CN101207182A - 噻吩电子器件 - Google Patents
噻吩电子器件 Download PDFInfo
- Publication number
- CN101207182A CN101207182A CNA2007101995591A CN200710199559A CN101207182A CN 101207182 A CN101207182 A CN 101207182A CN A2007101995591 A CNA2007101995591 A CN A2007101995591A CN 200710199559 A CN200710199559 A CN 200710199559A CN 101207182 A CN101207182 A CN 101207182A
- Authority
- CN
- China
- Prior art keywords
- phenyl
- oxygen base
- aryl
- alkyl
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229930192474 thiophene Natural products 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 104
- 125000003118 aryl group Chemical group 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 19
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 19
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 19
- 125000001424 substituent group Chemical group 0.000 claims abstract description 10
- -1 methoxyl group Chemical group 0.000 claims description 124
- 239000000463 material Substances 0.000 claims description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 42
- 239000001301 oxygen Substances 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 42
- 125000000217 alkyl group Chemical group 0.000 claims description 35
- 125000003545 alkoxy group Chemical group 0.000 claims description 31
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 28
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 20
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 13
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 13
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 13
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 12
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 12
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 12
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- ZZQWYVKWJHBWRC-UHFFFAOYSA-N [O].C(CCCCCCCCCCC)OCCCCCCCCCCCCC Chemical compound [O].C(CCCCCCCCCCC)OCCCCCCCCCCCCC ZZQWYVKWJHBWRC-UHFFFAOYSA-N 0.000 claims description 8
- MEWQFMZMPMAMTG-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCC MEWQFMZMPMAMTG-UHFFFAOYSA-N 0.000 claims description 8
- PNNXBWWSFIVKQW-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCC PNNXBWWSFIVKQW-UHFFFAOYSA-N 0.000 claims description 8
- FVXZXFWDTIMEMA-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCC FVXZXFWDTIMEMA-UHFFFAOYSA-N 0.000 claims description 8
- CIGIRZIOSVQVKQ-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCCC CIGIRZIOSVQVKQ-UHFFFAOYSA-N 0.000 claims description 8
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 8
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- OTIVLGJBKUFOEX-UHFFFAOYSA-N n-tetradecoxyaniline Chemical compound CCCCCCCCCCCCCCONC1=CC=CC=C1 OTIVLGJBKUFOEX-UHFFFAOYSA-N 0.000 claims description 8
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 125000005447 octyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 claims description 8
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- GTZOZDOTOWNSJH-UHFFFAOYSA-N [O].CCCCCCC Chemical compound [O].CCCCCCC GTZOZDOTOWNSJH-UHFFFAOYSA-N 0.000 claims description 6
- RMSGQZDGSZOJMU-UHFFFAOYSA-N 1-butyl-2-phenylbenzene Chemical group CCCCC1=CC=CC=C1C1=CC=CC=C1 RMSGQZDGSZOJMU-UHFFFAOYSA-N 0.000 claims description 5
- 230000021615 conjugation Effects 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 125000001624 naphthyl group Chemical group 0.000 claims description 5
- 125000003944 tolyl group Chemical group 0.000 claims description 5
- 125000003107 substituted aryl group Chemical group 0.000 claims description 4
- WHLUQAYNVOGZST-UHFFFAOYSA-N tifenamil Chemical group C=1C=CC=CC=1C(C(=O)SCCN(CC)CC)C1=CC=CC=C1 WHLUQAYNVOGZST-UHFFFAOYSA-N 0.000 claims description 4
- 125000001072 heteroaryl group Chemical group 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 53
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 51
- 125000004432 carbon atom Chemical group C* 0.000 description 30
- 239000000243 solution Substances 0.000 description 28
- 239000000126 substance Substances 0.000 description 21
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 16
- 229920002554 vinyl polymer Polymers 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000011230 binding agent Substances 0.000 description 14
- 238000007639 printing Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 10
- 239000002270 dispersing agent Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- 229920001940 conductive polymer Polymers 0.000 description 8
