CN101185166A - 场效应晶体管布置对称的像素 - Google Patents

场效应晶体管布置对称的像素 Download PDF

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CN101185166A
CN101185166A CNA2006800191229A CN200680019122A CN101185166A CN 101185166 A CN101185166 A CN 101185166A CN A2006800191229 A CNA2006800191229 A CN A2006800191229A CN 200680019122 A CN200680019122 A CN 200680019122A CN 101185166 A CN101185166 A CN 101185166A
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R·M·圭达什
T·J·肯尼
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Eastman Kodak Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements

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Abstract

一种图像传感器，包括安排在阵列中的多个光电探测器(20；30)；和多个晶体管(60；90)，在功能上被所述光电探测器共享，其中每个光电探测器到相邻晶体管的距离基本上相同。

Description

场效应晶体管布置对称的像素
技术领域
本发明大体上涉及具有共享放大器的多个光电二极管的CMOS图像传感器的领域，更具体地，涉及这种CMOS图像传感器，所述CMOS图像传感器的场效应晶体管(FET)被安置在离所述图像传感器的“单位晶格(unit cell)”中每个光电二极管的距离基本上相同的位置。
背景技术
参照图1，示出共享放大器-源极跟随器晶体管SF的两个光电二极管的示意图。光电二极管经由它们各自的传输门TG1和TG2将它们的电荷传输到它们各自的浮动扩散FD1和FD2。
参照图2，示出具有由放大器-源极跟随器SF所共享的四个光电二极管PD1、PD2、PD3和PD4的典型现有技术图像传感器的示意图。类似于图1，图2的操作包括光电二极管PD1、PD2、PD3和PD4经由它们各自的传输门TG1、TG2、TG3和TG4将它们各自的电荷传输到它们各自的浮动扩散FD1、FD2、FD3和FD4。
参照图3和4，其中分别示出图1和图2的俯视图。图像传感器包括多个光电二极管和它们的相关联的场效应晶体管(FET)，所述场效应晶体管被不对称地布置在图像传感器单位晶格内并且离光电二极管的距离不同。FET用于向图像传感器提供各种功能，例如放大、复位和行选择。图1和2的设计最大化了光占空系数(optical fill factor)，但是还会具有因每个光电二极管周围区域的光和静电的不对称性而引起的光增益固定模式噪声。
虽然现有技术图像传感器是符合要求的，但是它还有缺点，例如光增益固定模式噪声。因此，就存在着降低这样的光增益固定噪声模式且同时最大化光占空系数的需求。
发明内容
本发明致力于克服上述问题中的一个或多个。总体上，根据本发明的一个方面，本发明在于一种图像传感器，包括：安排在阵列中的多个光电探测器；和多个FET，在功能上被所述光电探测器共享，其中每个光电探测器到相邻FET的距离基本上相同。
结合如下描述和附图，本发明的上述和其它目标将会更加明显，在附图中可能的地方，都已经使用了相同的附图标记来指示在附图所共用的相同元件。
本发明的有益效果
本发明提供如下优势：降低共享的放大器像素中的增益固定噪声。
附图说明
图1是图示共享放大器的两个光电二极管以及FET的位置的现有技术图像传感器的示意图；
图2是图示共享放大器的四个光电二极管以及FET的位置的现有技术图像传感器的示意图；
图3是图1的俯视图；
图4是图2的俯视图；
图5是图示共享放大器的两个光电二极管的本发明的图像传感器的示意图；
图6是图示共享放大器的四个光电二极管的本发明的图像传感器的示意图；
图7是图示FET的位置的图5的俯视图；
图8是图示FET的位置的图6的俯视图；
图9是本发明的具有图6布局的数字照相机的侧视图。
具体实施方式
在如下描述中，本发明将在优选实施例中被描述为软件程序。本领域技术人员将会很容易地认识到，这种软件的等同物还可以采用硬件来构造。
参照图5，其中示出了本发明的图像传感器10的示意图，所述图像传感器10具有两个光电探测器-优选地光电二极管(PD1和PD2)20和30，它们均响应于入射光而聚集电荷。两个传输门(TG1和TG2)40和50分别被电连接到每个光电二极管20和30，并且用脉冲顺序地向传输门40和50输送电压，用以将电荷从光电二极管传输到其相关联的浮动扩散，所述浮动扩散将电荷转换成电压信号。在将电荷从光电二极管20和30传输到浮动扩散70和80之前，复位晶体管(RG)60将每个浮动扩散(n+)70和80的电压设置到基准电压。
源极跟随器晶体管(SF)90或放大器被每个浮动扩散70和80共享，以便对输出到列总线(column bus)110的电压信号进行放大。行选择信号线(RSEL)100选择行，用以输出到列总线110。出于清楚考虑，应该注意到，在不同时间顺序地向传输门40和50供以脉冲，以便在传输来自一个光电二极管30的电荷之前，将来自另一个光电二极管20的电荷传输到其相关联的浮动扩散70以供经由放大器90输出到列总线110，以便为每个光电二极管产生不同的信号。
参照图6，其中示出具有共享放大器90的四个光电二极管(另外的光电二极管25和35)的图5的替代性实施例。该实施例与图5的实施例在功能上相同，其中在时间上顺序地向四个传输门40、45、50和55(注意另外的传输门45和55)供以脉冲，以便把电荷传输到各自的浮动扩散70、75、80和85(注意另外的浮动扩散75和85)。浮动扩散70、75、80和85将电荷转换成电压，并且所述电压被源极跟随器晶体管90放大以供输出到列总线110。
参照图7，其中示出了具有安排在2×2阵列中的多个光电二极管(PD)的图5的俯视图。此组四个光电二极管和相关联的FET构成像素阵列单位晶格。为了清楚地理解，仅示出四个光电二极管，不过本发明的典型图像传感器10包括各种尺寸的兆像素(megapixel)图像传感器，每个像素都具有光电二极管。还应该注意到，在此所提到的场效应晶体管(FET)是复位晶体管60和源极跟随器晶体管90。这些FET被设计在且物理上被安置在单位晶格内，用以使它们与所述四个光电探测器中每个的接近度对称。另外，这些FET被布置成使得施加到每个晶体管的电压优选地在所述光电探测器中每个的附近就静电位而言是相同或基本上相同的。另外，应该注意到，这些FET在功能上被光电探测器(PD)共享。
在此描述的本发明提供了降低共享的放大器像素中的光增益固定模式噪声的方法。因为FET在像素中的布置产生p-n结，并且这些FET被偏置到正电位，所以FET结能够充当弱的光电探测器并且能够收集光生成的电子。在FET周围没有重p阱的情况下尤其如此。通过以这样的方式布置FET，以使对单位晶格中的每个光电探测器中而言，从FET到光电探测器的共享组或单位晶格中的相邻光电探测器的距离是相同或对称的(或基本上相同或基本上对称)，单位晶格中的所有光电探测器的有效量子效率将会相同或基本相似。图7示出现有技术的设计，其中以这样的方式布置FET，以使单位晶格中的每个光电探测器都具有以物理上相同的方式靠近其放置的FET。
换言之，每个光电探测器之间都具有基本上一致的间距，并且以基本上一致的间距将晶体管布置在光电探测器的周围的区域中。
参照图8，其中示出具有安排在2×4阵列中的多个光电二极管(PD)的图6的俯视图。此组八个光电二极管和相关联的FET构成像素阵列单位晶格。此外，为了清楚理解，也仅示出八个光电二极管，不过本发明的典型图像传感器10包括各种尺寸的兆像素图像传感器，每个像素都具有光电二极管。如上所述，这里的FET指的是复位晶体管60和源极跟随器晶体管90，并且按如上所描述那样进行操作。图8示出本发明的设计，其中以这样的方式布置FET，以使单位晶格中的每个光电探测器(PD)都具有以物理上相同的方式靠近其放置的FET。
参照图9，其中示出数字照相机120的侧视图(所述数字照相机120具有布置于其中的图像传感器10)，用以图示一般消费者所习惯的典型商业实施例。
部件列表
10图像传感器
20光电二极管
25光电二极管
30光电二极管
35光电二极管
40传输门
45传输门
50传输门
55传输门
60复位晶体管
70浮动扩散
75浮动扩散
80浮动扩散
85浮动扩散
90源极跟随器晶体管或放大器
100行选择信号线
110列总线
120数字照相机

