CN101286508A - High-power LED encapsulation structure - Google Patents

High-power LED encapsulation structure Download PDF

Info

Publication number
CN101286508A
CN101286508A CN200810099758.XA CN200810099758A CN101286508A CN 101286508 A CN101286508 A CN 101286508A CN 200810099758 A CN200810099758 A CN 200810099758A CN 101286508 A CN101286508 A CN 101286508A
Authority
CN
China
Prior art keywords
positive
radiating block
led
encapsulation structure
led chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200810099758.XA
Other languages
Chinese (zh)
Other versions
CN100590869C (en
Inventor
徐泓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN KENA INDUSTRY CO., LTD.
Original Assignee
徐泓
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40058586&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN101286508(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 徐泓 filed Critical 徐泓
Priority to CN200810099758.XA priority Critical patent/CN100590869C/en
Publication of CN101286508A publication Critical patent/CN101286508A/en
Application granted granted Critical
Publication of CN100590869C publication Critical patent/CN100590869C/en
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

The invention provides a high-power LED packaging structure which has good radiation effect, strong luminous intensity, compact structure, simple technique and easy use, and comprises an insulator, an LED chip, conducting supports, a lead and a radiation block, wherein, the insulator partially covers the positive and the negative conducting supports to integrally form an annular substrate which is arranged on the front of the radiation block; a plurality of the LED chips are positioned in the annular holes of the substrate and arranged on the front of the radiation block; the anode and the cathode of the plurality of LED chips are connected with the positive and the negative conducting supports by the lead, wherein, a plurality of the LED chips with the same power are uniformly distributed in a plurality of lines and rows, the LED chips in the same line are serially connected into a group, a plurality of lines of the LED chips are parallelly arranged into the overall light source, and the anode and the cathode of each line of the LED chips are respectively connected to the positive and the negative conducting supports by the lead. The product of the invention is suitable for replacing traditional street lights.

Description

High-power LED encapsulation structure
Technical field
The present invention relates to semiconductor illuminating light source, especially a kind of high-power LED encapsulation structure.
Background technology
Traditional monomer high-power LED light source is to be formed by one or several Chip Packaging, in order to satisfy the demand of LED large area lighting to luminous intensity, adopt traditional monomer high-power LED encapsulation structure will make chip power do very greatly, as everyone knows, LED power is big more, and the heat of its generation is just big more, and the heat that produces during the work of single high-power chip is not easy to distribute, therefore cause gathering of self heat, make the working temperature of chip more and more higher, cause light decay even dead lamp.Reach needed brightness in order to utilize great power LED to make large area lighting, lighting is normal to adopt a plurality of great power LEDs to make up, the assembling when making light fixture of this mode is loaded down with trivial details, improved the production cost of LED lighting, and projected area and the bad control of the light uniformity, and in order to reach the required luminous projected area and the light uniformity, must the optical lens design quite complicated.
Summary of the invention:
The technical problem to be solved in the present invention provides that a kind of good heat dissipation effect, luminous intensity are big, compact conformation, simple, the easy to use high-power LED encapsulation structure of technology.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is, a kind of high-power LED encapsulation structure, comprise insulator, led chip, conducting bracket, lead, radiating block, it is annular matrix that described insulative body portion divides the positive and negative conducting bracket of parcel one-body molded, this matrix is installed on the radiating block front, and some led chips are positioned at the matrix looping pit and are installed on the radiating block front, and the positive and negative electrode of some led chips is connected with positive and negative conducting bracket by lead.
Wherein, the identical led chip of described some power is multiple lines and multiple rows and evenly distributes, with delegation's led chip series connection is one group, and it is integrated light source that the several rows led chip is arranged in parallel in parallel, and the positive and negative electrode of each row led chip is connected in positive and negative conducting bracket by lead respectively.
Wherein, be coated with thermal grease on described some led chips top layer.
Wherein, the several cylinders body is established at the back side of the insulator of described matrix, and described radiating block is established several through holes, and the through hole that the cylinder of described matrix inserts described radiating block links together.
Wherein, described some led chips bonding by high heat conduction silver slurry, be solidificated in the radiating block front.
Wherein, described radiating block adopts the silver-plated material of copper base.
Wherein, described positive and negative conducting bracket adopts the silver-plated material of copper base.
After the present invention adopts said structure, because radiating block and positive and negative conducting bracket all adopt the silver-plated material of copper base, led chip is bonding by high heat conduction silver slurry, be solidificated in the radiating block front, and the led chip top layer is coated with thermal grease, like this, the heat that led chip produces conducts to radiating block by high heat conduction silver slurry, by radiating block heat is conducted the space again, simultaneously, the area of radiating block and thermal capacity all are that accurate Calculation is determined, its radiating effect and led chip power are complementary, so the high good heat dissipation effect of radiating efficiency of the present invention.In addition, can be according to the led chip that uses the integrated varying number of needs, many specifications LED lamp that the production luminous intensity is different.Compare with the traditional lighting light fixture, compact conformation of the present invention, technology are simple, easy to use, when particularly utilizing the present invention to assemble light fixture, and the easier adjustment control of the uniformity of wherein optical lens design, lighting angle, projected area and light.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail
Fig. 1 is a cross-sectional view of the present invention;
Fig. 2 is vertical sectional structure schematic diagram of Fig. 1.
Embodiment
As shown in Figure 1 and Figure 2, high-power LED encapsulation structure of the present invention, comprise insulator 51, led chip 4, conducting bracket 52, lead 2, radiating block 6, it is characterized in that, described insulator 51 parts wrap up that positive and negative conducting bracket 52 is one-body molded to be annular matrix 50, this matrix 50 is installed on the front of radiating block 6, and some led chips 4 are positioned at matrix looping pit 53 and are installed on radiating block 6 fronts, and the positive and negative electrode of some led chips 4 is connected with positive and negative conducting bracket 52 by lead 2.So-called insulator 51 parts are wrapped up positive and negative conducting bracket 52 and are meant, the part of positive and negative conducting bracket 52 is come out, the expose portion of positive and negative conducting bracket 52, L shaped position is used to connect the positive and negative electrode of each row led chip among the figure, has the circular hole position to be used to connect external power supply among the figure.
As shown in Figure 1, the led chip 4 that described some power is identical is multiple lines and multiple rows and evenly distributes, with 4 series connection of delegation's led chip is one group, and it is integrated light source that several rows led chip 4 is arranged in parallel in parallel, and the positive and negative electrode of each row led chip 4 is connected in positive and negative conducting bracket 52 by lead 2 respectively.
As shown in Figure 1, be coated with thermal grease 3 on described some led chips top layer.
As shown in Figure 2, several cylinders body 54 is established at the back side of the insulator 51 of described matrix 50, and described radiating block 6 is established several through holes 61, and the through hole 61 that the cylinder 54 of described insulator inserts described radiating block links together.
As shown in Figure 2, described some led chips 47 bonding by high heat conduction silver slurry, solidify (in baking box, carrying out) in the radiating block front according to definite temperature.
Described radiating block adopts the silver-plated material of copper base.
Described positive and negative conducting bracket adopts the silver-plated material of copper base.
Integrated high power LED encapsulating structure in the embodiment of the invention shown in Figure 1 is one group with 10 series connection of delegation's led chip, and the positive and negative electrode of each row led chip 4 is connected in positive and negative conducting bracket (L shaped position) 52 by lead 2 respectively.It is integrated light source that 10 row led chips 4 are arranged in parallel in parallel, amounts to 100 led chips, is square pattern.The circular hole of radiating block 6 four corners positions is an installing hole, and two holes on the matrix 50 are used to introduce external power supply, is convenient to external power supply is welded on the positive and negative conducting bracket 52.

