu Photonics K.K. レーザ加工方法
EP2332687B1 (en) * 2003-07-18 2015-02-18 Hamamatsu Photonics K.K. Method of laser beam machining a machining target using pulsed laser beam and expanded tape for cutting a machining target
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
KR101336523B1 (ko) 2004-03-30 2013-12-03 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법 및 반도체 칩
CN101434010B (zh) * 2004-08-06 2011-04-13 浜松光子学株式会社 激光加工方法及半导体装置
JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4907965B2 (ja) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4907984B2 (ja) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
US7897487B2 (en) 2006-07-03 2011-03-01 Hamamatsu Photonics K.K. Laser processing method and chip
JP5183892B2 (ja) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
JP4954653B2 (ja) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 レーザ加工方法
CN101516566B (zh) * 2006-09-19 2012-05-09 浜松光子学株式会社 激光加工方法和激光加工装置
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
EP2070636B1 (en) * 2006-10-04 2015-08-05 Hamamatsu Photonics K.K. Laser processing method
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP4985291B2 (ja) * 2007-10-01 2012-07-25 株式会社デンソー ウェハの加工方法
JP5342772B2 (ja) * 2007-10-12 2013-11-13 浜松ホトニクス株式会社 加工対象物切断方法
JP5449665B2 (ja) * 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5254761B2 (ja) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 レーザ加工装置
JP5241527B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
JP5241525B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
CN102307699B (zh) 2009-02-09 2015-07-15 浜松光子学株式会社 加工对象物的切断方法
JP5639997B2 (ja) 2009-04-07 2014-12-10 浜松ホトニクス株式会社 レーザ加工装置
JP5491761B2 (ja) 2009-04-20 2014-05-14 浜松ホトニクス株式会社 レーザ加工装置
JP5476063B2 (ja) * 2009-07-28 2014-04-23 浜松ホトニクス株式会社 加工対象物切断方法
JP5479924B2 (ja) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
KR20130039955A (ko) 2011-10-13 2013-04-23 현대자동차주식회사 용접용 레이저 장치
US9040389B2 (en) * 2012-10-09 2015-05-26 Infineon Technologies Ag Singulation processes
CN104944363B (zh) * 2014-03-26 2017-12-19 中芯国际集成电路制造(上海)有限公司 一种mems器件结构的制作方法
US10141265B2 (en) * 2016-12-29 2018-11-27 Intel IP Corporation Bent-bridge semiconductive apparatus
JP6991475B2 (ja) 2017-05-24 2022-01-12 協立化学産業株式会社 加工対象物切断方法
CN109128625A (zh) * 2018-09-29 2019-01-04 安徽钟南人防工程防护设备有限公司 一种应力自消式焊接装置
US10589445B1 (en) * 2018-10-29 2020-03-17 Semivation, LLC Method of cleaving a single crystal substrate parallel to its active planar surface and method of using the cleaved daughter substrate
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7656850B2 (ja) 2020-02-20 2025-04-04 協立化学産業株式会社 加工対象物切断方法及び樹脂塗布装置
JP2023046922A (ja) * 2021-09-24 2023-04-05 株式会社ディスコ 板状物の加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260407A (ja) * 1987-04-17 1988-10-27 三菱電機株式会社 半導体ウエハの分割装置およびその分割方法
JPH03261162A (ja) * 1990-03-12 1991-11-21 Fujitsu Ltd 半導体装置の製造方法
JP3261162B2 (ja) 1992-06-25 2002-02-25 松下電工株式会社 遠隔監視制御システム
JP3751650B2 (ja) * 1995-01-10 2006-03-01 浜松ホトニクス株式会社 静電気中和装置
JP3178524B2 (ja) * 1998-11-26 2001-06-18 住友重機械工業株式会社 レーザマーキング方法と装置及びマーキングされた部材
JP2001211044A (ja) * 2000-01-25 2001-08-03 Matsushita Electric Ind Co Ltd 弾性表面波デバイスの製造方法
JP2002066865A (ja) 2000-09-01 2002-03-05 Disco Abrasive Syst Ltd 切削装置
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US6656749B1 (en) * 2001-12-13 2003-12-02 Advanced Micro Devices, Inc. In-situ monitoring during laser thermal annealing
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
JP2005129607A (ja) 2003-10-22 2005-05-19 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4402974B2 (ja) * 2004-02-09 2010-01-20 株式会社ディスコ ウエーハの分割方法
JP2005268752A (ja) * 2004-02-19 2005-09-29 Canon Inc レーザ割断方法、被割断部材および半導体素子チップ
KR101336523B1 (ko) 2004-03-30 2013-12-03 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법 및 반도체 칩
KR101336402B1 (ko) 2004-03-30 2013-12-04 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법 및 반도체 칩
JP4536407B2 (ja) 2004-03-30 2010-09-01 浜松ホトニクス株式会社 レーザ加工方法及び加工対象物
JP4745271B2 (ja) 2007-03-08 2011-08-10 株式会社日本触媒 亜酸化窒素分解用触媒および亜酸化窒素含有ガスの処理方法

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
JP平3-261162A 1991.11.21
JP昭63-260407A 1988.10.27
JP特开2001-211044A 2001.08.03
JP特开2002-66865A 2002.03.05
JP特开2005-223285A 2005.08.18
JP特开平8-190992A 1996.07.23
JP特开昭47-45271A 1972.12.25

Also Published As

Publication number Publication date
KR20080074855A (ko) 2008-08-13
US7754583B2 (en) 2010-07-13
JP2007142206A (ja) 2007-06-07
US20100227453A1 (en) 2010-09-09
WO2007058262A1 (ja) 2007-05-24
EP1956640B1 (en) 2016-01-27
KR101341675B1 (ko) 2013-12-16
EP1956640A4 (en) 2009-09-16
CN101313387A (zh) 2008-11-26
US20090162994A1 (en) 2009-06-25
JP4237745B2 (ja) 2009-03-11
TWI433219B (zh) 2014-04-01
US8124500B2 (en) 2012-02-28
TW200731375A (en) 2007-08-16
EP1956640A1 (en) 2008-08-13

Similar Documents

Publication Publication Date Title
CN101313387B (zh) 激光加工方法
CN100587915C (zh) 激光加工方法
CN101516565B (zh) 激光加工方法
TWI452615B (zh) 加工對象物切斷方法
CN101146642B (zh) 激光加工方法
CN1938827B (zh) 激光加工方法及半导体芯片
CN101351870B (zh) 激光加工方法及半导体芯片
CN101516566B (zh) 激光加工方法和激光加工装置
CN101242927B (zh) 激光加工方法
CN100355031C (zh) 基板的分割方法
CN1938826A (zh) 激光加工方法及加工对象物
CN1938828A (zh) 激光加工方法及半导体芯片
JP5322418B2 (ja) レーザ加工方法及びレーザ加工装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant