CN101223644B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101223644B
CN101223644B CN200680025644XA CN200680025644A CN101223644B CN 101223644 B CN101223644 B CN 101223644B CN 200680025644X A CN200680025644X A CN 200680025644XA CN 200680025644 A CN200680025644 A CN 200680025644A CN 101223644 B CN101223644 B CN 101223644B
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semiconductor element
base region
electrode
region
semiconductor
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CN101223644A (zh
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鸟居克行
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Abstract

在不连接外附二极管使半导体装置小型化的同时防止通过电路产生的热集中在半导体基体的中央侧。顺序叠层的第一IGBT(1)以及第二IGBT(2)的第一基极区域(16)，具有接近各半导体基体(31)的侧面(31c)的周边部(26)。各IGBT(1，2)具有邻接N型的第一基极区域形成二极管(21)的P型的周边基极区域(27)和在第一基极区域(16)的周边部(26)的上表面(26a)上形成的二极管电极(24)，将各IGBT(1，2)的二极管电极(24)和集电极电极(23)在电气上进行连接。在半导体装置导通时，在与侧面(31c)分离的半导体基体(31)的中央侧流过电流，但是在半导体装置关断时发生反向电流时，反向电流接近半导体基体(31)的侧面(31c)流动。

Description

半导体装置
技术领域
本发明涉及具有叠层的多个半导体元件的半导体装置。
背景技术
作为应对近年的电子部件的小型化的一个措施，在半导体装置中使用叠层构成桥电路的开关元件的堆叠多元构造。使用堆叠多元构造的半导体装置，例如通过下述专利文献1公知。根据专利文献1表示的半导体装置，能够把使用功率半导体元件的H型桥电路减少支持板的占有面积同时提高集成度形成。但是，当在叠层的功率半导体元件中使用MOSFET(MOS型场效应晶体管)时，芯片尺寸会变大，不能实现小型化。因此，使用了能够减小芯片尺寸形成的IGBT(绝缘栅型双极晶体管)。但是，当使用IGBT时，同时必须也把外附的二极管编入H型桥电路，结果不能实现小型化。另外，由于外附的二极管产品成本增加了。
一般，MOSFET，例如如图5所示，具有：半导体基板(50)和相应的电极，所述半导体基板(50)具有：具有N型导电型的漏极区域(51)、具有P型导电型而且在漏极区域(51)的上表面(51a)上形成的基极区域(52)、具有N型导电型而且在基极区域(52)的上表面(52a)上形成的源极区域(53)，所述相应的电极包括：通过栅极绝缘膜(54)在源极区域(53)的上表面(53a)上形成的栅极电极(55)、在基极区域(52)以及源极区域(53)的上表面(52a，52a)上形成的源极电极(56)、和在漏极区域(51)的下表面(51b)上形成的漏极电极(57)。因此，在具有P型导电型的基极区域(52)和具有N型导电型的漏极区域(51)之间形成二极管(58)，可以把它作为保护用的内置二极管利用。
