CN101266960B - 使用锌的软焊接结构及方法 - Google Patents

使用锌的软焊接结构及方法 Download PDF

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Publication number
CN101266960B
CN101266960B CN2008100837843A CN200810083784A CN101266960B CN 101266960 B CN101266960 B CN 101266960B CN 2008100837843 A CN2008100837843 A CN 2008100837843A CN 200810083784 A CN200810083784 A CN 200810083784A CN 101266960 B CN101266960 B CN 101266960B
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lead
free solder
pad
layer
alloy
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CN101266960A (zh
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崔源璟
文彰烈
孙崙喆
金映镐
卢熙摞
吴昌烈
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]

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Abstract

本发明提供一种使用Zn的软焊接结构，包括：含有Zn的结合层；以及结合到该结合层并对其起反应的无铅焊料。该结合层可以是Zn合金层或含有Zn层的多层。因此，通过加入高反应性Zn至软焊接的界面反应而可提高软焊接结构的特性。

Description

使用锌的软焊接结构及方法
技术领域
本发明涉及软焊接，更特别地，涉及包括Zn层的软焊接结构和软焊接方法。
背景技术
软焊接(soldering)，是电子元件接合(electronic joint)所需的接合方法之一，通过在450℃以下的温度熔化第三材料来将两个部件接合在一起。第三材料称为焊料。传统上，包括铅(Pb)的焊料已被长期使用。然而，由于意识到铅是有毒的，且其使用已被管制，所以使用无铅焊料的软焊接方法吸引了大量注意。在使用无铅焊料的常规软焊接方法中，Cu结合层用在基板和无铅焊料之间。
作为无铅焊料，使用Sn作为主要成分的焊料正在增多。包括Sn焊料的焊接结构的示例示于图1中。
图1的传统无铅软焊接结构包括基板10、结合层或结合垫20、及焊料30。结合层20使用Cu层。焊料30可由SnAgCu制成。
图1所示的软焊接结构显示了结合界面的弱结合强度和脆性，导致产品可靠性的降低。即，当包括Sn的焊料30结合到结合层20时，Ag3Sn小片(platelet)和Cu3Sn相产生于焊料30和结合层20的界面处。因此，该软焊接结构容易破裂。
在传统软焊接工序中进行回流工序之后，Sn基焊料在冷却工艺期间经历过冷却(undercooling)。Sn焊料的过冷却造成Ag3Sn颗粒的形成和分离，其流入过冷却的熔融Sn。于是，不规则地构成了无铅焊料。Ag3Sn颗粒在熔融Sn内迅速生长并形成Ag3Sn小片。
在上述软焊接结构中，如果后来出现了裂纹，该裂纹会沿其上形成Ag3Sn小片的界面迅速蔓延。使用上述传统软焊接结构将芯片结合至基板而制造的电子器件将由于裂纹而是有缺陷的，该裂纹可在器件受到冲击或应力集中于焊接接合处时形成。由于在传统软焊接结构中裂纹迅速蔓延，所以焊接接合处的可靠性变差。
