CN108231657B - 一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 - Google Patents
一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 Download PDFInfo
- Publication number
- CN108231657B CN108231657B CN201711398828.7A CN201711398828A CN108231657B CN 108231657 B CN108231657 B CN 108231657B CN 201711398828 A CN201711398828 A CN 201711398828A CN 108231657 B CN108231657 B CN 108231657B
- Authority
- CN
- China
- Prior art keywords
- tray
- sapphire substrate
- conducting medium
- heat
- medium layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 54
- 239000010980 sapphire Substances 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000005530 etching Methods 0.000 title claims abstract description 30
- 238000011068 loading method Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 238000013007 heat curing Methods 0.000 claims description 8
- 229920000620 organic polymer Polymers 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 5
- 230000001680 brushing effect Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 238000013519 translation Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- UGFMBZYKVQSQFX-UHFFFAOYSA-N para-methoxy-n-methylamphetamine Chemical compound CNC(C)CC1=CC=C(OC)C=C1 UGFMBZYKVQSQFX-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本发明公开了一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法,包括托盘本体,所述托盘本体的上表面设有用于固定蓝宝石衬底置的定位凹槽,铝托盘本体的上表面和定位凹槽的表面涂覆有导热介质层,定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米,托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米‑5毫米。本发明提高了操作的便利性,有效地保证了PSS工艺制程稳定性和产品良率。
Description
技术领域
本发明属于半导体加工技术领域,具体地说是一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法。
背景技术
图形化蓝宝石衬底(Patterned Sapphire Substrates, PSS)是产业界所采用的一种提高GaN基LED器件发光效率的有效方法。目前,PSS主要是由光刻技术结合等离子体(ICP)干法刻蚀技术制备实现。通常,在对蓝宝石衬底进行等离子体干法刻蚀过程中,一般使用托盘装置来固定、支撑并传送蓝宝石衬底进入ICP设备腔体内,避免蓝宝石衬底在刻蚀过程中出现移动或错位现象。此外,在整个工艺过程中,托盘充当电极系统的下电极,通过接入射频(RF)电源,RF电源会在蓝宝石衬底表面上形成直流偏压(DC Bias),这样促成等离子体对蓝宝石的刻蚀反应。同时,ICP设备系统通过控制托盘气孔的He气流量来实现对蓝宝石衬底表面温度的调控,以保证衬底表面图形结构的均匀性。
传统的托盘装置是,金属铝托盘1结合盖板2系统,如图1和2所示。待刻蚀的蓝宝石衬底放置在铝托盘1上,并用铝或石英材质的盖板2结合固定螺丝4压住衬底3边缘。铝托盘1底部均有数个He气流孔5,在刻蚀过程中,惰性气体氦气(He)通过气流孔填充蓝宝石衬底3与托盘1之间的缝隙,蓝宝石衬底3背面边沿密封圈6的作用在于密封蓝宝石衬底与托盘缝隙间的He气,以免He气进入ICP腔体内而影响刻蚀速率和均匀性。另外,托盘与ICP腔体内的卡盘承载系统之间的间隙也是由He气填充,He气的作用是将晶片表面所产生的热量传导至铝托盘上,并及时散去,从而起到控制蓝宝石衬底表面温度和刻蚀均匀性的效果。
上述托盘装置至少存在以下四个方面的缺点:
(1)由于蓝宝石衬底边沿与盖板相邻,且盖板的压爪直接覆盖在衬底表面,等离子体电 场分布在刻蚀过程中受到盖板边缘效应的影响,导致PSS成品边缘区域的微结构图形发生 畸变,图形的底径之间连接在一起,形成较宽的无效过渡区(如图3所示),直接影响PSS外延 后边缘区域LED芯片的利用率;
(2)在将蓝宝石衬底装载到托盘装置的过程中,需要经过密封圈固定、蓝宝石与托盘凸 台对准、盖板安放和固定螺丝拧紧等一系列动作,操作过程较为复杂,精度要求高,对操作 人员的要求极高,容易因人为失误而导致良率损失;
(3)由于盖板是裸露在ICP腔体内,在刻蚀过程中持续被损耗,导致盖板使用寿命缩短, 不利于PSS产品的成本控制,另外,盖板的使用周期的后期因压爪磨损、变形而导致良率下 降的概率逐渐增大;
(4)在整个蓝宝石衬底的刻蚀过程中,对托盘装置的配件部分要求极高,密封圈的材质 与尺寸偏差、盖板压爪大小是影响He气泄漏的关联因素,He气泄漏将会引起晶片局部温度 过高,从而导致晶片表面微结构图形畸变,现有技术的铝托盘系统对装片环节和密封性要 求非常高,可操作的工艺窗口窄。
发明内容
本发明要解决的技术问题是提供一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法,提高了操作的便利性,有效地保证了PSS工艺制程稳定性和产品良率。
为了解决上述技术问题,本发明采取以下技术方案:
一种图形化蓝宝石衬底刻蚀用的托盘装置,包括托盘本体,所述托盘本体的上表面设 有用于固定蓝宝石衬底置的定位凹槽,铝托盘本体的上表面和定位凹槽的表面涂覆有导热 介质层。
所述定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米。
所述导热介质层的厚度为10微米—100微米。
所述导热介质层的材质为热固化有机聚合物,它的导热系数在0.15W/m.K—10W/m.K之间,热固化温度在30℃—100℃之间。
所述导热介质材料包括环氧树脂类、酚醛树脂类、硅胶或PMMA有机聚合物。
所述托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米-5毫米。
一种图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,包括以下步骤:
步骤1,对托盘进行清洗、烘干备用;
步骤2,将液态导热介质喷涂到铝托盘上表面,在托盘的上表面形成均匀的液态导热介 质层;
步骤3,将带有掩膜图形的蓝宝石衬底放入铝托盘的定位凹槽中,然后将托盘放入真空 烘箱中,进行热固化处理,液态导热介质层转变成固态导热介质层,并将蓝宝石衬底固定在 定位凹槽处;
步骤4,除去托盘边缘的固态导热介质层,放入ICP设备预腔室,待刻蚀。
所述步骤1具体包括:将托盘放入去离子水中进行超声波清洗,并用毛刷对定位凹槽处进行刷洗,清洗时间为15分钟-30分钟;用氮气枪吹扫托盘表面,然后放入高温烘箱,烘烤温度为80℃-100℃,烘烤时间为10分钟-20分钟。
所述步骤3具体包括:将托盘水平放置在装载台上,采用真空吸笔将带有光刻胶掩膜图案的蓝宝石衬底逐一放入托盘的定位凹槽中,然后将托盘平移放置到真空烘箱中,进行抽真空,保持烘箱内压强为,静置5分钟-10分钟,然后将烘箱温度逐步从室温升高至90℃,升温时间控制在5分钟-10分钟,达到90℃后,再静置5分钟-10分钟,此时,液态导热介质层转换成固态导热介质层。
本发明中的托盘装置具有以下有益效果:
1)结构简单,成本低廉,易于加工制作。不需要在托盘表面制作精细的He气通道,不需 要制作与之相匹配的盖板,从而使得加工成本变得更加低廉;此外,在使用过程中,铝托盘 表面受到导热介质层的保护,使用寿命更长,从而使得ICP刻蚀端的耗材成本降低90%以上。
2)由于免除了盖板,蓝宝石衬底在刻蚀过程中不存在边缘效应的影响,保证了刻蚀后PSS成品片边缘不存在微结构图形畸变的过渡区,整体PSS品质得到显著提升。
3)在刻蚀过程中,蓝宝石衬底表面产生的热量直接通过导热介质层传到铝托盘并被瞬间散去,使得蓝宝石表面的实时散热效果更明显,刻蚀均匀性更佳;另外,托盘装置彻底消除了He气泄漏问题,保证了PSS在生产制程的稳定性,同时保证了PSS产品批次间一致性和较高的良率水平。
本发明中的装载方法操作流程简单,操作窗口大,对生产人员作业水平要求低,有效地保障了生产制程的稳定性。
附图说明
附图1为现有技术的托盘装置的俯视示意图;
附图2为现有技术中的托盘装置的剖面示意图;
附图3为采用现有技术的托盘装置所得到的4寸PSS成品片的光学图像,其中插入图为 PSS边缘区域的放大图像;
附图4为本发明得到的托盘装置的俯视示意图;
附图5为本发明得到的托盘装置的横截面示意图;
附图6为采用本发明托盘装置得到的4寸PSS成品片的光学图像,其中插入图为PSS边缘 区域的放大图像;
附图7 为本发明蓝宝石衬底装载方法的工艺流程示意图。
具体实施方式
为能进一步了解本发明的特征、技术手段以及所达到的具体目的、功能,下面结合附图与具体实施方式对本发明作进一步详细描述。
如附图4、5和7所示,本发明揭示了一种图形化蓝宝石衬底刻蚀用的托盘装置,包括托盘本体1,所述托盘本体1的上表面设有用于固定蓝宝石衬底3置的定位凹槽7,铝托盘本体1的上表面和定位凹槽的表面涂覆有导热介质层8,该导热介质层经固化后形成为固态性质。将图形化蓝宝石衬底装载在该定位凹槽中与导热介质固合。