与此相对，IGBT，如图6所示，具有半导体基板(60)和相应的电极，所述半导体基板(60)具有：具有P型导电型的集电极区域(61)、具有N型导电型而且在集电极区域(61)的上表面(61a)上形成的第一基极区域(62)、具有P型导电型而且在第一基极区域(62)的上表面(62a)上形成的第二基极区域(63)、具有N型导电型而且在第二基极区域(63)的上表面(63a)上形成的发射极区域(64)，所述相应的电极包括：通过栅极绝缘膜(65)在第二基极区域(63)的上表面(63a)上形成的栅极电极(66)、在第二基极区域(63)以及发射极区域(64)的上表面(63a，64a)上形成的发射极电极(67)、和在集电极区域(61)的下表面(61b)上形成的集电极电极(68)。因此，在IGBT中，如图6所示，在具有P型导电型的第二基极区域(63)和具有N型导电型的第一基极区域(62)之间和在具有P型导电型的集电极区域(61)和具有N型导电型的第一基极区域(62)之间分别形成二极管(69)，串联连接反极性的二极管(69)。因此，把该二极管作为保护用的内置二极管有效利用是困难的。在输出端子上连接具有感应成分的负荷的H桥电路等中，容易在IGBT上施加通过负荷的感应成分发生的反电动势。因此，需要在各IGBT上并联二极管，使通过反电动势发生的反向电流(浪涌电流)通过二极管被旁路。
在下述专利文献2中，在集电极区域的中央侧形成与其相反导电型的阴极区域，同时在阴极区域的上方形成P型导电型的阳极区域，由此公开了内置二极管的IGBT。根据专利文献2的IGBT，省略了外附二极管，能够形成叠层IGBT的堆叠多元构造的半导体装置。
专利文献1：国际公开第2005/018001号公报
专利文献2：特开平9-191110号公报
发明内容
但是，在专利文献2的IGBT中，因为对于平面方向必须在半导体基板的相同位置上重叠形成阳极区域和阴极区域，所以两半导体区域的定位困难，在生产性方面有问题。另外，在IGBT导通时，在半导体基板的中央侧的单元区域内电流流过。但是在半导体装置关断时发生反方向电流时，因为该反方向电流也流过半导体基板的中央侧，所以通过电流发生的热集中在半导体基板的中央侧，有使半导体基板的电气特性恶化的担心。
因此，本发明的目的是提供一种叠层内置二极管的IGBT、比常规小型化而且生产也容易的堆叠多元结构的半导体装置。另外的目的是提供一种防止通过电流发生的热集中在半导体基板的中央侧的半导体装置。
本发明的半导体装置具有第一半导体元件(1)、和在第一半导体元件(1)上叠层固定的第二半导体元件(2)。第一半导体元件(1)以及第二半导体元件(2)各个都具有：1.半导体基板(31)，所述半导体基板(31)具有：具有第一导电型(P)的集电极区域(15)、具有和第一导电型(P)相反的第二导电型(N)而且在集电极区域(15)的上表面(15a)上形成的第一基极区域(16)、具有第一导电型(P)而且邻接第一基极区域(16)形成的第二基极区域(17)、具有第二导电型(N)而且邻接第二基极区域(17)形成的发射极区域(18)；2.通过绝缘体(9)在第二基极区域(17)的上表面(17a)上形成的栅极电极(25)；3.在第二基极区域(17)以及发射极区域(18)的上表面(17a，18a)上形成的发射极电极(22)；和4.在集电极区域(15)的下表面(15b)上形成的集电极电极(23)。第一基极区域(16)具有接近半导体基体(31)的侧面(31c)的周边部(26)，第一半导体元件(1)以及第二半导体元件(2)具有：具有第一导电型(P)而且邻接第一基极区域(16)的周边部(26)形成二极管(21)的周边基极区域(27)、和在第一基极区域(16)的周边部(26)的上表面(26a)上形成的二极管电极(24)，对第一半导体元件(1)以及第二半导体元件(2)的二极管电极(24)和集电极电极(23)分别进行电连接。
第一半导体元件(1)以及第二半导体元件(2)，通过由连接的负荷的感应成分引起的反电动势，发生从第一半导体元件(1)以及第二半导体元件(2)的发射极电极(22)向集电极电极(23)反方向感生的反向电流(浪涌电流)，但是通过具有第一导电型(P)的周边基极区域(27)和具有第二导电型(N)的第一基极区域(16)的周边部(26)形成二极管(21)，并电连接在周边部(26)的上表面(26a)上形成的二极管电极(24)和集电极电极(23)，能够使反向电流通过周边基极区域(27)、第一基极区域(16)的周边部(26)以及二极管电极(24)流入集电极电极(23)。因此，不需要在半导体装置上连接外附的二极管，能够形成小型的半导体装置。在半导体装置导通时，电流在与侧面(31c)分离的半导体基体(31)的中央侧流过，但是在半导体装置关断时发生了反向电流时，因为反向电流接近半导体基体(31)的侧面(31c)流动，所以能够防止由电流发生的热集中在半导体基体(31)的中央侧，可防止半导体基体(31)的电气特性恶化。另外，因为接近半导体基体(31)的侧面(31c)形成二极管(21)，所以由二极管(21)中流动的反向电流发生的热从半导体基体(31)的侧面(31c)被良好地排放到外部。
