CN101288150B - 磁性器件及其形成技术 - Google Patents

磁性器件及其形成技术 Download PDF

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Publication number
CN101288150B
CN101288150B CN2006800305446A CN200680030544A CN101288150B CN 101288150 B CN101288150 B CN 101288150B CN 2006800305446 A CN2006800305446 A CN 2006800305446A CN 200680030544 A CN200680030544 A CN 200680030544A CN 101288150 B CN101288150 B CN 101288150B
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China
Prior art keywords
layer
underlying layer
dielectric layer
tunnel junction
underlying
Prior art date
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Expired - Fee Related
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CN2006800305446A
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English (en)
Chinese (zh)
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CN101288150A (zh
Inventor
S·K·卡纳卡萨巴帕斯
M·C·盖迪斯
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
CN2006800305446A 2005-08-23 2006-05-04 磁性器件及其形成技术 Expired - Fee Related CN101288150B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/209,951 2005-08-23
US11/209,951 US7399646B2 (en) 2005-08-23 2005-08-23 Magnetic devices and techniques for formation thereof
PCT/US2006/017418 WO2007024300A2 (en) 2005-08-23 2006-05-04 Magnetic devices and techniques for formation thereof

Publications (2)

Publication Number Publication Date
CN101288150A CN101288150A (zh) 2008-10-15
CN101288150B true CN101288150B (zh) 2010-05-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800305446A Expired - Fee Related CN101288150B (zh) 2005-08-23 2006-05-04 磁性器件及其形成技术

Country Status (7)

Country Link
US (2) US7399646B2 (enExample)
EP (1) EP1917678B1 (enExample)
JP (1) JP4939537B2 (enExample)
KR (1) KR101027226B1 (enExample)
CN (1) CN101288150B (enExample)
TW (1) TW200729412A (enExample)
WO (1) WO2007024300A2 (enExample)

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CN108369852A (zh) * 2016-04-13 2018-08-03 深圳线易科技有限责任公司 具有集成磁性器件的转接板

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JP5010650B2 (ja) * 2009-08-11 2012-08-29 株式会社東芝 磁気抵抗メモリ
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8981502B2 (en) * 2010-03-29 2015-03-17 Qualcomm Incorporated Fabricating a magnetic tunnel junction storage element
EP3157060B1 (en) 2010-12-17 2018-03-07 Everspin Technologies, Inc. Magnetic random access memory integration having improved scaling
US8921959B2 (en) 2011-07-26 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
US8881209B2 (en) 2012-10-26 2014-11-04 Mobitv, Inc. Feedback loop content recommendation
US9172033B2 (en) 2013-07-03 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
US9318696B2 (en) 2014-03-03 2016-04-19 Qualcomm Incorporated Self-aligned top contact for MRAM fabrication
US9847473B2 (en) 2015-04-16 2017-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM structure for process damage minimization
US9490168B1 (en) 2015-05-13 2016-11-08 International Business Machines Corporation Via formation using sidewall image transfer process to define lateral dimension
US10707411B1 (en) 2015-06-19 2020-07-07 Marvell International Ltd. MRAM structure for efficient manufacturability
US9502640B1 (en) * 2015-11-03 2016-11-22 International Business Machines Corporation Structure and method to reduce shorting in STT-MRAM device
US10276436B2 (en) 2016-08-05 2019-04-30 International Business Machines Corporation Selective recessing to form a fully aligned via
KR20190038945A (ko) 2016-08-29 2019-04-09 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 준원자 층 에칭 방법
KR102537097B1 (ko) 2017-02-23 2023-05-25 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 유사 원자층 에칭 방법
TWI761461B (zh) 2017-02-23 2022-04-21 日商東京威力科創股份有限公司 用於製造自對準塊體結構之矽氮化物心軸的異向性抽出方法
US9966337B1 (en) 2017-03-15 2018-05-08 International Business Machines Corporation Fully aligned via with integrated air gaps
CN107342240B (zh) * 2017-06-08 2020-12-25 上海华力微电子有限公司 一种检测晶圆表面氮化硅残留的方法
CN116456806A (zh) * 2018-06-08 2023-07-18 联华电子股份有限公司 半导体元件
US11374170B2 (en) * 2018-09-25 2022-06-28 Applied Materials, Inc. Methods to form top contact to a magnetic tunnel junction
US11488863B2 (en) 2019-07-15 2022-11-01 International Business Machines Corporation Self-aligned contact scheme for pillar-based memory elements
US11195993B2 (en) * 2019-09-16 2021-12-07 International Business Machines Corporation Encapsulation topography-assisted self-aligned MRAM top contact

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CN1652249A (zh) * 2004-01-16 2005-08-10 三星电子株式会社 形成不含接触孔的纳米尺寸的磁性隧道结单元的方法

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KR19990065141A (ko) * 1998-01-08 1999-08-05 윤종용 자기 정렬된 콘택홀 형성방법
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CN1652249A (zh) * 2004-01-16 2005-08-10 三星电子株式会社 形成不含接触孔的纳米尺寸的磁性隧道结单元的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108369852A (zh) * 2016-04-13 2018-08-03 深圳线易科技有限责任公司 具有集成磁性器件的转接板

Also Published As

Publication number Publication date
CN101288150A (zh) 2008-10-15
KR20080045122A (ko) 2008-05-22
US8164128B2 (en) 2012-04-24
EP1917678A4 (en) 2012-08-22
TW200729412A (en) 2007-08-01
EP1917678A2 (en) 2008-05-07
EP1917678B1 (en) 2013-11-20
JP4939537B2 (ja) 2012-05-30
US20080043379A1 (en) 2008-02-21
JP2009506531A (ja) 2009-02-12
US20070048950A1 (en) 2007-03-01
WO2007024300A2 (en) 2007-03-01
WO2007024300A3 (en) 2008-06-05
US7399646B2 (en) 2008-07-15
KR101027226B1 (ko) 2011-04-06

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