CN101161039A - Metal base circuit board, LED and LED light source unit - Google Patents

Metal base circuit board, LED and LED light source unit Download PDF

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Publication number
CN101161039A
CN101161039A CNA2006800123857A CN200680012385A CN101161039A CN 101161039 A CN101161039 A CN 101161039A CN A2006800123857 A CNA2006800123857 A CN A2006800123857A CN 200680012385 A CN200680012385 A CN 200680012385A CN 101161039 A CN101161039 A CN 101161039A
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China
Prior art keywords
circuit board
metal
base circuit
insulating barrier
led
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Granted
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CNA2006800123857A
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Chinese (zh)
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CN101161039B (en
Inventor
岡島芳彦
八島克憲
高野敬司
岡田拓也
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Denka Co Ltd
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Denki Kagaku Kogyo KK
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Priority claimed from JP2006013289A external-priority patent/JP4459910B2/en
Priority claimed from JP2006030024A external-priority patent/JP4484830B2/en
Priority claimed from JP2006087688A external-priority patent/JP4913459B2/en
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority claimed from PCT/JP2006/308221 external-priority patent/WO2006112478A1/en
Publication of CN101161039A publication Critical patent/CN101161039A/en
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Publication of CN101161039B publication Critical patent/CN101161039B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15159—Side view

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  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

A metal base circuit board capable of being not only installed to a flat portion but closely attached to a side surface or a bottom surface of a case or to a curved surface, and being excellent in heat dissipation capacity, electric insulation capacity and flexibility and a production method thereof, and a hybrid integrated circuit, an LED module and a bright, ultra-long-life LED light source unit using it. A metal base circuit board which is a circuit board comprising insulating layers and conductive circuits or metal foils that are laminated alternately, characterized in that the thickness of the conductive circuit or a metal foil is 5[mu]m through 450[mu]m, the insulating layer consists of a hardening material of a resin composition containing inorganic filler and thermosetting resin, and the thickness of the insulating layer is 9[mu]m through 300[mu]m; and a hybrid integrated circuit using it. Or, a metal base circuit board comprising a layer having a coverlay and magnetic loss or a layer having dielectric loss. Further, a metal base circuit board comprising at least one light emitting diode (LED) mounted on the above conductive circuit.

Description

Metal-base circuit board, LED and led light source unit
Technical field
The present invention relates to guarantee the good bent metal-base circuit board of thermal diffusivity and electrical insulating property and electromagnetic wave shielding performance, use the light-emitting diode (LED:Light Emitting Diode) and the led light source unit of this substrate, particularly relate to the led light source unit of the backlight that is suitable for liquid crystal indicator.
Background technology
In recent years, the circuit substrate that mounting semiconductor is used is required miniaturization, high-density installationization and the high performance of substrate, also because miniaturization, the high powerization of semiconductor element etc., produced the problem of in narrow space, how to distribute the heat that sends from semiconductor element etc.Particularly in field,, adopt on metallic plate across insulating barrier jointing metal paper tinsel all the time and form the metal-base circuit board of circuit because thermal diffusivity is good based on field of power supplies and automotive electronics decoration field.
But the basal substrate thickness of metal-base circuit board is generally 1.0mm～3.0mm, therefore is difficult to slimming, the position is set is restricted.In addition, owing to be on metallic plate, to be situated between structure, exist to be easy to generate noise, to cause the problem of the misoperation of module easily with thin insulating barrier.
In order to provide noise shielding and thermal diffusivity, for example known whole or a part of Metal Substrate multilager base plate (with reference to patent documentation 1) that gets by the stacked upper strata circuit substrate of bonding agent that has on metal-base circuit board with circuit.
In such structure, owing to there is the bond layer of poor thermal conductivity between metallic plate and top substrate layer, therefore carrying under the situation of high-power components on the circuit pattern of upper strata, exist thermal diffusivity insufficient, the temperature of element rises, and then the problem of misoperation takes place.
In order to solve the problem of above-mentioned thermal diffusivity, known have a metal-base circuit board (with reference to patent documentation 2) with high thermal conductivity insulating layer.
But, because hickness of metal plate, can't attach along the cassette shapes such as box of bending and be provided with, so can't give full play to the thermal diffusivity of insulating barrier, and owing to can't realize crooked be provided with etc., therefore being provided with needs big space, has the problem that module can't miniaturization.
On the other hand, insulating barrier that is formed by the epoxy resin of having filled inorganic filler etc. and the metal-base circuit board that forms circuit pattern thereon are set because thermal diffusivity and electrical insulating property are good on metallic plate, are used as the electronic equipment usefulness circuit substrate (with reference to patent documentation 3) of communication equipment that high heat generation electronic unit is installed and automobile etc.
If metal-base circuit board can at random bend, the restriction that then is arranged at the installation site of flat usually is eased, can make side or bottom surface or staggered floor or the curved surface etc. of its driving fit by bonding, joint and screw etc., can realize installing the miniaturization of the electronic equipment of high heat generation electronic unit in box body.In addition,, then can insert or be fixed at interval narrow space, therefore can realize installing the slimming of the electronic equipment of high heat generation electronic unit if can make the attenuation of metal-base circuit board own.
Proposition has following technical scheme: by the method that metal-base circuit board is heated under the temperature more than 120 ℃, promptly under the state that metal-base circuit board is heated to the high temperature more than 10 ℃ of vitrification point (Tg), carry out bending machining or extrusion process, will have metal-base circuit board and the box body or the electronic circuit shell dual-purpose (with reference to patent documentation 4) of uneven part than insulating barrier.
In addition, the LED source unit that light-emitting diode is used as light source is used to various fields, but for example the back light of liquid crystal indicator uses the small fluorescent pipe that is known as CFL (cold-cathode tube) usually.
The light source of aforementioned CFL adopts encloses Hg (mercury) in discharge tube, the ultraviolet ray of emitting from the mercury that is excited by discharge is mapped to the fluorophor of the tube wall of CFL, is converted into the structure of visible light.Therefore, consider the environment aspect recently, require to use the alternative source of light that does not adopt harmful mercury.
As new light source, though propose to use light-emitting diode (following " LED " slightly), but there is directive property in LED to light, particularly carry out the type that face installs and obtain light from a direction for flexible base, board etc., therefore the structure with in the past use CFL is different, the loss of light is also few, therefore is used to the backlight (with reference to patent documentation 5) of flat light source mode.
Follow low price and luminous efficiency to improve and environmental limitations as the backlight of light source LED, begin to popularize as the backlight of liquid crystal indicator.Simultaneously, along with the high brightnessization of liquid crystal indicator and the maximization of viewing area, improve in order to make luminous quantity, LED constantly increases to the lift-launch number of flexible base, board etc., and power output is increasing.
Yet the luminous efficiency of the light source of LED is low, so the luminous time input electric power of LED major part is converted into heat and emits.The LED energising just produces heat, and owing to the heat that produces forms high temperature, if its degree is serious, then LED is destroyed.In the backlight of LED as light source, heat accumulation takes place in LED and the substrate that it is installed in this, along with the temperature rising of LED, causes the luminous efficiency of LED itself to descend.And if increase the installation number of LED in order to increase brightness backlight or increase input electric power, then its caloric value increases, so importantly remove this heat.
In order to reduce the heat accumulation of LED installation base plate, the temperature that reduces led chip rises, proposed following technical scheme: the led chip installed surface at the LED installation base plate forms the installation metal film that led chip is installed, supply with the metal driving distribution of drive current to led chip, the metal film pattern that is used to dispel the heat, form the heat transmission metal film at the face relative with the led chip installed surface, form the metal throuth hole of the heat transmission metal film of the metal pattern that connects an interarea side and another interarea side at the thickness direction of led chip installation base plate, will reject heat to the metal film (with reference to patent documentation 6) at the back side by metal throuth hole from the heating of LED.
But, under the little situation of the shape of mounted LEDs, the area that metal film exist to be installed is restricted, is formed at the problem that the quantity of the metal throuth hole under the LED is restricted, can't be under the situation of formation metal film pattern on the installation base plate because of the restriction of substrate area, existence can't reject heat to problems such as substrate back with the heat that produces among the LED efficiently.
In addition, if use the metal-base circuit board of the Metal Substrate base plate that adopts thick 2mm to replace flexible base, board, then can metal throuth hole be set and obtain good thermal diffusivity, but there is the substrate thickness thickening, and compare the die-cut size that needs to increase self-electrode and Wiring pattern etc., the problem that substrate area increases with flexible base, board.In addition, owing to except that LED carries part, can't at random bend, so the formation position of input terminal is restricted.
In addition, similarly reduce the structure of the die-cut size of self-electrode and Wiring pattern etc. with flexible base, board if adopt the metallic substrates thickness reduce the aforementioned metal base circuit board, then metal-base circuit board has bending just to form the crack at insulating barrier slightly, can't use.Exist LED to carry the problem that part can't at random bend equally.
In addition, owing to can at room temperature bend use, has bending process, therefore developed the metal-base circuit board that the metal forming about employing 9～40 μ m that conductor circuit forms is set across insulating barrier, described insulating barrier adopts the bending of having filled under thermal conductivity filler, room temperature insulating barrier good, that have thermal diffusivity to substitute in the past polyimide insulating barrier.
Yet if conductor circuit bends more than 90 ° with the very little radius of curvature below the 0.5mm, the partial insulating layer that is bent may the crack occur and can't use.Therefore, if carry out reinforcement by the coating that on polyimide film, has formed the epoxy cement layer, the insulating barrier that then can prevent bending part produces the crack, but therefore the decline of bending property exist the very little problem of radius of curvature bending more than 90 ° that is difficult to below the 0.5mm.
In addition, there is the problem that is easy to generate noise and causes the misoperation of module easily in the circuit substrate that mounting semiconductor is used or carried under the situation of miniature precision motor.
Patent documentation 1: Japanese patent laid-open 05-037169 communique
Patent documentation 2: Japanese patent laid-open 09-139580 communique
Patent documentation 3: the Japan Patent spy opens clear 62-271442 communique
Patent documentation 4: the Japan Patent spy opens the 2001-160664 communique
Patent documentation 5: the Japan Patent spy opens the 2005-293925 communique
Patent documentation 6: the Japan Patent spy opens the 2005-283852 communique
The announcement of invention
The present invention will solve aforementioned existing in prior technology problem as problem, provide thermal diffusivity good and have good bending, electromagnetic wave shielding performance and insulating properties also good metal base circuit board and method for making thereof, and use the hybrid integrated circuit of this substrate, with the led module of coating reinforcement, the long-life led light source unit that damage is prevented and brightness is high of LED.
That is, major technique of the present invention thes contents are as follows.
(1) metal-base circuit board, it is the circuit substrate that intersecting has insulating barrier and conductor circuit or metal forming, it is characterized in that, the thickness of conductor circuit or metal forming is 5 μ m～450 μ m, insulating barrier is formed by the firming body of the resin combination that contains inorganic filler and heat-curing resin, and the thickness of aforementioned dielectric layer is 9 μ m～300 μ m.
(2) as (1) described metal-base circuit board, wherein, at least 1 of through hole who is used for electric connecting conductor circuit or metal forming is at 0.0078mm 2More than.
(3) as (1) or (2) described metal-base circuit board, wherein, the thermal conductivity of insulating barrier is 1～4W/mK.
(4) as each the described metal-base circuit board in (1)～(3), wherein, the vitrification point of insulating barrier is 0～40 ℃.
(5) as each the described metal-base circuit board in (1)～(4), wherein, insulating barrier is the firming body that contains the resin combination that 25～60 volume % heat-curing resins and remainder be made of the inorganic filler of Na ion concentration below 500ppm, and described inorganic filler is made of the spherical coarse grain of average grain diameter 5～40 μ m below the maximum particle diameter 75 μ m and the spheroidal particle of average grain diameter 0.3～3.0 μ m.
(6) as each the described metal-base circuit board in (1)～(5), wherein, heat-curing resin contains through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type.
(7) as (6) described metal-base circuit board, wherein, heat-curing resin contains the epoxy resin of the straight chain shape of epoxide equivalent 800～4000.
(8) as (6) or (7) described metal-base circuit board, wherein, heat-curing resin contains the polyoxyalkylene polyamines as curing agent.
(9) as each the described metal-base circuit board in (6)～(8), wherein, the chloride ion concentration in the heat-curing resin is below 500ppm.
(10) as each the described metal-base circuit board in (1)～(9), wherein, at an arbitrary position with the bending of the radius of curvature of 1～5mm more than 90 ° the time, the proof voltage of each interlayer of conductor circuit or metal forming is more than 1.0kV with this circuit substrate.
(11) as each the described metal-base circuit board in (1)～(10), wherein, on metal forming, conductor circuit is set across insulating barrier, the coating that thickness is set again is 5 μ m～25 μ m forms, and at least a portion of coating is removed and the slit-shaped that forms is formed in the part that aforementioned conductor circuit is not set.
(12) as (11) described metal-base circuit board, wherein, the length that aforementioned slit is processed to respect to bending part is 50%～95%.
(13) as (11) or (12) described metal-base circuit board, wherein, the thickness of aforementioned coating is 5 μ m～25 μ m.
(14) as each the described metal-base circuit board in (11)～(13), wherein, in the bending of aforementioned slit portion.
(15) as each the described metal-base circuit board in (11)～(14), wherein, surface of insulating layer bends more than 90 ° with the radius of curvature of 0.1～0.5mm.
(16), wherein, on the surface of coating, be laminated with layer with magnetic loss or layer with dielectric loss as each the described metal-base circuit board in (11)～(15).
(17) as each the described metal-base circuit board in (11)～(16), wherein, layer with magnetic loss is formed at magnetic material more than 2 and organic binding material by aspect ratio, the content of aforementioned magnetic material is 30～70 volume %, and this thickness with layer of magnetic loss is 3 μ m～50 μ m.
(18) as each the described metal-base circuit board in (11)～(16), wherein, the layer with dielectric loss is 20～110m by specific area 2The carbon dust of/g and organic binding material form, and the content of aforementioned carbon dust is 5～60 volume %, and this thickness with layer of magnetic loss is 3 μ m～50 μ m.
(19) hybrid integrated circuit is characterized in that, uses each the described metal-base circuit board in (1)～(10).
(20) LED is characterized in that, is electrically connected to few 1 LED on each the described metal-base circuit board in (11)～(18) and forms.
(21) led light source unit, it is characterized in that, each described metal-base circuit board in (1)～(18) is disposed at box surface by adhesive tape, and forms at the light-emitting diode that carries more than 1 on the conductor circuit of aforementioned metal base circuit board.
(22) as the described led light source of claim (21) unit, wherein, the thermal conductivity of adhesive tape is 1～2W/mK, and thickness is 50 μ m～150 μ m.
(23) as claim (21) or (22) described led light source unit, wherein, adhesive tape contains the macromolecule of acrylic acid and/or methacrylic acid.