根据本发明，能够提供更小型化而且可靠性高的堆叠多元构造的半导体装置。
附图说明
图1是表示根据本发明的半导体装置的一个实施形态的部分放大截面图。
图2是图1的全体图。
图3是图2的平面图。
图4是图3的电路图。
图5是一般的MOSFET的截面图。
图6是一般的IGBT的截面图。
符号说明
(1)第一半导体元件(第一IGBT)，(2)第二半导体元件(第二IGBT)，(3)第三半导体元件(第三IGBT)，(4)第四半导体元件(第四IGBT)，(5)支持板，(7)第一半导体元件叠层体，(8)第二半导体元件叠层体，(9)绝缘体(栅极绝缘体)，(10)H型桥电路，(13)控制元件，(15)集电极区域，(15a)上表面，(15b)下表面，(16)第一基极区域，(16a)上表面，(17)第二基极区域，(17a)上表面，(18)发射极区域，(18a)上表面，(21)二极管，(22)发射极电极，(23)集电极电极，(24)二极管电极，(25)栅极电极，(26)周边部，(26a)上表面，(27)周边基极区域，(31)半导体基体(半导体基板)，(31c)侧面
具体实施方式
下面对于图1～图4说明通过IGBT构成桥电路的本发明的半导体装置的一个实施形态。
本实施形态的半导体装置，如图1～图3所示，具有：具有散热性的铜或铝等金属制的支持板(5)、第一半导体元件叠层体(7)、第二半导体元件叠层体(8)和控制元件(13)，构成图4所示的H型桥电路(10)。所述第一半导体元件叠层体(7)具有在支持板(5)上顺序叠层固定的作为第一半导体元件的第一IGBT(绝缘栅型双极晶体管)(1)以及作为第二半导体元件的第二IGBT(2)，所述第二半导体元件叠层体(8)具有在支持板(5)上顺序叠层固定的作为第三半导体元件的第三IGBT(3)以及作为第四半导体元件的第四IGBT(4)，所述控制元件(13)控制从第一IGBT(1)到第四IGBT(4)的开关动作。
第一IGBT(1)～第四IGBT(4)的上面电极(发射极电极以及栅极电极)、和控制元件(13)的上面电极(控制电极)或者在支持板(5)的周围配置的多个外部引线(33)，通过线(细引线)(29)连接。在第一IGBT(1)的发射极电极(22)和第二IGBT(2)的集电极电极(23)的连接点(A1)、和第三IGBT(3)的发射极电极(22)和第四IGBT(4)的集电极电极(23)的连接点(A2)之间，连接通过交流电流驱动的例如作为冷阴极荧光放电管的负荷(6)。构成H型桥电路(10)的半导体装置，用树脂密封体(34)覆盖形成一体，但是外部引线(33)从树脂密封体(34)向外部导出。在该外部引线(33)的一部分上连接负荷(6)。
构成第一半导体元件叠层体(7)的第一IGBT(1)以及第二IGBT(2)的一方以及构成第二半导体元件叠层体(8)的第三IGBT(3)以及第四IGBT(4)的一方，构成H型桥电路(10)的高侧开关，构成第一半导体元件叠层体(7)的第一IGBT(1)以及第二IGBT(2)的另一方以及构成第二半导体元件叠层体(8)的第三IGBT(3)以及第四IGBT(4)的另一方，构成H型桥电路(10)的低侧开关。在本实施形态中，低侧的第二IGBT(2)和第四IGBT(4)被固定在高侧的第一IGBT(1)和第三IGBT(3)来构成第一以及第二半导体元件叠层体(7，8)，和在第一半导体元件叠层体(7)和第二半导体元件叠层体(8)之间设置的控制元件(13)一起通过用焊锡、焊料或者银糊组成的粘接剂(32)固定在单一的支持板(5)上。
第二IGBT(2)以及第四IGBT(4)，平面上看，与第一IGBT(1)以及第三IGBT(3)的上表面(1a，3a)以及下表面(1b，3b)比较具有小的面积的上表面(2a，4a)以及下表面(2b，4b)。第一IGBT(1)～第四IGBT(4)，如图1所示，具有由作为半导体基体的单晶硅形成的半导体基板(31)，各半导体基板(31)具有：具有作为第一导电型的P型导电型的集电极区域(15)、具有和P型导电型相反作为第二导电型的N型导电型而且在集电极区域(15)的上表面(15a)上形成的第一基极区域(16)、具有P型导电型而且邻接第一基极区域(16)在上表面侧(16a)形成的第二基极区域(17)、和具有N型导电型而且邻接第二基极区域(17)在上表面侧(17a)形成的发射极区域(18)。
