CN101174419B - 带有阻抗调节的电流垂直平面磁致电阻传感器 - Google Patents
带有阻抗调节的电流垂直平面磁致电阻传感器 Download PDFInfo
- Publication number
- CN101174419B CN101174419B CN2007101848338A CN200710184833A CN101174419B CN 101174419 B CN101174419 B CN 101174419B CN 2007101848338 A CN2007101848338 A CN 2007101848338A CN 200710184833 A CN200710184833 A CN 200710184833A CN 101174419 B CN101174419 B CN 101174419B
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- Prior art keywords
- substrate
- capacitance
- shield
- read head
- parasitic capacitance
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 230000003071 parasitic effect Effects 0.000 claims abstract description 29
- 239000004020 conductor Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 230000005291 magnetic effect Effects 0.000 description 21
- 239000010408 film Substances 0.000 description 13
- 230000005415 magnetization Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910019923 CrOx Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/554,469 US7545608B2 (en) | 2006-10-30 | 2006-10-30 | Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with impedance adjustment |
| US11/554,469 | 2006-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101174419A CN101174419A (zh) | 2008-05-07 |
| CN101174419B true CN101174419B (zh) | 2010-06-02 |
Family
ID=39329803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101848338A Expired - Fee Related CN101174419B (zh) | 2006-10-30 | 2007-10-30 | 带有阻抗调节的电流垂直平面磁致电阻传感器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7545608B2 (https=) |
| JP (1) | JP2008112562A (https=) |
| CN (1) | CN101174419B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7706109B2 (en) * | 2005-10-18 | 2010-04-27 | Seagate Technology Llc | Low thermal coefficient of resistivity on-slider tunneling magneto-resistive shunt resistor |
| US7656600B2 (en) * | 2006-08-25 | 2010-02-02 | Seagate Technology Llc | Monitoring transducer potential to detect an operating condition |
| US8040632B2 (en) * | 2007-12-12 | 2011-10-18 | Samsung Electronics Co., Ltd. | Grounding structure of TMR and GMR heads with a flying on-demand heater |
| US8472146B2 (en) | 2010-08-27 | 2013-06-25 | HGST Netherlands B.V. | Current perpendicular magnetoresistive sensor with a dummy shield for capacitance balancing |
| US8824077B2 (en) | 2011-11-29 | 2014-09-02 | HGST Netherlands B.V. | Perpendicular magnetic recording write head with ladder network compensation circuitry on slider body for write current overshoot at write current switching |
| US8531800B1 (en) * | 2012-11-29 | 2013-09-10 | HGST Netherlands B.V. | Magnetic write head having dual parallel capacitors for integrated transmission line compensation |
| JP5766321B1 (ja) * | 2014-03-07 | 2015-08-19 | 三菱電機株式会社 | Tmr磁気センサ、及びその製造方法 |
| US8891189B1 (en) | 2014-03-18 | 2014-11-18 | HGST Netherlands B.V. | Disk drive with filter compensation integrated in sliders for high-bandwidth read sensors |
| US9437251B1 (en) | 2014-12-22 | 2016-09-06 | Western Digital (Fremont), Llc | Apparatus and method having TDMR reader to reader shunts |
| US12222375B2 (en) | 2022-10-31 | 2025-02-11 | Schweitzer Engineering Laboratories, Inc. | Folded current sense shunt resistor |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5539598A (en) * | 1994-12-08 | 1996-07-23 | International Business Machines Corporation | Electrostatic protection for a shielded MR sensor |
| US5761009A (en) * | 1995-06-07 | 1998-06-02 | International Business Machines Corporation | Having parastic shield for electrostatic discharge protection |
| JP3576361B2 (ja) | 1997-09-18 | 2004-10-13 | 富士通株式会社 | 磁気抵抗効果型ヘッド及び磁気記録再生装置 |
| JPH11175931A (ja) | 1997-12-16 | 1999-07-02 | Nec Corp | 磁気抵抗効果型複合ヘッド及び磁気ディスク装置 |
| US6246553B1 (en) * | 1998-12-02 | 2001-06-12 | International Business Machines Corporation | Shielded magnetoresistive head with charge clamp |
| US6400534B1 (en) | 2000-03-21 | 2002-06-04 | International Business Machines Corporation | Resistive shunt ESD and EOS protection for recording heads |
| US6678127B2 (en) * | 2001-01-02 | 2004-01-13 | Hitachi Global Storage Technologies Netherlands B.V. | Device and method of reducing ESD damage in thin film read heads which enables measurement of gap resistances and method of making |
| US6859347B2 (en) | 2001-01-04 | 2005-02-22 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic transducer with electrically conductive shield for reducing electromagnetic interference |
| US7206154B2 (en) * | 2002-09-25 | 2007-04-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Method and apparatus for balanced shield shunts, leads and pads for electrical noise reduction in read heads |
| JP4596753B2 (ja) | 2003-06-26 | 2010-12-15 | 株式会社日立グローバルストレージテクノロジーズ | 磁気ヘッドおよび磁気記録再生装置 |
| JP2005293762A (ja) | 2004-04-02 | 2005-10-20 | Tdk Corp | 複合型薄膜磁気ヘッド |
| US7436633B2 (en) * | 2004-10-15 | 2008-10-14 | Tdk Corporation | Thin-film magnetic head, head gimbal assembly and hard disk system |
| US7392579B2 (en) * | 2005-03-07 | 2008-07-01 | Headway Technologies, Inc. | Method for protecting a slider mounted CPP GMR or TMR read head sensor from noise and ESD damage |
| JP3922303B1 (ja) * | 2005-05-13 | 2007-05-30 | Tdk株式会社 | 複合型薄膜磁気ヘッド、磁気ヘッドアセンブリ及び磁気ディスクドライブ装置 |
| US7375931B2 (en) * | 2005-09-30 | 2008-05-20 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic recording head with ESD shunt trace |
| US7706109B2 (en) * | 2005-10-18 | 2010-04-27 | Seagate Technology Llc | Low thermal coefficient of resistivity on-slider tunneling magneto-resistive shunt resistor |
| US7486476B2 (en) * | 2005-12-14 | 2009-02-03 | International Business Machines Corporation | Magnetic data system having a shield biasing circuit with resistor coupled between the shield and substrate |
-
2006
- 2006-10-30 US US11/554,469 patent/US7545608B2/en not_active Expired - Fee Related
-
2007
- 2007-10-25 JP JP2007277823A patent/JP2008112562A/ja active Pending
- 2007-10-30 CN CN2007101848338A patent/CN101174419B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101174419A (zh) | 2008-05-07 |
| JP2008112562A (ja) | 2008-05-15 |
| US7545608B2 (en) | 2009-06-09 |
| US20080100970A1 (en) | 2008-05-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: HGST NETHERLANDS BV Free format text: FORMER NAME: HITACHI GLOBAL STORAGE TECH |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Amsterdam Patentee after: Hitachi Global Storage Technologies Netherlands B. V. Address before: Amsterdam Patentee before: Hitachi Global Storage Tech |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100602 Termination date: 20151030 |
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| EXPY | Termination of patent right or utility model |