Claims (10)

1.一种图像传感器，包括：
(a)安排在阵列中的多个光电探测器；
(b)多个晶体管，在功能上被所述光电探测器共享，其中每个光电探测器到相邻晶体管的距离基本上相同。
2.根据权利要求1所述的图像传感器，其中每个光电探测器到多个在功能上被共享的晶体管的距离基本上相同。
3.根据权利要求1所述的图像传感器，其中施加到每个晶体管的电位基本上相同。
4.根据权利要求2所述的图像传感器，其中施加到每个晶体管的电位基本上相同。
5.根据权利要求1所述的图像传感器，其中每个光电探测器之间具有基本上一致的间距，并且所述晶体管被以基本上一致的间距布置在所述光电探测器周围的区域中。
6.一种数字照相机，包括：
图像传感器，所述图像传感器包括：
(a)安排在阵列中的多个光电探测器；
(b)多个晶体管，在功能上被所述光电探测器共享，其中每个光电探测器到相邻晶体管的距离基本上相同。
7.根据权利要求6所述的数字照相机，其中每个光电探测器到多个在功能上被共享的晶体管的距离基本上相同。
8.根据权利要求6所述的数字照相机，其中施加到每个晶体管的电位基本上相同。
9.根据权利要求7所述的数字照相机，其中施加到每个晶体管的电位基本上相同。
10.根据权利要求6所述的图像传感器，其中每个光电探测器之间具有基本上一致的间距，并且所述晶体管被以基本上一致的间距布置在所述光电探测器周围的区域中。
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US11/432,573 US7342213B2 (en) 2005-06-01 2006-05-11 CMOS APS shared amplifier pixel with symmetrical field effect transistor placement
PCT/US2006/020584 WO2006130516A1 (en) 2005-06-01 2006-05-26 Pixel with symmetrical field effect transistor placement

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TW200703633A (en) 2007-01-16
JP2008546199A (ja) 2008-12-18
US7342213B2 (en) 2008-03-11
KR101320784B1 (ko) 2013-10-22
TWI385793B (zh) 2013-02-11
CN101185166B (zh) 2011-04-27

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