另外，第一IGBT(1)～第四IGBT(4)，分别具有：通过作为绝缘体的栅极绝缘膜(9)在第二基极区域(17)在上表面(17a)上形成的栅极电极(控制电极)(25)、在第二基极区域(17)以及发射极区域(18)的上表面(17a，18a)上形成的发射极电极(上面电极)(22)、在发射极区域(15)的下表面(15b)上形成的集电极电极(底面电极(23)。通过在发射极区域(18)和第一基极区域(16)之间夹持的第二基极区域(17)上通过栅极绝缘膜(9)形成的栅极电极(25)，形成公知的沟道区域。
第二基极区域(17)，对于半导体基板(31)的平面方向，在第一基极区域(16)内以格子状或者条状并列配置。另外，发射极区域(18)，沿第二基极区域(17)的边缘部互相相对配置。进而，栅极电极(25)为了跨越相邻的第二基极区域(17)在第二基极区域(17)之间形成条状。由此，形成作为半导体元件的活性区域的最小单位的单元(30)。第二基极区域(17)，也可以在第一基极区域(16)内形成岛状。虽然未图示，但是在半导体基板(31)的上表面(31a)上，沿半导体基板(31)的周面形成和栅极电极(25)电连接的栅极总线线路。栅极总线线路通过铝等导电性金属形成，覆盖形成条状的栅极电极(25)的延长部分，与栅极电极(25)电连接。
通过导电性的粘接剂(32)，将第一IGBT(1)的发射极电极(22)和第二IGBT(2)的集电极电极(23)在电气上进行连接，将第三IGBT(3)的发射极电极(22)和第四IGBT(4)的集电极电极(23)在电气上进行连接。栅极绝缘膜(9)，例如用二氧化硅形成，在栅极绝缘膜(9)的上表面形成例如用聚硅组成的栅极电极(25)。另外，在栅极电极(25)的周围，形成由在电气上绝缘栅极电极(25)和发射极电极(22)的例如二氧化硅组成的层间绝缘膜(19)。发射极电极(22)以及集电极电极(23)，例如通过叠层铝或铝和镍的叠层体形成。
如图1所示，各IGBT(1，2，3，4)的第一基极区域(16)有接近半导体基板(31)的侧面(31c)的周边部(26)，通过具有邻接第一基极区域(16)的周边部(26)形成的P型导电型的周边基极区域(27)，接近半导体基板(31)的侧面(31c)形成二极管(21)。在图示的半导体装置中，第二基极区域(17)以及发射极区域(18)与形成半导体基板(31)的一角的两个侧面(31c)分离被形成在元件中央侧，与此相对，第一基极区域(16)的周边部(26)以及周边基极区域(27)邻接半导体基板(31)的两个侧面(31c)来形成。亦即，图1所示的IGBT(1，2，3，4)具有在半导体基板(31)的侧面(31c)侧形成的环状的周边部(26)和围绕该周边部(26)在元件中央侧配置的中央部，在周边部(26)上形成二极管(21)，在中央部上形成单元(30)。周边基极区域(27)，在半导体基板(31)的上表面(31a)上扩散硼元素等杂质，可以和第二基极区域(17)一起形成。因此，能够不增加制造成本，通过和已有相同的制造工序形成周边基极区域(27)。在本实施形态中，在面对第二基极区域(17)的一侧的周边基极区域(27)内形成了发射极区域(18)，但是也可以在周边基极区域(27)内不形成发射极区域(18)。
具有在第一基极区域(16)的周边部(26)的上表面(26c)上形成的二极管电极(24)。在图示的半导体装置中，栅极电极(25)以及发射极电极(22)是与半导体基板(31)的两个侧面(31c)分离而形成，与此相对，二极管电极(24)邻接半导体基板(31)的两个侧面(31c)而形成。在二极管电极(24)和发射极电极(22)之间形成间隙(20)，将二极管电极(24)和发射极电极(22)在电气上进行分离。为提高二极管电极(24)和发射极电极(22)的绝缘性，在二极管电极(24)和发射极电极(22)之间形成由二氧化硅组成的未图示的绝缘膜。绝缘膜，在形成层间绝缘膜(19)的工序时，可以和层间绝缘膜(19)一起形成。二极管电极(24)，例如通过和形成线(28)的铝的粘接性高的相同的铝或者含硅的铝形成。另外，二极管电极(24)具有平坦形成的上表面(24a)，通过公知的线粘接法，通过同样平坦地形成了上表面的支持板(5)或者外部引线(33)和线(28)连接。因为通过线(28)连接二极管电极(24)和外部引线(33)的工序可以通过和通过线(29)连接第一IGBT(1)～第四IGBT(4)的上面电极和控制元件(13)的上面电极或者外部引线(33)的工序相同的工序进行，所以能够不增加制造成本地通过和已有相同的制造工序制造半导体装置。