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical class CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 8
- 229920000728 polyester Polymers 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 5
- 239000004567 concrete Substances 0.000 description 5
- 239000002322 conducting polymer Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000037230 mobility Effects 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 5
- 239000002985 plastic film Substances 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 125000000547 substituted alkyl group Chemical group 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 125000005003 perfluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 4
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 4
- 125000005009 perfluoropropyl group Chemical group FC(C(C(F)(F)F)(F)F)(F)* 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 4
- 241000219112 Cucumis Species 0.000 description 3
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- AIGRXSNSLVJMEA-FQEVSTJZSA-N ethoxy-(4-nitrophenoxy)-phenyl-sulfanylidene-$l^{5}-phosphane Chemical compound O([P@@](=S)(OCC)C=1C=CC=CC=1)C1=CC=C([N+]([O-])=O)C=C1 AIGRXSNSLVJMEA-FQEVSTJZSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000003760 magnetic stirring Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
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- 229920000058 polyacrylate Polymers 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
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- 238000010183 spectrum analysis Methods 0.000 description 3
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- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 description 2
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 description 2
- UYEZRRZWTSRZQT-UHFFFAOYSA-N 3-bromo-2-thiophen-2-ylthiophene Chemical compound C1=CSC(C=2SC=CC=2)=C1Br UYEZRRZWTSRZQT-UHFFFAOYSA-N 0.000 description 2
- 229920003026 Acene Polymers 0.000 description 2
- YWWMUOCIAHODNK-UHFFFAOYSA-N CC(C)(C)CCCCCCCCCCCCCCCCl.N Chemical compound CC(C)(C)CCCCCCCCCCCCCCCCl.N YWWMUOCIAHODNK-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 238000007605 air drying Methods 0.000 description 2
- 125000005037 alkyl phenyl group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
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- 238000007766 curtain coating Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000004816 dichlorobenzenes Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 239000000787 lecithin Substances 0.000 description 2
- 229940067606 lecithin Drugs 0.000 description 2
- 235000010445 lecithin Nutrition 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
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Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
基材温度 | 迁移率(cm2/V.s) | 电流通/断比 |
室温 | 0.027 | 105 |
60℃ | 0.15 | 106 |
基材温度 | 迁移率(cm2/V.s) | 电流通/断比 |
室温 | 0.01 | 105 |
60℃ | 0.05 | 106 |
Claims (7)
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US11/638725 | 2006-12-14 | ||
US11/638,725 US7718998B2 (en) | 2006-12-14 | 2006-12-14 | Thiophene electronic devices |
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CN101207182A true CN101207182A (zh) | 2008-06-25 |
CN101207182B CN101207182B (zh) | 2012-02-08 |
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US (1) | US7718998B2 (zh) |
EP (1) | EP1933394B1 (zh) |
JP (1) | JP2008153666A (zh) |
CN (1) | CN101207182B (zh) |
CA (1) | CA2613719C (zh) |
TW (1) | TW200840105A (zh) |
Cited By (1)
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CN102643290A (zh) * | 2012-04-17 | 2012-08-22 | 中国科学院化学研究所 | 二苯并并四噻吩化合物及其制备方法与应用 |
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US20090181509A1 (en) * | 2008-01-14 | 2009-07-16 | Xerox Corporation | Polymer semiconductors with high mobility |
JP5487655B2 (ja) * | 2008-04-17 | 2014-05-07 | 株式会社リコー | [1]ベンゾチエノ[3,2‐b][1]ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス |
CN102224619A (zh) * | 2008-10-21 | 2011-10-19 | 江森自控帅福得先进能源动力系统有限责任公司 | 电池的改善电极结构 |
US7872258B2 (en) * | 2008-11-19 | 2011-01-18 | Xerox Corporation | Organic thin-film transistors |
US20120097903A1 (en) * | 2008-12-19 | 2012-04-26 | Vorbeck Materials Corp. | Inks and coatings containing multi-chain lipids |
US7919634B2 (en) * | 2009-05-28 | 2011-04-05 | Corning Incorporated | Fused thiophenes, articles, and methods thereof |