(24) as each the described led light source unit in claim (21)～(23), wherein, adhesive tape contains 40～80 volume % thermal conductivity electric insulation agent.
(25) as each the described led light source unit in claim (21)～(24), wherein, the maximum particle diameter of thermal conductivity electric insulation agent is below 45 μ m, and average grain diameter is 0.5～30 μ m.
Metal-base circuit board of the present invention has electromagnetic wave shielding performance, thermal diffusivity, electrical insulating property and at room temperature bent, therefore not only can be arranged at flat portions, can also make side or bottom surface or staggered floor or the curved surface etc. of its driving fit in box body.In addition, because can bending at room temperature easily under the state that electric components such as the semiconductor element that needs heat radiation or impedance chip have been installed, so the miniaturization or the slimming of electronic equipment of high heat generation electronic unit that can realize very difficult in the past installation.
In addition, because the heat that sends from led light source can be rejected heat to the substrate back side, be dispersed into the outside by the thermal conductivity adhesive tape, so can reduce the heat accumulation of LED installation base plate, the temperature that reduces LED rises.Therefore, the luminous efficiency that can suppress LED descends, and prevents the damage of LED, and long led light source unit of brightness height and life-span is provided.
The simple declaration of accompanying drawing
Fig. 1-1 is the schematic diagram of an example of the hybrid integrated circuit of use metal-base circuit board of the present invention.
Fig. 2-1 is the plane graph of an example of metal-base circuit board of the present invention.
Fig. 2-2 is the plane graph of an example of metal-base circuit board of the present invention (having disposed coating on the surface of Fig. 2-1).
Fig. 2-3 is the plane graph of an example of metal-base circuit board of the present invention (having disposed layer with magnetic loss or the layer with dielectric loss on the surface of Fig. 2-2).
Fig. 2-4 is the plane graph of an example of metal-base circuit board of the present invention (having disposed thermal component on the surface of Fig. 2-3).
Fig. 2-5 is the sectional view of another metal-base circuit board of the present invention.
Fig. 2-6 is the plane graph of another metal-base circuit board of the present invention.
Fig. 2-7 is the plane graph of another metal-base circuit board of the present invention.
Fig. 3-1 is the sectional view of an example of led light source of the present invention unit.
The explanation of symbol
1: metal forming, 2: insulating barrier, 3: conductor circuit, 4: radiator, 5: output is used semiconductor, 6: the control semiconductor, 7: closing line, 8: chip part, 9: solder portion, 10: thermal conductive adhesive, 11: have the box body of thermal diffusivity, 21: metal forming, 22: insulating barrier, 23: conductor circuit, 24: electrode, 25: slit portion, 26: coating, 26a: epoxy cement layer, 27: component mounting portion, 28: input terminal, 29a: layer with magnetic loss, 29b: have the layer of dielectric loss, 210: heat generating components (LED), 211: crooked place, 212: box body, 213: heat conductivity adhesive tape, 31: metal forming, 32: insulating barrier, 33: conductor circuit, 34: input circuit (wiring lead), 35: solder portion, 36:LED, 37: thermal conductivity adhesive tape, 38: box body.
The best mode that carries out an invention
The preferred configuration of metal-base circuit board of the present invention, hybrid integrated circuit, led module, led light source unit is as follows.
(1-1) metal-base circuit board, it is the circuit substrate that conductor circuit is set across insulating barrier on metal forming, wherein, the thickness of aforementioned metal paper tinsel is 5 μ m～300 μ m, the thickness that contains the aforementioned dielectric layer of inorganic filler and heat-curing resin is 80 μ m～200 μ m, and the thickness of aforementioned conductor circuit is 9 μ m～140 μ m.
(1-2) as (1-1) described metal-base circuit board, wherein, heat-curing resin contains through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type.
(1-3) as (1-2) described metal-base circuit board, wherein, heat-curing resin contains the high molecular expoxy resin of the straight chain shape of epoxide equivalent 800～4000.
(1-4) as each the described metal-base circuit board in (1-1)～(1-3), wherein, the chloride ion concentration in the heat-curing resin is below 500ppm.
(1-5) as each the described metal-base circuit board in (1-1)～(1-4), wherein, the vitrification point of insulating barrier is 0～40 ℃.
(1-6) as each the described metal-base circuit board in (1-1)～(1-5), wherein, insulating barrier contains 25～50 volume % heat-curing resins, the inorganic filler of Na ion concentration below 500ppm that remainder constitutes for the spheroidal particle by the spherical coarse grain of average grain diameter 10～40 μ m below the maximum particle diameter 75 μ m and average grain diameter 0.4～1.2 μ m.
(1-7) as each the described metal-base circuit board in (1-1)～(1-6), wherein, to the conductor circuit side or with the bending of the opposition side of conductor circuit.
(1-8) as each the described metal-base circuit board in (1-1)～(1-6), wherein, with the radius of curvature of 1～5mm to the conductor circuit side or with the opposition side bending of conductor circuit more than 90 °.
(1-9) as each the described metal-base circuit board in (1-1)～(1-6), wherein, the thermal conductivity of insulating barrier is 1～4W/mK, and under the state of radius of curvature bending more than 90 ° with 1～5mm, the proof voltage between conductor circuit and the metal forming is more than 1.5kV.
(1-10) manufacture method of each the described metal-base circuit board in (1-7)～(1-9) is characterized in that, at room temperature bending.
(1-11) hybrid integrated circuit of each the described metal-base circuit board in the use (1-1)～(1-9).
(2-1) circuit substrate, it is the circuit substrate that intersecting has insulating barrier and conductor circuit or metal forming, it is characterized in that, the thickness of conductor circuit or metal forming is 5 μ m～450 μ m, insulating barrier is formed by the firming body of the resin combination that contains inorganic filler and heat-curing resin, and the thickness of aforementioned dielectric layer is 9 μ m～300 μ m.
(2-2) as (2-1) described circuit substrate, wherein, at least 1 of through hole who is used for electric connecting conductor circuit or metal forming is at 0.0078mm 2More than.
(2-3) as (2-1) or (2-2) described circuit substrate, wherein, the thermal conductivity of insulating barrier is 1～4W/mK.
(2-4) as each the described circuit substrate in (2-1)～(2-3), wherein, the vitrification point of insulating barrier is 0～40 ℃.
(2-5) as each the described circuit substrate in (2-1)～(2-4), wherein, insulating barrier is the firming body that contains the resin combination that 25～60 volume % heat-curing resins and remainder be made of inorganic filler, and described inorganic filler is made of the spherical coarse grain of average grain diameter 5～40 μ m below the maximum particle diameter 75 μ m and the spheroidal particle of average grain diameter 0.3～3.0 μ m.
(2-6) as each the described circuit substrate in (2-1)～(2-5), wherein, at an arbitrary position with the bending of the radius of curvature of 1～5mm more than 90 ° the time, the proof voltage of each interlayer of conductor circuit or metal forming is more than 1.0kV with this circuit substrate.
(3-1) metal-base circuit board, it is conductor circuit to be set and the metal-base circuit board that coating forms is set again across insulating barrier on metal forming, it is characterized in that the part of coating is removed and the slit-shaped that forms is formed in the part that aforementioned conductor circuit is not set at least.
(3-2) as (3-1) described metal-base circuit board, wherein, the length that aforementioned slit is processed to respect to bending part is 50%～95%.
(3-3) as (3-1) or (3-2) described metal-base circuit board, wherein, insulating barrier is formed by the heat-curing resin that contains inorganic filler, and the thickness of this insulating barrier is 30 μ m～80 μ m, the thickness of metal forming is 5 μ m～40 μ m, and the thickness of conductor circuit is 9 μ m～40 μ m.
(3-4) as each the described metal-base circuit board in (3-1)～(3-3), wherein, insulating barrier by 50～75 volume % by the molecular Na ion concentration of pelletoid of average grain diameter 2～15 μ m below the maximum particle diameter 30 μ m below 500ppm inorganic filler and the heat-curing resin of remainder form.
(3-5) as each the described metal-base circuit board in (3-1)～(3-4), wherein, heat-curing resin contains through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type.
(3-6) as each the described metal-base circuit board in (3-1)～(3-5), wherein, heat-curing resin contains the high molecular expoxy resin of the straight chain shape of epoxide equivalent 800～4000.
(3-7) as each the described metal-base circuit board in (3-1)～(3-6), wherein, the chloride ion concentration in the heat-curing resin is below 500ppm.
(3-8) as each the described metal-base circuit board in (3-1)～(3-7), wherein, the vitrification point of insulating barrier is 0～40 ℃.
(3-9) as each the described metal-base circuit board in (3-1)～(3-8), wherein, the thickness of coating is 5 μ m～25 μ m.
(3-10) as each the described metal-base circuit board in (3-1)～(3-9), wherein, bend in slit portion.
(3-11) as each the described metal-base circuit board in (3-1)～(3-10), wherein, surface of insulating layer bends more than 90 ° with the radius of curvature of 0.1～0.5mm.
(3-12) as each the described metal-base circuit board in (3-1)～(3-11), wherein, on the surface of coating, be laminated with layer with magnetic loss or layer with dielectric loss.
(3-13) as (3-12) described metal-base circuit board, wherein, layer with magnetic loss is formed at magnetic material more than 2 and organic binding material by aspect ratio, and the content of aforementioned magnetic material is 30～70 volume %, and this thickness with layer of magnetic loss is 3 μ m～50 μ m.
(3-14) as (3-12) described metal-base circuit board, wherein, the layer with dielectric loss is 20～110m by specific area 2The carbon dust of/g and organic binding material form, and the content of aforementioned carbon dust is 5～60 volume %, and this thickness with layer of magnetic loss is 3 μ m～50 μ m.
(3-15) as (3-14) described metal-base circuit board, wherein, carbon dust is the carbon black based on the boron solid solution of specific insulation below 0.1 Ω cm of JIS K 1469.
(3-16) as each the described metal-base circuit board in (3-1)～(3-15), wherein, the thermal conductivity of insulating barrier is 1～4W/mK, and the proof voltage between conductor circuit and the metal forming is more than 1.0kV.
(3-17) LED is characterized in that, is electrically connected to few 1 LED on the conductor circuit of each the described metal-base circuit board in (3-1)～(3-16).
(4-1) led light source unit, it is to be disposed at box surface at the metal-base circuit board that across insulating barrier conductor circuit is set on the metal forming by adhesive tape and to carry the led light source unit that the light-emitting diode more than 1 forms on the conductor circuit of aforementioned metal base circuit board, it is characterized in that, the thickness of aforementioned metal paper tinsel is 18 μ m～300 μ m, the aforementioned dielectric layer contains inorganic filler and heat-curing resin, thickness is 80 μ m～200 μ m, and the thickness of aforementioned conductor circuit is 9 μ m～140 μ m.
(4-2) as (4-1) described led light source unit, wherein, the thermal conductivity of insulating barrier is 1～4W/mK.
(4-3) as (4-1) or (4-2) described led light source unit, wherein, insulating barrier contains 25～50 volume % heat-curing resins, the inorganic filler that remainder constitutes for the spheroidal particle by the spherical coarse grain of average grain diameter 10～40 μ m below the maximum particle diameter 75 μ m and average grain diameter 0.4～1.2 μ m.
(4-4) as each the described led light source unit in (4-1)～(4-3), wherein, the vitrification point of the heat-curing resin in the insulating barrier is 0～40 ℃.
(4-5) as each the described led light source unit in (4-1)～(4-4), wherein, heat-curing resin contains through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type.
(4-6) as each the described led light source unit in (4-1)～(4-5), wherein, heat-curing resin contains the epoxy resin of the straight chain shape of epoxide equivalent 800～4000.
(4-7) as each the described led light source unit in (4-1)～(4-6), wherein, heat-curing resin contains the polyoxyalkylene polyamines.
(4-8) as each the described led light source unit in (4-1)～(4-7), wherein, be 0.8～1 times condition with the epoxide equivalent of the Ahew epoxy resin contained with respect to heat-curing resin, contain the polyoxyalkylene polyamines.
(4-9) as each the described led light source unit in (4-1)～(4-8), wherein, the part of metal-base circuit board more than 1 place except that the part that LED is installed bend more than 90 ° to the conductor circuit face or with the opposition side of the conductor circuit face radius of curvature with 1～5mm, and the conductor circuit of the aforementioned metal-base circuit board that has bent and the proof voltage between the metal forming are more than 1.5kV.
(4-10) as each the described led light source unit in (4-1)～(4-9), wherein, the thermal conductivity of adhesive tape is 1～2W/mK, and thickness is 50 μ m～150 μ m.
(4-11) as each the described led light source unit in (4-1)～(4-10), wherein, adhesive tape contains the macromolecule of acrylic acid and/or methacrylic acid.
(4-12) as each the described led light source unit in (4-1)～(4-11), wherein, adhesive tape contains 40～80 volume % thermal conductivity electric insulation agent.
(4-13) as each the described led light source unit in (4-1)～(4-12), wherein, the agent of thermal conductivity electric insulation is an acrylic rubber.
(4-14) as each the described led light source unit in (4-1)～(4-13), wherein, the acrylate copolymer that aforementioned macromolecule forms for the monomer polymerization that will comprise (methyl) acrylate monomer.
(4-15) as each the described led light source unit in (4-1)～(4-14), wherein, aforementioned (methyl) acrylate monomer is an acrylic acid-2-ethyl caproite.
(4-16) as each the described led light source unit in (4-1)～(4-15), wherein, the maximum particle diameter of thermal conductivity electric insulation agent is below 45 μ m, and average grain diameter is 0.5～30 μ m.
(4-17) as each the described led light source unit in (4-1)～(4-16), wherein, the agent of thermal conductivity electric insulation is to be selected from more than a kind of aluminium oxide, crystallinity silicon dioxide and aluminium hydroxide.
Below, be elaborated to being used to implement optimal way of the present invention.
The structure of following metal-base circuit board and be applicable to hybrid integrated circuit, led module, led light source unit as the metal forming of main composition material, inorganic filler, heat-curing resin, conductor circuit etc.
＜metal-base circuit board 〉
To describing as the structure of the metal-base circuit board on basis of the present invention, characteristic of constituent material etc.
Circuit substrate of the present invention is the circuit substrate that intersecting has insulating barrier and conductor circuit or metal forming, the thickness of conductor circuit or metal forming is 5 μ m～450 μ m, insulating barrier is formed by the firming body of the resin combination that contains inorganic filler and heat-curing resin, and the thickness of aforementioned dielectric layer is 9 μ m～300 μ m.
Its reason is, the thickness of conductor circuit or metal forming is when 5 μ m are following, because the problem of handling etc. and can't making, when 450 μ m are above, not only bending property decline, and the whole thickening of circuit substrate.
