CN101151702B - 用于等离子体处理设备的气体喷头盘 - Google Patents
用于等离子体处理设备的气体喷头盘 Download PDFInfo
- Publication number
- CN101151702B CN101151702B CN2006800106565A CN200680010656A CN101151702B CN 101151702 B CN101151702 B CN 101151702B CN 2006800106565 A CN2006800106565 A CN 2006800106565A CN 200680010656 A CN200680010656 A CN 200680010656A CN 101151702 B CN101151702 B CN 101151702B
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- Prior art keywords
- shower plate
- gas shower
- gas
- cutting out
- out section
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims abstract description 37
- 238000005520 cutting process Methods 0.000 claims description 43
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 239000000919 ceramic Substances 0.000 claims description 19
- 238000009832 plasma treatment Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005108330 | 2005-04-05 | ||
JP108330/2005 | 2005-04-05 | ||
PCT/JP2006/307521 WO2006107113A1 (en) | 2005-04-05 | 2006-04-04 | Strain relief cutouts in shower plate made from porous ceramic |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101151702A CN101151702A (zh) | 2008-03-26 |
CN101151702B true CN101151702B (zh) | 2010-05-19 |
Family
ID=36604180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800106565A Expired - Fee Related CN101151702B (zh) | 2005-04-05 | 2006-04-04 | 用于等离子体处理设备的气体喷头盘 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8757090B2 (zh) |
EP (1) | EP1869691B1 (zh) |
JP (1) | JP4746620B2 (zh) |
KR (1) | KR101198428B1 (zh) |
CN (1) | CN101151702B (zh) |
DE (1) | DE602006011140D1 (zh) |
MY (1) | MY139985A (zh) |
TW (1) | TW200644119A (zh) |
WO (1) | WO2006107113A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4746620B2 (ja) * | 2005-04-05 | 2011-08-10 | パナソニック株式会社 | プラズマ処理装置用のガスシャワープレート |
JP4654738B2 (ja) * | 2005-04-05 | 2011-03-23 | パナソニック株式会社 | プラズマ処理装置 |
JP4863074B2 (ja) * | 2006-12-05 | 2012-01-25 | 三菱マテリアル株式会社 | 耐割れ性に優れたプラズマエッチング用シリコン電極板 |
CN101740298B (zh) * | 2008-11-07 | 2012-07-25 | 东京毅力科创株式会社 | 等离子体处理装置及其构成部件 |
JP5184410B2 (ja) * | 2009-03-19 | 2013-04-17 | シャープ株式会社 | カバープレートユニット、及びそれを備えた気相成長装置 |
JP5578865B2 (ja) * | 2009-03-25 | 2014-08-27 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置のカバー固定具およびカバー固定装置 |
US20120177546A1 (en) * | 2009-09-30 | 2012-07-12 | Koninklijke Philips Electronics N.V. | Gas concentration arrangement |
US20140116339A1 (en) * | 2011-06-11 | 2014-05-01 | Tokyo Electron Limited | Process gas diffuser assembly for vapor deposition system |
US20130284092A1 (en) * | 2012-04-25 | 2013-10-31 | Applied Materials, Inc. | Faceplate having regions of differing emissivity |
US9102514B2 (en) * | 2013-03-22 | 2015-08-11 | Freescale Semiconductor, Inc | Inhibiting propagation of surface cracks in a MEMS Device |
CN103266310B (zh) * | 2013-05-24 | 2015-05-20 | 上海和辉光电有限公司 | 分散板及具有该分散板的镀膜装置 |
DE102014118704A1 (de) | 2014-01-10 | 2015-07-16 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors mit gewichtsverminderter Gasaustrittsplatte |
US11600517B2 (en) * | 2018-08-17 | 2023-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Screwless semiconductor processing chambers |
US11901162B2 (en) | 2019-01-07 | 2024-02-13 | Ulvac, Inc. | Vacuum processing apparatus and method of cleaning vacuum processing apparatus |
CN110285379A (zh) * | 2019-06-26 | 2019-09-27 | 广州市浩洋电子股份有限公司 | 一种防高温变形的效果盘 |
CN112530774B (zh) * | 2019-09-17 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备 |
JP7282646B2 (ja) * | 2019-09-26 | 2023-05-29 | 株式会社アルバック | 真空処理装置 |
JP7497335B2 (ja) | 2021-12-28 | 2024-06-10 | クアーズテック合同会社 | リング状プレート |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US6086710A (en) * | 1995-04-07 | 2000-07-11 | Seiko Epson Corporation | Surface treatment apparatus |
CN1375575A (zh) * | 2001-03-19 | 2002-10-23 | 株式会社Apex | 化学气相沉积设备 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2987143A (en) * | 1958-10-16 | 1961-06-06 | Goodyear Tire & Rubber | Reduced thermally surface stressed brake |
