CN108231657A - 一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 - Google Patents
一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 Download PDFInfo
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Abstract
本发明公开了一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法,包括托盘本体,所述托盘本体的上表面设有用于固定蓝宝石衬底置的定位凹槽,铝托盘本体的上表面和定位凹槽的表面涂覆有导热介质层,定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米,托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米‑5毫米。本发明提高了操作的便利性,有效地保证了PSS工艺制程稳定性和产品良率。
Description
技术领域
本发明属于半导体加工技术领域,具体地说是一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法。
背景技术
图形化蓝宝石衬底(Patterned Sapphire Substrates, PSS)是产业界所采用的一种提高GaN基LED器件发光效率的有效方法。目前,PSS主要是由光刻技术结合等离子体(ICP)干法刻蚀技术制备实现。通常,在对蓝宝石衬底进行等离子体干法刻蚀过程中,一般使用托盘装置来固定、支撑并传送蓝宝石衬底进入ICP设备腔体内,避免蓝宝石衬底在刻蚀过程中出现移动或错位现象。此外,在整个工艺过程中,托盘充当电极系统的下电极,通过接入射频(RF)电源,RF电源会在蓝宝石衬底表面上形成直流偏压(DC Bias),这样促成等离子体对蓝宝石的刻蚀反应。同时,ICP设备系统通过控制托盘气孔的He气流量来实现对蓝宝石衬底表面温度的调控,以保证衬底表面图形结构的均匀性。
传统的托盘装置是,金属铝托盘1结合盖板2系统,如图1和2所示。待刻蚀的蓝宝石衬底放置在铝托盘1上,并用铝或石英材质的盖板2结合固定螺丝4压住衬底3边缘。铝托盘1底部均有数个He气流孔5,在刻蚀过程中,惰性气体氦气(He)通过气流孔填充蓝宝石衬底2与托盘1之间的缝隙,蓝宝石衬底2背面边沿密封圈6的作用在于密封蓝宝石衬底与托盘缝隙间的He气,以免He气进入ICP腔体内而影响刻蚀速率和均匀性。另外,托盘与ICP腔体内的卡盘承载系统之间的间隙也是由He气填充,He气的作用是将晶片表面所产生的热量传导至铝托盘上,并及时散去,从而起到控制蓝宝石衬底表面温度和刻蚀均匀性的效果。
上述托盘装置至少存在以下四个方面的缺点:
(1)由于蓝宝石衬底边沿与盖板相邻,且盖板的压爪直接覆盖在衬底表面,等离子体电场分布在刻蚀过程中受到盖板边缘效应的影响,导致PSS成品边缘区域的微结构图形发生畸变,图形的底径之间连接在一起,形成较宽的无效过渡区(如图3所示),直接影响PSS外延后边缘区域LED芯片的利用率;
(2)在将蓝宝石衬底装载到托盘装置的过程中,需要经过密封圈固定、蓝宝石与托盘凸台对准、盖板安放和固定螺丝拧紧等一系列动作,操作过程较为复杂,精度要求高,对操作人员的要求极高,容易因人为失误而导致良率损失;
(3)由于盖板是裸露在ICP腔体内,在刻蚀过程中持续被损耗,导致盖板使用寿命缩短,不利于PSS产品的成本控制,另外,盖板的使用周期的后期因压爪磨损、变形而导致良率下降的概率逐渐增大;
(4)在整个蓝宝石衬底的刻蚀过程中,对托盘装置的配件部分要求极高,密封圈的材质与尺寸偏差、盖板压爪大小是影响He气泄漏的关联因素,He气泄漏将会引起晶片局部温度过高,从而导致晶片表面微结构图形畸变,现有技术的铝托盘系统对装片环节和密封性要求非常高,可操作的工艺窗口窄。
发明内容
本发明要解决的技术问题是提供一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法,提高了操作的便利性,有效地保证了PSS工艺制程稳定性和产品良率。
为了解决上述技术问题,本发明采取以下技术方案:
一种图形化蓝宝石衬底刻蚀用的托盘装置,包括托盘本体,所述托盘本体的上表面设有用于固定蓝宝石衬底置的定位凹槽,铝托盘本体的上表面和定位凹槽的表面涂覆有导热介质层。
所述定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米。
所述导热介质层的厚度为10微米—100微米。
