CN101257044A - 使用选择性介质淀积的双极晶体管及其制造方法 - Google Patents
使用选择性介质淀积的双极晶体管及其制造方法 Download PDFInfo
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- CN101257044A CN101257044A CNA2008100812070A CN200810081207A CN101257044A CN 101257044 A CN101257044 A CN 101257044A CN A2008100812070 A CNA2008100812070 A CN A2008100812070A CN 200810081207 A CN200810081207 A CN 200810081207A CN 101257044 A CN101257044 A CN 101257044A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/679,971 US20080203536A1 (en) | 2007-02-28 | 2007-02-28 | Bipolar transistor using selective dielectric deposition and methods for fabrication thereof |
US11/679,971 | 2007-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101257044A true CN101257044A (zh) | 2008-09-03 |
CN101257044B CN101257044B (zh) | 2010-11-10 |
Family
ID=39714934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100812070A Expired - Fee Related CN101257044B (zh) | 2007-02-28 | 2008-02-19 | 使用选择性介质淀积的双极晶体管及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080203536A1 (zh) |
CN (1) | CN101257044B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946194A (zh) * | 2017-12-21 | 2018-04-20 | 深圳市晶特智造科技有限公司 | 双极晶体管的制作方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8212292B2 (en) * | 2009-11-20 | 2012-07-03 | Freescale Semiconductor, Inc. | High gain tunable bipolar transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5234844A (en) * | 1988-03-10 | 1993-08-10 | Oki Electric Industry Co., Inc. | Process for forming bipolar transistor structure |
US6867440B1 (en) * | 2002-08-13 | 2005-03-15 | Newport Fab, Llc | Self-aligned bipolar transistor without spacers and method for fabricating same |
US6995065B2 (en) * | 2003-12-10 | 2006-02-07 | International Business Machines Corporation | Selective post-doping of gate structures by means of selective oxide growth |
-
2007
- 2007-02-28 US US11/679,971 patent/US20080203536A1/en not_active Abandoned
-
2008
- 2008-02-19 CN CN2008100812070A patent/CN101257044B/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946194A (zh) * | 2017-12-21 | 2018-04-20 | 深圳市晶特智造科技有限公司 | 双极晶体管的制作方法 |
CN107946194B (zh) * | 2017-12-21 | 2020-08-28 | 南京溧水高新创业投资管理有限公司 | 双极晶体管的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080203536A1 (en) | 2008-08-28 |
CN101257044B (zh) | 2010-11-10 |
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Effective date of registration: 20171110 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171110 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101110 Termination date: 20190219 |
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