同时，在传统的软焊接结构中，会形成较厚的金属间化合物(inter-metallic compound，IMC)层，且因此导致空缺(void)的形成。
图2是在传统软焊接结构中生成的IMC和空缺的概念图。如图2所示，当焊料300在结合层20上回流时，在结合层20和焊料300之间的界面区域产生Cu6Sn5相。然后，随着老化过程的进行，在Cu6Sn5和Cu之间的界面产生Cu3Sn相。
金属之间的界面中产生的化合物例如Cu3Sn相和Cu6Sn5相通常被称为IMC。
由于传统软焊接结构的厚IMC在内部界面中产生空缺(void)或孔(pore)，所以软焊接强度变差。具体的，由于Cu3Sn相产生时发生固相扩散，所以空缺或孔会产生在界面中。结果，软焊接结构会容易地被破坏。
因此，传统软焊接结构和方法在使用无铅焊料时存在困难。
发明内容
本发明的示范性实施例克服了上述缺点以及上面未描述的其他缺点。另外，本发明不是必须克服上述缺点，本发明的示范性实施例可以不克服任何上述问题。
本发明提供一种软焊接结构和方法，用于通过包括高度反应性的(reactive)Zn而增强软焊接特性和可靠性。
根据本发明的一个方面，提供一种软焊接结构，包括含有Zn的结合层(bonding layer)、以及结合到该结合层并对其起反应的无铅焊料。
该结合层可以是Zn合金层。
该Zn合金层可以是由Zn以及选自Cu、Ag、Au、Pd、Ni、Cr和Ti构成的组的至少一种形成的合金。
该结合层可包含基于该结合层的总重量在0.1～30％的量的Zn。
该Zn合金层的厚度可在0.5～10μm的范围。
该结合层可以是包括Zn层的多层。
当该结合层是包括Zn层的多层时，该Zn层可位于该多层的朝向无铅焊料的顶部，且该Zn层的厚度可为1μm或更小。
该软焊接结构还可包括支承该结合层的基板。
该软焊接结构还可包括使该基板与无铅焊料绝缘的绝缘层。
该无铅焊料可以是SnAg、SnAgCu、SnCu、SnBi、SnIn、SnZn、SnZnBi和SnZnIn之一。
根据本发明的以上方面，一种软焊接方法包括形成含Zn的结合层于基板上，且形成无铅焊料于该结合层上。
该结合层可通过沉积Zn合金层于该基板上而形成。
该Zn合金层可使用溅射法、蒸镀法、电镀法和无电镀法之一沉积于该基板上。
该Zn合金层可以是由Zn以及选自Cu、Ag、Au、Pd、Ni、Cr和Ti构成的组的至少一种形成的合金。
该结合层可包含基于该Zn合金层的总重量在0.1～30％的量的Zn。
该结合层可包含0.5～10μm厚度的Zn合金层。
该结合层可通过形成至少一材料层到该基板上且形成Zn层到该材料层上而是多层的，该材料层由某种材料形成，该Zn层由Zn形成。在该情况下，该Zn层可具有1μm或更小的厚度。
该无铅焊料的形成可使用SnAg、SnAgCu、SnCu、SnBi、SnIn、SnZn、SnZnBi和SnZnIn之一作为无铅焊料。
该结合层的形成可包括：应用并构图绝缘层于该基板上；以及形成结合层于该绝缘层上和该基板上。该结合层可使用溅射法、蒸镀法、电镀法、以及无电镀法之一形成。
该无铅焊料的形成可包括：应用光致抗蚀剂于该结合层的除了用于软焊接结构的位置以外的区域上；形成无铅焊料于所述用于软焊接结构的位置处；以及除去该光致抗蚀剂和该绝缘层，进行回流工艺，且将无铅焊料结合至该结合层。
该无铅焊料的形成可包括：应用光致抗蚀剂于该结合层的除了用于软焊接结构的位置以外的区域上；应用无铅焊料于所述用于软焊接结构的位置处；以及除去该光致抗蚀剂，进行回流工艺，且将无铅焊料结合至该结合层。
附图说明