所述定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米。
所述导热介质层的厚度为10微米—100微米。导热介质层的材质为热固化有机聚合物,它的导热系数在0.15W/m.K—10W/m.K之间,热固化温度在30℃—100℃之间。导热介质材料包括环氧树脂类、酚醛树脂类、硅胶、PMMA等有机聚合物。
另外,所述托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米-5毫米。通过该下沉区与ICP设备腔体内卡盘接触,用来固定托盘本体在ICP腔体内的位置。并且将该下沉区的导热介质层刮除,该部分不需要导热介质层的存在。
通过上述结构的托盘装置,不需要在托盘本体上设置He气通道和盖板,结构更加简单,降低制造成本。
另外,如7所示,本发明还揭示了一种图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,包括以下步骤:
步骤1,对托盘1进行清洗、烘干备用。具体为:将托盘放入去离子水中进行超声波清洗, 并用毛刷对定位凹槽处进行刷洗,清洗时间为15分钟-30分钟;用氮气枪吹扫托盘表面,然 后放入高温烘箱,烘烤温度为80℃-100℃,烘烤时间为10分钟-20分钟。
步骤2,将液态导热介质喷涂到铝托盘上表面,在托盘的上表面形成均匀的液态导热介质层。采用自动喷涂设备,对喷涂参数进行优化,使液体导热介质均匀覆盖整个托盘表面,涂层厚度范围控制在10微米-100微米。
步骤3,将带有掩膜图形的蓝宝石3衬底放入铝托盘的定位凹槽7中,然后将托盘放入真空烘箱中,进行热固化处理,液态导热介质层转变成固态导热介质层,并将蓝宝石衬底固定在定位凹槽处。具体为:将托盘水平放置在装载台上,采用真空吸笔将带有光刻胶掩膜图案的蓝宝石衬底逐一放入托盘的定位凹槽中,然后将托盘平移放置到真空烘箱中,进行抽真空,保持烘箱内压强为,静置5分钟-10分钟,然后将烘箱温度逐步从室温升高至90℃,升温时间控制在5分钟-10分钟,达到90℃后,再静置5分钟-10分钟,此时,液态导热介质层转换成固态导热介质层。
步骤4,除去托盘1边缘的固态导热介质层,放入ICP设备预腔室,待刻蚀。托盘边缘无需导热介质层存在,因此将该部分的导热介质层刮除。
采用本装载方法刻蚀后,如附图6所示,形成PSS边缘的过渡区较小,提升了品质。
需要说明的是,以上仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,但是凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (9)
1.一种图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,包括托盘本体,所述托盘本体的上表面设有用于固定蓝宝石衬底置的定位凹槽,铝托盘本体的上表面和定位凹槽的表面涂覆有导热介质层;所述导热介质层的材质为热固化有机聚合物,所述热固化过程为,将液态导热介质层转变成固态导热介质层,并将蓝宝石衬底固定在定位凹槽处;不需要在托盘表面制作He气通道和与之相匹配的盖板。
2.根据权利要求1所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述定位凹槽的深度为100微米—300微米之间,定位凹槽的宽度为105毫米—110毫米。
3.根据权利要求2所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述导热介质层的厚度为10微米—100微米。
4.根据权利要求2所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述导热介质层的材质为热固化有机聚合物,它的导热系数在0.15W/m.K—10W/m.K之间,热固化温度在30℃—100℃之间。
5.根据权利要求4所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述导热介质层的材质包括环氧树脂类、酚醛树脂类或PMMA有机聚合物。
6.根据权利要求5所述的图形化蓝宝石衬底刻蚀用的托盘装置,其特征在于,所述托盘本体的边沿设有下沉区,该下沉区与托盘本体上表面的高度差为2毫米-5毫米。
7.一种根据权利要求1-6中任一项所述的图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,其特征在于,所述方法包括以下步骤:
步骤1,对托盘进行清洗、烘干备用;
步骤2,将液态导热介质喷涂到铝托盘上表面,在托盘的上表面形成均匀的液态导热介质层;
步骤3,将带有掩膜图形的蓝宝石衬底放入铝托盘的定位凹槽中,然后将托盘放入真空烘箱中,进行热固化处理,液态导热介质层转变成固态导热介质层,并将蓝宝石衬底固定在定位凹槽处;
步骤4,除去托盘边缘的固态导热介质层,放入ICP设备预腔室,待刻蚀。
8.根据权利要求7所述的图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,其特征在于,所述步骤1具体包括:将托盘放入去离子水中进行超声波清洗,并用毛刷对定位凹槽处进行刷洗,清洗时间为15分钟-30分钟;用氮气枪吹扫托盘表面,然后放入高温烘箱,烘烤温度为80℃-100℃,烘烤时间为10分钟-20分钟。