将第一IGBT(1)～第四IGBT(4)的二极管电极(24)和集电极电极(23)分别在电气上进行连接，如图4所示，在各IGBT(1，2，3，4)的发射极和集电极之间并联二极管。构成高侧开关的第一IGBT(1)和第三IGBT(3)，通过用线(28)连接在正侧端子上连接的外部引线(33)和二极管电极(24)，通过在正侧端子上连接的别的外部引线(33)以及支持板(5)将二极管电极(24)和集电极电极(23)在电气上进行连接。构成低侧开关的第二IGBT(2)和第四IGBT(4)，通过用线(28)连接在连接点(A1，A2)上连接的外部引线(33)和二极管电极(24)，通过在连接点(A1，A2)上连接的别的外部引线(33)以及线(29)将二极管电极(24)和集电极电极(23)在电气上进行连接。
在第一IGBT(1)～第四IGBT(4)中，通过由在H型桥电路(10)上连接的负荷(6)的感应成分引起的反电动势，发生从各IGBT(1，2，3，4)的发射极电极(22)向集电极电极(23)反方向感生的反向电流(浪涌电流)，但是通过具有P型导电型的周边基极区域(27)和具有N型导电型的第一基极区域(16)的周边部(26)形成二极管(21)，在电气上连接在周边部(26)的上表面(26a)上形成的二极管电极(24)和集电极电极(23)，由此能够通过周边基极区域(27)、第一基极区域(16)的周边部(26)以及二极管电极(24)使反向电流流入集电极电极(23)。因此，不需要在半导体装置上连接外附的二极管，能够小型地形成构成H型桥电路(10)的半导体装置。
在H型桥电路(10)动作时，通过控制元件(13)，使第一IGBT(1)以及第四IGBT(4)、和第二IGBT(2)以及第三IGBT(3)交互地通·断动作，通过开关动作，能够在连接点(A1)和(A2)之间交互地流过反方向的电路(I1，I2)，使负荷(6)动作。在第一IGBT(1)以及第四IGBT(4)导通时，第二IGBT(2)以及第三IGBT(3)关断，在负荷(6)中流过一个方向的电流(I1)，其后，在把第一IGBT(1)以及第四IGBT(4)切换到关断时，第二IGBT(2)以及第三IGBT(3)被切换到导通，在负荷(6)中流过另一个方向的电流(I2)，负荷(6)由交流电流动作。一个方向的电流(I1)流过第一IGBT(1)、第四IGBT(4)以及支持板(5)，另一个方向的电流(I2)流过第二IGBT(2)、第三IGBT(3)以及支持板(5)。
这样。进行从第一IGBT(1)到第四IGBT(4)的开关动作，能够使用直流电压源点亮在连接点(A1)和(A2)之间连接的冷阴极荧光放电管。在半导体装置导通时，在与侧面(31c)分离的半导体基板(31)的中央侧流过电流，而在半导体装置关断时发生反向电流时，反向电流接近半导体基板(31)的侧面(31c)流过。因此，能够分离流过导通电流的电流通路和流过浪涌电流的电流通路，能够防止通过电流发生的热集中在半导体基板(31)的中央侧，防止半导体基板(31)的电气特性恶化。另外，因为接近半导体基板(31)的侧面(31c)形成二极管(21)，所以通过流过二极管(21)的反向电流发生的热，从半导体基板(31)的侧面(31c)被良好地排放到外部。在图示的H型桥电路(10)中，在使第一IGBT(1)以及第四IGBT(4)导通而使第二IGBT(2)以及第三IGBT(3)关断时，在构成第一IGBT(1)以及第四IGBT(4)的半导体基板(31)的中央侧流过电流。接着，在使第二IGBT(2)以及第三IGBT(3)导通、使第一IGBT(1)以及第四IGBT(4)关断时，在第一IGBT(1)以及第四IGBT(4)上施加反向电压。基于该反向电压的浪涌电流旁路流过在构成第一IGBT(1)以及第四IGBT(4)的半导体基板(31)内设置的二极管(21)，不过该电流如上述接近半导体基板(31)的侧面(31c)流过。
本发明的实施形态，不限于上述实施形态，可以进行各种变更。例如，在图1所示的半导体装置中，是在半导体基板(31)的角部形成了周边基极区域(27)，但是也可以在离开角部的侧面(31c)附近形成。
产业上的可利用性
本发明可以在叠积多个半导体元件形成的半导体装置、构成在冷阴极荧光放电管的驱动装置中使用的H桥电路(全桥电路)等的半导体装置中良好地使用。

Claims (5)

1.一种半导体装置，其具有第一半导体元件和在该第一半导体元件上叠层的第二半导体元件，
所述第一半导体元件以及第二半导体元件各个都具有：
