CN101198717A - 钌合金溅射靶 - Google Patents
钌合金溅射靶 Download PDFInfo
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- CN101198717A CN101198717A CNA2006800216423A CN200680021642A CN101198717A CN 101198717 A CN101198717 A CN 101198717A CN A2006800216423 A CNA2006800216423 A CN A2006800216423A CN 200680021642 A CN200680021642 A CN 200680021642A CN 101198717 A CN101198717 A CN 101198717A
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- CN
- China
- Prior art keywords
- ruthenium
- atom
- powder
- target
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000929 Ru alloy Inorganic materials 0.000 title claims abstract description 46
- 238000005477 sputtering target Methods 0.000 title claims abstract description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000001301 oxygen Substances 0.000 claims abstract description 101
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 101
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 90
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 79
- 239000000843 powder Substances 0.000 claims abstract description 78
- 238000005245 sintering Methods 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 45
- 229910052715 tantalum Inorganic materials 0.000 claims description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 31
- 238000005275 alloying Methods 0.000 claims description 30
- 238000004581 coalescence Methods 0.000 claims description 8
- 239000011812 mixed powder Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 44
- 239000002994 raw material Substances 0.000 description 20
- 238000006392 deoxygenation reaction Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 12
- 238000007731 hot pressing Methods 0.000 description 12
- 150000003303 ruthenium Chemical class 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 206010021143 Hypoxia Diseases 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 208000018875 hypoxemia Diseases 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- 230000008676 import Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000009423 ventilation Methods 0.000 description 4
- 206010058490 Hyperoxia Diseases 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000222 hyperoxic effect Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- CMIQNFUKBYANIP-UHFFFAOYSA-N ruthenium tantalum Chemical compound [Ru].[Ta] CMIQNFUKBYANIP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001029 Hf alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- WOUPYJKFGJZQMH-UHFFFAOYSA-N [Nb].[Ru] Chemical compound [Nb].[Ru] WOUPYJKFGJZQMH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- SBMOYLTZKABMRO-UHFFFAOYSA-N hafnium ruthenium Chemical compound [Ru].[Hf] SBMOYLTZKABMRO-UHFFFAOYSA-N 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- DPGAAOUOSQHIJH-UHFFFAOYSA-N ruthenium titanium Chemical compound [Ti].[Ru] DPGAAOUOSQHIJH-UHFFFAOYSA-N 0.000 description 1