9.根据权利要求8所述的图形化蓝宝石衬底刻蚀用的托盘装置的装载方法,其特征在于,所述步骤3具体包括:将托盘水平放置在装载台上,采用真空吸笔将带有光刻胶掩膜图案的蓝宝石衬底逐一放入托盘的定位凹槽中,然后将托盘平移放置到真空烘箱中,进行抽真空,保持烘箱内压强,静置5分钟-10分钟,然后将烘箱温度逐步从室温升高至90℃,升温时间控制在5分钟-10分钟,达到90℃后,再静置5分钟-10分钟,此时,液态导热介质层转换成固态导热介质层。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711398828.7A CN108231657B (zh) | 2017-12-22 | 2017-12-22 | 一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711398828.7A CN108231657B (zh) | 2017-12-22 | 2017-12-22 | 一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108231657A CN108231657A (zh) | 2018-06-29 |
CN108231657B true CN108231657B (zh) | 2023-08-18 |
Family
ID=62648441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711398828.7A Active CN108231657B (zh) | 2017-12-22 | 2017-12-22 | 一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108231657B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110190020A (zh) * | 2019-07-03 | 2019-08-30 | 中国振华集团云科电子有限公司 | 一种刻蚀方法及系统 |
CN111653509B (zh) * | 2020-05-27 | 2023-07-21 | 黄山博蓝特半导体科技有限公司 | 高波长一致性的led芯片用图形化蓝宝石衬底的刻蚀方法 |
CN111816604B (zh) * | 2020-08-18 | 2021-03-12 | 北京智创芯源科技有限公司 | 一种晶片刻蚀方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005268540A (ja) * | 2004-03-18 | 2005-09-29 | Mitsubishi Gas Chem Co Inc | エッチング品の製造法。 |
JP2010098010A (ja) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | エッチング装置及びエッチング方法 |
JP2010098012A (ja) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | エッチング装置及びエッチング方法 |
JP2012080028A (ja) * | 2010-10-06 | 2012-04-19 | Miki Polymer Co Ltd | 面実装電子部品の搬送用トレー |
CN203091237U (zh) * | 2013-03-08 | 2013-07-31 | 合肥京东方光电科技有限公司 | 热固化装置 |
CN105448776A (zh) * | 2014-10-16 | 2016-03-30 | 东莞市中镓半导体科技有限公司 | 一种等离子体干法刻蚀用的托盘系统 |
CN207637772U (zh) * | 2017-12-22 | 2018-07-20 | 东莞市中图半导体科技有限公司 | 一种图形化蓝宝石衬底刻蚀用的托盘装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004119810A (ja) * | 2002-09-27 | 2004-04-15 | Mitsubishi Gas Chem Co Inc | 気相工程用トレー |
GB201007669D0 (en) * | 2010-05-07 | 2010-06-23 | Epigem Ltd | Composite electrode for molecular electronic devices and method of manufacture thereof |
US8835940B2 (en) * | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
-
2017
- 2017-12-22 CN CN201711398828.7A patent/CN108231657B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005268540A (ja) * | 2004-03-18 | 2005-09-29 | Mitsubishi Gas Chem Co Inc | エッチング品の製造法。 |