US20110031475A1 (en) * | 2009-08-10 | 2011-02-10 | Xerox Corporation | Semiconductor Composition |
US8513374B2 (en) | 2009-09-30 | 2013-08-20 | Falguni Dasgupta | Biocompatible and biodegradable polymers from renewable natural polyphenols |
US7956199B2 (en) * | 2009-10-08 | 2011-06-07 | Xerox Corporation | Methods for preparing benzodithiophenes |
US8304512B2 (en) * | 2010-01-19 | 2012-11-06 | Xerox Corporation | Benzodithiophene based materials compositions |
JP5725494B2 (ja) * | 2010-08-18 | 2015-05-27 | 国立大学法人岩手大学 | 有機半導体材料並びに有機半導体装置及びその製造方法 |
US8742403B2 (en) | 2011-03-08 | 2014-06-03 | Samsung Electronics Co., Ltd. | Xanthene based semiconductor compositions |
WO2012156500A1 (en) * | 2011-05-18 | 2012-11-22 | Université Libre de Bruxelles | Semiconducting compound for gas sensing |
WO2014027685A1 (ja) * | 2012-08-15 | 2014-02-20 | 帝人株式会社 | 有機半導体溶液及び有機半導体膜 |
JP6364878B2 (ja) * | 2014-03-31 | 2018-08-01 | 東ソー株式会社 | 有機薄膜トランジスタ |
JP2017059651A (ja) | 2015-09-16 | 2017-03-23 | 株式会社東芝 | 光電変換材料分散液とその製造方法、光電変換膜の製造方法と製造装置、および光電変換素子 |
CN112819125A (zh) * | 2021-01-27 | 2021-05-18 | 北京印刷学院 | 一种导电油墨、rfid织物标签及其制备方法 |
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JP3151997B2 (ja) * | 1993-03-18 | 2001-04-03 | 東洋インキ製造株式会社 | 有機エレクトロルミネッセンス素子 |
US5619357A (en) | 1995-06-06 | 1997-04-08 | International Business Machines Corporation | Flat panel display containing black matrix polymer |
US5969376A (en) | 1996-08-23 | 1999-10-19 | Lucent Technologies Inc. | Organic thin film transistor having a phthalocyanine semiconductor layer |
US6107117A (en) | 1996-12-20 | 2000-08-22 | Lucent Technologies Inc. | Method of making an organic thin film transistor |
JPH10340786A (ja) * | 1997-06-09 | 1998-12-22 | Toyo Ink Mfg Co Ltd | 有機エレクトロルミネッセンス素子材料およびそれを使用した有機エレクトロルミネッセンス素子 |
ATE268806T1 (de) * | 1997-10-23 | 2004-06-15 | Isis Innovation | Lichtemittierende dendrimere |
US5777070A (en) | 1997-10-23 | 1998-07-07 | The Dow Chemical Company | Process for preparing conjugated polymers |
JP4061561B2 (ja) * | 1998-10-21 | 2008-03-19 | 富士電機ホールディングス株式会社 | 有機分子配向薄膜用材料及び有機分子配向薄膜の製造方法 |
US6770904B2 (en) | 2002-01-11 | 2004-08-03 | Xerox Corporation | Polythiophenes and electronic devices generated therefrom |
US7250625B2 (en) | 2002-01-11 | 2007-07-31 | Xerox Corporation | Polythiophenes and electronic devices generated therefrom |
US20030227014A1 (en) | 2002-06-11 | 2003-12-11 | Xerox Corporation. | Process for forming semiconductor layer of micro-and nano-electronic devices |
WO2005016882A1 (en) * | 2003-08-15 | 2005-02-24 | Universite Laval | Monomers, oligomers and polymers of 2-functionalized and 2,7-difunctionalized carbazoles |
ATE452154T1 (de) * | 2003-10-15 | 2010-01-15 | Merck Patent Gmbh | Polybenzodithiophene |
US7402681B2 (en) | 2004-12-14 | 2008-07-22 | Xerox Corporation | Compound with indolocarbazole moieties and devices containing such compound |
US20060124921A1 (en) | 2004-12-14 | 2006-06-15 | Xerox Corporation | Compound with indolocarbazole moieties and devices containing such compound |
JP4614272B2 (ja) * | 2004-12-28 | 2011-01-19 | 国立大学法人京都大学 | 新規チオフェン誘導体及びそれを用いたトランジスタ素子 |
FR2881745A1 (fr) * | 2005-02-08 | 2006-08-11 | Univ Aix Marseille Ii | Derives d'oligothiophenes et leur application en electronique organique |
CN101553929B (zh) * | 2005-04-15 | 2012-12-05 | E.I.内穆尔杜邦公司 | 芳基-乙烯取代的芳族化合物及其作为有机半导体的应用 |
JP5086807B2 (ja) * | 2005-05-13 | 2012-11-28 | Agcセイミケミカル株式会社 | 新規アミノ基含有複素環誘導体および該複素環誘導体を含有する光電変換用増感色素 |
KR20070017692A (ko) * | 2005-08-08 | 2007-02-13 | 삼성전자주식회사 | 저분자 공액 질소 화합물 및 이를 이용한 소자 |
KR20090080522A (ko) * | 2006-11-14 | 2009-07-24 | 이데미쓰 고산 가부시키가이샤 | 유기 박막 트랜지스터 및 유기 박막 발광 트랜지스터 |
US8330147B2 (en) * | 2006-12-04 | 2012-12-11 | Idemitsu Kosan, Co., Ltd. | Organic thin film transistor and organic thin film light emitting transistor having organic semiconductor compound with divalent aromatic hydrocarbon group and divalent aromatic heterocyclic group |
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CN102643290A (zh) * | 2012-04-17 | 2012-08-22 | 中国科学院化学研究所 | 二苯并并四噻吩化合物及其制备方法与应用 |
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US7718998B2 (en) | 2010-05-18 |
CN101207182B (zh) | 2012-02-08 |
CA2613719A1 (en) | 2008-06-14 |
TW200840105A (en) | 2008-10-01 |
EP1933394A3 (en) | 2010-06-23 |
EP1933394B1 (en) | 2019-06-26 |
CA2613719C (en) | 2013-02-19 |
US20080146776A1 (en) | 2008-06-19 |
EP1933394A2 (en) | 2008-06-18 |
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