- QLHCBKPNNDKZOJ-UHFFFAOYSA-N ruthenium zirconium Chemical compound [Zr].[Ru] QLHCBKPNNDKZOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
原料Ru粉氧(ppm) | Ru粉粒径(μm) | 组成(Ta添加量) | 烧结条件 | 烧结体密度(%) | 氧(ppm) | 粒径(μm) | B(ppm) | P(ppm) | |
实施例1 | 520 | 1.5 | 5原子% | 脱氧步骤+通常烧结 | 99 | 110 | 27 | <0.2 | <0.3 |
实施例2 | 520 | 1.5 | 10原子% | 脱氧步骤+通常烧结 | 99.1 | 120 | 30 | <0.2 | <0.3 |
实施例3 | 520 | 1.5 | 20原子% | 脱氧步骤+通常烧结 | 99.2 | 150 | 26 | <0.2 | <0.3 |
实施例4 | 520 | 1.5 | 30原子% | 脱氧步骤+通常烧结 | 99.1 | 220 | 24 | <0.2 | <0.3 |
实施例5 | 520 | 1.5 | 40原子% | 脱氧步骤+通常烧结 | 99.2 | 180 | 60 | <0.2 | <0.3 |
实施例6 | 520 | 1.5 | 60原子% | 脱氧步骤+通常烧结 | 99.3 | 270 | 40 | <0.2 | <0.3 |
实施例7 | 2100 | 0.7 | 5原子% | 脱氧步骤+通常烧结 | 99.6 | 290 | 15 | <0.2 | <0.3 |
实施例8 | 2100 | 0.7 | 10原子% | 脱氧步骤+通常烧结 | 99.6 | 320 | 16 | <0.2 | <0.3 |
实施例9 | 2100 | 0.7 | 20原子% | 脱氧步骤+通常烧结 | 99.7 | 380 | 15 | <0.2 | <0.3 |
实施例10 | 2100 | 0.7 | 30原子% | 脱氧步骤+通常烧结 | 99.9 | 360 | 17 | <0.2 | <0.3 |
实施例11 | 2100 | 0.7 | 40原子% | 脱氧步骤+通常烧结 | 100 | 550 | 13 | <0.2 | <0.3 |
实施例12 | 2100 | 0.7 | 60原子% | 脱氧步骤+通常烧结 | 99.3 | 420 | 15 | <0.2 | <0.3 |
实施例13 | 3000 | 0.3 | 5原子% | 脱氧步骤+通常烧结 | 99.3 | 410 | 7 | <0.2 | <0.3 |
实施例14 | 3000 | 0.3 | 10原子% | 脱氧步骤+通常烧结 | 99.3 | 450 | 7 | <0.2 | <0.3 |
实施例15 | 3000 | 0.3 | 20原子% | 脱氧步骤+通常烧结 | 99.4 | 530 | 6 | <0.2 | <0.3 |
实施例16 | 3000 | 0.3 | 30原子% | 脱氧步骤+通常烧结 | 99.4 | 860 | 6 | <0.2 | <0.3 |
实施例17 | 3000 | 0.3 | 40原子% | 脱氧步骤+通常烧结 | 99.2 | 620 | 10 | <0.2 | <0.3 |
实施例18 | 3000 | 0.3 | 60原子% | 脱氧步骤+通常烧结 | 99.4 | 780 | 11 | <0.2 | <0.3 |
原料Ru粉氧(ppm) | Ru粉粒径(μm) | 组成(Ta添加量) | 烧结条件 | 烧结体密度(%) | 氧(ppm) | 粒径(μm) | B(ppm) | P(ppm) | |
比较例1 | 520 | 1.5 | - | 通常烧结 | 95.8 | 60 | 6 | 5 | 3 |
比较例2 | 2100 | 0.7 | - | 通常烧结 | 98.6 | 85 | 3 | 5 | 2 |
比较例3 | 3000 | 0.3 | - | 通常烧结 | 99.5 | 110 | <1 | 10 | 2 |
比较例4 | 2100 | 0.7 | 0.5原子% | 通常烧结 | 96 | 120 | 8 | 10 | 2 |
比较例5 | 2100 | 0.7 | 3原子% | 通常烧结 | 96 | 310 | 9 | 15 | 1 |
比较例6 | 2100 | 0.7 | 70原子% | 通常烧结 | 97.1 | 1300 | 16 | 5 | 3 |
比较例7 | 2100 | 0.7 | 80原子% | 通常烧结 | 98.3 | 1200 | 15 | 5 | 3 |
比较例8 | 2100 | 0.7 | 90原子% | 通常烧结 | 95.6 | 1100 | 13 | 10 | 3 |
比较例9 | 520 | 1.5 | 5原子% | 通常烧结 | 95 | 1100 | 5 | 15 | 3 |
比较例10 | 520 | 1.5 | 10原子% | 通常烧结 | 96.5 | 1200 | 5 | 15 | 3 |
比较例11 | 520 | 1.5 | 20原子% | 通常烧结 | 97.5 | 1900 | 1.5 | 5 | 2 |
比较例12 | 520 | 1.5 | 30原子% | 通常烧结 | 95.5 | 1700 | 2.3 | 5 | 2 |
比较例13 | 520 | 1.5 | 40原子% | 通常烧结 | 95.6 | 2000 | 4 | 5 | 1 |
比较例14 | 520 | 1.5 | 60原子% | 通常烧结 | 97 | 1300 | 3 | 5 | 1 |