Among the present invention, metal-base circuit board can at room temperature bend use, even and since repeatedly bending also can use, so processability height can be realized utilizing etc. again.
[metal forming]
As the material of metal forming, can use aluminum or aluminum alloy, copper or copper alloy, iron, stainless steel etc.In addition, according to the material of metal forming, improving in order to make cementability, better is that the insulating barrier side of metal forming is implemented surface treatments such as electrolytic treatments, etch processes, plasma treatment, primary coat processing or coupling processing.
[insulating barrier]
Among the present invention, the thermal conductivity of insulating barrier better is 1～4W/mK, is more preferably 2～3W/mK.If thermal conductivity is less than 1W/mK, the thermal resistance height of circuit substrate may obtain the thermal diffusivity of target.In addition,, need to increase the amount of inorganic filler, therefore lose flexibility, may obtain good bending property in order to obtain the thermal conductivity more than the 4W/mK.
In addition, the vitrification point of insulating barrier better is 0～40 ℃, is more preferably 10～30 ℃.If vitrification point is less than 0 ℃, then rigidity and electrical insulating property are low, if surpass 40 ℃, then bendability is low.If vitrification point is 0～40 ℃, at room temperature hard can be in the Metal Substrate substrate in the past not used insulating barrier, also be difficult for taking place and the peeling off or the decline of the proof voltage that insulating barrier cracking etc. causes of metal forming even at room temperature implement bending machining or extrusion process.
The thickness of insulating barrier better is 9 μ m～300 μ m.
Among the present invention, insulating barrier is the firming body that contains the resin combination that 25～60 volume % heat-curing resins and remainder be made of inorganic filler, and described inorganic filler is made of the spherical coarse grain of average grain diameter 5～40 μ m below the maximum particle diameter 75 μ m and the spheroidal particle of average grain diameter 0.3～3.0 μ m.If the content of heat-curing resin is more than above-mentioned volume %, then thermal diffusivity descends, and can't obtain above-mentioned thermal conductivity.
As the heat-curing resin that constitutes insulating barrier, can be the macromolecule epoxy resin of 800～4000 straight chain shape based on epoxide equivalent and in the resin of the epoxy resin of the Bisphenol F type of hydrogenation and/or A type, mix phenolic resins, polyimide resin, phenoxy resin, acrylic rubber, acrylonitrile-butadiene rubber etc. again, if consider bending under the room temperature, electrical insulating property, thermal endurance etc., their incorporation better is below 30 quality % with respect to the total amount with epoxy resin.
Heat-curing resin as constituting insulating barrier can use epoxy resin, phenolic resins, organic siliconresin, acrylic resin etc.Wherein, better be when containing inorganic filler, metal forming 1 is good with the bonding force of conductor circuit under solid state, and the epoxy hardener with epoxy resin and addition polymerization type that bendability is good under the room temperature is the material of main component.
Epoxy hardener as the addition polymerization type, it better is polyoxyalkylene polyamines with effect of the bendability raising that after hot curing, makes heat-curing resin, in order to ensure the rigidity of insulating barrier, bendability, insulating properties etc., better be that epoxide equivalent with the Ahew epoxy resin contained with respect to heat-curing resin is that 0.8～1 times condition is added.
In addition, heat-curing resin as constituting insulating barrier better is to use through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type, if epoxide equivalent is 180～240, then at room temperature be aqueous, in heat-curing resin, can in the scope of 60～100 quality %, use.This is compared with the A type with Bisphenol F type commonly used through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type, is not firm structure, and bendability is good during therefore as hardening resin composition.In addition,, therefore can in heat-curing resin, add the high molecular expoxy resin of the straight chain shape of 0～40 quality % epoxide equivalent 800～4000, in insulating barrier, add 50～75 volume % inorganic fillers because the viscosity of resin is low.
Less than 180 o'clock, the low molecular weight impurities with epoxy radicals remaining in the purge process of epoxy resin was many through the epoxide equivalent of the epoxy resin of the Bisphenol F type of hydrogenation and/or A type, and adhesive strength and insulating properties descend, and are unfavorable therefore.In addition, if epoxide equivalent surpasses 240, resin viscosity height then, resin viscosity further rises owing to the interpolation of the high molecular expoxy resin of the straight chain shape of epoxide equivalent 800～4000, be difficult in heat-curing resin, add 0～40 quality % high molecular expoxy resin, in insulating barrier, can add 50～75 volume % inorganic fillers.
If make the high molecular expoxy resin of the straight chain shape that contains epoxide equivalent 800～4000 in the insulating barrier, to compare less than the situation of the epoxy resin of 800 straight chain shape with in heat-curing resin, only using epoxide equivalent, adhesiveness improves.In addition, if the high molecular expoxy resin of the straight chain shape of epoxide equivalent 800～4000 adopts through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type, then not only adhesiveness improves, and the bendability under the room temperature also improves, so be better.
In addition, if make and contain the high molecular expoxy resin that epoxide equivalent surpasses 4000 straight chain shape in the insulating barrier, the filling difficulty of inorganic filler then, the difficulty that mixes with other epoxy resin, contain under the uneven state that becomes to grade with other in epoxy resin, epoxy hardener, inorganic filler and to form insulating barrier, so thermal diffusivity and electrical insulating property are low.The epoxy resin of the straight chain shape of epoxide equivalent 800～4000 better is to add in curable resin below the 40 quality %, if surpass 40 quality %, then the addition of epoxy hardener tails off, and the vitrification point of heat-curing resin (Tg) rises, and bendability may descend.
Chloride ion concentration in the heat-curing resin of formation insulating barrier better is below 500ppm, is more preferably below 250ppm.In the metal-base circuit board in the past, if constitute chloride ion concentration in the heat-curing resin of insulating barrier below 1000ppm, then electrical insulating property at high temperature, also good under the direct voltage.Yet, the hardening resin composition that constitutes the above-mentioned insulating barrier that uses in the metal-base circuit board of the present invention is the soft structure that at room temperature also can form the degree of bending, if the chloride ion concentration in the hardening resin composition surpasses 500ppm, then at high temperature, moving of ionic impurity take place down in direct voltage, may demonstrate the tendency that electrical insulating property descends.
As inorganic filler contained in the insulating barrier, better be the good material of electrical insulating property and thermal conductivity, for example can use silica, aluminium oxide, aluminium nitride, silicon nitride, boron nitride etc.About the granularity of inorganic filler, better be that to contain spherical coarse grain and the average grain diameter that the average grain diameter of maximum particle diameter below 75 μ m is 5～40 μ m be the spheroidal particle of 0.3～3.0 μ m.In this scope, be more preferably that to contain spherical coarse grain and the average grain diameter that average grain diameter is 10～40 μ m be the spheroidal particle of 0.4～1.2 μ m.In addition,, then compare, can realize more highdensity filling, the bending raising under the room temperature with the situation of broken particle of independent use or spherical particle if spherical coarse grain and spheroidal particle are mixed.
The content of the inorganic filler in the insulating barrier better is 50～75 volume %, is more preferably 55～65 volume %.
Na ion concentration in the inorganic filler better is below 500ppm, is more preferably below 100ppm.If the Na ion concentration in the inorganic filler surpasses 500ppm, then at high temperature, direct voltage takes place down by moving of ionic impurity, may demonstrate the tendency that electrical insulating property descends.
Among the present invention, at least 1 that is more preferably the through hole that is used between electric connecting conductor circuit or metal forming at 0.0078mm 2More than.Conductor circuit or metal forming and insulating barrier removed with chemistry, physics or mechanical mode and form the hole that through hole is used, innerly in this space implement wire-bonded, thereby through hole can be realized being electrically connected by filled conductive materials such as plating, print process etc. or from the top conductor circuit.Through hole can be formed, also through hole can be do not formed.
[conductor circuit]
Among the present invention, better be this circuit substrate can be bent more than 90 ° with the radius of curvature of 1～5mm at an arbitrary position, and the proof voltage of each interlayer of conductor circuit or metal forming is more than 1.0kV.If with the radius of curvature below 1mm bending more than 90 °, because the proof voltage of each interlayer of conductor circuit such as insulating barrier cracking or metal forming may be below 1.0kV.Radius of curvature may realize the miniaturization of the module of target more than 5mm or when bending below 90 °.
The thickness of conductor circuit better is 9 μ m～140 μ m, and is insufficient as the function of conductor circuit during less than 9 μ m, if surpass 140 μ m, then not only bendability descends, and thickness increases miniaturization and slimming difficulty.
＜hybrid integrated circuit 〉
Below, the preferred configuration of the hybrid integrated circuit that uses metal-base circuit board of the present invention is described.Use the hybrid integrated circuit of metal-base circuit board of the present invention can suitably use metal forming as the main composition material in the above-mentioned metal-base circuit board, inorganic filler, heat-curing resin, conductor circuit etc.
Fig. 1-1 is a metal-base circuit board of the present invention and an example of using the hybrid integrated circuit of this substrate.
In the hybrid integrated circuit of the present invention, be equipped with a plurality of semiconductors by joints such as solder portions 9 on the conductor circuit 3 of the metal-base circuit board that constitutes by metal forming 1, insulating barrier 2 and conductor circuit 3, i.e. output is with semiconductor 5, control semiconductor 6 and chip part 8, by thermal conductivity bonding agent 10 and box body 11 driving fits with thermal diffusivity.Output with semiconductor 5 common in order to promote distributing of heat with conductor circuit 3 be connected intermediary with radiator 4, but the situation of not using it is arranged also.
In addition, control is with semiconductor 6 because usually without big heating, do not engage with radiator so be not situated between with conductor circuit 3, but also can be situated between with radiator.
As above-mentioned thermal conductivity bonding agent, can use high-termal conductivity filler filling epoxy resin such as gold, silver, nickel, aluminium nitride, aluminium, aluminium oxide or polyurethane resin, organic siliconresin etc. and bonding agent.Also can use the thermal conductivity adhesive sheet of making sheet in advance to replace the thermal conductivity bonding agent.
In addition, can be to adopt the driving fit of silicone grease or fixing etc. based on screw, so long as metal-base circuit board with box body 11 driving fit well with thermal diffusivity the good fixing means of metal-base circuit board and the heat conduction of box body 11 with thermal diffusivity get final product.In addition, the thermal conductivity bonding agent is to distribute and the protection of hybrid integrated circuit, fixing etc. and use in order to promote to export heat with semiconductor 5, but also can not use it.
Be engaged in output semiconductor 5 from the signal of controlling with semiconductor 6 by conductor circuit 3 and closing line 7 electricity.Except be equipped with output with semiconductor 5, control with metal forming 1, insulating barrier 2 and the conductor circuit 3 of the formation metal-base circuit board the part of semiconductor 6 and chip part 8 and can at room temperature implement bending machining or extrusion process according to heating panel or the shape with box body 11 of thermal diffusivity.And, not only can be arranged at flat portions, can also make side or bottom surface or staggered floor or the curved surface etc. of its driving fit according to heating panel or the shape with box body of thermal diffusivity in box body.Therefore, can realize the miniaturization or the slimming of the high heat generation hybrid integrated circuit that metal-base circuit board by in the past and flexible circuit board can't be suitable for.
Use the hybrid integrated circuit of metal-base circuit board of the present invention to constitute by above-mentioned structure, and the thermal conductivity with insulating barrier be proof voltage between 1～4W/mK, conductor circuit and the metal forming more than 1.5kV with the equal characteristic of the metal-base circuit board with smooth metallic plate in the past.In addition, not only flat portions can be arranged at, side or bottom surface or the staggered floor or the curved surface etc. of its driving fit can also be made in box body.In addition, under the state of electric components such as semiconductor element that the needs heat radiations have been installed or impedance chip, also can easily at room temperature bend, therefore can eliminate the restriction in the past that metal-base circuit board can only be used for planar section.
The thickness of used metal forming 1 is 5 μ m～450 μ m, owing to the rigidity that can guarantee metal-base circuit board, bendability, press workability etc., is more preferably 35 μ m～70 μ m.
The thickness of insulating barrier 2 better is 80 μ m～200 μ m, and insulating properties is low during less than 80 μ m, if surpass 200 μ m, then not only thermal diffusivity descends, and thickness increases miniaturization and slimming difficulty.
＜led module 〉
Below, the preferred configuration that has the led module (following also be called for short " led array ") of coating for the surface at metal-base circuit board describes.Use the led array of metal-base circuit board of the present invention can suitably use metal forming as the main composition material in the above-mentioned metal-base circuit board, inorganic filler, heat-curing resin, conductor circuit etc.
Fig. 2-1～Fig. 2-7 is the plane graph of the general configuration of an example of the led module of expression metal-base circuit board of the present invention and this substrate of use.
Use in the led module of metal-base circuit board of the present invention, in the metal-base circuit board that constitutes by metal forming 21, insulating barrier 22, conductor circuit 23 and electrode 24, remove the part metals paper tinsel 21 and the insulating barrier 22 of the position that does not form conductor circuit 23 and electrode 24, form slit portion 25.
Among Fig. 2-2, by except that component mounting portion 24 and input terminal 28, attaching coating 26 at the conductor circuit 23 of the metal-base circuit board of Fig. 2-1 and the formation face side of electrode 24, thus the reinforcement substrate., similarly remove the part coating 26 of the position that does not form conductor circuit 23 and electrode 24 here, form slit portion 25 with metal forming 21 and insulating barrier 22.The slit portion 25 of aforementioned coating 26 better is that the length that is processed to respect to bending part is 50%～95%.In addition, if with respect to the length of bending part more than 50%, then can be with 90 ° of the bendings of the radius of curvature below the 0.5mm, if be processed into below 95%, then crooked place does not have the reinforcing effect of coating, and the conductor circuit that also can not produce crooked place opens circuit or insulating barrier produces problems such as crack.The thickness of above-mentioned coating better is 5 μ m～25 μ m.
Among Fig. 2-3, the attaching of the metal-base circuit board of Fig. 2-2 top of coating 26 be formed with layer 29a or have the layer 29b of dielectric loss with magnetic loss.
Layer 29a with magnetic loss formed at magnetic material more than 2 and organic binding material by aspect ratio, and the content of magnetic material is 30～70 volume %, and the thickness of layer is under the situation of 3 μ m～50 μ m, brings into play good magnetic loss characteristic.
In addition, in the metal-base circuit board of Fig. 2-3, forming under the situation of the layer 29b with dielectric loss, is 20～110m if having the layer 29b of dielectric loss by specific area 2The carbon dust of/g and organic binding material form, and the content of aforementioned carbon dust is 5～60 volume %, and thickness is 3 μ m～50 μ m, then brings into play good dielectric loss characteristics.
Owing to can bring into play good dielectric loss characteristics, therefore there is the carbon dust of the layer of dielectric loss better to be based on the carbon black of the boron solid solution of specific insulation below 0.1 Ω cm of JIS K 1469.