Claims (7)

1. high-power LED encapsulation structure, comprise insulator, led chip, conducting bracket, lead, radiating block, it is characterized in that, it is annular matrix that described insulative body portion divides the positive and negative conducting bracket of parcel one-body molded, this matrix is installed on the radiating block front, some led chips are positioned at the matrix looping pit and are installed on the radiating block front, and the positive and negative electrode of some led chips is connected with positive and negative conducting bracket by lead.
2. high-power LED encapsulation structure according to claim 1, it is characterized in that, the identical led chip of described some power is multiple lines and multiple rows and evenly distributes, with delegation's led chip series connection is one group, it is integrated light source that the several rows led chip is arranged in parallel in parallel, and the positive and negative electrode of each row led chip is connected in positive and negative conducting bracket by lead respectively.
3. high-power LED encapsulation structure according to claim 1 and 2 is characterized in that, is coated with thermal grease on described some led chips top layer.
4. high-power LED encapsulation structure according to claim 1 is characterized in that the several cylinders body is established at the back side of the insulator of described matrix, and described radiating block is established several through holes, and the through hole that the cylinder of described matrix inserts described radiating block links together.
5. high-power LED encapsulation structure according to claim 1 is characterized in that, described some led chips are bonding by high heat conduction silver slurry, be solidificated in the radiating block front.
6. high-power LED encapsulation structure according to claim 1 is characterized in that, described radiating block adopts the silver-plated material of copper base.
7. high-power LED encapsulation structure according to claim 1 is characterized in that, described positive and negative conducting bracket adopts the silver-plated material of copper base.
CN200810099758.XA 2008-06-04 2008-06-04 High-power LED encapsulation structure Ceased CN100590869C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200810099758.XA CN100590869C (en) 2008-06-04 2008-06-04 High-power LED encapsulation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200810099758.XA CN100590869C (en) 2008-06-04 2008-06-04 High-power LED encapsulation structure

Publications (2)

Publication Number Publication Date
CN101286508A true CN101286508A (en) 2008-10-15
CN100590869C CN100590869C (en) 2010-02-17

Family

ID=40058586

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810099758.XA Ceased CN100590869C (en) 2008-06-04 2008-06-04 High-power LED encapsulation structure

Country Status (1)

