CN101189553B - 导电性平版印刷聚合物及用其制作器件的方法 - Google Patents
导电性平版印刷聚合物及用其制作器件的方法 Download PDFInfo
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- CN101189553B CN101189553B CN200580029888.0A CN200580029888A CN101189553B CN 101189553 B CN101189553 B CN 101189553B CN 200580029888 A CN200580029888 A CN 200580029888A CN 101189553 B CN101189553 B CN 101189553B
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- conductive
- polymer film
- film
- base material
- conductive photolithographic
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
- G03C1/73—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705 containing organic compounds
- G03C1/735—Organo-metallic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
本发明涉及一种导电性照相平版印刷膜和用所述导电性照相平版印刷膜形成器件的方法。所述方法包括在基材的顶面上淀积导电性照相平版印刷膜;和用平版印刷工艺使所述导电性照相平版印刷膜图案化以产生期望的电路图案。所述导电性照相平版印刷膜包含约50%-约60%的环氧丙烯酸酯、热固化剂和导电性聚合物的混合物;约20%-约30%的平版印刷活性组分;约10%-约15%的光活性材料;和约3%-约5%的添加剂,所述添加剂增强所述导电性照相平版印刷聚合物的导电性。
Description
背景
本发明的实施方案涉及导电性平版印刷聚合物及为包含所述导电性平版印刷聚合物的器件制作互连和导电部件的方法。
集成电路是在半导体材料内和覆盖在半导体表面上的电介质材料内形成的器件的互连整体。举几个例子来说,可在半导体内形成的器件包括晶体管、双极晶体管、二极管和扩散电阻。可在电介质内形成的器件包括薄膜电阻和电容。硅或含硅材料通常被用作这些器件的基材。
通常,单个的8-英寸直径的硅片上构建有100多个集成电路芯片(IC芯片)。器件通过电介质内形成的导电通路(也称金属化层)互连。通常两层或多层导电通路被用作互连,相继的层为电介质层所隔开。在目前的做法中,金属化层(通常由铜制成)在电介质层上形成以创建导电通路。形成金属化层的加工方法的实例包括化学气相淀积(CVD)、物理气相淀积(PVD)和电化学淀积。已经发现,铜的电化学淀积是淀积铜金属化层最经济高效的方式。除经济可行外,这样的淀积技术提供基本等厚的铜膜,这样的铜膜从机械和电学上都适合于互连结构。
这里描述一下电化学淀积的实例(图1A-1E)。首先,在基材106的绝缘层104上形成化学镀铜层102,基材106上可包括导电部件或器件108(图1A)。绝缘层104包括通孔或通路110以实现与导电部件108的连接。绝缘层104通常插在多层上所形成的导电图案之间,目的是确保导电图案之间的电绝缘。
接着,在化学镀铜层102上制作光刻胶层112的图案,如图1B所示。接着,在裸露的化学镀铜层102上形成电解镀铜层114,如图1C所示。化学镀铜层102用作电解镀层114的馈电(electrical feed)或 种子层。
接着,如图1D所示,除去光刻胶层112。接着,用铜蚀刻液除去裸露的化学镀铜层102,如图1E所示。通常用碱性蚀刻液作为蚀刻溶液。由于前述原因,导电图案116(其中,电解镀铜层114被层压在化学镀铜层102上)可在绝缘层104上形成。要形成多层器件,该工艺通常被反复重复。