Among Fig. 2-4, in the metal-base circuit board of the present invention, component mounting portion is equipped with heat generating components 210.Here, the dotted line shown in Fig. 2-4 is represented the crooked place 211 of metal-base circuit board of the present invention.
Be formed with slit portion 25 in crooked place 211, so can bend simply, even bending, the conductor circuit of crooked place also passes through coating 26 by reinforcement, therefore can not open circuit, and insulating barrier can not produce the crack yet.
Metal-base circuit board of the present invention like this has by coating reinforcement substrate, even bending also can prevent the problems of crack of opening circuit of conductor circuit and insulating barrier, and processes the great advantages that makes bending property good by the slit.In addition, by layer with magnetic loss or formation, become metal-base circuit board with good electromaganic wave absorbing property with layer of dielectric loss.
In the past, if substrate thickness be metal-base circuit board about 150 μ m with the radius of curvature below 0.5mm bending more than 90 °, then produce opening circuit and the problems of crack of insulating barrier of conductor circuit, need by the coating reinforcement.Yet if by the coating reinforcement, it is firm that metal-base circuit board becomes, and is difficult to bend in the desired position.
The present invention realizes tackling the reinforcement of the substrate of bending and bending property simultaneously, and has the epoch-making metal-base circuit board of electromaganic wave absorbing property concurrently.
The general configuration of one example of the led module of Fig. 2-5 expression metal-base circuit board of the present invention and this substrate of use is the sectional view that input circuit is bent 180 ° situation in slit portion for the metal-base circuit board of Fig. 2-4.In the metal-base circuit board of the present invention, be formed with coating 26 by adhesive linkage on the metal-base circuit board that constitutes by metal forming 21, insulating barrier 22, conductor circuit 23 and electrode 24, and be formed with layer 29a thereon or have the layer 29b of dielectric loss with magnetic loss.
In the metal-base circuit board of Fig. 2-5, conductor circuit 23 and electrode 24 are electrically connected, on the electrode 24 by electrical connections such as solders and be equipped with heat generating components 210.In addition, the back side of metal-base circuit board is by thermal conductivity adhesive tape 213 and box body 212 driving fits with thermal diffusivity.Conductor circuit 23 and wiring lead (input circuit) 24 is electrically connected, and formation can be carried out the state of power supply input to heat generating components such as LED from the outside.
In addition, among Fig. 2-5 to metal forming 21 lateral bucklings, but also can be easily among the present invention to layer 29a or have the layer 29b lateral buckling of dielectric loss with magnetic loss.If the length that is processed into respect to bending part by the slit for the coating of the part of desire bending is 50%～95% at least, then can bend with different shape according to the shape of box body 212 with thermal diffusivity.
The processing of above-mentioned slit not only can be the rectangle processing shown in the metal-base circuit board of Fig. 2-1～Fig. 2-4, also can be that the angle shown in Fig. 2-6 is acute angle-shaped shape or wedge shape, or the form of a plurality of circles of enforcement shown in Fig. 2-7 etc.Certainly, owing to determine bending part easily, better be circular.
The led array that uses metal-base circuit board of the present invention better is to have aforesaid structure, the thickness of metal forming 21 is 5 μ m～40 μ m, insulating barrier 22 contains inorganic filler and heat-curing resin, and thickness is 30 μ m～80 μ m, and the thickness of above-mentioned conductor circuit is 9 μ m～40 μ m.When satisfying these conditions, can realize purpose of the present invention more reliably.
If the thickness of metal forming 21 is more than 5 μ m, then the rigidity of metal-base circuit board can not descend, and purposes can not be restricted yet.If the bending machining that the thickness of metal forming 21 below 40 μ m, does not then need metal-base circuit board with process equipments such as mould and press, can not be difficult to make the metal-base circuit board driving fit in the curved surface of box body etc. with mould or extrusion process yet.In addition, under the state of electric components such as semiconductor element that the needs heat radiations have been installed on the metal-base circuit board or impedance chip, can not be difficult at room temperature bend.Because the rigidity of metal-base circuit board, bendability, press workability etc., particularly radius of curvature 0.1～0.5mm and the bending process more than 90 ° are good, so the thickness of metal forming 21 is more preferably 12 μ m～35 μ m.
Use in the led array of metal-base circuit board of the present invention, insulating barrier 22 better is to contain inorganic filler and heat-curing resin, and thickness is 30 μ m～80 μ m.About the thickness of insulating barrier 22, if more than 30 μ m, then can guarantee insulating properties, if below 80 μ m, then radius of curvature 0.1～0.5mm and the bending process more than 90 ° can be not low yet.
Use in the led array of metal-base circuit board of the present invention, the thickness of conductor circuit better is 9 μ m～40 μ m.If more than 9 μ m, then can fully guarantee function as conductor circuit, when 40 μ m, can guarantee enough bendabilities, can guarantee enough to realize the thickness of miniaturization and slimming.
In addition, the thermal conductivity adhesive tape 213 that uses among the present invention can use will be by metal oxides such as aluminium oxide, titanium dioxide, nitride such as aluminium nitride, boron nitride, silicon nitride, carborundum, the thermal conductivity electric insulation agent that organic substances such as inorganic substances such as aluminium hydroxide or acrylic rubber form be filled in the macromolecule resin material and the thermal conductivity adhesive tape, also can use and will carry out the surface-treated material by silane coupler etc. and be filled into the thermal conductivity adhesive tape that gets in the macromolecule resin.
For the heat that is produced by heat generating components is dispelled the heat to box body by the back side of metal-base circuit board efficiently by metal-base circuit board, thermal conductivity adhesive tape 213 better is to use the thermal conductivity ratio higher adhesive tape of adhesive tape in the past.
As thermal conductivity adhesive tape 213, can suitably use to have following＜led light source unit〉in the adhesive tape of employed material and characteristic.
＜led light source unit 〉
Preferred configuration for the led light source unit that uses metal-base circuit board of the present invention describes.Use the led light source unit of metal-base circuit board of the present invention can suitably use metal forming as the main composition material in the above-mentioned metal-base circuit board, inorganic filler, heat-curing resin, conductor circuit etc.
Fig. 3-1 is the sectional view of the general configuration of an example of expression led light source of the present invention unit.
In the led light source of the present invention unit, on the conductor circuit 33 of the metal-base circuit board that constitutes by metal forming 31, insulating barrier 32 and conductor circuit 33 by joints such as solder portions 35, be equipped with the LED36 more than 1, be situated between with thermal conductivity adhesive tape 37 and box body 38 driving fits with thermal diffusivity.Conductor circuit 33 and wiring lead (input circuit) 34 is electrically connected, and formation can be carried out the state of power supply input to LED from the outside.
In addition, shape whole among Fig. 3-1 is box-shaped, but the metal forming 1, insulating barrier 32 and conductor circuit 33 driving fits that need only the formation metal-base circuit board except that the part that LED36 is installed among the present invention can be adopted different shape according to the surface configuration of the box body 38 with thermal diffusivity in the box body 38 with thermal diffusivity.
Led light source of the present invention unit better is to have aforesaid structure, the thickness of metal forming 31 is 18 μ m～300 μ m, insulating barrier 32 contains inorganic filler and heat-curing resin, and thickness is 80 μ m～200 μ m, and the thickness of conductor circuit 33 is 9 μ m～140 μ m.
As the thickness of metal forming 31, better be 18 μ m～300 μ m.Under the situation of the thickness of metal forming 31 less than 18 μ m, the rigidity of metal-base circuit board descends, and purposes is restricted.If surpass 300 μ m, the bending machining that then not only needs metal-base circuit board with process equipments such as mould and press, and is difficult to make the metal-base circuit board driving fit in the curved surface of box body etc. with mould or extrusion process.In addition, under the state of electric components such as semiconductor element that the needs heat radiations have been installed on the metal-base circuit board or impedance chip, be difficult at room temperature bend.Because the rigidity of metal-base circuit board, bendability, press workability etc., particularly radius of curvature 1～5mm and the bending process more than 90 ° are good, so be more preferably 35 μ m～70 μ m.
Insulating barrier 32 better is to contain inorganic filler and heat-curing resin, and thickness is 80 μ m～200 μ m.About the thickness of insulating barrier 32, insulating properties is low during less than 80 μ m, if surpass 200 μ m, not only thermal diffusivity descends, and thickness increases miniaturization and slimming difficulty.
In the led light source of the present invention unit, the thickness of conductor circuit better is 9 μ m～140 μ m.During less than 9 μ m, insufficient as the function of conductor circuit, if surpass 140 μ m, then not only bendability descends, and thickness increases miniaturization and slimming difficulty.
Even led light source of the present invention unit bends also repeatedly and can use, so the processability height, can realize utilizing again etc.In addition, by after carrying LED on the metal-base circuit board, be adhered to box body with planar portions, process, be out of shape with box body then, thereby can easily realize possessing the production of the led light source unit of box body, so can provide a large amount of led light source unit at low cost with curved surface.
The thermal conductivity adhesive tape 37 that uses among the present invention can use as described later will be by metal oxides such as aluminium oxide, titanium dioxide, nitride such as aluminium nitride, boron nitride, silicon nitride, carborundum, the thermal conductivity electric insulation agent that organic substances such as inorganic substances such as aluminium hydroxide or acrylic rubber form be filled in the macromolecule resin material and the thermal conductivity adhesive tape.In addition, also can use and to have carried out the surface-treated material by silane coupler etc. and be filled into the thermal conductivity adhesive tape that gets in the macromolecule resin.
For the adhesive tape that does not have thermal conductivity, follow the luminous heat of LED insufficient to the heat conduction of box body, cause the temperature of LED to rise, so can't use.According to the inventor's result of study, better being to use thermal conductivity is that 1～2W/mK, thickness are the thermal conductivity adhesive tape of 50 μ m～150 μ m.
Thermal conductivity adhesive tape 37 is characterised in that, the heat that produces when making LED luminous is dispelled the heat to box body by the back side of metal-base circuit board efficiently by metal-base circuit board, uses thermal conductivity than in the past the higher adhesive tape of adhesive tape.
Thermal conductivity adhesive tape 37 employed macromolecular materials are not particularly limited, and in order to improve the adaptation to metal, better are the macromolecules of selecting to contain acrylic acid and/or methacrylic acid.That is better be that to have the acrylate of alkyl of carbon number 2～12 or methacrylate, carbon number be 2～12 alkyl acrylate or alkyl methacrylate.
From the angle of flexibility and processability, monomer better is to be selected to use mixing more than a kind or 2 kinds of ethyl acrylate, propyl acrylate, butyl acrylate, acrylic acid-2-ethyl caproite, 2-ethyl hexyl acrylate, Isooctyl acrylate monomer, decyl acrylate, (methyl) decyl acrylate or (methyl) dodecylacrylate.Wherein, monomer is more preferably acrylic acid-2-ethyl caproite.
Thermal conductivity adhesive tape 37 better is to contain the agent of thermal conductivity electric insulation.As the agent of thermal conductivity electric insulation, so long as get final product, can be arbitrarily at inorganic or organic substance good aspect electrical insulating property and the thermal conductivity, organic substance better is natural rubber or rubber such as NBR, EPDM, good especially is to contain acrylic rubber.In addition, owing to can guarantee good thermal diffusivity, so the agent of thermal conductivity electric insulation better is to contain 40～80 volume % in adhesive tape 7.50～70 volume % are better scopes.
The monomer of using as aforementioned acrylic rubber can the exemplified by acrylic ethyl ester, acrylic acid n-propyl, n-butyl acrylate, isobutyl acrylate, acrylic acid n-pentyl ester, acrylic acid isopentyl ester, the just own ester of acrylic acid, acrylic acid-2-ethyl pentyl ester, acrylic acid n-octyl, acrylic acid-2-ethyl caproite, acrylic acid ester in the positive last of the ten Heavenly stems, acrylic acid dodecyl ester, acrylic acid n-octadecane base ester, acrylic acid cyano group methyl esters, acrylic acid-1-cyano group ethyl ester, 2-cyanoethyl acrylate, acrylic acid-1-cyano group propyl ester, acrylic acid-2-cyano group propyl ester etc.Better be will be selected from wherein combination more than a kind and monomer or the crosslinking points monomer copolymerization of number % and acrylic rubber.Rubber content better is 0.1～30 mass parts in thermal conductivity adhesive tape 37.If less than 0.1 mass parts, then the high-termal conductivity filler is filled into filler precipitation in back in the macromolecule resin material, if surpass 30 mass parts, then viscosity rises, and adds to have problems man-hour.If rubber content is 0.1～30 mass parts, then not only can prevent the filler precipitation, and processability is good.
As aforementioned monomer,, better be that to have the acrylate of alkyl of carbon number 2～12 or methacrylate, carbon number be 2～12 alkyl acrylate or alkyl methacrylate from flexibility and fusible angle.As from flexibility and the preferred monomer of fusible angle, be the mixture more than a kind or 2 kinds that is selected from ethyl acrylate, propyl acrylate, butyl acrylate, acrylic acid-2-ethyl caproite, 2-ethyl hexyl acrylate, Isooctyl acrylate monomer, decyl acrylate, decyl-octyl methacrylate or lauryl methacrylate.Preferred monomer is an acrylic acid-2-ethyl caproite.
For the inorganic substances that are used as the agent of thermal conductivity electric insulation, for example can exemplify metal oxides such as aluminium oxide, titanium dioxide, nitride such as aluminium nitride, boron nitride, silicon nitride, carborundum, aluminium hydroxide etc.Wherein, better be to be selected from more than a kind of aluminium oxide, crystallinity silicon dioxide and aluminium hydroxide.In addition, also can select to have carried out the surface-treated material by silane coupler etc.
In addition, for the size of thermal conductivity electric insulation agent, from the thickness of adhesive tape, the angle of fillibility, better be maximum particle diameter below 45 μ m, average grain diameter is 0.5～30 μ m.
Thermal conductivity adhesive tape 37 can contain known polymerizable compound in the scope of not damaging as the characteristic of target of the present invention.In addition, when solidifying, thermal conductivity adhesive tape 37 do not have to add known additive as required in the scope of influence.As additive, can exemplify the various additives that for example are used to control viscosity, viscosity and modifier, antiaging agent, heat stabilizer, colouring agent etc.
Thermal conductivity adhesive tape 37 can make its curing by general method.For example, can make its curing by the methods such as polymerization of the thermal polymerization of adopting thermal polymerization, the photopolymerization of adopting Photoepolymerizationinitiater initiater, employing thermal polymerization and curing accelerator, but, better be the photopolymerization of adopting Photoepolymerizationinitiater initiater from the angle of productivity etc.
Embodiment
Below, embodiment is described, but the present invention is not limited to these embodiment.