通过参照附图描述本发明的示范性实施例，本发明的以上和/或其他方面将更明显，附图中：
图1是传统软焊接结构的概念图；
图2是传统软焊接结构的概念图，示出其缺点；
图3是根据本发明一示范性实施例的软焊接结构的概念图；
图4是根据本发明另一示范性实施例的软焊接结构的概念图；
图5是根据本发明又一示范性实施例的软焊接结构的概念图；
图6A至图6E是制造图5的软焊接结构的方法的概念图；
图7A至图7D是制造图3和图4的软焊接结构的方法的概念图；
图8A、8B、9A、9B、10A、10B、11A和11B电子显微镜取得的照片，用于比较常规软焊接结构与本发明的软焊接结构的特性；以及
图12是显示基于老化时间的IMC厚度变化的曲线图，用于比较常规软焊接结构与本发明的软焊接结构的特性。
具体实施方式
现在将参照附图更详细地说明本发明的某些示范性实施例。
在下面的描述中，即使在不同的附图上，相同的附图标记用于表示相同的元件。在以下描述中定义的对象，例如详细构造和元件说明，是作为示例提供以有助于对本发明的充分理解。另外，熟知的功能或构造不作详细描述，以免不必要的细节使本发明变得晦涩。
图3是根据本发明一示范性实施例的软焊接结构的概念图。图3的软焊接结构包括基板100、结合层110、及无铅焊料120。
结合层110可用作凸块下冶金(under bump metallurgy，UBM)或表面抛光金属(surface finish metallization)以将芯片(未显示)结合到基板100上。根据本发明的示范性实施例，结合层100可包括Zn或Zn合金层。
具体地，Zn合金层可由包括选自Cu、Ag、Au、Pd、Ni、Cr和Ti构成的组的至少一种以及Zn的合金制成。即，Zn合金层可以是诸如CuZn、AgZn、ZnCuNi和ZnCuAg的合金。Zn的比率可根据润湿性(wetting)、要焊接的芯片类型、以及使用环境来确定。在一实施例中，Zn的比率可以基于Zn合金层的总重量在0.1-30％的范围。
Zn合金层的厚度可由设计者确定。大致地，厚度可在0.5-10μm的范围。
结合层110形成于芯片(未显示)将结合到基板100的位置。形成于结合层110上的无铅焊料120熔化并与结合层110结合以因此形成软焊接结构。
无铅焊料120指的是不含铅的焊料。即，无铅焊料120可以是SnAg、SnAgCu、SnCu、SnBi、SnIn、SnZn、SnZnBi和SnZnIn。除了这些特定材料之外，传统无铅焊料可被使用。
当Zn合金层用作结合层110时，由于无铅焊料120回流并冷却在结合层110上，所以Zn可以抑制界面中Ag3Sn小片的生长和Cu3Sn相的形成。
即，Zn减缓了无铅焊料120内熔融Sn的过冷却。因此，Ag3Sn小片的生长也减缓。另外，由于含有Zn减缓了Cu6Sn5相的生长，所以Cu3Sn相的形成被抑制和/或延迟。结果，空缺或孔的形成也能被限制。
这样，由结合层110和无铅焊料120构成的软焊接结构可用于将芯片(未显示)结合到基板100上。此外，软焊接结构可用于倒装芯片封装、球栅阵列封装、晶片键合、刮软(staking)等。
图4是根据本发明另一示范性实施例的软焊接结构的概念图。图4的软焊接结构具有与图3的软焊接结构基本类似的结构。区别在于结合层130是多层。结合层130可通过依次沉积材料层131和Zn层132而是多层的。材料层131的数量可以是一或更多。当形成两个或更多材料层131时，各层131的每个可由相同或不同材料形成。例如，材料层131可以使用传统软焊接结构的Cu层或其他材料实施。
Zn层132优选地沉积在结合层130的最高层。因此，当无铅焊料120形成于结合层130上时，Zn层132与无铅焊料120直接反应且因此改变界面中的反应机制。更详细地，在回流工艺期间当无铅焊料120的Sn朝向结合层130蔓延且材料层131和Zn层132的Cu和Zn朝向无铅焊料120蔓延时，偶联反应(coupling reaction)形成熔融的Cu6Sn5相。在该过程中，含有Zn阻止了Ag3Sn小片的生长和Cu3Sn相的形成。优选形成约1μm或更小厚度的Zn层132。图4中除了结合层130之外的其他结构与图3的结构基本类似，因此省略进一步的描述。
图5是根据本发明又一示范性实施例的软焊接结构的概念图。图5的软焊接结构包括基板200、绝缘层210、结合层220、及无铅焊料230。
结合层220可使用图3所示的Zn合金层或者使用图4所示例的包括Zn层的多层形成。如图5所示，部分结合层220可形成于绝缘层210的表面，其他部分可直接形成于基板200上。
基板200用于支持包括结合层220和无铅焊料230的软焊接结构以及通过该软焊接结构安装到基板200上的芯片(未示出)。
绝缘层210用来使无铅焊料230与基板200绝缘。因此，可以避免通过软焊接结构接合的芯片与基板200之间的信号泄露。
图5中除了绝缘层210和结合层220之外的部件具有与图3和图4的部件基本相似的结构，因此将省略进一步的说明。
图6A至6E是使用图5的软焊接结构的软焊接方法的概念图。
首先参照图6A，用于软焊接结构的位置通过沉积和构图绝缘层210于基板200上而被暴露。绝缘层210可由绝缘材料诸如SiO2或Al2O3形成。
如图6B所示，含Zn的结合层220沉积在绝缘层210和基板200整个之上。结合层220可由Zn合金层形成。供选地，结合层220可以通过在绝缘层210和基板200整个之上依次沉积多个层且最后沉积Zn层而是多层的。
结合层220可使用溅射法、蒸镀法、电镀法和无电镀法沉积。此外，相关技术中已知的沉积技术可被使用。
溅射法可分为DC、RF(射频)、DC磁控管法、以及RF磁控管溅射法。对于DC溅射法，单独制造将用于结合层220的Zn合金靶。为了制作Zn合金靶，通过将Zn和其他金属性材料以期望的比率放入充有氩气的真空炉中并将其弧熔(arc-melting)来制造合金样品。接着，通过以预设尺寸切割所制造的合金样品而获得Zn合金靶。
当准备了Zn合金靶时，具有绝缘层210的基板200和Zn合金靶一起放入溅射腔中且然后进行溅射。不活泼气体例如氩被放入溅射腔中，且氩利用DC、RF、DC磁控管、或RF磁控管被离子化。生成的氩离子由于势差加速并撞击靶，使中性靶原子被发射。发射的靶原子沉积到具有绝缘层210的基板200上且因此形成结合层220。DC溅射法的原理可用于形成包括Zn层的多层结合层。
既然溅射法在本领域中已为人熟知，所以不再详细描述其他溅射法。
蒸镀法可分为使用电阻加热的热蒸镀法，及使用电子束的电子束蒸镀法。关于其的详细描述将被省略。
尽管图6B中未特别示出，但是在沉积结合层220之后，通过沉积光致抗蚀剂(未示出)在结合层220上且以特定形状构图结合层220，结合层220可仅位于将被焊接的位置。当完成了结合层220的构图时，光致抗蚀剂(未示出)被去除且继续后面的工艺。
如图6C和6D所示，在除去部分结合层220和形成光致抗蚀剂240之后，沉积无铅焊料230。无铅焊料230可使用电镀法、无电镀法、真空蒸镀法、焊球转移法(solder ball transfer method)、柱焊法(stud bumping method)、焊料喷射法(solder jet method)等沉积在结合层220上。
接着，如图6E所示，在除去光致抗蚀剂240后，通过利用回流工艺融化并老化无铅焊料230来制成软焊接结构。在回流工艺之后，无铅焊料230在老化工艺(aging process)中根据表面张力而可以是球形的，如图6E所示。因此，当制造了软焊接结构时，通过使芯片(未显示)紧密接触和结合到基板200而能实现软焊接。
图7A至7D是使用图3和4的软焊接结构的软焊接方法的概念图。
在图7A中，含Zn结合层110或130以特定形状沉积在基板100上。结合层可以使用Zn合金层110或含Zn多层130形成。在多层130的情况下，至少一材料层131首先被沉积，然后Zn层132被沉积。
接着，如图7B和7C所示，在沉积光致抗蚀剂160之后，无铅焊料120被沉积。
如图7D所示，在除去光致抗蚀剂160之后，通过回流制作图3或4的软焊接结构。然后，通过使芯片(未显示)紧密接触软焊接结构，软焊接能将芯片结合到基板100上。
图7B、7C和7D的详细说明基本类似于图6C、6D和6E的说明，因此将被省略。
注意，图6A至6E和图7A至7D的工艺顺序和方法可基于本领域已知的技术而改变。
现在，通过参照图8A至11B特别示出软焊接结构的特性。
图8A是对于使用Cu层作为结合层的传统软焊接结构在完成回流工艺之后通过电子显微镜取得的照片。在图8A中，在箭头所指的点观察到相当大的Ag3Sn小片结构。
作为对照，图8B是对于根据本发明一示范性实施例的使用Cu7Zn构成的Zn合金层作为结合层的软焊接结构在完成回流工艺之后通过电子显微镜取得的照片。Cu7Zn表示在Zn合金层的总重量中Cu占93％，Zn占7％。如图8B所示，与图8A相比，Ag3Sn小片的生长受到限制，因此形成了相对较小的Ag3Sn小片。
图9A和9B是图8A的传统软焊接结构和图8B的本发明的软焊接结构在150℃老化约50小时后通过电子显微镜取得的照片。
如图9A所示，Ag3Sn小片的尺寸和数量增大，特别地，形成了约3.91μm的IMC层。如前所述，IMC是在结合层和焊料之间的界面中形成的化合物。图9A中的IMC是Cu3Sn和Cu6Sn5相。
在图9B中，Ag3Sn小片的尺寸有小的改变，且形成约3.21μm的IMC层。如前所述，由于在根据本发明的实施例的软焊接结构中Cu3Sn相的生长被限制，所以IMC的厚度小于传统软焊接结构。
图10A和10B是使用Cu层作为结合层的传统软焊接结构和使用Cu10Zn作为结合层的本发明的软焊接结构在150℃老化约500小时后界面状态的照片，该照片通过电子显微镜取得。
从图10A可以看出，Cu3Sn相和Cu6Sn5相顺序位于Cu层上。在回流工艺中形成Cu6Sn5相之后，在老化过程中Cu3Sn相形成于Cu6Sn5相与Cu层之间的界面中。结果，如图10A所示地产生了3层结构。
参照图10B，Cu6Sn5相形成于Cu10Zn结合层上。即，通过使用Zn合金层作为结合层，Cu3Sn相很难形成。于是，如图11B所示空缺几乎不形成。
图11A和11B是图10A和10B的软焊接结构进一步老化约500小时后界面状态的电子显微镜照片。换句话说，图11A和11B显示了回流工艺后在150℃老化总共约1000小时后的状态。
在图11A中，Cu3Sn层的厚度大大增大。推测Cu3Sn相形成时发生了固态扩散。由于Cu层中的Cu原子移动到无铅焊料，产生了空缺。图11中Cu层表面中的黑斑是空缺。对照地，在图11B中，没有观察到Cu3Sn层和空缺。
如图8A至11B所示，相比于使用Cu层作为结合层的传统软焊接结构，本发明的软焊接结构的可靠性得到大大提高。
图12是显示常规软焊接结构与本发明的软焊接结构的相对于老化时间的IMC厚度变化的曲线图。特别地，图12的IMC厚度通过在260℃回流30秒且然后在150℃老化而测量的。
在图12中，当使用SnAgCu无铅焊料和Cu结合层制作的软焊接结构(■)老化500小时时，形成厚约6.31μm的IMC。当老化约1000小时后，形成厚约7.97μm的IMC。
对照地，当使用SnAgCu无铅焊料和Cu10Zn结合层制作的软焊接结构(●)老化500小时时，形成厚约3.51μm的IMC。老化约1000小时后，形成厚约4.57μm的IMC。
在两张图中，与传统软焊接结构相比，根据本发明一实施例的软焊接结构显示出显著更慢的IMC生长速度。因此，瑕疵诸如空缺的形成能被限制。结果，能防止脆性特征。
如上所述，通过使用无铅焊料且采用Zn结合层(或结合垫)，Ag3Sn小片的生长能被限制且IMC的生长能被减慢。因此，裂纹的快速蔓延能得以避免且瑕疵诸如空缺或孔的形成能被最小化。因此，能够实现焊接接合点高度可靠的牢固软焊接结构。
尽管已经显示和描述了基本发明概念的一些实施例，但是本领域技术人员将意识到，可以在这些实施例中进行改变而不偏离该基本发明概念的原理和思想，该基本发明概念的范围由所附权利要求及其等价物定义。

Claims (14)

1.一种软焊接结构，包括：
基板；
形成在该基板上的结合垫，该结合垫是Zn合金层；以及
该结合垫上的含有Sn的无铅焊料，
其中该结合垫结合到该无铅焊料，且在该结合垫上形成该无铅焊料期间Zn在与该无铅焊料的结合表面处与该无铅焊料的材料反应，以及
该Zn合金层是由Zn和选自Cu、Ag、Au、Pd、Ni、Cr和Ti构成的组的至少一种形成的合金。
2.如权利要求1所述的软焊接结构，其中该结合垫包含基于Zn合金层的总重量在0.1～30％的量的Zn。
3.如权利要求1所述的软焊接结构，其中该Zn合金层的厚度在0.5～10μm的范围。
4.如权利要求1所述的软焊接结构，还包括：使该基板与该无铅焊料绝缘的绝缘层。
5.如权利要求1-4中的任一项所述的软焊接结构，其中该无铅焊料是SnAg、SnAgCu、SnCu、SnBi、SnIn、SnZn、SnZnBi和SnZnIn之一。
6.一种软焊接方法，包括：
形成结合垫于基板上，该结合垫是Zn合金层；以及
形成无铅焊料于该结合垫上，该无铅焊料含有Sn，
其中在该结合垫上形成该无铅焊料期间，在与该无铅焊料的结合表面处所述Zn与所述无铅焊料的材料反应，以及
其中该Zn合金层是由Zn和选自Cu、Ag、Au、Pd、Ni、Cr和Ti构成的组的至少一种形成的合金。
7.如权利要求6所述的软焊接方法，其中该结合垫通过沉积该Zn合金层于该基板上而形成。
8.如权利要求7所述的软焊接方法，其中该Zn合金层使用溅射法、蒸镀法、电镀法和无电镀法之一形成于该基板上。
9.如权利要求7所述的软焊接方法，其中该结合垫包含基于Zn合金层的总重量在0.1～30％的量的Zn。
10.如权利要求7所述的软焊接方法，其中该Zn合金层具有0.5～10μm的厚度。
11.如权利要求6所述的软焊接方法，其中该无铅焊料的形成使用SnAg、SnAgCu、SnCu、SnBi、SnIn、SnZn、SnZnBi和SnZnIn之一作为该无铅焊料。
12.如权利要求6所述的软焊接方法，其中该结合垫的形成包括：
应用并构图绝缘层于该基板上；以及
形成该结合垫于该绝缘层上且在该基板上。
13.如权利要求12所述的软焊接方法，其中该无铅焊料的形成包括：
应用光致抗蚀剂于该结合垫的除了用于软焊接结构的位置以外的区域上；
形成所述无铅焊料于所述用于软焊接结构的位置处；以及
除去该光致抗蚀剂，进行回流工艺，且将所述无铅焊料结合至该结合垫。
14.如权利要求6所述的软焊接方法，其中该无铅焊料的形成包括：
应用光致抗蚀剂于该结合垫的除了用于软焊接结构的位置以外的区域上；
应用所述无铅焊料于所述用于软焊接结构的位置处；以及
除去该光致抗蚀剂，进行回流工艺，且将所述无铅焊料结合至该结合垫。
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