由于膜层压以完成导电层的图案化所消耗的时间,现有做法使器件(例如印刷电路板)的制作需要较长的时间。需要多次使用光刻胶层,还得多次使用化学镀层和电解镀层,并得在每一步中除去。此外,对于化学溶液,需要各种控制系统以保持生产线稳定性,例如,在化学镀工艺中需要精确并小心地控制待淀积的量并控制化学镀层的厚度。器件的制作工艺因此而耗时且费用高昂。
附图简述
本发明的实施方案通过以附图中的部件作为实例予以说明(而并非限制于附图中的部件),其中,类似的编号表示类似的元件。本发明最好参照下面的描述和用来说明本发明的实施方案的附图来理解。应该指出,本说明书中提到的“一个”本发明的实施方案不一定指同一个实施方案,而是指至少一个。在附图中:
图1A-1E示意了采用电化学法为器件形成导电通路的现有做法的实例;
图2A-2E示意了按本发明的实施方案形成导电通路的示例性方法;和
图3A-3D示意了按本发明的实施方案形成导电通路的另一种示例性方法;
发明详述
下文参照具体的构造和技术对示例性的实施方案予以了说明。 本领域技术人员会理解可在附随的权利要求范围内作各种改变和调整。此外,广为人知的元件、器件、部件、电路、工艺步骤等未予以详细陈述。
本发明的示例性实施方案涉及导电性平版印刷聚合物以及制作具有包含所述导电性平版印刷聚合物的互连和导电部件的器件(如印刷电路板)的方法。器件的整个制作工艺中都用到导电线路和导电通路。例如,器件在基材上形成并通过绝缘层和导电通路或金属化层彼此互连。如前面所讨论的,电化学法是一种众所周知的方法,广泛用于制作这样的导电通路。在制作半导体器件的导电通路时,常规的方法通常需要多个蚀刻和平版印刷步骤。对于器件制作,现有的做法需要的生产时间长且成本高昂。
本发明的示例性实施方案公开了一种导电性平版印刷聚合物,所述聚合物可用来为半导体器件制作导电通路、金属化层或其他导电部件。本文中所用的导电性平版印刷聚合物可为合成材料,包括内在导电聚合物和有光学性质的聚合物。导电性平版印刷聚合物也可为包含平版印刷聚合物和导电聚合物的材料,所述导电聚合物包含非导电性聚合物和导电材料如金属或碳粉的物理混合物。导电性平版印刷聚合物也可为包含平版印刷聚合物和导电聚合物的材料,所述导电聚合物包含导电性聚合物和另外的导电材料(如添加到聚合物中以增强导电性聚合物的导电性的金属或碳粉)的物理混合物。由于其光学性质,导电性平版印刷聚合物可用作光刻胶材料。可用标准的平版印刷方法来制作导电性平版印刷聚合物的图案。由于其导电性质,用导电性平版印刷聚合物形成的线、线路(trace)或通路可被用作导电线路或通路或金属化层。导电性平版印刷聚合物因此可取代前面提到的普通的光刻胶层加化学镀层或可取代前面提到的普通的光刻胶层、化学镀层和电解镀层。导电性平版印刷聚合物也可用来形成其他目前用金属如铜形成的导电线路和/或金属化层。
在一个实施方案中,所述导电性平版印刷聚合物为混合物,所述混合物包含(1)约50%-约60%(重量百分数)的环氧丙烯酸酯、热固化剂和导电性聚合物的混合物;(2)约20%-约30%(重量百分数)的平版印刷活性组分;(3)约10%-约15%(重量百分数)的光活性材料;和④约3%-约5%(重量百分数)的添加剂以提高所述导电性平版印刷聚合物的导电性或用作所述导电性平版印刷聚合物的其他功能导电性。
环氧丙烯酸酯、热固化剂和导电性聚合物的比率可随导电性平版印刷聚合物的期望导电水平和混合物所用导电性聚合物的导电性而异。
在一个实施方案中,所述环氧丙烯酸酯为酸官能单体和非酸官能单体的混合物。所述环氧丙烯酸酯可选自丙烯酸、甲基丙烯酸、马来酸、富马酸、柠康酸、2-丙烯酰氨基-2-甲基丙磺酸、磷酸丙烯酰酯2-羟乙酯(2-hydroxyethyl acrylolyl phosphate)、磷酸丙烯酰酯2-羟丙酯、2-羟基-α-丙烯酰基磷酸酯(2-hydroxy-alpha-acryloyl phosphate)、丙烯酸甲酯、丙烯酸2-乙基己酯、丙烯酸正丁酯、丙烯酸正己酯、甲基丙烯酸甲酯、丙烯酸羟乙酯、甲基丙烯酸丁酯、丙烯酸辛酯、甲基丙烯酸2-乙氧基乙酯和丙烯酸叔丁酯。