＜metal-base circuit board 〉
[embodiment 1-1]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, be 187 bisphenol A type epoxy resin (big Japanese ink chemical industrial company system: EPICLON830-S) add the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 63 mass parts wherein as curing agent with respect to 100 mass parts epoxide equivalents, (clear and electrician's corporate system: AL-173), the thickness after the curing is 100 μ m to mix the aluminium oxide through pulverizing of average grain diameter 2.2 μ m, maximum particle diameter 20 μ m with the condition that reaches 50 volume % in insulating barrier.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate.Then,, form mask with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board in the position of regulation for the Metal Substrate substrate that obtains.
For the metal-base circuit board that obtains, bend having or not that insulating barrier under 90 ° the state ftractures under the insulating barrier breakdown time when applying direct voltage 1000V (patterned side+) under the following insulating barrier proof voltage value of the state of investigating 90 ° of bendings under insulating barrier puncture voltage after 10 minutes of the vitrification point of adhesive strength, (4) insulating barrier of thermal conductivity, (3) conductor circuit and the insulating barrier of bendability under (1) room temperature, (2) insulating barrier, (5) 260 ℃ of following heat treated, (6) room temperature by method shown below, (7) 125 ℃, (8) room temperature.
These the results are shown in table 1-2.All rerum naturas of the metal-base circuit board that obtains are all good.
(1) for the bendability under the room temperature, metal-base circuit board is processed into 10mm * 100mm, under 25 ± 1 ℃ temperature atmosphere, can form the face side and form the face opposition side to conductor circuit by both hands and be considered as well with the situation of radius of curvature bending more than 90 ° of 5mm with conductor circuit, when implementing bending, situations such as mould that needs use bending machining is used and press are considered as bad.
(2) for Determination of Thermal Conductivity, will remove as the metal forming and the conductor circuit of the base material of metal-base circuit board, insulating barrier is processed into φ 10mm * 100 μ m (part 60 μ m), try to achieve by laser flash method.
(3) for the adhesive strength of conductor circuit and insulating barrier, the conductor circuit of metal-base circuit board is processed into the band shape of wide 10mm, try to achieve by the method for regulation among the JIS C 6481.
(4) for the mensuration of vitrification point (Tg), will remove as the metal forming and the conductor circuit of the base material of metal-base circuit board, insulating barrier is processed into 5mm * 50mm * 100 μ m (part 60 μ m), try to achieve by the dynamic elasticity determination method.
(5) for the mensuration of the insulating barrier puncture voltage of 260 ℃ of following heat treated after 10 minutes, the solder groove that conductor circuit adopts the metal-base circuit board of the circular pattern of φ 20mm to put into to be heated to 260 ℃ was handled 10 minutes, be cooled to after the room temperature by the ladder method of boosting of regulation among the JIS C 2110 and measure proof voltage between circular pattern and the aluminium foil.
(6) for the mensuration of the insulating barrier proof voltage value under 90 ° the state of bending under the room temperature, under the state of the circular pattern of the φ 20mm of the metal-base circuit board that comprises the circular pattern that has formed φ 20mm as conductor circuit state, measure proof voltage between circular pattern and the aluminium foil by the ladder method of boosting of regulation among the JIS C 2110 with 90 ° of the radius of curvature bendings of 1mm.
(7) mensuration of the insulating barrier breakdown time when applying direct voltage 1000V (patterned side+) under 125 ℃, to be made as the circular pattern side of metal-base circuit board that conductor circuit has formed the circular pattern of φ 20mm+, the metal forming side is made as-, apply direct voltage 1000V under 125 ℃, measure insulating barrier breakdown time at this moment.
(8) having or not by naked eyes that the state insulating barrier down of 90 ° of bendings ftractures under the room temperature observed.
[embodiment 1-2]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, be 201 bisphenol A type epoxy resin (japan epoxy resin corporate system: YX-8000) add the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 63 mass parts wherein as curing agent through hydrogenation (being labeled as hydrogenation in the table 1) with respect to 100 mass parts epoxide equivalents, mix average grain diameter 2.2 μ m with the condition that in insulating barrier, reaches 50 volume %, (clear and electrician's corporate system: AL-173), the thickness after the curing is 100 μ m to the aluminium oxide through pulverizing of maximum particle diameter 20 μ m.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.Because the decline of the vitrification point (Tg) of insulating barrier, the bendability under the room temperature significantly improves.Other rerum natura is also good.
[embodiment 1-3]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, wherein with respect to 100 mass parts by 70 quality % epoxide equivalents be 201 bisphenol A type epoxy resin through hydrogenation (the japan epoxy resin corporate system: YX-8000) and 30 quality % epoxide equivalents be that (Dongdu changes into corporate system: YD-927H) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 48 mass parts as curing agent for 1900 bisphenol A type epoxy resin, mix average grain diameter 2.2 μ m with the condition that in insulating barrier, reaches 50 volume %, (clear and electrician's corporate system: AL-173), the thickness after the curing is 100 μ m to the aluminium oxide through pulverizing of maximum particle diameter 20 μ m.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.The conductor circuit of the metal-base circuit board that obtains and the adhesive strength of insulating barrier significantly improve.Other rerum natura is also good.
[embodiment 1-4]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, wherein with respect to 100 mass parts by 70 quality % epoxide equivalents be 201 bisphenol A type epoxy resin through hydrogenation (the japan epoxy resin corporate system: YX-8000) and 30 quality % epoxide equivalents be that (Dongdu changes into corporate system: ST-4100D) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 50 mass parts as curing agent for 1024 the bisphenol A type epoxy resin through hydrogenation, mix average grain diameter 2.2 μ m with the condition that in insulating barrier, reaches 50 volume %, (clear and electrician's corporate system: AL-173), the thickness after the curing is 100 μ m to the aluminium oxide through pulverizing of maximum particle diameter 20 μ m.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.The metal-base circuit board that obtains is except the adhesive strength raising of conductor circuit and insulating barrier, because the decline of the vitrification point (Tg) of insulating barrier, the bendability under the room temperature also significantly improves.Other rerum natura is also good.
[embodiment 1-5]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, wherein with respect to 100 mass parts by the epoxide equivalent of 70 quality % in the epoxy resin integral be 181 bisphenol f type epoxy resin through hydrogenation (the japan epoxy resin corporate system: YL-6753) and 30 quality % epoxide equivalents be that (Dongdu changes into corporate system: ST-4100D) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 55 mass parts as curing agent for 1024 the bisphenol A type epoxy resin through hydrogenation, mix average grain diameter 2.2 μ m with the condition that in insulating barrier, reaches 50 volume %, (clear and electrician's corporate system: AL-173), the thickness after the curing is 100 μ m to the aluminium oxide through pulverizing of maximum particle diameter 20 μ m.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.The metal-base circuit board that obtains is except the adhesive strength raising of conductor circuit and insulating barrier, because the decline of the vitrification point (Tg) of insulating barrier, the bendability under the room temperature also significantly improves.
[embodiment 1-6]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, wherein with respect to 100 mass parts by the epoxide equivalent of 70 quality % in the epoxy resin integral be 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink chemical industrial company system: EXA-7015) and 30 quality % epoxide equivalents be that (the japan epoxy resin corporate system: YL-7170) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 48 mass parts as curing agent for 1200 the bisphenol A type epoxy resin through hydrogenation, mix average grain diameter 2.2 μ m with the condition that in insulating barrier, reaches 50 volume %, (the clear and electrician's corporate system: AL-173) of the aluminium oxide through pulverizing of maximum particle diameter 20 μ m, the chloride ion concentration of heat-curing resin integral body is 250ppm, and the thickness after the curing is 100 μ m.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.The metal-base circuit board that obtains is except the adhesive strength raising of conductor circuit and insulating barrier, because the decline of the vitrification point (Tg) of insulating barrier, the bendability under the room temperature also significantly improves.Insulating barrier when in addition, applying direct voltage 1000V (patterned side+) under 125 ℃ prolongs breakdown time.Other rerum natura is also good.
[embodiment 1-7]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, wherein with respect to 100 mass parts by the epoxide equivalent of 70 quality % in the epoxy resin integral be 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink chemical industrial company system: EXA-7015) and 30 quality % epoxide equivalents be that (the japan epoxy resin corporate system: YL-7170) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 48 mass parts as curing agent for 1200 the bisphenol A type epoxy resin through hydrogenation, the combination maximum particle diameter is below 75 μ m, average grain diameter is 21 μ m, Na ion concentration is aluminium oxide (clear and electrician's corporate system: be 0.7 μ m with average grain diameter CB-A20) of the spherical coarse grain of 10ppm, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit electrolytic copper foil of thick 35 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 50ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier, by making metal-base circuit board, measure various rerum naturas in addition with the same method of embodiment 1-1.
These the results are shown in table 1-2.Insulating barrier significant prolongation breakdown time when applying direct voltage 1000V (patterned side+) under 125 ℃ of the metal-base circuit board that obtains, other rerum natura is also good.
[embodiment 1-8]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, wherein with respect to 100 mass parts by 70 quality % epoxide equivalents be 207 170ppm the bisphenol A type epoxy resin through hydrogenation (big Japanese ink chemical industrial company system: EXA-7015) and 30 quality % epoxide equivalents be that (the japan epoxy resin corporate system: YL-7170) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 48 mass parts as curing agent for 1200 the bisphenol A type epoxy resin through hydrogenation, the combination maximum particle diameter is below 75 μ m, average grain diameter is 21 μ m, Na ion concentration is aluminium oxide (clear and electrician's corporate system: be 0.7 μ m with average grain diameter CB-A20) of the spherical coarse grain of 10ppm, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 66 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit electrolytic copper foil of thick 35 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 60ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier, by making metal-base circuit board, measure various rerum naturas in addition with the same method of embodiment 1-1.
These the results are shown in table 1-2.The thermal conductivity of the metal-base circuit board that obtains further improves, and other rerum natura is also good.
[comparative example 1-1]
As show shown in the 1-1, on the aluminium foil of thick 400 μ m, form insulating barrier, be 187 bisphenol A type epoxy resin (big Japanese ink chemical industrial company system: EPICLON850-S) add the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 63 mass parts wherein as curing agent with respect to 100 mass parts epoxide equivalents, (clear and electrician's corporate system: AL-l73), the thickness after the curing is 100 μ m to mix the aluminium oxide through pulverizing of average grain diameter 2.2 μ m, maximum particle diameter 20 μ m with the condition that reaches 80 volume % in insulating barrier.Then, the electrolytic copper foil of the thick 210 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.The metal-base circuit board that obtains does not almost have bendability, at room temperature can't bend with hand, uses bending to be bent to 90 ° with mould and press.In addition, a little less than the adhesive strength of conductor circuit and insulating barrier, the insulating barrier proof voltage value under the room temperature under 90 ° the state of bending is extremely low.Insulating barrier when in addition, applying direct voltage 1000V (patterned side+) under 125 ℃ is also extremely short breakdown time.In addition, thermal conductivity is local different, and deviation is big.
[comparative example 1-2]
As show shown in the 1-1, on the aluminium foil of thick 40 μ m, form insulating barrier, be 187 bisphenol A type epoxy resin (big Japanese ink chemical industrial company system: EPICLON850-S) add the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 63 mass parts wherein as curing agent with respect to 100 mass parts epoxide equivalents, (clear and electrician's corporate system: A-13-L), the thickness after the curing is 60 μ m to mix the aluminium oxide through pulverizing of average grain diameter 57 μ m, maximum particle diameter 90 μ m with the condition that reaches 50 volume % in insulating barrier.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.The metal-base circuit board that obtains partly confirms to be considered in a large number projection concavo-convex of alumina packing in the insulating layer exposing of conductor circuit face, insulating barrier produces the crack when at room temperature bending.In addition, a little less than the adhesive strength of conductor circuit and insulating barrier, the insulating barrier proof voltage value under the room temperature under 90 ° the state of bending is extremely low.Insulating barrier when in addition, applying direct voltage 1000V (patterned side+) under 125 ℃ is also extremely short breakdown time.
[comparative example 1-3]
As show shown in the 1-1, on the aluminium foil of thick 400 μ m, form insulating barrier, wherein with respect to 100 mass parts by 40 quality % epoxide equivalents be 187 bisphenol A type epoxy resin (big Japanese ink chemical industrial company system: EPICLON850-S) and 60 quality % epoxide equivalents be that (the japan epoxy resin corporate system: エ ピ コ one ト 1010) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 51 mass parts as curing agent for 4000 bisphenol A type epoxy resin, mix average grain diameter 2.2 μ m with the condition that in insulating barrier, reaches 50 volume %, (clear and electrician's corporate system: AL-173), the thickness after the curing is 100 μ m to the aluminium oxide through pulverizing of maximum particle diameter 20 μ m.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.The metal-base circuit board that obtains does not almost have bendability, at room temperature can't bend with hand, though use bending to be bent to 90 ° with mould and press, but vitrification point (Tg) rises, bendability under the room temperature is insufficient, and the insulating barrier proof voltage value under the room temperature under 90 ° the state of bending is significantly low.
[comparative example 1-4]
As show shown in the 1-1, on the aluminium foil of thick 400 μ m, form insulating barrier, be 238 by 70 quality % epoxide equivalents wherein with respect to 100 mass parts, chloride concentration in the resin is (chemical company of the common prosperity society system: be 1200 with 30 quality % epoxide equivalents EPOLIGHT4000) of the bisphenol A type epoxy resin through hydrogenation of 1500ppm, chloride concentration in the resin is that (the japan epoxy resin corporate system: エ ピ コ one ト 4004P) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 42 mass parts as curing agent for the bisphenol f type epoxy resin of 920ppm, mix average grain diameter 2.2 μ m with the condition that in insulating barrier, reaches 50 volume %, (the clear and electrician's corporate system: AL-173) of the aluminium oxide through pulverizing of maximum particle diameter 20 μ m, the chloride ion concentration of heat-curing resin integral body is 1000ppm, and the thickness after the curing is 100 μ m.Then, the electrolytic copper foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the Metal Substrate substrate, by making metal-base circuit board with the same method of embodiment 1-1, measures various rerum naturas in addition.
These the results are shown in table 1-2.Insulating barrier when applying direct voltage 1000V (patterned side+) under 125 ℃ of the metal-base circuit board that obtains is extremely short breakdown time.
[comparative example 1-5]
As show shown in the 1-1, on the aluminium foil of thick 400 μ m, form insulating barrier, be 238 by 70 quality % epoxide equivalents wherein with respect to 100 mass parts, chloride concentration in the resin is (chemical company of the common prosperity society system: be 1200 with 30 quality % epoxide equivalents EPOLIGHT4000) of the bisphenol A type epoxy resin through hydrogenation of 1500ppm, chloride concentration in the resin is that (the japan epoxy resin corporate system: エ ピ コ one ト 4004P) epoxy resin of Gou Chenging adds the polypropyleneoxide diamine (Ha Le Star マ Application corporate system: the mass ratio of D-400 and D-2000 be 6: 4) of 63 mass parts as curing agent for the bisphenol f type epoxy resin of 920ppm, the combination maximum particle diameter is below 75 μ m, average grain diameter is 25 μ m, Na ion concentration is aluminium oxide (the MICRON corporate system: be 1.2 μ m with average grain diameter AX-25) of the spherical coarse grain of 530ppm, Na ion concentration is that (the MICRON corporate system: AW15-25) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 396ppm.Then, the fit electrolytic copper foil of thick 35 μ m, make the insulating barrier hot curing by heating, the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier is that the Na ion concentration of the inorganic filler integral body in 1000ppm, the insulating barrier is the Metal Substrate substrate of 500ppm, by making metal-base circuit board, measure various rerum naturas in addition with the same method of embodiment 1-1.