半导体基体，其具有：具有第一导电型的集电极区域、具有和第一导电型相反的第二导电型而且在所述集电极区域的上表面上形成的第一基极区域、具有第一导电型而且邻接所述第一基极区域形成的第二基极区域、和具有第二导电型而且邻接所述第二基极区域形成的发射极区域；
经由绝缘体在所述第二基极区域的上表面上形成的栅极电极；
在所述第二基极区域以及发射极区域的上表面上形成的发射极电极；和
在所述集电极区域的下表面形成的集电极电极，其特征在于，
所述第一基极区域具有接近所述半导体基体侧面的周边部，
所述第一半导体元件以及第二半导体元件具有：具有第一导电型而且邻接所述第一基极区域的周边部形成二极管的周边基极区域、和在所述第一基极区域的周边部的上表面上形成的二极管电极，
所述二极管的阳极仅与所述发射极电极电连接，
将所述第一半导体元件以及第二半导体元件的所述二极管电极和所述集电极电极分别进行了电气连接。
2.根据权利要求1所述的半导体装置，其中，
将所述第一半导体元件的发射极电极和所述第二半导体元件的集电极电极分别进行了电气连接，
使所述第一半导体元件和所述第二半导体元件交互地进行开关动作。
3.一种半导体装置，其具有：具有散热性的支持板、第一半导体元件叠层体、第二半导体元件叠层体和控制元件，所述第一半导体元件叠层体具有在所述支持板上顺序叠层固定的第一半导体元件以及第二半导体元件，所述第二半导体元件叠层体具有在所述支持板上顺序叠层固定的第三半导体元件以及第四半导体元件，所述控制元件控制从所述第一半导体元件到所述第四半导体元件的开关动作，
所述第一～第四半导体元件具有：
半导体基体，其具有：具有第一导电型的集电极区域、具有和第一导电型相反的第二导电型而且在所述集电极区域的上表面上形成的第一基极区域、具有第一导电型而且邻接所述第一基极区域形成的所述第二基极区域、和具有第二导电型而且邻接所述第二基极区域形成的发射极区域；
经由绝缘体在所述第二基极区域的上表面上形成的栅极电极；
在所述第二基极区域以及发射极区域的上表面上形成的发射极电极；和
在所述集电极区域的下表面上形成的集电极电极，
其特征在于，
所述第一基极区域具有接近所述半导体基体侧面的周边部，
所述第一半导体元件～第四半导体元件具有：具有第一导电型而且邻接所述第一基极区域的周边部形成二极管的周边基极区域、和在所述第一基极区域周边部的上表面上形成的二极管电极，
所述二极管的阳极仅与所述发射极电极电连接，
将所述第一半导体元件～第四半导体元件的所述二极管电极和所述集电极电极分别进行了电气连接。
4.根据权利要求3所述的半导体装置，其中，
将所述第一半导体元件的发射极电极和所述第二半导体元件的集电极电极进行电气连接，
将所述第三半导体元件的发射极电极和所述第四半导体元件的集电极电极进行电气连接，
使所述第一半导体元件以及第四半导体元件和所述第二半导体元件以及第三半导体元件交互地进行开关动作。
5.根据权利要求3所述的半导体装置，其中，
所述第一半导体元件叠层体的第一半导体元件以及第二半导体元件、和所述第二半导体元件叠层体的第三半导体元件以及第四半导体元件构成H型桥电路，
构成所述第一半导体元件叠层体的所述第一半导体元件以及第二半导体元件的一方以及构成所述第二半导体元件叠层体的所述第三半导体元件以及第四半导体元件的一方构成所述H型桥电路的高侧开关，
构成所述第一半导体元件叠层体的所述第一半导体元件以及第二半导体元件的另一方以及构成所述第二半导体元件叠层体的所述第三半导体元件以及第四半导体元件的另一方构成所述H型桥电路的低侧开关。
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WO2007010646A1 (ja) 2007-01-25
CN101223644A (zh) 2008-07-16
EP1909329A1 (en) 2008-04-09
KR20080033973A (ko) 2008-04-17
EP1909329B1 (en) 2011-11-02
EP1909329A4 (en) 2008-09-17
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KR100983959B1 (ko) 2010-09-27
JP2007027432A (ja) 2007-02-01

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