在一个实施方案中,所述热固化剂选自咪唑、咪唑衍生物、2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、4-苯基咪唑、1-氰乙基-2-苯基咪唑、1-(2-氰乙基)-2-乙基-4-甲基咪唑、胍胺、乙酰胍胺、苯并胍胺、胺、双氰胺、苄基二甲基胺、4-(二甲氨基)-N,N-二甲基苄基胺、4-甲氧基-N,N-二甲基苄基胺、4-甲基-N,N-二甲基苄基胺、蜜胺、酚醛树脂、苯酚线型酚醛树脂和甲酚线型酚醛树脂。
在一个实施方案中,所述导电性聚合物为内在或天然导电的。在一个实施方案中,所述导电性聚合物选自聚苯胺、聚吡咯、聚噻吩、聚亚苯基亚乙烯基、聚二烷基芴、聚苯胺衍生物、聚吡咯衍生物、聚噻吩衍生物和纳米复合聚合物。所述导电性材料也可为I(AsF5)、聚乙炔或含掺杂剂的聚硫氮化物。
在一个实施方案中,所述平版印刷活性组分为单体、二聚体或含烯属不饱和键的短链低聚物。所述平版印刷活性组分可选自苯乙烯马来酸酐共聚物和类似含酸酐的共聚物,其中各苯乙烯马来酸酐共聚物和类似含酸酐的共聚物用羟基官能的(甲基)丙烯酸酯部分酯化。在一个实施方案中,所述羟基官能的(甲基)丙烯酸酯选自丙烯酸羟乙酯、丙烯酸、甲基丙烯酸、马来酸、富马酸和柠康酸官能单体。
在一个实施方案中,所述光活性材料选自9-苯基吖啶、N-苯基甘氨酸、芳香酮、4,4’-二(N,N-二乙氨基)二苯甲酮和4-甲氧基-4’-二甲氨基二苯甲酮。所述芳香酮可为二苯甲酮、4,4’-二(N,N-二甲氨基)二苯甲酮。
表面活性剂也可包含在所述添加剂中。在一个实施方案中,所述添加剂选自成色剂、表面活性剂、催化剂、填料、增塑剂和金属粉末。所述添加剂可为能增强聚合物导电性的组分。可用作添加剂的材料也包括导电剂、金属、金属粉末和纳米尺寸的金属粉末。所述导电材料可为铜、金、钛、铬、铝、铁、镍、钴、锌、铜锌、镍-铁、钴-铁、银、石墨或炭黑粉末等。
制备导电性平版印刷聚合物的混合物中包含溶剂。所述溶剂可选自各种类型的适宜有机溶剂,包括烃类溶剂或醇。所述有机溶剂也可选自酮、甲基乙基酮、环己酮、芳烃、甲苯、二甲苯、四甲基苯、二醇醚、二乙二醇单乙基醚、二丙二醇二乙基醚、酯、乙酸乙酯、乙酸丁酯、丁基溶纤剂乙酸酯、乙酸卡必醇酯、脂族烃、辛烷、癸烷、石油溶剂、石油醚、石脑油和溶剂石脑油。
导电性照相平版印刷聚合物具有与导电性金属如铜、铁、镍、钴、锌、铜锌、镍-铁或钴-铁可比的导电性。通过改变添加剂或金属粉末的浓度,可使导电性照相平版印刷聚合物的导电性与这些导电性金属的导电性媲美。在一个实施方案中,导电性照相平版印刷聚合物的导电性在约1×10-10-约1×106西门子每厘米的范围内。通常,铜的导电水平为约1×106西门子每厘米,半导体材料的导电水平为约1×10-8西门子每厘米-约1×102西门子每厘米。
可用器件制作中目前使用的平版印刷技术获得用所述导电性平版印刷聚合物形成的膜、图案或线。可用标准的平版印刷技术在各种基材上制作导电性平版印刷聚合物的膜、线或图案。制作后,这些导电性平版印刷聚合物的膜、线或图案可形成导电部件或金属化用于各种半导体或电子器件。导电性平版印刷聚合物可从油墨、溶液或干膜通过淀积、印刷或层压工艺在基材上形成。导电性平版印刷聚合物可用在电子器件、微电子器件、微处理器、芯片组、电气控制器、印刷电路板、电气设备、光耦合器、光电元件、显示元件、液晶显示器或平板显示器等的制作中,这些器件的电路中均可使用所述导电性平版印刷聚合物。
在一个实施方案中,电子器件如印刷电路板用如上文所描述的导电性平版印刷聚合物形成。应该指出,前述导电性平版印刷聚合物的示例性混合物不是可用于制作电子器件中所用导电性平版印刷聚合物的唯一组分。可从所述导电性照相平版印刷聚合物得益的电子器件的制作将参照图2A-2D进行描述。
首先,在核心基材200的两个表面(顶面和底面)上形成具有开口240作为通路或通孔的绝缘层250(图2A)。基材200可为任何期望的基材如有机材料、陶瓷、玻璃或半导体材料(如硅、含硅材料、绝缘材料上的硅、硅锗材料)。基材200可包括在其上或其中形成的微电子结构如晶体管或集成电路(未示出)。
基材200也包括导电部件202。导电部件202可在基材200的顶面、侧面和底面上形成。导电部件202可为已用本领域内熟知的方法在基材200中形成的器件(如晶体管或集成电路)(未示出)的一个或多个导电接点或金属化层。所述导电接点可由铜、钛、铝、铬或其他适合的导电性材料制成。