所述导热介质层的材质为热固化有机聚合物,它的导热系数在0.15W/m.K—10W/m.K之间,热固化温度在30℃—100℃之间。
所述导热介质材料包括环氧树脂类、酚醛树脂类、硅胶或PMMA有机聚合物。
所述托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米-5毫米。
一种图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,包括以下步骤:
步骤1,对托盘进行清洗、烘干备用;
步骤2,将液态导热介质喷涂到铝托盘上表面,在托盘的上表面形成均匀的液态导热介质层;
步骤3,将带有掩膜图形的蓝宝石衬底放入铝托盘的定位凹槽中,然后将托盘放入真空烘箱中,进行热固化处理,液态导热介质层转变成固态导热介质层,并将蓝宝石衬底固定在定位凹槽处;
步骤4,除去托盘边缘的固态导热介质层,放入ICP设备预腔室,待刻蚀。
所述步骤1具体包括:将托盘放入去离子水中进行超声波清洗,并用毛刷对定位凹槽处进行刷洗,清洗时间为15分钟-30分钟;用氮气枪吹扫托盘表面,然后放入高温烘箱,烘烤温度为80℃-100℃,烘烤时间为10分钟-20分钟。
所述步骤3具体包括:将托盘水平放置在装载台上,采用真空吸笔将带有光刻胶掩膜图案的蓝宝石衬底逐一放入托盘的定位凹槽中,然后将托盘平移放置到真空烘箱中,进行抽真空,保持烘箱内压强为5×103 Pa-1×104 Pa,静置5分钟-10分钟,然后将烘箱温度逐步从室温升高至90℃,升温时间控制在5分钟-10分钟,达到90℃后,再静置5分钟-10分钟,此时,液态导热介质层转换成固态导热介质层。
本发明中的托盘装置具有以下有益效果:
1)结构简单,成本低廉,易于加工制作。不需要在托盘表面制作精细的He气通道,不需要制作与之相匹配的盖板,从而使得加工成本变得更加低廉;此外,在使用过程中,铝托盘表面受到导热介质层的保护,使用寿命更长,从而使得ICP刻蚀端的耗材成本降低90%以上。
2)由于免除了盖板,蓝宝石衬底在刻蚀过程中不存在边缘效应的影响,保证了刻蚀后PSS成品片边缘不存在微结构图形畸变的过渡区,整体PSS品质得到显著提升。
3)在刻蚀过程中,蓝宝石衬底表面产生的热量直接通过导热介质层传到铝托盘并被瞬间散去,使得蓝宝石表面的实时散热效果更明显,刻蚀均匀性更佳;另外,托盘装置彻底消除了He气泄漏问题,保证了PSS在生产制程的稳定性,同时保证了PSS产品批次间一致性和较高的良率水平。
本发明中的装载方法操作流程简单,操作窗口大,对生产人员作业水平要求低,有效地保障了生产制程的稳定性。
附图说明
附图1为现有技术的托盘装置的俯视示意图;
附图2为现有技术中的托盘装置的剖面示意图;
附图3为采用现有技术的托盘装置所得到的4寸PSS成品片的光学图像,其中插入图为PSS边缘区域的放大图像;
附图4为本发明得到的托盘装置的俯视示意图;
附图5为本发明得到的托盘装置的横截面示意图;
附图6为采用本发明托盘装置得到的4寸PSS成品片的光学图像,其中插入图为PSS边缘区域的放大图像;
附图7 为本发明蓝宝石衬底装载方法的工艺流程示意图。
具体实施方式
为能进一步了解本发明的特征、技术手段以及所达到的具体目的、功能,下面结合附图与具体实施方式对本发明作进一步详细描述。
如附图4、5和7所示,本发明揭示了一种图形化蓝宝石衬底刻蚀用的托盘装置,包括托盘本体1,所述托盘本体1的上表面设有用于固定蓝宝石衬底3置的定位凹槽4,铝托盘本体1的上表面和定位凹槽的表面涂覆有导热介质层2,该导热介质层经固化后形成为固态性质。将图形化蓝宝石衬底装载在该定位凹槽中与导热介质固合。
所述定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米。
所述导热介质层的厚度为10微米—100微米。导热介质层的材质为热固化有机聚合物,它的导热系数在0.15W/m.K—10W/m.K之间,热固化温度在30℃—100℃之间。导热介质材料包括环氧树脂类、酚醛树脂类、硅胶、PMMA等有机聚合物。
另外,所述托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米-5毫米。通过该下沉区与ICP设备腔体内卡盘接触,用来固定托盘本体在ICP腔体内的位置。并且将该下沉区的导热介质层刮除,该部分不需要导热介质层的存在。
通过上述结构的托盘装置,不需要在托盘本体上设置He气通道和盖板,结构更加简单,降低制造成本。
另外,如7所示,本发明还揭示了一种图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,包括以下步骤:
步骤1,对托盘1进行清洗、烘干备用。具体为:将托盘放入去离子水中进行超声波清洗,并用毛刷对定位凹槽处进行刷洗,清洗时间为15分钟-30分钟;用氮气枪吹扫托盘表面,然后放入高温烘箱,烘烤温度为80℃-100℃,烘烤时间为10分钟-20分钟。
步骤2,将液态导热介质喷涂到铝托盘上表面,在托盘的上表面形成均匀的液态导热介质层。采用自动喷涂设备,对喷涂参数进行优化,使液体导热介质均匀覆盖整个托盘表面,涂层厚度范围控制在10微米-100微米。
步骤3,将带有掩膜图形的蓝宝石3衬底放入铝托盘的定位凹槽4中,然后将托盘放入真空烘箱中,进行热固化处理,液态导热介质层转变成固态导热介质层,并将蓝宝石衬底固定在定位凹槽处。具体为:将托盘水平放置在装载台上,采用真空吸笔将带有光刻胶掩膜图案的蓝宝石衬底逐一放入托盘的定位凹槽中,然后将托盘平移放置到真空烘箱中,进行抽真空,保持烘箱内压强为5×103 Pa-1×104 Pa,静置5分钟-10分钟,然后将烘箱温度逐步从室温升高至90℃,升温时间控制在5分钟-10分钟,达到90℃后,再静置5分钟-10分钟,此时,液态导热介质层转换成固态导热介质层。
步骤4,除去托盘1边缘的固态导热介质层,放入ICP设备预腔室,待刻蚀。托盘边缘无需导热介质层存在,因此将该部分的导热介质层刮除。
采用本装载方法刻蚀后,如附图6所示,形成PSS边缘的过渡区较小,提升了品质。
需要说明的是,以上仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,但是凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (9)
1.一种图形化蓝宝石衬底刻蚀用的托盘装置,包括托盘本体,其特征在于,所述托盘本体的上表面设有用于固定蓝宝石衬底置的定位凹槽,铝托盘本体的上表面和定位凹槽的表面涂覆有导热介质层。
2.根据权利要求1所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米。
3.根据权利要求2所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述导热介质层的厚度为10微米—100微米。
4.根据权利要求3所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述导热介质层的材质为热固化有机聚合物,它的导热系数在0.15W/m.K—10W/m.K之间,热固化温度在30℃—100℃之间。
5.根据权利要求4所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述导热介质材料包括环氧树脂类、酚醛树脂类、硅胶或PMMA有机聚合物。
6.根据权利要求5所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米-5毫米。
7.一种根据权利要求1-6中任一项所述的图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,其特征在于,所述方法包括以下步骤:
步骤1,对托盘进行清洗、烘干备用;
步骤2,将液态导热介质喷涂到铝托盘上表面,在托盘的上表面形成均匀的液态导热介质层;
步骤3,将带有掩膜图形的蓝宝石衬底放入铝托盘的定位凹槽中,然后将托盘放入真空烘箱中,进行热固化处理,液态导热介质层转变成固态导热介质层,并将蓝宝石衬底固定在定位凹槽处;
步骤4,除去托盘边缘的固态导热介质层,放入ICP设备预腔室,待刻蚀。
8.根据权利要求7所述的图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,其特征在于,所述步骤1具体包括:将托盘放入去离子水中进行超声波清洗,并用毛刷对定位凹槽处进行刷洗,清洗时间为15分钟-30分钟;用氮气枪吹扫托盘表面,然后放入高温烘箱,烘烤温度为80℃-100℃,烘烤时间为10分钟-20分钟。
9.根据权利要求8所述的图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,其特征在于,所述步骤3具体包括:将托盘水平放置在装载台上,采用真空吸笔将带有光刻胶掩膜图案的蓝宝石衬底逐一放入托盘的定位凹槽中,然后将托盘平移放置到真空烘箱中,进行抽真空,保持烘箱内压强为5×103 Pa-1×104 Pa,静置5分钟-10分钟,然后将烘箱温度逐步从室温升高至90℃,升温时间控制在5分钟-10分钟,达到90℃后,再静置5分钟-10分钟,此时,液态导热介质层转换成固态导热介质层。
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