CN101160655B - Mim电容器及其制造方法 - Google Patents

Mim电容器及其制造方法 Download PDF

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Publication number
CN101160655B
CN101160655B CN200680012051.XA CN200680012051A CN101160655B CN 101160655 B CN101160655 B CN 101160655B CN 200680012051 A CN200680012051 A CN 200680012051A CN 101160655 B CN101160655 B CN 101160655B
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China
Prior art keywords
dielectric layer
top surface
core conductor
groove
conductive liner
Prior art date
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Expired - Lifetime
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CN200680012051.XA
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English (en)
Chinese (zh)
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CN101160655A (zh
Inventor
C·杨
L·A·克莱文格
T·J·达尔顿
L·C·苏
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN200680012051.XA 2005-04-15 2006-04-07 Mim电容器及其制造方法 Expired - Lifetime CN101160655B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/106,887 2005-04-15
US11/106,887 US7223654B2 (en) 2005-04-15 2005-04-15 MIM capacitor and method of fabricating same
PCT/US2006/012904 WO2006113158A2 (en) 2005-04-15 2006-04-07 Mim capacitor and method of fabricating same

Publications (2)

Publication Number Publication Date
CN101160655A CN101160655A (zh) 2008-04-09
CN101160655B true CN101160655B (zh) 2010-05-19

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Family Applications (1)

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CN200680012051.XA Expired - Lifetime CN101160655B (zh) 2005-04-15 2006-04-07 Mim电容器及其制造方法

Country Status (6)

Country Link
US (2) US7223654B2 (https=)
EP (1) EP1875499A4 (https=)
JP (1) JP5305901B2 (https=)
CN (1) CN101160655B (https=)
TW (1) TW200636814A (https=)
WO (1) WO2006113158A2 (https=)

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CN102420108B (zh) * 2011-06-15 2013-06-05 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容制造工艺及结构
CN102420106B (zh) * 2011-06-15 2013-12-04 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺
US8546914B2 (en) * 2011-07-19 2013-10-01 United Microelectronics Corp. Embedded capacitor structure and the forming method thereof
US8975910B2 (en) * 2012-04-27 2015-03-10 International Business Machines Corporation Through-silicon-via with sacrificial dielectric line
FR2994019B1 (fr) 2012-07-25 2016-05-06 Commissariat Energie Atomique Procede pour la realisation d'une capacite
US9455188B2 (en) * 2013-01-18 2016-09-27 Globalfoundries Inc. Through silicon via device having low stress, thin film gaps and methods for forming the same
JP6079279B2 (ja) * 2013-02-05 2017-02-15 三菱電機株式会社 半導体装置、半導体装置の製造方法
US9385177B2 (en) * 2013-10-31 2016-07-05 Stmicroelectronics, Inc. Technique for fabrication of microelectronic capacitors and resistors
CN104681403A (zh) * 2013-11-26 2015-06-03 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US9276057B2 (en) * 2014-01-27 2016-03-01 United Microelectronics Corp. Capacitor structure and method of manufacturing the same
US20160148868A1 (en) * 2014-11-25 2016-05-26 International Business Machines Corporation Precision intralevel metal capacitor fabrication
US9620582B2 (en) 2015-01-27 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal (MIM) capacitors and forming methods
US9818689B1 (en) * 2016-04-25 2017-11-14 Globalfoundries Inc. Metal-insulator-metal capacitor and methods of fabrication
CN105963857B (zh) * 2016-05-26 2019-07-05 中国科学院微电子研究所 一种神经电极结构及其制造方法
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CN109037444B (zh) * 2017-06-09 2022-01-04 华邦电子股份有限公司 电容器结构及其制造方法
US10236206B2 (en) * 2017-07-03 2019-03-19 Globalfoundries Inc. Interconnects with hybrid metallization
CN107758607A (zh) * 2017-09-29 2018-03-06 湖南大学 一种高深宽比高保形纳米级正型结构的制备方法
US20190157213A1 (en) * 2017-11-20 2019-05-23 Globalfoundries Inc. Semiconductor structure with substantially straight contact profile
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US10650978B2 (en) * 2017-12-15 2020-05-12 Micron Technology, Inc. Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb
JP7179634B2 (ja) * 2019-02-07 2022-11-29 株式会社東芝 コンデンサ及びコンデンサモジュール
CN111834332B (zh) * 2019-04-16 2022-11-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102019214567B4 (de) 2019-09-24 2023-11-02 Zf Friedrichshafen Ag Verfahren und Vorrichtung zum Betreiben eines gepulsten Lidarsensors
US11437312B2 (en) 2020-02-07 2022-09-06 International Business Machines Corporation High performance metal insulator metal capacitor
EP3901997A1 (en) * 2020-04-22 2021-10-27 Murata Manufacturing Co., Ltd. Electrical device for characterizing a deposition step such as atomic layer deposition (ald), and corresponding methods of fabricating and characterizing
US11715594B2 (en) 2021-05-27 2023-08-01 International Business Machines Corporation Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch
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US6028362A (en) * 1997-05-12 2000-02-22 Yamaha Corporation Damascene wiring with flat surface
US6452251B1 (en) * 2000-03-31 2002-09-17 International Business Machines Corporation Damascene metal capacitor
CN1459809A (zh) * 2002-05-22 2003-12-03 联华电子股份有限公司 一种金属－绝缘层－金属电容结构及其制作方法
US6670237B1 (en) * 2002-08-01 2003-12-30 Chartered Semiconductor Manufacturing Ltd. Method for an advanced MIM capacitor
CN1639861A (zh) * 2001-08-29 2005-07-13 自由度半导体公司 用于制作mim电容器的方法

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Patent Citations (6)

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US5879985A (en) * 1997-03-26 1999-03-09 International Business Machines Corporation Crown capacitor using a tapered etch of a damascene lower electrode
US6028362A (en) * 1997-05-12 2000-02-22 Yamaha Corporation Damascene wiring with flat surface
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Also Published As

Publication number Publication date
US20060234443A1 (en) 2006-10-19
US20070117313A1 (en) 2007-05-24
JP2008537335A (ja) 2008-09-11
WO2006113158A3 (en) 2007-03-01
WO2006113158A2 (en) 2006-10-26
JP5305901B2 (ja) 2013-10-02
US7223654B2 (en) 2007-05-29
CN101160655A (zh) 2008-04-09
EP1875499A2 (en) 2008-01-09
US7821051B2 (en) 2010-10-26
TW200636814A (en) 2006-10-16
EP1875499A4 (en) 2009-11-04

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Effective date of registration: 20171106

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Patentee before: Core USA second LLC

Effective date of registration: 20171106

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Granted publication date: 20100519