绝缘层250为半导体器件中通常使用的常规的电介质或绝缘材料。绝缘层250用本领域内熟知的常规方法在基材200上形成。通路或通孔240穿过绝缘层250产生以便可为导电部件202建立电接点。取决于应用和器件,绝缘层250可在基材200的顶面和底面两个面上形成。
接着,在绝缘层250的表面上形成导电性照相平版印刷膜230(图2A)。在一个实施方案中,导电性照相平版印刷膜230在绝缘层250的顶面和底面两个面上形成。在一个实施方案中,导电性照相平版印刷膜230从油墨溶液形成,其中,导电性照相平版印刷材料被印或敷在绝缘层250的表面上。然后让印上的导电性照相平版印刷材料干燥或固化以形成导电性照相平版印刷膜230。或者,导电性照相平版印刷膜230可通过将干膜层压到绝缘层250的表面上形成。可施加压力和温度以使导电性照相平版印刷膜230流进通路或通孔240中而与导电部件202接触。
接着,用掩模241按膜230的期望电路图案用本领域内熟知的与掩蔽光刻胶膜类似的方法掩蔽导电性照相平版印刷膜230(图2B)。然后,将导电性照相平版印刷膜230暴露在例如约50-150mJ/cm2的光245中,如在暴露光刻胶膜时常做的那样。然后,经曝光的导电性照相平版印刷膜230经显影以产生期望的导电性平版印刷膜图案。膜230一经显影,导电性平版印刷膜的未掩蔽部分230即被除去,留下导电性平版印刷膜被掩蔽的部分232,如图2C中所示。显影液可为本领域内熟知的用来使光刻胶膜显影的常规显影液,例如钠的0.7-1.0%溶液。
导电性照相平版印刷膜232可具有与如前所述形成导电通路的常规工艺中所用典型的化学镀膜的厚度类似的厚度。在一个实施方案中,导电性照相平版印刷膜232的厚度介于约0.5μm-约10μm之间。
导电性照相平版印刷膜232的线路的设计或构造应使所有线路与电解镀铜的外极(未示出)相连。连接线路在电解镀铜后蚀刻。
接着,用本领域内熟知的方法在导电性照相平版印刷膜232上形成电解镀膜234(图2D)。例如,电解镀膜234可通过将基材200 浸入电镀液中并使电流流经导电性照相平版印刷膜232而形成。电解镀膜234将在导电性照相平版印刷膜232上形成。电解镀膜234的厚度可为约5-30μm。电解镀膜234通常为电解镀铜膜。在一个实施方案中,包含约180g/L的硫酸和约80g/L的硫酸铜的溶液被用于电解镀工艺中以形成电解镀膜234。电解镀膜234和导电性照相平版印刷膜232一起形成半导体器件的导电图案或电路图案236。在导电性照相平版印刷膜232在基材200的顶面和底面上形成的实施方案中,电解镀膜234也可在基材200的顶面和底面两个面上形成,如图2D中所示。电解镀后,用常规方法蚀刻除去与用于电解镀的外极相连的线路。
要形成多层半导体器件的其他导电图案层,图2A-2D中所示的工艺可根据需要重复多次。例如,可在基材200顶上和导电图案236上形成另一个绝缘层247,如图2E所示。通路/通孔249穿过绝缘层产生以便与导电图案236或基材200上的其他导电部件建立连接。然后,所述形成导电性照相平版印刷膜和前述电解膜的工艺可同样重复进行以产生另外的期望的电路图案。
在一个实施方案中,上面所示的导电部件202也可从导电性平版印刷聚合物制得。在本实施方案中,导电性平版印刷聚合物(如前述那些)(以油墨或干膜形式)被形成、淀积或层压到基材200上以形成导电性平版印刷聚合物膜。导电性平版印刷聚合物膜然后以与前述类似的方式被掩蔽、曝光和显影以为导电部件202形成期望的电路图案。在导电性平版印刷膜的图案形成后,再在基材250上形成导电元件202。在导电性平版印刷聚合物以膜的形式敷设的实施方案中,可施加压力和温度以使导电性平版印刷聚合物膜流进基材200上的缝隙、开口、沟槽或通路(未示出)中。
在上述实施方案中,导电性平版印刷聚合物被用来代替如形成导电图案的常规方法中所用的化学镀铜工艺和光刻胶工艺。在一些其他实施方案中,导电性平版印刷聚合物被用来代替如形成导电图案的常规方法中所用的化学镀铜、光刻胶以及电解镀铜。图3A-3C示意了这样的实施方案。在这些实施方案中,导电性平版印刷聚合物膜首先在基材表面上形成。导电性平版印刷聚合物膜然后被掩蔽、曝光和显影以形成导电图案。应使导电性平版印刷聚合物膜形成得足够厚并具有足够的导电性,以便不必要进行电解镀。