比较例15 | 2100 | 0.7 | 5原子% | 通常烧结 | 95 | 2500 | 5 | 5 | 1 |
比较例16 | 2100 | 0.7 | 10原子% | 通常烧结 | 96.5 | 3000 | 5 | 5 | 1 |
比较例17 | 2100 | 0.7 | 20原子% | 通常烧结 | 97.5 | 3300 | 1.5 | 5 | 1 |
比较例18 | 2100 | 0.7 | 30原子% | 通常烧结 | 95.5 | 3900 | 2.3 | 5 | 2 |
比较例19 | 2100 | 0.7 | 40原子% | 通常烧结 | 95.6 | 3500 | 4 | 5 | 2 |
比较例20 | 2100 | 0.7 | 60原子% | 通常烧结 | 97 | 2200 | 3 | 5 | 2 |
比较例21 | 2100 | 0.7 | 5原子% | 通过等离子体熔炼法合金化+通常烧结 | 93.2 | 1300 | 3 | <0.2 | <0.3 |
比较例22 | 2100 | 0.7 | 10原子% | 通过等离子体熔炼法合金化+通常烧结 | 93.1 | 1300 | 4 | <0.2 | <0.3 |
比较例23 | 2100 | 0.7 | 20原子% | 通过等离子体熔炼法合金化+通常烧结 | 93.5 | 1500 | 3 | <0.2 | <0.3 |
比较例24 | 2100 | 0.7 | 30原子% | 通过等离子体熔炼法合金化+通常烧结 | 95.3 | 1900 | 11 | <0.2 | <0.3 |
比较例25 | 2100 | 0.7 | 40原子% | 通过等离子体熔炼法合金化+通常烧结 | 97.1 | 1700 | 7 | <0.2 | <0.3 |
比较例26 | 2100 | 0.7 | 60原子% | 通过等离子体熔炼法合金化+通常烧结 | 99.8 | 1800 | 9 | <0.2 | <0.3 |
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005175878 | 2005-06-16 | ||
JP175878/2005 | 2005-06-16 | ||
PCT/JP2006/309698 WO2006134743A1 (ja) | 2005-06-16 | 2006-05-16 | ルテニウム合金スパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101198717A true CN101198717A (zh) | 2008-06-11 |
CN101198717B CN101198717B (zh) | 2010-10-13 |
Family
ID=37532110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800216423A Active CN101198717B (zh) | 2005-06-16 | 2006-05-16 | 钌合金溅射靶 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9732413B2 (zh) |
EP (1) | EP1892315B1 (zh) |
JP (2) | JP5234735B2 (zh) |
CN (1) | CN101198717B (zh) |
TW (1) | TW200702462A (zh) |
WO (1) | WO2006134743A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102066025A (zh) * | 2008-08-28 | 2011-05-18 | Jx日矿日石金属株式会社 | 包含贵金属粉末和氧化物粉末的混合粉末的制造方法及包含贵金属粉末和氧化物粉末的混合粉末 |
TWI619819B (zh) * | 2015-09-16 | 2018-04-01 | 光洋應用材料科技股份有限公司 | 釕鈦合金粉末及釕鈦濺鍍靶材 |
CN113272978A (zh) * | 2019-01-18 | 2021-08-17 | 东曹株式会社 | 硅化物系合金材料和使用它的热电转换元件 |
US11839158B2 (en) | 2019-01-18 | 2023-12-05 | Tosoh Corporation | Silicide alloy material and thermoelectric conversion device in which same is used |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2004001092A1 (ja) * | 2002-06-24 | 2003-12-31 | Nikko Materials Company, Limited | AlRuスパッタリングターゲット及びその製造方法 |
US7871564B2 (en) * | 2005-10-14 | 2011-01-18 | Jx Nippon Mining & Metals Corporation | High-purity Ru alloy target, process for producing the same, and sputtered film |
EP1942202A3 (en) * | 2007-01-08 | 2010-09-29 | Heraeus, Inc. | High density, low oxygen Re and Re-based consolidated powder materials for use as deposition sources & methods of making the same |
JP5706035B2 (ja) | 2012-07-30 | 2015-04-22 | Jx日鉱日石金属株式会社 | ルテニウムスパッタリングターゲット及びルテニウム合金スパッタリングターゲット |