These the results are shown in table 1-2.Insulating barrier when applying direct voltage 1000V (patterned side+) under 125 ℃ of the metal-base circuit board that obtains is very short breakdown time.
The kind of the thickness of each of metal-base circuit board layer, the kind of heat-curing resin and incorporation, the chloride ion concentration that contains, inorganic filler and the Na ion concentration that contains are shown in table 1-1.
Table 1-1
The thickness of metal-base circuit board The kind of heat-curing resin and incorporation Inorganic filler (aluminium oxide)
Metal forming (μ m) Insulating barrier (μ m) Conductor circuit (μ m) Epoxy resin (1) Epoxy resin (2) Chloride ion concentration in the heat-curing resin (ppm) Inorganic filler (1) Inorganic filler (2) Inorganic filler content in the insulating barrier (volume %)
Kind Epoxide equivalent (g/eq) Chloride ion concentration (ppm) Content in the epoxy resin (quality %) Kind Epoxide equivalent (g/eq) Chloride ion concentration (ppm) Content in the epoxy resin (quality %) Kind Na ion concentration (ppm) Kind Na ion concentration (ppm)
Embodiment 1-1 40 100 35 Bisphenol A-type 187 700 100 - - - - 450 Pulverize 230 - - 50
Embodiment 1-2 40 100 35 The hydrogenated bisphenol A type 201 700 100 - - - - 460 Pulverize 230 - - 50
Embodiment 1-3 40 100 35 The hydrogenated bisphenol A type 201 700 70 Bisphenol A-type 1900 630 30 490 Pulverize 230 - - 50
Embodiment 1-4 40 100 35 The hydrogenated bisphenol A type 201 700 70 The hydrogenated bisphenol A type 1024 810 30 500 Pulverize 230 - - 50
Embodiment 1-5 40 100 35 A Hydrogenated Bisphenol A F type 181 700 70 The hydrogenated bisphenol A type 1024 810 30 500 Pulverize 230 - - 50
Embodiment 1-6 40 100 35 The hydrogenated bisphenol A type 207 170 70 The hydrogenated bisphenol A type 1200 250 30 180 Pulverize 230 - - 50
Embodiment 1-7 40 100 35 The hydrogenated bisphenol A type 207 170 70 The hydrogenated bisphenol A type 1200 250 30 180 Spherical coarse grain 10 Spheroidal particle 8 50
Embodiment 1-8 40 100 35 The hydrogenated bisphenol A type 207 170 70 The hydrogenated bisphenol A type 1200 250 30 180 Spherical coarse grain 10 Spheroidal particle 8 66
Comparative example 1-1 400 100 210 Bisphenol A-type 187 700 100 - - - - 450 Pulverize 230 - - 80
Comparative example 1-2 40 60 35 Bisphenol A-type 187 700 100 - - - - 450 Pulverize 230 - - 50
Comparative example 1-3 400 100 35 Bisphenol A-type 187 700 40 Bisphenol A-type 4000 700 60 480 Pulverize 230 - - 50
Comparative example 1-4 400 100 35 The hydrogenated bisphenol A type 238 1500 70 The Bisphenol F type 1200 920 30 1000 Pulverize 230 - - 50
Comparative example 1-5 400 100 35 The hydrogenated bisphenol A type 238 1500 70 The Bisphenol F type 1200 920 30 1000 Spherical coarse grain 530 Spheroidal particle 396 50
The various rerum naturas of the metal-base circuit board of making are shown in table 1-2.
Table 1-2
Bendability under the room temperature The thermal conductivity of insulating barrier (W/mK) Adhesive strength (the N/cm of conductor circuit and insulating barrier 2) The vitrification point of insulating barrier (℃) The insulating barrier puncture voltage (kV) of 260 ℃ of following heat treated after 10 minutes Insulating barrier proof voltage value (kV) under the room temperature under 90 ° the state of bending Insulating barrier breakdown time when applying direct voltage 1000V under 125 ℃ (hour) What the state insulating barrier down of 90 ° of bendings ftractureed under the room temperature has or not
Embodiment 1-1 Well 2.0 16.0 38.0 4.0 4.0 1200 Do not have
Embodiment 1-2 Well 2.0 10.0 8.0 3.5 4.0 1050 Do not have
Embodiment 1-3 Well 2.0 25.0 28.0 4.0 4.0 1300 Do not have
Embodiment 1-4 Well 2.0 23.0 18.0 4.0 3.8 1020 Do not have
Embodiment 1-5 Well 2.0 22.0 16.0 4.0 4.0 1030 Do not have
Embodiment 1-6 Well 2.0 20.0 20.0 3.5 2.5 51000 Do not have
Embodiment 1-7 Well 2.0 20.0 20.0 4.5 5.0 103000 Do not have
Embodiment 1-8 Well 4.0 20.0 21.0 3.5 4.0 98000 Do not have
Comparative example 1-1 Bad 3.0 5.1 38.0 1.2 0.5 490 Have
Comparative example 1-2 Bad 2.0 20.0 38.0 1.3 0.8 510 Have
Comparative example 1-3 Bad 2.0 20.3 80.0 3.0 0.5 1210 Have
Comparative example 1-4 Bad 2.0 18.1 20.0 1.0 0.7 302 Do not have
Comparative example 1-5 Bad 2.0 17.5 20.0 1.0 0.7 194 Do not have
＜Mulitilayer circuit board 〉
(embodiment 2-1)
On the Copper Foil of thick 35 μ m, form insulating barrier, be that 201 bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YX-8000 ") and 30 quality % epoxide equivalents are that the epoxy resin that 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") constitutes adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % in the epoxy resin integral wherein with respect to 100 mass parts, the combination maximum particle diameter is below 75 μ m, average grain diameter is that the aluminium oxide (clear and electrician's corporate system " CB-A20 ") of the spherical coarse grain of 21 μ m and aluminium oxide (Admatechs corporate system " AO-802 ") that average grain diameter is the spheroidal particle of 0.6 μ m mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 6: 4) in insulating barrier, and the thickness after the curing is 100 μ m.Then, the Copper Foil of the thick 35 μ m that fit makes the insulating barrier hot curing by heating, obtains the foliation substrate of internal layer.
Then,, form mask with dry film, behind the etching Copper Foil, remove dry film, form circuit, make the internal layer circuit substrate in the position of regulation for the substrate that obtains.
As substrate, the Copper Foil of fit above-mentioned insulating barrier and thick 35 μ m is heating and curing it, makes multilager base plate with the internal layer circuit substrate that obtains.
Then, in the assigned position of outer circuit hole with rig drill diameter 0.5mm, connect internal layer circuit and outer circuit after, implement copper facing and form through hole.Pass through said method etching outer circuit in its surface again, obtain Mulitilayer circuit board.
For Mulitilayer circuit board, the job stability of the proof voltage the when thermal conductivity by method evaluation of measuring (1) insulating barrier shown below, the vitrification point of (2) insulating barrier, (3) bending, (4) bendability, (5) power component.
(1) measuring thermal conductivity of insulating barrier
The insulating barrier of circuit substrate is made the discoid firming body of diameter 10mm * thick 2mm in addition, try to achieve by laser flash method.
(2) vitrification point of insulating barrier
Use the circuit substrate of the preceding one deck of multiple stratification, will remove as the metal forming and the conductor circuit of base material, the insulating barrier that takes out is processed into 5mm * 50mm, try to achieve by the Measurement of Dynamic Viscoelasticity method by etching method.
Proof voltage when (3) bending
Under the state of the circular pattern of the diameter 20mm of the Mulitilayer circuit board that comprises the circular pattern that has formed diameter 20mm as outer circuit state, measure proof voltage between internal layer circuit and the aluminium foil by the ladder method of boosting of regulation among the JIS C 2110 with 90 ° of the radius of curvature bendings of 1mm.
(4) bendability under the room temperature
Mulitilayer circuit board (use at internal layer, outerly do not form circuit pattern and be the substrate of whole conductor foil) is processed into 10mm * 100mm, under 25 ± 1 ℃ temperature atmosphere, can form the face side and form the face opposition side to conductor circuit by both hands and be considered as well with the situation of radius of curvature bending more than 90 ° of 5mm with conductor circuit, when implementing bending, situations such as mould that needs use bending machining is used and press are considered as bad.
(5) job stability of power component
Make the module that 3 corporate system p-mos-FET of Hitachi (2SK2174S) have been installed with the interval of 2mm, the condition with per 1 element consumption 10W electric power under 100 ℃ environment turned round 96 hours continuously, estimated having or not of misoperation.Do not take place under the situation of misoperation, the consumption electric power that adds 10W is again estimated once more, and the consumption electric power amount during with the generation misoperation is estimated the job stability of power component.
These the results are shown in table 2-1.
Table 2-1
The thermal conductivity of insulating barrier (W/mK) The vitrification point of insulating barrier (Tg) (℃) Bendability under the room temperature Breakdown voltage (kV) under the room temperature under 90 ° the state of bending The job stability of electronic component (W)
Embodiment 2-1 2.0 20.0 Well 5.0 ＞50
Embodiment 2-2 4.0 21.0 Well 4.0 ＞50
Embodiment 2-3 2.0 38.0 Well 4.0 ＞50
Embodiment 2-4 2.0 8.0 Well 4.0 ＞50
Comparative example 2-1 2.0 38.0 Bad 0.5 ＞50
Comparative example 2-2 2.0 38.0 Bad 0.8 ＞50
(embodiment 2-2)
Is that 201 bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YX-8000 ") and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent except the composition of insulating barrier adopts with respect to 100 mass parts by the epoxide equivalent of 70 quality %, the combination maximum particle diameter is below 75 μ m, average grain diameter is outside the aluminium oxide (clear and electrician's corporate system " CB-A20 ") of the spherical coarse grain of 21 μ m and aluminium oxide (Admatechs corporate system " AO-802 ") that average grain diameter is the spheroidal particle of 0.6 μ m mix with the condition that reaches 65 volume % (mass ratio of spherical coarse grain and spheroidal particle is 6: 4) in insulating barrier, by making Mulitilayer circuit board, by estimating with the same method of embodiment 2-1 with the same method of embodiment 2-1.2-1 is shown in the results are shown in of they.
(embodiment 2-3)
Except with respect to 100 mass parts epoxide equivalents being 187 bisphenol A type epoxy resin (big Japanese ink chemical industrial company system: EPICLON850-S) add the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 63 mass parts as curing agent, the combination maximum particle diameter is below 75 μ m, average grain diameter is outside the aluminium oxide (clear and electrician's corporate system " CB-A20 ") of the spherical coarse grain of 21 μ m and aluminium oxide (Admatechs corporate system " AO-802 ") that average grain diameter is the spheroidal particle of 0.6 μ m mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 6: 4) in insulating barrier, by making Mulitilayer circuit board, by estimating with the same method of embodiment 2-1 with the same method of embodiment 2-1.2-1 is shown in the results are shown in of they.
(embodiment 2-4)
Except being that 201 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YX-8000 ") adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 60 mass parts as curing agent with respect to 100 mass parts epoxide equivalents, the combination maximum particle diameter is below 75 μ m, average grain diameter is outside the aluminium oxide (clear and electrician's corporate system " CB-A20 ") of the spherical coarse grain of 21 μ m and aluminium oxide (Admatechs corporate system " AO-802 ") that average grain diameter is the spheroidal particle of 0.6 μ m mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 6: 4) in insulating barrier, by making Mulitilayer circuit board, by estimating with the same method of embodiment 2-1 with the same method of embodiment 2-1.2-1 is shown in the results are shown in of they.
(comparative example 2-1)
Except with respect to 100 mass parts epoxide equivalents being 187 bisphenol A type epoxy resin (big Japanese ink chemical industrial company system: EPICLON850-S) add the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 63 mass parts as curing agent, the combination maximum particle diameter is below 75 μ m, average grain diameter is outside the aluminium oxide (clear and electrician's corporate system " CB-A20 ") of the spherical coarse grain of 21 μ m and aluminium oxide (Admatechs corporate system " AO-802 ") that average grain diameter is the spheroidal particle of 0.6 μ m mix with the condition that reaches 80 volume % (mass ratio of spherical coarse grain and spheroidal particle is 6: 4) in insulating barrier, by making Mulitilayer circuit board, by estimating with the same method of embodiment 2-1 with the same method of embodiment 2-1.2-1 is shown in the results are shown in of they.The Mulitilayer circuit board that obtains does not almost have bendability, at room temperature can't bend with hand, uses bending to be bent to 90 ° with mould and press.In addition, proof voltage is low.
(comparative example 2-2)
Except forming on the Al plate of thick 1500 μ m the insulating barrier, by estimating with the same method of embodiment 2-1.2-1 is shown in the results are shown in of they.The Mulitilayer circuit board that obtains does not almost have bendability, at room temperature can't bend with hand, uses bending to be bent to 90 ° with mould and press.The various characteristics of Mulitilayer circuit board is shown in table 2-1.
＜led module 〉
(embodiment 3-1)
On the Copper Foil of thick 18 μ m, form insulating barrier, be that 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % in the epoxy resin integral wherein with respect to 100 mass parts, the combination maximum particle diameter is below 30 μ m, average grain diameter is 10 μ m, Na ion concentration is that the aluminium oxide (Denki Kagaku Kogyo kabushiki's system " DAW-10 ") and the average grain diameter of the spherical coarse grain of 90ppm is 0.7 μ m, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 50 μ m for the aluminium oxide of the spheroidal particle of 8ppm.
Then, the fit Copper Foil of thick 18 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 50ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, form mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.Then, by metal-base circuit board attach the coating (Buddhist nun is closed industrial group's system " NIKAFLEX CKSE ") of thick 12.5 μ m except that component mounting part and the input terminal part partly, thereby the reinforcement substrate.
Then, the compacting blanking units with the Thomson mould of the required same shape of seam shape has been installed in use, remove part metals paper tinsel, insulating barrier and the coating of the position that does not form conductor circuit and electrode, the length that is processed into respect to bending part is 80%, obtains comprising the metal-base circuit board that can easily bend of the slit portion that processes and get.