在图3A中,具有开口340作为通路或通孔的绝缘层350在核心基材300的表面(如本文中所示,顶面和底面中的每一个)上形成。基材300可为任何期望的基材如有机材料、陶瓷、玻璃或半导体材料(如硅、含硅材料、绝缘材料上的硅、硅锗材料)。基材300可包括在其上或其中形成的微电子结构如晶体管或集成电路(未示出)。基材300也包括导电部件302。导电部件302可在基材300的顶面、侧面和底面上形成。导电部件302可为已用本领域内熟知的方法在基材300中形成的器件(如晶体管或集成电路)(未示出)的导电接点或金属化层。所述导电接点可由铜、钛、铝、铬或其他适合的导电性材料制成。
接着,在绝缘层350的表面上形成导电性照相平版印刷膜330。在一个实施方案中,导电性照相平版印刷膜330在绝缘层350的顶面和底面两个面上形成。在一个实施方案中,导电性照相平版印刷膜330从油墨溶液形成,其中,导电性照相平版印刷材料被印或敷在绝缘层350的表面上。然后让印上的导电性照相平版印刷材料干燥或固化以形成导电性照相平版印刷膜330。或者,导电性照相平版印刷膜330可通过将干膜层压到绝缘层350的表面上形成。可施加压力和温度以使导电性照相平版印刷膜330流进通路或通孔340中而与导电部件302接触。在形成于绝缘层上后,导电性照相平版印刷材料可填进开口、通孔、沟槽或缝隙中,如图3A-3C所示。
接着,用掩模362按膜330的期望电路图案用本领域内熟知的与掩蔽光刻胶膜类似的方法掩蔽导电性照相平版印刷膜330(图3B)。然后,将导电性照相平版印刷膜330暴露在例如约50-150mJ/cm2的光360中, 如在暴露光刻胶膜时常做的那样。然后,经曝光的导电性照相平版印刷膜330经显影以产生期望的导电性平版印刷膜图案。膜330一经显影,导电性平版印刷膜的未掩蔽部分330即被除去,留下导电性平版印刷膜被掩蔽的部分332,如图3C中所示。显影液可为本领域内熟知的用来使光刻胶膜显影的常规显影液,例如钠的0.7-1.0%溶液。
导电性照相平版印刷膜332可具有与如前所述形成导电通路的常规工艺中所用典型的化学镀膜加典型的电镀膜的厚度类似的厚度。在一个实施方案中,导电性照相平版印刷膜332的厚度介于约10μm-约100μm之间。
要形成多层半导体器件的其他导电图案层,图3A-3C中所示的工艺可根据需要重复多次。例如,如图3D中所示,可在基材300顶上和导电图案332上形成另一个绝缘层347。通路/通孔349穿过绝缘层347产生以便与导电图案332或基材300上的其他导电部件建立连接。然后,所述形成导电性照相平版印刷膜的工艺可同样重复进行以产生另外的期望的电路图案。
在一个实施方案中,上面所示的导电部件302也可从导电性平版印刷聚合物制得。在本实施方案中,导电性平版印刷聚合物(如前述那些)(以油墨或干膜形式)被形成、淀积或层压到基材300上以形成导电性平版印刷聚合物膜。导电性平版印刷聚合物膜然后以与前述类似的方式被掩蔽、曝光和显影以为导电部件302形成期望的电路图案。在导电性平版印刷膜的图案形成后,再在基材300上形成导电元件302。在导电性平版印刷聚合物以膜的形式敷设的实施方案中,可施加压力和温度以使导电性平版印刷聚合物膜流进基材300上的缝隙、开口、沟槽或通路(未示出)中。
本发明的实施方案可被用来缩短因化学镀和电解镀工艺而致的较长的半导体器件制作工艺时间。此外,所述实施方案可减少涂覆和蚀刻工艺通常所用的制作中间步骤中所用的材料(如光刻胶材料和化学镀材料)。
尽管参照若干实施方案对本发明进行了描述,但本领域的普通技术人员将认识本发明不限于所述实施方案。本发明的方法和装置可在附随的权利要求的精神和范围内调整和改变。因此描述应看作是示例性的而非限制性的。
上文公开了示例性实施方案,可在不偏离附随的权利要求所限定的本发明的精神和范围的情况下对公开的实施方案予以调整和改变。
Claims (19)
1.一种制作器件的方法,所述方法包括:
在基材上电介质层表面上淀积导电性照相平版印刷聚合物膜;和
用平版印刷工艺将导电性照相平版印刷聚合物膜图案化以产生电路图案,所述平板印刷工艺包括将所述导电性照相平版印刷聚合物膜掩蔽、曝光并显影以去除所述导电性照相平版印刷聚合物膜的未掩蔽部分;
使用电解镀工艺在所述电路图案上形成导电膜,其中所述电路图案包括所述导电性照相平版印刷聚合物膜的被掩蔽部分。
2.权利要求1的方法,所述方法还包括:
在淀积导电性照相平版印刷聚合物膜之前在基材上形成有一个或多个通路的所述电介质层,其中所述电介质层使基材与导电性照相平版印刷聚合物膜绝缘,且所述导电性照相平版印刷聚合物膜形成在电介质层上。
3.权利要求2的方法,其中所述基材还包括一个或多个含形成于其中的导电元件的部件,且所述通路能实现导电元件的电互连。
4.权利要求3的方法,所述方法还包括:
将导电性照相平版印刷聚合物膜与导电元件互连。
5.权利要求3的方法,所述方法还包括:
在基材的另一面上淀积第二导电性照相平版印刷聚合物膜;和
用平版印刷工艺使第二导电性照相平版印刷聚合物膜图案化以产生第二电路图案。
6.权利要求5的方法,所述方法还包括:
在淀积第二导电性照相平版印刷聚合物膜之前在基材的所述另一面上形成有一个或多个通路的第二电介质层,其中所述第二电介质层使基材的所述另一面与第二导电性照相平版印刷聚合物膜绝缘,且所述第二导电性照相平版印刷聚合物膜形成在所述第二电介质层上。
7.权利要求6的方法,其中第二电介质层的通路能实现导电元件的电互连。
8.权利要求7的方法,所述方法还包括:
将第二导电性照相平版印刷聚合物膜与导电元件互连。
9.权利要求8的方法,所述方法还包括:
使用电解镀工艺在第二照相平版印刷聚合物膜的电路图案上形成另外的导电膜;和
通过通路将另外的导电膜与导电元件互连。
10.一种电子器件,所述器件包含:
基材;
形成于基材上的电介质层;
形成于电介质层上的导电性照相平版印刷聚合物膜,其中所述导电性照相平版印刷聚合物膜用平版印刷工艺按电路图案形成图案;和
使用电解镀工艺形成在所述电路图案上的导电膜。
11.权利要求10的电子器件,其中所述基材包括一个或多个含导电元件于其中的部件,且所述电介质层有穿过其中的通路,所述通路能实现导电元件的电互连,且导电性照相平版印刷聚合物膜通过通路与导电元件电互连。
12.权利要求11的电子器件,其中所述导电膜通过通路与导电元件互连。
13.权利要求10的电子器件,其中所述导电性平版印刷聚合物膜包括本征导电聚合物。
14. 权利要求10的电子器件,其中所述基材包括印刷电路板。
15. 权利要求10的电子器件,其中所述导电性照相平版聚合物膜包含金属。
16. 权利要求10的电子器件,其中所述导电性照相平版聚合物膜包含金属粉末。
17. 权利要求10的电子器件,其中所述导电性照相平版聚合物膜包含纳米尺寸的金属粉末。
18. 权利要求10的电子器件,其中所述导电性照相平版聚合物膜包含石墨。
19. 权利要求10的电子器件,其中所述导电性照相平版聚合物膜包含炭黑粉末。
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US10/938,161 | 2004-09-09 | ||
US10/938,161 US7279268B2 (en) | 2004-09-09 | 2004-09-09 | Conductive lithographic polymer and method of making devices using same |
PCT/US2005/030407 WO2006031411A2 (en) | 2004-09-09 | 2005-08-26 | A conductive lithographic polymer mixture and method of making devices using same |
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JP (1) | JP4619411B2 (zh) |
KR (2) | KR101035156B1 (zh) |