JPWO2016052371A1 (ja) | 2014-09-30 | 2017-06-08 | Jx金属株式会社 | スパッタリングターゲット用母合金及びスパッタリングターゲットの製造方法 |
CN106756826A (zh) * | 2016-11-25 | 2017-05-31 | 东莞市联洲知识产权运营管理有限公司 | 一种高纯度钽钌合金靶材及其制备方法 |
CN107805789B (zh) * | 2017-11-30 | 2019-09-03 | 清远先导材料有限公司 | 一种钌溅射靶材的制备方法 |
JP7072664B2 (ja) * | 2018-09-25 | 2022-05-20 | Jx金属株式会社 | スパッタリングターゲット及びスパッタリングターゲットの製造方法 |
JPWO2022004354A1 (zh) * | 2020-06-30 | 2022-01-06 |
Family Cites Families (16)
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JP3387934B2 (ja) * | 1996-11-20 | 2003-03-17 | 株式会社東芝 | スパッタリングターゲット |
JP4058777B2 (ja) | 1997-07-31 | 2008-03-12 | 日鉱金属株式会社 | 薄膜形成用高純度ルテニウム焼結体スパッタリングターゲット及び同ターゲットをスパッタリングすることによって形成される薄膜 |
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WO2005083136A1 (ja) * | 2004-03-01 | 2005-09-09 | Nippon Mining & Metals Co., Ltd. | 高純度Ru粉末、該高純度Ru粉末を焼結して得るスパッタリングターゲット及び該ターゲットをスパッタリングして得た薄膜並びに高純度Ru粉末の製造方法 |
US7871564B2 (en) * | 2005-10-14 | 2011-01-18 | Jx Nippon Mining & Metals Corporation | High-purity Ru alloy target, process for producing the same, and sputtered film |
-
2006
- 2006-05-16 WO PCT/JP2006/309698 patent/WO2006134743A1/ja active Application Filing
- 2006-05-16 EP EP06746412.3A patent/EP1892315B1/en active Active
- 2006-05-16 JP JP2007521222A patent/JP5234735B2/ja active Active
- 2006-05-16 US US11/916,860 patent/US9732413B2/en active Active
- 2006-05-16 CN CN2006800216423A patent/CN101198717B/zh active Active
- 2006-05-19 TW TW095117854A patent/TW200702462A/zh unknown
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2012
- 2012-06-19 JP JP2012137994A patent/JP5431535B2/ja active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102066025A (zh) * | 2008-08-28 | 2011-05-18 | Jx日矿日石金属株式会社 | 包含贵金属粉末和氧化物粉末的混合粉末的制造方法及包含贵金属粉末和氧化物粉末的混合粉末 |
TWI619819B (zh) * | 2015-09-16 | 2018-04-01 | 光洋應用材料科技股份有限公司 | 釕鈦合金粉末及釕鈦濺鍍靶材 |
CN113272978A (zh) * | 2019-01-18 | 2021-08-17 | 东曹株式会社 | 硅化物系合金材料和使用它的热电转换元件 |
US11839158B2 (en) | 2019-01-18 | 2023-12-05 | Tosoh Corporation | Silicide alloy material and thermoelectric conversion device in which same is used |
CN113272978B (zh) * | 2019-01-18 | 2024-06-11 | 东曹株式会社 | 硅化物系合金材料和使用它的热电转换元件 |
Also Published As
Publication number | Publication date |
---|---|
WO2006134743A1 (ja) | 2006-12-21 |
EP1892315A1 (en) | 2008-02-27 |
TWI330204B (zh) | 2010-09-11 |
US9732413B2 (en) | 2017-08-15 |
JP2012237067A (ja) | 2012-12-06 |
EP1892315B1 (en) | 2013-04-24 |
JPWO2006134743A1 (ja) | 2009-01-08 |
EP1892315A4 (en) | 2008-07-23 |
US20090114535A1 (en) | 2009-05-07 |
CN101198717B (zh) | 2010-10-13 |
JP5234735B2 (ja) | 2013-07-10 |
JP5431535B2 (ja) | 2014-03-05 |
TW200702462A (en) | 2007-01-16 |
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