US3211447A (en) * | 1962-09-19 | 1965-10-12 | Brown Fintube Co | Apparatus for holding fin members during bonding |
US3273232A (en) * | 1965-10-21 | 1966-09-20 | Clady J Royer | Method for replacing worn or fractured teeth on large gear rings |
US4909256A (en) * | 1985-02-11 | 1990-03-20 | The United States Of America, As Represented By The Secretary Of The Army | Transdermal vapor collection method and apparatus |
US5271940A (en) * | 1989-09-14 | 1993-12-21 | Cygnus Therapeutic Systems | Transdermal delivery device having delayed onset |
US5180467A (en) * | 1990-08-08 | 1993-01-19 | Vlsi Technology, Inc. | Etching system having simplified diffuser element removal |
US5516581A (en) * | 1990-12-20 | 1996-05-14 | Minnesota Mining And Manufacturing Company | Removable adhesive tape |
US5882411A (en) | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US6051286A (en) * | 1997-02-12 | 2000-04-18 | Applied Materials, Inc. | High temperature, high deposition rate process and apparatus for depositing titanium layers |
US5783080A (en) * | 1997-02-25 | 1998-07-21 | Hsieh; Chin-San | Plate filter with high odor and toxin removing and water absorbing capacity and its manufacturing processes |
JP3480271B2 (ja) | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | 熱処理装置のシャワーヘッド構造 |
US6364957B1 (en) * | 1997-10-09 | 2002-04-02 | Applied Materials, Inc. | Support assembly with thermal expansion compensation |
US6444040B1 (en) * | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
JP2002231638A (ja) | 2001-01-31 | 2002-08-16 | Kyocera Corp | シャワーヘッド及びその製造方法 |
JP2003007682A (ja) | 2001-06-25 | 2003-01-10 | Matsushita Electric Ind Co Ltd | プラズマ処理装置用の電極部材 |
JP2003282462A (ja) | 2002-03-27 | 2003-10-03 | Kyocera Corp | シャワープレートとその製造方法及びそれを用いたシャワーヘッド |
US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
JP2007500794A (ja) * | 2003-05-16 | 2007-01-18 | エスブイティー アソーシエイツ インコーポレイテッド | 薄膜蒸着エバポレーター |
JP4654738B2 (ja) * | 2005-04-05 | 2011-03-23 | パナソニック株式会社 | プラズマ処理装置 |
JP4746620B2 (ja) * | 2005-04-05 | 2011-08-10 | パナソニック株式会社 | プラズマ処理装置用のガスシャワープレート |
-
2006
- 2006-04-04 JP JP2007525093A patent/JP4746620B2/ja active Active
- 2006-04-04 DE DE602006011140T patent/DE602006011140D1/de active Active
- 2006-04-04 EP EP06731468A patent/EP1869691B1/en not_active Expired - Fee Related
- 2006-04-04 US US11/887,771 patent/US8757090B2/en active Active
- 2006-04-04 WO PCT/JP2006/307521 patent/WO2006107113A1/en active Application Filing
- 2006-04-04 CN CN2006800106565A patent/CN101151702B/zh not_active Expired - Fee Related
- 2006-04-04 KR KR1020077021576A patent/KR101198428B1/ko not_active IP Right Cessation
- 2006-04-04 TW TW095111941A patent/TW200644119A/zh unknown
- 2006-04-05 MY MYPI20061548A patent/MY139985A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US6086710A (en) * | 1995-04-07 | 2000-07-11 | Seiko Epson Corporation | Surface treatment apparatus |
CN1375575A (zh) * | 2001-03-19 | 2002-10-23 | 株式会社Apex | 化学气相沉积设备 |
Also Published As
Publication number | Publication date |
---|---|
JP2008535203A (ja) | 2008-08-28 |
US8757090B2 (en) | 2014-06-24 |
US20090145359A1 (en) | 2009-06-11 |
TW200644119A (en) | 2006-12-16 |
DE602006011140D1 (de) | 2010-01-28 |
EP1869691B1 (en) | 2009-12-16 |
KR101198428B1 (ko) | 2012-11-06 |
WO2006107113A1 (en) | 2006-10-12 |
EP1869691A1 (en) | 2007-12-26 |
KR20080002767A (ko) | 2008-01-04 |
MY139985A (en) | 2009-11-30 |
JP4746620B2 (ja) | 2011-08-10 |
CN101151702A (zh) | 2008-03-26 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: KROSAKI HARIMA CORPORATION Effective date: 20120517 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120517 Address after: Osaka Japan Patentee after: Matsushita Electric Industrial Co., Ltd. Address before: Osaka Japan Co-patentee before: Krosaki Harima Corporation Patentee before: Matsushita Electric Industrial Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100519 Termination date: 20160404 |