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DE (1) | DE112005002156T5 (zh) |
HK (1) | HK1120870A1 (zh) |
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JP4940983B2 (ja) * | 2007-02-13 | 2012-05-30 | 富士通株式会社 | 引出配線の形成方法及び走査型プローブ顕微鏡用試料の作成方法 |
JP5047862B2 (ja) * | 2008-03-31 | 2012-10-10 | 三菱自動車工業株式会社 | パネル装置 |
KR101138799B1 (ko) * | 2009-08-20 | 2012-04-24 | 제일모직주식회사 | 이방 도전성 필름용 조성물 |
CN102627823B (zh) * | 2011-08-10 | 2015-10-21 | 京东方科技集团股份有限公司 | 透明导电树脂、彩膜基板及制作方法、液晶显示装置 |
JP6163745B2 (ja) * | 2012-02-03 | 2017-07-19 | 株式会社リコー | アミン化合物、及び電子写真感光体、該電子写真感光体を用いた画像形成方法、画像形成装置、画像形成用プロセスカートリッジ |
KR101741358B1 (ko) | 2016-02-23 | 2017-05-29 | 아주대학교산학협력단 | 광활성-도전성 고분자 재료, 광활성 도전막 및 이를 포함하는 광전자 소자 |
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- 2005-08-26 JP JP2007531196A patent/JP4619411B2/ja not_active Expired - Fee Related
- 2005-08-26 WO PCT/US2005/030407 patent/WO2006031411A2/en active Application Filing
- 2005-08-26 DE DE112005002156T patent/DE112005002156T5/de not_active Withdrawn
- 2005-08-26 CN CN200580029888.0A patent/CN101189553B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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JP4619411B2 (ja) | 2011-01-26 |
US7700246B2 (en) | 2010-04-20 |
CN101189553A (zh) | 2008-05-28 |
TW200622492A (en) | 2006-07-01 |
TWI333128B (en) | 2010-11-11 |
KR20080052695A (ko) | 2008-06-11 |
KR20070047822A (ko) | 2007-05-07 |
KR101007561B1 (ko) | 2011-01-14 |
WO2006031411A2 (en) | 2006-03-23 |
JP2008512721A (ja) | 2008-04-24 |
WO2006031411A3 (en) | 2007-12-21 |
US20060051707A1 (en) | 2006-03-09 |
US7279268B2 (en) | 2007-10-09 |
HK1120870A1 (zh) | 2009-04-09 |
US20070269743A1 (en) | 2007-11-22 |
DE112005002156T5 (de) | 2007-06-28 |
KR101035156B1 (ko) | 2011-05-17 |
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