Country Link
CN (1) CN100590869C (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102032483A (en) * 2010-09-27 2011-04-27 陈炜旻 Light-emitting diode (LED) plane light source
CN101737662B (en) * 2010-01-18 2011-05-04 赵翼 Method for manufacturing integrated packaged high-power LED illuminating light source, and LED illuminating lamp
CN102185084A (en) * 2011-04-26 2011-09-14 深圳市天电光电科技有限公司 LED (Light-Emitting Diode) packaging bracket as well as uniset and LED packaging structure thereof
CN102338294A (en) * 2010-07-21 2012-02-01 江苏苏能光电科技有限责任公司 Integrated LED (Light-emitting Diode) light source suitable for alternating current direct driving
CN102374406A (en) * 2010-08-26 2012-03-14 杭州创元光电科技有限公司 Light-emitting diode (LED) chip light source module made from display chip
CN102691912A (en) * 2012-05-29 2012-09-26 山水照明科技(常熟)有限公司 Led lamp
CN103307572A (en) * 2012-03-07 2013-09-18 欧司朗股份有限公司 Module, manufacturing method of module and lighting device equipped with module

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101737662B (en) * 2010-01-18 2011-05-04 赵翼 Method for manufacturing integrated packaged high-power LED illuminating light source, and LED illuminating lamp
CN102338294A (en) * 2010-07-21 2012-02-01 江苏苏能光电科技有限责任公司 Integrated LED (Light-emitting Diode) light source suitable for alternating current direct driving
CN102374406A (en) * 2010-08-26 2012-03-14 杭州创元光电科技有限公司 Light-emitting diode (LED) chip light source module made from display chip
CN102032483A (en) * 2010-09-27 2011-04-27 陈炜旻 Light-emitting diode (LED) plane light source
CN102032483B (en) * 2010-09-27 2013-06-26 陈炜旻 Light-emitting diode (LED) plane light source
CN102185084A (en) * 2011-04-26 2011-09-14 深圳市天电光电科技有限公司 LED (Light-Emitting Diode) packaging bracket as well as uniset and LED packaging structure thereof
CN103307572A (en) * 2012-03-07 2013-09-18 欧司朗股份有限公司 Module, manufacturing method of module and lighting device equipped with module
CN102691912A (en) * 2012-05-29 2012-09-26 山水照明科技(常熟)有限公司 Led lamp

Also Published As

Publication number Publication date
CN100590869C (en) 2010-02-17

Similar Documents

Publication Publication Date Title
CN100590869C (en) High-power LED encapsulation structure
CN201363572Y (en) LED light source module
CN202521292U (en) Improved structure of LED bulb
CN201909192U (en) Improved LED (light-emitting diode) module
CN102130110A (en) Multi-chipset high-power LED encapsulation structure
CN202013883U (en) High-power LED (Light Emitting Diode) module sealing structure
CN201359209Y (en) Flat-plate type lens integrated LED light source
CN201149869Y (en) LED encapsulation structure
CN201204205Y (en) High-power LED encapsulation structure
CN101789422B (en) Light-emitting diode (LED) module
CN101650007A (en) Power alternating current LED light source
CN201096332Y (en) LED lighting lamp directly switching 220v alternating-current electric network
CN103470968A (en) Light emitting diode lamp core with large light emitting angle and illumination device with lamp core
CN210866193U (en) COB substrate
CN201753850U (en) LED illumination module and special mold
CN202003993U (en) Large power LED packaging structure
CN201443693U (en) LED light source module
CN101451689A (en) Plate type LED light source chip
CN205956787U (en) Thermoelectric separation type LED dot matrix light source
CN205979221U (en) Light source subassembly and have LED multiaspect lamp of this light source subassembly
CN202111088U (en) Packaging structure of high power LED chip
CN201994294U (en) Chip on board packaging structure and LED lamp bead
CN202549839U (en) Novel LED (Light-Emitting Diode) light-emitting chip and LED lamp formed by assembling same
CN102569284B (en) The LED that New LED luminescence chip and assembling thereof are formed
CN201909274U (en) RGB (red, green and blue) three-colored LED (light-emitting diode) point light source

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SHENZHEN KENA INDUSTRIAL CO., LTD.

Free format text: FORMER OWNER: XU HONG

Effective date: 20090605

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20090605

Address after: Baoan District Gongming Town, Shenzhen City, Guangdong Province, heshuikou Village tenth Lang Industrial Zone Post encoding: 518106

Applicant after: SHENZHEN KENA INDUSTRY CO., LTD.

Address before: Long Jinhua Garden Court A block 1102 in Guangdong city of Shenzhen province Nanshan District post encoding Jin: 518000

Applicant before: Xu Hong

C14 Grant of patent or utility model
GR01 Patent grant
C35 Partial or whole invalidation of patent or utility model
IW01 Full invalidation of patent right

Decision date of declaring invalidation: 20111019

Decision number of declaring invalidation: 17396

Granted publication date: 20100217

C35 Partial or whole invalidation of patent or utility model
IW01 Full invalidation of patent right

Decision date of declaring invalidation: 20111019

Decision number of declaring invalidation: 17396

Granted publication date: 20100217