Then, on the component mounting electrode partly of metal-base circuit board,, LED (Ri Ya chemical company system " NFSW036B ") is installed by reflow soldering by silk screen printing coating solder(ing) paste (thousand live metal company system " M705 ").Then, to comprise the state of slit portion, use one side of wide 200mm, thick 0.6mm to be processed into the stainless steel bending tool of radius of curvature 0.3mm, the radius of curvature of metal-base circuit board with 0.3mm bent, use the thermal conductivity adhesive tape to be fixed on the aluminum box body of thick 1mm, obtain led module.
Proof voltage, (5) electromaganic wave absorbing property by method shown below during for the evaluation of the bendability under the tensile strength under (1) room temperature, (2) room temperature, (3) conductor circuit, (4) bending are measured.
(1) tensile strength under the room temperature
Metal-base circuit board is processed into 10mm * 100mm, and under 25 ± 1 ℃ temperature atmosphere, the intensity when breaking by TENSILON tensile-strength tester mensuration metal-base circuit board is as tensile strength.
(2) bendability under the room temperature
Metal-base circuit board is processed into 10mm * 100mm, under 25 ± 1 ℃ temperature atmosphere, can form the face side and form the face opposition side to conductor circuit by both hands and be considered as well with the situation of radius of curvature bending more than 90 ° of 0.5mm with conductor circuit, when implementing bending, situations such as mould that needs use bending machining is used and press are considered as bad.
(3) evaluation of conductor circuit
Under 25 ± 1 ℃ temperature atmosphere, on the led module that obtains, connect stabilized power supply, by 10V voltage, 150mA electric current, LED was lighted more than 1 hour.At this moment LED situation about lighting more than 1 hour is regarded as well, and the situation that LED did not light or do not light more than 1 hour is regarded as bad.
Proof voltage when (4) bending
Under the state of metal-base circuit board, measure proof voltage between conductor circuit and the base metal paper tinsel (Cu paper tinsel) by the ladder method of boosting of regulation among the JIS C 2110 with 90 ° of the radius of curvature of 0.3mm bendings.
(5) electromaganic wave absorbing property
For the substrate that obtains, use network analyser (8517D, Agilent Technologies's system), for the frequency measurement electromaganic wave absorbing property of 300MHz and 1GHz.Absorption characteristic is used the microstrip line method, calculates assimilation ratio (Ploss/Pin) according to the measurement result of electromagnetic reflected signal S11 on the line and transmission signal S21.
These the results are shown in table 3-1.
Table 3-1
Tensile strength (N/mm under the room temperature 2) Bendability under the room temperature The evaluation of conductor circuit Proof voltage during bending (kV) Electromaganic wave absorbing property (300MHz band) Electromaganic wave absorbing property (1GHz band)
Embodiment 3-1 410 Well Well 2.1 0 0
Embodiment 3-2 430 Well Well 2.0 0.3 0.5
Embodiment 3-3 415 Well Well 2.3 0.4 0.6
Comparative example 3-1 180 Well Bad 0.5 0 0
Comparative example 3-2 400 Bad Well 2.1 0 0
Comparative example 3-3 430 Well Well 2.0 0.05 0.2
Comparative example 3-4 410 Well Well 2.3 0.1 0.2
(embodiment 3-2)
On the Copper Foil of thick 18 μ m, form insulating barrier, be that 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % in the epoxy resin integral wherein with respect to 100 mass parts, the combination maximum particle diameter is below 30 μ m, average grain diameter is 10 μ m, Na ion concentration is that the aluminium oxide (Denki Kagaku Kogyo kabushiki's system " DAW-10 ") and the average grain diameter of the spherical coarse grain of 90ppm is 0.7 μ m, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 50 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit Copper Foil of thick 18 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 50ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, form mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.Then, by metal-base circuit board attach the coating (Buddhist nun is closed industrial group's system " NIKAFLEX CKSE ") of thick 12.5 μ m except that component mounting part and the input terminal part partly, thereby the reinforcement substrate.
Then, formation is that the content of the aforementioned magnetic material that forms of 4 magnetic material and organic binding material is the layer with magnetic loss of the thick 30 μ m of 50 volume % by aspect ratio on coating.
Then, use one side of wide 200mm, thick 0.6mm to be processed into the stainless steel bending tool of radius of curvature 0.3mm, remove part metals paper tinsel, insulating barrier, the coating of the position do not form conductor circuit and electrode and have the layer of magnetic loss, the length that is processed into respect to bending part is 80%, obtains comprising the metal-base circuit board that can easily bend of the slit portion that processes and get.
Then, on the component mounting electrode partly of metal-base circuit board,, LED (Ri Ya chemical company system " NFSW036B ") is installed by reflow soldering by silk screen printing coating solder(ing) paste (thousand live metal company system " M705 ").Then, the radius of curvature of metal-base circuit board with 0.3mm bent, use the thermal conductivity adhesive tape to be fixed on the aluminum box body of thick 1mm, obtain led module with the state that comprises slit portion.With embodiment 3-1 similarly estimate the results are shown in the table 3-1.
(embodiment 3-3)
On the Copper Foil of thick 18 μ m, form insulating barrier, be that 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % in the epoxy resin integral wherein with respect to 100 mass parts, the combination maximum particle diameter is below 30 μ m, average grain diameter is 10 μ m, Na ion concentration is that the aluminium oxide (Denki Kagaku Kogyo kabushiki's system " DAW-10 ") and the average grain diameter of the spherical coarse grain of 90ppm is 0.7 μ m, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 50 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit Copper Foil of thick 18 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 50ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, form mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.Then, by metal-base circuit board attach the coating (Buddhist nun is closed industrial group's system " NIKAFLEX CKSE ") of thick 12.5 μ m except that component mounting part and the input terminal part partly, thereby the reinforcement substrate.
Then, formation is 100m by the specific area as carbon dust on coating 2The content of/g, the aforementioned carbon dust that forms based on the carbon black and the organic binding material of the boron solid solution of resistivity below 0.1 Ω cm of JIS K1469 is the layer with dielectric loss of the thick 30 μ m of 50 volume %.
Then, use one side of wide 200mm, thick 0.6mm to be processed into the stainless steel bending tool of radius of curvature 0.3mm, remove part metals paper tinsel, insulating barrier, the coating of the position do not form conductor circuit and electrode and have the layer of dielectric loss, the length that is processed into respect to bending part is 80%, obtains comprising the metal-base circuit board that can easily bend of the slit portion that processes and get.
Then, on the component mounting electrode partly of metal-base circuit board,, LED (Ri Ya chemical company system " NFSW036B ") is installed by reflow soldering by silk screen printing coating solder(ing) paste (thousand live metal company system " M705 ").Then, the radius of curvature of metal-base circuit board with 0.3mm bent, use the thermal conductivity adhesive tape to be fixed on the aluminum box body of thick 1mm, obtain led module with the state that comprises slit portion.With embodiment 3-1 similarly estimate the results are shown in the table 3-1.
(comparative example 3-1)
Except the slit processing of the reinforcement not implementing substrate to be carried out and bending part by attaching coating, implement all same processing with embodiment 3-1, obtain metal-base circuit board.
Then, on the component mounting electrode partly of metal-base circuit board,, LED (Ri Ya chemical company system " NFSW036B ") is installed by reflow soldering by silk screen printing coating solder(ing) paste (doing metal company system " M705 ").Then, the radius of curvature of metal-base circuit board with 0.3mm bent, use the thermal conductivity adhesive tape to be fixed on the aluminum box body of thick 1mm, obtain led module.With embodiment 3-1 similarly estimate the results are shown in the table 3-1.
(comparative example 3-2)
Except the slit processing of not implementing bending part, implement all same processing with embodiment 3-1, obtain metal-base circuit board.
Then, on the component mounting electrode partly of metal-base circuit board,, LED (Ri Ya chemical company system " NFSW036B ") is installed by reflow soldering by silk screen printing coating solder(ing) paste (thousand live metal company system " M705 ").Then, the radius of curvature of metal-base circuit board with 0.3mm bent, use the thermal conductivity adhesive tape to be fixed on the aluminum box body of thick 1mm, obtain led module.With embodiment 3-1 similarly estimate the results are shown in the table 3-1.
(comparative example 3-3)
Except formation on coating is that the content of the aforementioned magnetic material that forms of 1 magnetic material and organic binding material is the layer with magnetic loss of thick 2 μ m of 20 volume % by aspect ratio, implement all same processing, obtain metal-base circuit board with embodiment 3-2.
Then, on the component mounting electrode partly of metal-base circuit board,, LED (Ri Ya chemical company system " NFSW036B ") is installed by reflow soldering by silk screen printing coating solder(ing) paste (thousand live metal company system " M705 ").Then, the radius of curvature of metal-base circuit board with 0.3mm bent, use the thermal conductivity adhesive tape to be fixed on the aluminum box body of thick 1mm, obtain led module with the state that comprises slit portion.With embodiment 3-1 similarly estimate the results are shown in the table 3-1.
(comparative example 3-4)
Except formation on coating is 10m by the specific area as carbon dust 2/ g, be that the content of the carbon black of boron solid solution of 0.2 Ω cm and the aforementioned carbon dust that organic binding material forms is outside the layer with dielectric loss of thick 2 μ m of 4 volume % based on the specific insulation of JIS K 1469, implement all same processing, obtain metal-base circuit board with embodiment 3-3.
Then, on the component mounting electrode partly of metal-base circuit board,, LED (Ri Ya chemical company system " NFSW036B ") is installed by reflow soldering by silk screen printing coating solder(ing) paste (thousand live metal company system " M705 ").Then, the radius of curvature of metal-base circuit board with 0.3mm bent, use the thermal conductivity adhesive tape to be fixed on the aluminum box body of thick 1mm, obtain led module with the state that comprises slit portion.With embodiment 3-1 similarly estimate the results are shown in the table 3-1.
＜led light source unit 〉
(embodiment 4-1)
On the Copper Foil of thick 35 μ m, form insulating barrier, be that 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % in the epoxy resin integral wherein with respect to 100 mass parts, the combination maximum particle diameter is below 75 μ m, average grain diameter is 21 μ m, Na ion concentration is that the aluminium oxide (clear and electrician's corporate system " CB-A20 ") and the average grain diameter of the spherical coarse grain of 10ppm is 0.7 μ m, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit Copper Foil of thick 35 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 50ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, form mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.
For the thermal conductivity adhesive tape, dissolved at 90 quality % and to have mixed 10 quality % acrylic acid (East Asia Synesis Company system " AA ") in the acrylic acid-2-ethyl caproite (East Asia Synesis Company system " 2EHA ") of 10 quality % acrylic rubbers (Japanese ZEON corporate systems " AR-53L "), add 0.5 quality %2 again as Photoepolymerizationinitiater initiater, 2-dimethoxy-1,2-diphenylethane-1-ketone (Ciba corporate system), 0.2 quality % triethylene glycol two mercaptan (the kind chemical company of ball system), 0.2 quality %2-butyl-2-ethyl-1, ammediol diacrylate (chemical company of common prosperity society system) mixes, and obtains resin combination.
In aforementioned resin, fill 300 mass parts aluminium oxide (Denki Kagaku Kogyo kabushiki's system " DAW-10 "), mix, disperse, obtain heat-conductive resin composition.
Heat-conductive resin composition is carried out deaeration handle, be coated on the surface with the thickness of 100 μ m and implemented on the polyester film of the thick 75 μ m that the demoulding handles, the polyester film that the demoulding is handled has been implemented on the lining surface, from tow sides with 3000mJ/cm 2The ultraviolet ray of irradiation 365nm obtains the heat conduction adhesive tape.
Assigned position at the conductor circuit of metal-base circuit board is coated with solder(ing) paste (thousand live metal company system " M705 ") by silk screen printing, by reflow soldering LED (Ri Ya chemical company system " NFSWO36AT ") is installed.Then, be that the thermal conductivity adhesive tape of 1W/mK, thick 100 μ m is fixed in the box body of U font in the side that LED is not installed of metal-base circuit board by thermal conductivity, obtain the led light source unit.
Under the environment of 23 ℃ of temperature, humidity 30%, on the led light source unit that obtains, connect stabilized power supply, by the electric current of 450mA, light LED.At this moment voltage is 11.8V.By thermocouple measurement by the temperature of the LED that lighted, the temperature of LED is 45 ℃ as a result.
Measure by the having or not of method shown below insulating barrier cracking when being fixed in U font box body under the thermal conductivity of the thermal conductivity of the bendability under (1) room temperature, (2) insulating barrier, (3) heat conduction adhesive tape, (4) room temperature, (5) LED temperature when LED lights.
(1) bendability under the room temperature
Metal-base circuit board is processed into 10mm * 100mm, under 25 ± 1 ℃ temperature atmosphere, can form the face side and form the face opposition side to conductor circuit by both hands and be considered as well with the situation of radius of curvature bending more than 90 ° of 5mm with conductor circuit, when implementing bending, situations such as mould that needs use bending machining is used and press are considered as bad.
(2) thermal conductivity of insulating barrier
The metal forming and the conductor circuit of metal-base circuit board are removed, insulating barrier is processed into diameter 10mm * thick 100 μ m, try to achieve by laser flash method.
(3) thermal conductivity of thermal conductivity adhesive tape
Carry out stackedly with measuring the thickness of sample, be processed into 50mm * 120mm, try to achieve by quick thermal conductivity meter (QTM-500, capital of a country Electronics Industry Company system) with 10mm.
(4) the insulating barrier cracking has or not
The state insulating barrier down of 90 ° of bendings under the room temperature having or not by naked eyes of ftractureing observed.
LED temperature when (5) LED lights
The rated current that LED is added 450mA is lighted LED, measures the temperature of the LED solder portion after 15 minutes.
Table 4-1
The thermal conductivity of insulating barrier (W/mK) The thermal conductivity of adhesive tape (W/mK) Having or not of insulating barrier cracking when being fixed in U font box body LED temperature when LED lights (℃)
Embodiment 4-1 2.0 1.0 Do not have 45
Embodiment 4-2 4.0 1.0 Do not have 42
Embodiment 4-3 2.0 2.0 Do not have 42
Embodiment 4-4 4.0 2.0 Do not have 38
Comparative example 4-1 0.2 0.2 Do not have 65
Comparative example 4-2 2.0 0.2 Do not have 55
(embodiment 42)
On the Copper Foil of thick 35 μ m, form insulating barrier, be that the bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") of 207 170ppm and 30 quality % epoxide equivalents are that the epoxy resin of bisphenol A type epoxy resin (japan epoxy resin corporate system " the YL-7170 ") formation of 1200 ratio hydrogenation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % wherein with respect to 100 mass parts, the combination maximum particle diameter is below 75 μ m, average grain diameter is 21 μ m, Na ion concentration is that the aluminium oxide (clear and electrician's corporate system " CB-A20 ") and the average grain diameter of the spherical coarse grain of 10ppm is 0.7 μ m, the dense edge of sodium ion is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 66 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit Copper Foil of thick 35 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 60ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, the copper-clad surface of a side is formed mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.
