CN101207126B - 可缩放的应变fet器件及其制备方法 - Google Patents
可缩放的应变fet器件及其制备方法 Download PDFInfo
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- CN101207126B CN101207126B CN200710170211XA CN200710170211A CN101207126B CN 101207126 B CN101207126 B CN 101207126B CN 200710170211X A CN200710170211X A CN 200710170211XA CN 200710170211 A CN200710170211 A CN 200710170211A CN 101207126 B CN101207126 B CN 101207126B
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/615,153 US7538339B2 (en) | 2006-12-22 | 2006-12-22 | Scalable strained FET device and method of fabricating the same |
US11/615,153 | 2006-12-22 |
Publications (2)
Publication Number | Publication Date |
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CN101207126A CN101207126A (zh) | 2008-06-25 |
CN101207126B true CN101207126B (zh) | 2010-06-09 |
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CN200710170211XA Active CN101207126B (zh) | 2006-12-22 | 2007-11-15 | 可缩放的应变fet器件及其制备方法 |
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US (1) | US7538339B2 (zh) |
CN (1) | CN101207126B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104681616A (zh) * | 2013-11-27 | 2015-06-03 | 台湾积体电路制造股份有限公司 | 半导体器件及制造方法 |
Families Citing this family (18)
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US8154107B2 (en) * | 2007-02-07 | 2012-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and a method of fabricating the device |
US7816271B2 (en) * | 2007-07-14 | 2010-10-19 | Samsung Electronics Co., Ltd. | Methods for forming contacts for dual stress liner CMOS semiconductor devices |
US7911001B2 (en) * | 2007-07-15 | 2011-03-22 | Samsung Electronics Co., Ltd. | Methods for forming self-aligned dual stress liners for CMOS semiconductor devices |
US7761838B2 (en) * | 2007-09-26 | 2010-07-20 | Globalfoundries Inc. | Method for fabricating a semiconductor device having an extended stress liner |
US8122394B2 (en) * | 2008-09-17 | 2012-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Performance-aware logic operations for generating masks |
US7960223B2 (en) * | 2008-06-16 | 2011-06-14 | International Business Machines Corporation | Structure and method to integrate dual silicide with dual stress liner to improve CMOS performance |
US8313990B2 (en) | 2009-12-04 | 2012-11-20 | International Business Machines Corporation | Nanowire FET having induced radial strain |
US8309991B2 (en) * | 2009-12-04 | 2012-11-13 | International Business Machines Corporation | Nanowire FET having induced radial strain |
US8440532B2 (en) * | 2010-07-27 | 2013-05-14 | International Business Machines Corporation | Structure and method for making metal semiconductor field effect transistor (MOSFET) with isolation last process |
JP5569243B2 (ja) | 2010-08-09 | 2014-08-13 | ソニー株式会社 | 半導体装置及びその製造方法 |
CN102376579A (zh) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管的制作方法 |
CN102891109B (zh) * | 2011-07-18 | 2015-04-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件形成方法 |
CN103094108B (zh) * | 2011-10-29 | 2015-12-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN103367155B (zh) * | 2012-03-31 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管及mos晶体管的形成方法 |
CN103855025B (zh) * | 2012-12-05 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管及其制作方法 |
CN104681597A (zh) * | 2013-11-28 | 2015-06-03 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US9553172B2 (en) | 2015-02-11 | 2017-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for FinFET devices |
CN109713040A (zh) * | 2018-12-20 | 2019-05-03 | 中国科学院微电子研究所 | 一种集成电路结构 |
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US7053400B2 (en) * | 2004-05-05 | 2006-05-30 | Advanced Micro Devices, Inc. | Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility |
US7002209B2 (en) * | 2004-05-21 | 2006-02-21 | International Business Machines Corporation | MOSFET structure with high mechanical stress in the channel |
US20070099360A1 (en) * | 2005-11-03 | 2007-05-03 | International Business Machines Corporation | Integrated circuits having strained channel field effect transistors and methods of making |
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2006
- 2006-12-22 US US11/615,153 patent/US7538339B2/en active Active
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- 2007-11-15 CN CN200710170211XA patent/CN101207126B/zh active Active
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CN1449585A (zh) * | 2000-11-22 | 2003-10-15 | 株式会社日立制作所 | 半导体器件及其制造方法 |
US6573172B1 (en) * | 2002-09-16 | 2003-06-03 | Advanced Micro Devices, Inc. | Methods for improving carrier mobility of PMOS and NMOS devices |
CN1783496A (zh) * | 2004-11-30 | 2006-06-07 | 国际商业机器公司 | 将应力施加到pfet和nfet晶体管沟道以改善性能的结构和方法 |
CN1832142A (zh) * | 2005-03-01 | 2006-09-13 | 国际商业机器公司 | 制作用于cmos器件的自对准双应力衬里的方法和结构 |
Cited By (2)
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CN104681616A (zh) * | 2013-11-27 | 2015-06-03 | 台湾积体电路制造股份有限公司 | 半导体器件及制造方法 |
CN104681616B (zh) * | 2013-11-27 | 2017-11-03 | 台湾积体电路制造股份有限公司 | 半导体器件及制造方法 |
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US20080150033A1 (en) | 2008-06-26 |
CN101207126A (zh) | 2008-06-25 |
US7538339B2 (en) | 2009-05-26 |
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