CN101226962B - Hvmos及集成hvmos与cmos的半导体器件 - Google Patents
Hvmos及集成hvmos与cmos的半导体器件 Download PDFInfo
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- CN101226962B CN101226962B CN 200810080588 CN200810080588A CN101226962B CN 101226962 B CN101226962 B CN 101226962B CN 200810080588 CN200810080588 CN 200810080588 CN 200810080588 A CN200810080588 A CN 200810080588A CN 101226962 B CN101226962 B CN 101226962B
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- 238000005516 engineering process Methods 0.000 description 53
- 239000012535 impurity Substances 0.000 description 41
- 238000002955 isolation Methods 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 238000001459 lithography Methods 0.000 description 11
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- 238000001259 photo etching Methods 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
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- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200810080588 CN101226962B (zh) | 2008-02-22 | 2008-02-22 | Hvmos及集成hvmos与cmos的半导体器件 |
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CN 200810080588 CN101226962B (zh) | 2008-02-22 | 2008-02-22 | Hvmos及集成hvmos与cmos的半导体器件 |
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CN101226962A CN101226962A (zh) | 2008-07-23 |
CN101226962B true CN101226962B (zh) | 2013-07-17 |
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CN 200810080588 Active CN101226962B (zh) | 2008-02-22 | 2008-02-22 | Hvmos及集成hvmos与cmos的半导体器件 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9537001B2 (en) | 2014-07-30 | 2017-01-03 | Fairchild Semiconductor Corporation | Reduction of degradation due to hot carrier injection |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101930945B (zh) * | 2009-06-18 | 2013-10-23 | 上海华虹Nec电子有限公司 | Bcd工艺中自对准沟道的dmos的制备方法 |
US8450808B1 (en) * | 2012-01-16 | 2013-05-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | HVMOS devices and methods for forming the same |
JP5915194B2 (ja) * | 2012-01-17 | 2016-05-11 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
CN103295964B (zh) * | 2012-02-27 | 2014-12-10 | 中国科学院上海微系统与信息技术研究所 | 基于混合晶向soi及沟道应力的器件系统结构及制备方法 |
JP7051890B2 (ja) * | 2017-11-13 | 2022-04-11 | 新電元工業株式会社 | ワイドギャップ半導体装置 |
CN108987334A (zh) * | 2018-09-25 | 2018-12-11 | 长江存储科技有限责任公司 | 一种半导体器件 |
CN109950203B (zh) * | 2019-03-20 | 2020-11-24 | 上海华虹宏力半导体制造有限公司 | 半导体器件的集成制造方法 |
CN110783340B (zh) * | 2019-11-11 | 2021-08-31 | 恒烁半导体(合肥)股份有限公司 | 一种浮栅型nor闪存的制作方法、电路以及其应用 |
CN111403428A (zh) * | 2020-03-23 | 2020-07-10 | 中山大学 | 光电传感器、可随机读取有源像素电路、图像传感器和相机装置 |
CN112233981A (zh) * | 2020-10-13 | 2021-01-15 | 长江存储科技有限责任公司 | 半导体器件及其制备方法 |
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- 2008-02-22 CN CN 200810080588 patent/CN101226962B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9537001B2 (en) | 2014-07-30 | 2017-01-03 | Fairchild Semiconductor Corporation | Reduction of degradation due to hot carrier injection |
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Address after: 215021 12b1, phase 3, international science and Technology Park, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee after: Suzhou Saixin Electronic Technology Co.,Ltd. Address before: 215021 12b1, phase 3, international science and Technology Park, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Suzhou Saixin Electronic Technology Co.,Ltd. |
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Address after: 215000 33c, modern media Plaza, 265 Suzhou Avenue East, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Saixin Electronic Technology Co.,Ltd. Address before: 215021 12b1, phase 3, international science and Technology Park, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Suzhou Saixin Electronic Technology Co.,Ltd. |