Assigned position at the conductor circuit of metal-base circuit board is coated with solder(ing) paste (thousand live metal company system " M705 ") by silk screen printing, by reflow soldering LED (Ri Ya chemical company system " NFSWO36AT ") is installed.Then, the thermal conductivity that obtains in by embodiment 1 in the side that LED is not installed of metal-base circuit board is that the thermal conductivity adhesive tape of 1W/mK, thick 100 μ m is fixed in the box body of U font, obtains the led light source unit.
Under the environment of 23 ℃ of temperature, humidity 30%, on the led light source unit that obtains, connect stabilized power supply, by the electric current of 450mA, light LED.At this moment voltage is 11.7V.By thermocouple measurement by the temperature of the LED that lighted, the temperature of LED is 43 ℃ as a result.4-1 is shown in the results are shown in of estimating.Because the rising of the thermal conductivity of insulating barrier, the temperature of the LED that lights descends.Other rerum natura is also good.
(embodiment 4-3)
On the Copper Foil of thick 35 μ m, form insulating barrier, be that 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % in the epoxy resin integral wherein with respect to 100 mass parts, the combination maximum particle diameter is below 75 μ m, average grain diameter is 21 μ m, Na ion concentration is that the aluminium oxide (clear and electrician's corporate system " CB-A20 ") and the average grain diameter of the spherical coarse grain of 10ppm is 0.7 μ m, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit Copper Foil of thick 35 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 50ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, form mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.
Assigned position at the conductor circuit of metal-base circuit board is coated with solder(ing) paste (thousand live metal company system " M705 ") by silk screen printing, by reflow soldering LED (Ri Ya chemical company system " NFSWO36AT ") is installed.Then, be that the thermal conductivity adhesive tape of 2W/mK, thick 100 μ m is fixed in the box body of U font in the side that LED is not installed of metal-base circuit board by thermal conductivity described later, obtain the led light source unit.
Except filling 400 mass parts aluminium oxide (Denki Kagaku Kogyo kabushiki's system " DAW-10 "), the composition of the resin combination of thermal conductivity adhesive tape for obtaining among the embodiment 4-1 obtains by the operation shown in the embodiment 4-1.
Under the environment of 23 ℃ of temperature, humidity 30%, on the led light source unit that obtains, connect stabilized power supply, by the electric current of 450mA, light LED.At this moment voltage is 11.7V.By thermocouple measurement by the temperature of the LED that lighted, the temperature of LED is 42 ℃ as a result.
(embodiment 4-4)
On the Copper Foil of thick 35 μ m, form insulating barrier, be that the bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") of 207 170ppm and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % wherein with respect to 100 mass parts, the combination maximum particle diameter is below 75 μ m, average grain diameter is 21 μ m, Na ion concentration is that the aluminium oxide (clear and electrician's corporate system " CB-A20 ") and the average grain diameter of the spherical coarse grain of 10ppm is 0.7 μ m, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 66 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit Copper Foil of thick 35 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 60ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, the copper-clad surface of a side is formed mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.
Assigned position at the conductor circuit of metal-base circuit board is coated with solder(ing) paste (thousand live metal company system " M705 ") by silk screen printing, by reflow soldering LED (Ri Ya chemical company system " NFSWO36AT ") is installed.Then, the thermal conductivity that obtains in by embodiment 4-3 in the side that LED is not installed of metal-base circuit board is that the thermal conductivity adhesive tape of 2W/mK, thick 100 μ m is fixed in the box body of U font, obtains the led light source unit.
Under the environment of 23 ℃ of temperature, humidity 30%, on the led light source unit that obtains, connect stabilized power supply, by the electric current of 450mA, light LED.At this moment voltage is 11.6V.By thermocouple measurement by the temperature of the LED that lighted, the temperature of LED is 38 ℃ as a result.4-1 is shown in the results are shown in of estimating.Because the rising of the thermal conductivity of insulating barrier, the temperature of the LED that lights descends.Other rerum natura is also good.
(comparative example 4-1)
To on the Copper Foil of thick 35 μ m, being formed with the polyimide like flexible substrate (SUNX corporate system " R-F775 ") of the Copper Foil of thick 35 μ m across the polyimide film class insulating barrier of thick 50 μ m, position in regulation forms mask with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.
Assigned position at the conductor circuit of metal-base circuit board is coated with solder(ing) paste (thousand live metal company system " M705 ") by silk screen printing, by reflow soldering LED (Ri Ya chemical company system " NFSWO36AT ") is installed.Then, be fixed in the box body of U font by the adhesive tape (Sumitomo 3M corporate system " F-9469PC ") of thick 125 μ m, obtain the led light source unit in the side that LED is not installed of metal-base circuit board.
Under the environment of 23 ℃ of temperature, humidity 30%, on the led light source unit that obtains, connect stabilized power supply, by the electric current of 450mA, light LED.At this moment voltage is 12.5V.By thermocouple measurement by the temperature of the LED that lighted, the temperature of LED is 65 ℃ as a result.
(comparative example 4-2)
On the Copper Foil of thick 35 μ m, form insulating barrier, be that 207 bisphenol A type epoxy resin through hydrogenation (big Japanese ink corporate system " EXA-7015 ") and 30 quality % epoxide equivalents are that the epoxy resin of 1200 the bisphenol A type epoxy resin through hydrogenation (japan epoxy resin corporate system " YL-7170 ") formation adds the polypropyleneoxide diamine (mass ratio of Ha Le Star マ Application corporate system " D-400 " and " D-2000 " be 6: 4) of 48 mass parts as curing agent by the epoxide equivalent of 70 quality % in the epoxy resin integral wherein with respect to 100 mass parts, the combination maximum particle diameter is below 75 μ m, average grain diameter is 21 μ m, Na ion concentration is that the aluminium oxide (clear and electrician's corporate system " CB-A20 ") and the average grain diameter of the spherical coarse grain of 10ppm is 0.7 μ m, Na ion concentration is that (sumitomo chemical company system: AKP-15) mix with the condition that reaches 50 volume % (mass ratio of spherical coarse grain and spheroidal particle is 7: 3) in insulating barrier, the thickness after the curing is 100 μ m for the aluminium oxide of the spheroidal particle of 8ppm.Then, the fit Copper Foil of thick 35 μ m, make the insulating barrier hot curing by heating, the Metal Substrate substrate of Na ion concentration below 50ppm of the inorganic filler integral body of the chloride ion concentration that obtains the heat-curing resin integral body in the insulating barrier below 300ppm, in the insulating barrier.
For the Metal Substrate substrate, form mask in the position of regulation with resist, behind the etching Copper Foil, remove resist, form circuit, make metal-base circuit board.
Assigned position at the conductor circuit of metal-base circuit board is coated with solder(ing) paste (thousand live metal company system " M705 ") by silk screen printing, by reflow soldering LED (Ri Ya chemical company system " NFSWO36AT ") is installed.Then, be fixed in the box body of U font by the adhesive tape (Sumitomo 3M corporate system " F-9469PC ") of thick 125 μ m, obtain the led light source unit in the side that LED is not installed of metal-base circuit board.
Under the environment of 23 ℃ of temperature, humidity 30%, on the led light source unit that obtains, connect stabilized power supply, by the electric current of 450mA, light LED.At this moment voltage is 11.2V.By thermocouple measurement by the temperature of the LED that lighted, the temperature of LED is 55 ℃ as a result.
The possibility of utilizing on the industry
Metal-base circuit board of the present invention has heat radiation property and electrical insulating property, and also easily at room temperature bending under the state that the electric components such as the semiconductor element that needs heat radiation or impedance chip have been installed, so can realize being difficult to miniaturization or the slimming of the electronic equipment of the high heat generation electronic unit of installation realized in the past.
Namely, metal-base circuit board of the present invention can be used for the various uses field, the hydrid integrated circuit that for example joins with box body or the thermal component of complicated shape, because attach coating and implemented slit processing in the desired position and guaranteed crooked property or formed the layer with magnetic loss or had the led module of the layer of dielectric loss, for have the heat that will be produced by led light source reject heat to efficiently the substrate back side and make the temperature of LE D rise luminous efficiency little, LED descend be inhibited, brightness is high, the application of the LED light source cell of the feature of life-span length etc.
In addition, quote the announcement of all the elements of Japanese patent application 2006-030024 number of filing an application on February 7th, Japanese patent application 2006-013289 number 1 of filing an application on January 23rd, Japanese patent application 2005-120891 number 1 of filing an application on April 19th, 2005 and Japanese patent application 2006-87688 number specification, claims, accompanying drawing and the summary of filing an application on March 28th, 2006 here as specification of the present invention.

Claims (25)

1. metal-base circuit board, it is the circuit substrate that intersecting has insulating barrier and conductor circuit or metal forming, it is characterized in that, the thickness of conductor circuit or metal forming is 5 μ m～450 μ m, insulating barrier is formed by the firming body of the resin combination that contains inorganic filler and heat-curing resin, and the thickness of aforementioned dielectric layer is 9 μ m～300 μ m.
2. metal-base circuit board as claimed in claim 1 is characterized in that, at least 1 of through hole who is used for electric connecting conductor circuit or metal forming is at 0.0078mm 2More than.
3. metal-base circuit board as claimed in claim 1 or 2 is characterized in that, the thermal conductivity of insulating barrier is 1～4W/mK.
4. as each the described metal-base circuit board in the claim 1～3, it is characterized in that the vitrification point of insulating barrier is 0～40 ℃.
5. as each the described metal-base circuit board in the claim 1～4, it is characterized in that, insulating barrier is the firming body that contains the resin combination that 25～60 volume % heat-curing resins and remainder be made of the inorganic filler of Na ion concentration below 500ppm, and described inorganic filler is made of the spherical coarse grain of average grain diameter 5～40 μ m below the maximum particle diameter 75 μ m and the spheroidal particle of average grain diameter 0.3～3.0 μ m.
6. as each the described metal-base circuit board in the claim 1～5, it is characterized in that heat-curing resin contains through the Bisphenol F type of hydrogenation and/or the epoxy resin of A type.
7. metal-base circuit board as claimed in claim 6 is characterized in that, heat-curing resin contains the epoxy resin of the straight chain shape of epoxide equivalent 800～4000.
8. as claim 6 or 7 described metal-base circuit boards, it is characterized in that heat-curing resin contains the polyoxyalkylene polyamines as curing agent.
9. as each the described metal-base circuit board in the claim 6～8, it is characterized in that the chloride ion concentration in the heat-curing resin is below 500ppm.
10. as each the described metal-base circuit board in the claim 1～9, it is characterized in that at an arbitrary position with the bending of the radius of curvature of 1～5mm more than 90 ° the time, the proof voltage of each interlayer of conductor circuit or metal forming is more than 1.0kV with this circuit substrate.
11. as each the described metal-base circuit board in the claim 1～10, it is characterized in that, on metal forming, conductor circuit is set across insulating barrier, the coating that thickness is set again is 5 μ m～25 μ m forms, and at least a portion of coating is removed and the slit-shaped that forms is formed in the part that aforementioned conductor circuit is not set.
12. metal-base circuit board as claimed in claim 11 is characterized in that, the length that aforementioned slit is processed to respect to bending part is 50%～95%.
13., it is characterized in that the thickness of aforementioned coating is 5 μ m～25 μ m as claim 11 or 12 described metal-base circuit boards.
14. each the described metal-base circuit board as in the claim 11～13 is characterized in that, in the bending of aforementioned slit portion.
15. each the described metal-base circuit board as in the claim 11～14 is characterized in that, surface of insulating layer bends more than 90 ° with the radius of curvature of 0.1～0.5mm.
16. each the described metal-base circuit board as in the claim 11～15 is characterized in that, is laminated with layer with magnetic loss or the layer with dielectric loss on the surface of coating.
17. as each the described metal-base circuit board in the claim 11～16, it is characterized in that, layer with magnetic loss is formed at magnetic material more than 2 and organic binding material by aspect ratio, the content of aforementioned magnetic material is 30～70 volume %, and this thickness with layer of magnetic loss is 3 μ m～50 μ m.
18. each the described metal-base circuit board as in the claim 11～16 is characterized in that, the layer with magnetic loss is 20～110m by specific area 2The carbon dust of/g and organic binding material form, and the content of aforementioned carbon dust is 5～60 volume %, and this thickness with layer of magnetic loss is 3 μ m～50 μ m.
19. hybrid integrated circuit is characterized in that, uses each the described metal-base circuit board in the claim 1～10.
20.LED, it is characterized in that, be electrically connected to few 1 LED on the conductor circuit of the described metal-base circuit board of each in claim 11～18 and form.
21.LED light source cell, it is characterized in that, each described metal-base circuit board in the claim 1～18 is disposed at box surface by adhesive tape, and forms at the light-emitting diode that carries more than 1 on the conductor circuit of aforementioned metal base circuit board.
22. led light source as claimed in claim 21 unit is characterized in that, the thermal conductivity of adhesive tape is 1～2W/mK, and thickness is 50 μ m～150 μ m.
23., it is characterized in that adhesive tape contains the macromolecule of acrylic acid and/or methacrylic acid as claim 21 or 22 described led light source unit.
24. each the described led light source unit as in the claim 21～23 is characterized in that, adhesive tape contains 40～80 volume % thermal conductivity electric insulation agent.
25. each the described led light source unit as in the claim 21～24 is characterized in that, the maximum particle diameter of thermal conductivity electric insulation agent is below 45 μ m, and average grain diameter is 0.5～30 μ m.
CN2006800123857A 2005-04-19 2006-04-19 Metal-base circuit board, LED and led light source unit Active CN101161039B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2005120891A JP4672425B2 (en) 2005-04-19 2005-04-19 Metal base circuit board, manufacturing method thereof, and hybrid integrated circuit using the same
JP120891/2005 2005-04-19
JP2006013289A JP4459910B2 (en) 2006-01-23 2006-01-23 LED light source unit
JP013289/2006 2006-01-23
JP2006030024A JP4484830B2 (en) 2006-02-07 2006-02-07 Circuit board
JP030024/2006 2006-02-07
JP087688/2006 2006-03-28
JP2006087688A JP4913459B2 (en) 2006-03-28 2006-03-28 Metal base circuit board, method for manufacturing the same, and LED module
PCT/JP2006/308221 WO2006112478A1 (en) 2005-04-19 2006-04-19 Metal base circuit board, led, and led light source unit

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CN101161039B CN101161039B (en) 2010-12-29

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CN111734968A (en) * 2020-05-12 2020-10-02 南京天华科技研发有限公司 Mining emergency self-starting portable illuminating lamp based on photoinduction and manufacturing method thereof
TWI827112B (en) * 2022-06-22 2023-12-21 大陸商宏啟勝精密電子（秦皇島）有限公司 Folded circuit board and preparation method thereof

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