JP2010098010A (ja) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | エッチング装置及びエッチング方法 |
JP2010098012A (ja) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | エッチング装置及びエッチング方法 |
JP2012080028A (ja) * | 2010-10-06 | 2012-04-19 | Miki Polymer Co Ltd | 面実装電子部品の搬送用トレー |
CN203091237U (zh) * | 2013-03-08 | 2013-07-31 | 合肥京东方光电科技有限公司 | 热固化装置 |
CN105448776A (zh) * | 2014-10-16 | 2016-03-30 | 东莞市中镓半导体科技有限公司 | 一种等离子体干法刻蚀用的托盘系统 |
CN207637772U (zh) * | 2017-12-22 | 2018-07-20 | 东莞市中图半导体科技有限公司 | 一种图形化蓝宝石衬底刻蚀用的托盘装置 |
Also Published As
Publication number | Publication date |
---|---|
CN108231657A (zh) | 2018-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108231657B (zh) | 一种图形化蓝宝石衬底刻蚀用的托盘装置及装载方法 | |
US9972520B2 (en) | Aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process | |
KR101510577B1 (ko) | 열판 및 그 열판을 이용한 기판 처리 장치 | |
KR100757545B1 (ko) | 상부 전극 및 플라즈마 처리 장치 | |
CN1251294C (zh) | 等离子体加工装置的温度控制系统 | |
JP2006049404A (ja) | 半導体ウェハの分割方法、半導体素子の製造方法、及び半導体ウェハ分割用マスク形成装置 | |
CN102522305B (zh) | 等离子体处理装置及聚焦环组件 | |
US10586850B2 (en) | Handle for semiconductor-on-diamond wafers and method of manufacture | |
CN109786314B (zh) | 用于夹持塑封晶圆的固定装置及真空溅射金属薄膜工艺 | |
KR101957871B1 (ko) | 정제 광변환체로 led를 본딩 패키징하는 공정방법 및 정제 장비 시스템 | |
CN107452596A (zh) | 元件芯片的制造方法 | |
CN111180370A (zh) | 晶圆承载托盘及半导体加工设备 | |
KR20130108572A (ko) | 사파이어 기판의 에칭 방법 | |
JP6524564B2 (ja) | 素子チップの製造方法および基板加熱装置 | |
TWI633574B (zh) | 半導體處理裝置及處理基板的方法 | |
CN207637772U (zh) | 一种图形化蓝宝石衬底刻蚀用的托盘装置 | |
US10636690B2 (en) | Laminated top plate of a workpiece carrier in micromechanical and semiconductor processing | |
CN108447795B (zh) | Led晶片的键合方法 | |
TWM615033U (zh) | 基板製程設備 | |
KR101147961B1 (ko) | 반도체 제조설비의 정전척 | |
CN105914291B (zh) | 一种精准制备led芯片反射层的方法及led芯片 | |
TWI754404B (zh) | 上電極元件以及等離子體處理設備 | |
JP7054813B2 (ja) | 素子チップの製造方法 | |
JP2006339678A (ja) | プラズマ処理装置及び電極部材 | |
US11961714B2 (en) | Substrate processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: No.4, North Second Industrial Road, Songshanhu, Dongguan City, Guangdong Province 523000 Applicant after: Guangdong Zhongtu Semiconductor Technology Co.,Ltd. Address before: No.4, North Second Industrial Road, Songshanhu, Dongguan City, Guangdong Province 523000 Applicant before: DONGGUAN SINOPATT SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |