CN101258601B - 具有可耗尽的集电极列的双极方法和结构 - Google Patents

具有可耗尽的集电极列的双极方法和结构 Download PDF

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Publication number
CN101258601B
CN101258601B CN2006800322314A CN200680032231A CN101258601B CN 101258601 B CN101258601 B CN 101258601B CN 2006800322314 A CN2006800322314 A CN 2006800322314A CN 200680032231 A CN200680032231 A CN 200680032231A CN 101258601 B CN101258601 B CN 101258601B
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CN
China
Prior art keywords
bipolar transistor
emitter
integrated circuit
conductivity type
doped
Prior art date
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Expired - Fee Related
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CN2006800322314A
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English (en)
Chinese (zh)
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CN101258601A (zh
Inventor
J·D·比森
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Intersil Corp
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Intersil Inc
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Publication date
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Publication of CN101258601A publication Critical patent/CN101258601A/zh
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Publication of CN101258601B publication Critical patent/CN101258601B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions

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  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CN2006800322314A 2005-09-02 2006-09-01 具有可耗尽的集电极列的双极方法和结构 Expired - Fee Related CN101258601B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/217,304 2005-09-02
US11/217,304 US7285469B2 (en) 2005-09-02 2005-09-02 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns
PCT/US2006/034224 WO2007028016A2 (en) 2005-09-02 2006-09-01 Bipolar method and structure with depletable collector colums

Publications (2)

Publication Number Publication Date
CN101258601A CN101258601A (zh) 2008-09-03
CN101258601B true CN101258601B (zh) 2010-12-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800322314A Expired - Fee Related CN101258601B (zh) 2005-09-02 2006-09-01 具有可耗尽的集电极列的双极方法和结构

Country Status (7)

Country Link
US (4) US7285469B2 (https=)
EP (1) EP1922758B1 (https=)
JP (1) JP2009507378A (https=)
KR (1) KR100956241B1 (https=)
CN (1) CN101258601B (https=)
TW (1) TWI356492B (https=)
WO (1) WO2007028016A2 (https=)

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US7482672B2 (en) * 2006-06-30 2009-01-27 International Business Machines Corporation Semiconductor device structures for bipolar junction transistors
KR100812079B1 (ko) * 2006-08-22 2008-03-07 동부일렉트로닉스 주식회사 수직형 바이폴라 접합 트랜지스터 및 그 제조 방법, 이를갖는 씨모스 이미지 센서 및 그 제조 방법
JP5217257B2 (ja) * 2007-06-06 2013-06-19 株式会社デンソー 半導体装置およびその製造方法
US7847373B2 (en) * 2008-12-22 2010-12-07 Agostino Pirovano Fabricating bipolar junction select transistors for semiconductor memories
WO2010118215A1 (en) * 2009-04-09 2010-10-14 Georgia Tech Research Corporation Superjunction collectors for transistors & semiconductor devices
US12426286B2 (en) * 2016-06-25 2025-09-23 Texas Instruments Incorporated Radiation enhanced bipolar transistor
CN110010693B (zh) * 2019-05-07 2024-03-12 无锡紫光微电子有限公司 一种高压深沟槽型超结mosfet的结构及其制作方法
US11955513B2 (en) * 2019-11-08 2024-04-09 Nisshinbo Micro Devices Inc. Semiconductor device
CN118825062B (zh) * 2024-09-13 2024-12-27 芯联先锋集成电路制造(绍兴)有限公司 半导体器件、双极型晶体管及其制备方法

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DE3131611A1 (de) * 1981-08-10 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Epitaxialer transistor
US4532003A (en) 1982-08-09 1985-07-30 Harris Corporation Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance
US4729008A (en) 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
US5344785A (en) * 1992-03-13 1994-09-06 United Technologies Corporation Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate
US5428233A (en) * 1994-04-04 1995-06-27 Motorola Inc. Voltage controlled resistive device
US5633180A (en) 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
US6423990B1 (en) * 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
JP4447065B2 (ja) * 1999-01-11 2010-04-07 富士電機システムズ株式会社 超接合半導体素子の製造方法
US6475864B1 (en) 1999-10-21 2002-11-05 Fuji Electric Co., Ltd. Method of manufacturing a super-junction semiconductor device with an conductivity type layer
AU2001255693A1 (en) 2000-04-27 2001-11-12 En Jun Zhu Improved structure for a semiconductor device
JP4534303B2 (ja) 2000-04-27 2010-09-01 富士電機システムズ株式会社 横型超接合半導体素子
DE10106073C2 (de) 2001-02-09 2003-01-30 Infineon Technologies Ag SOI-Bauelement
US6822292B2 (en) * 2001-11-21 2004-11-23 Intersil Americas Inc. Lateral MOSFET structure of an integrated circuit having separated device regions
JP4166627B2 (ja) * 2003-05-30 2008-10-15 株式会社デンソー 半導体装置
CN1823421B (zh) * 2003-08-20 2010-04-28 株式会社电装 垂直型半导体装置
US6740563B1 (en) * 2003-10-02 2004-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Amorphizing ion implant method for forming polysilicon emitter bipolar transistor
JP4904673B2 (ja) * 2004-02-09 2012-03-28 富士電機株式会社 半導体装置および半導体装置の製造方法

Non-Patent Citations (2)

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Title
US 2002/0000640 A1,说明书0010－0020段及附图2－3.
US 2003/0008483 A1,全文.

Also Published As

Publication number Publication date
US7285469B2 (en) 2007-10-23
WO2007028016A3 (en) 2007-05-24
US7473983B2 (en) 2009-01-06
TW200721482A (en) 2007-06-01
USRE43042E1 (en) 2011-12-27
TWI356492B (en) 2012-01-11
KR20080037690A (ko) 2008-04-30
EP1922758B1 (en) 2019-12-04
JP2009507378A (ja) 2009-02-19
EP1922758A2 (en) 2008-05-21
USRE44140E1 (en) 2013-04-09
CN101258601A (zh) 2008-09-03
US20070052066A1 (en) 2007-03-08
US20070273006A1 (en) 2007-11-29
WO2007028016A2 (en) 2007-03-08
KR100956241B1 (ko) 2010-05-06

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Granted publication date: 20101215