CN101150052A - 通过部分刻蚀图案化抗反射涂层层的方法 - Google Patents

通过部分刻蚀图案化抗反射涂层层的方法 Download PDF

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Publication number
CN101150052A
CN101150052A CNA2007101513029A CN200710151302A CN101150052A CN 101150052 A CN101150052 A CN 101150052A CN A2007101513029 A CNA2007101513029 A CN A2007101513029A CN 200710151302 A CN200710151302 A CN 200710151302A CN 101150052 A CN101150052 A CN 101150052A
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CN
China
Prior art keywords
layer
reflective coating
pattern
film
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101513029A
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English (en)
Chinese (zh)
Inventor
桑德拉·海岚德
香农·迪恩
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Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101150052A publication Critical patent/CN101150052A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNA2007101513029A 2006-09-22 2007-09-24 通过部分刻蚀图案化抗反射涂层层的方法 Pending CN101150052A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/534,420 US20080073321A1 (en) 2006-09-22 2006-09-22 Method of patterning an anti-reflective coating by partial etching
US11/534,420 2006-09-22

Publications (1)

Publication Number Publication Date
CN101150052A true CN101150052A (zh) 2008-03-26

Family

ID=39223816

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101513029A Pending CN101150052A (zh) 2006-09-22 2007-09-24 通过部分刻蚀图案化抗反射涂层层的方法

Country Status (5)

Country Link
US (1) US20080073321A1 (ja)
JP (1) JP2008078649A (ja)
KR (1) KR20080027200A (ja)
CN (1) CN101150052A (ja)
TW (1) TW200818261A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054684B (zh) * 2009-11-10 2012-10-03 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN111727490A (zh) * 2018-03-02 2020-09-29 东京毅力科创株式会社 用于将图案转移到层的方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4930095B2 (ja) * 2007-02-22 2012-05-09 富士通株式会社 ウエットエッチング方法および半導体装置の製造方法
US8153351B2 (en) * 2008-10-21 2012-04-10 Advanced Micro Devices, Inc. Methods for performing photolithography using BARCs having graded optical properties
PT2486343T (pt) * 2009-12-01 2019-05-13 Siemens Concentrated Solar Power Ltd Tubo recetor de calor, método de fabrico do tubo recetor de calor, coletor de canal parabólico com o tubo recetor e uso do coletor de canal parabólico
JP6040089B2 (ja) * 2013-04-17 2016-12-07 富士フイルム株式会社 レジスト除去液、これを用いたレジスト除去方法およびフォトマスクの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753417A (en) * 1996-06-10 1998-05-19 Sharp Microelectronics Technology, Inc. Multiple exposure masking system for forming multi-level resist profiles
US6844131B2 (en) * 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US7364832B2 (en) * 2003-06-11 2008-04-29 Brewer Science Inc. Wet developable hard mask in conjunction with thin photoresist for micro photolithography
KR100611151B1 (ko) * 2003-11-27 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조방법
US7265056B2 (en) * 2004-01-09 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming novel BARC open for precision critical dimension control
US7064078B2 (en) * 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
KR100598105B1 (ko) * 2004-06-17 2006-07-07 삼성전자주식회사 반도체 패턴 형성 방법
US7271108B2 (en) * 2005-06-28 2007-09-18 Lam Research Corporation Multiple mask process with etch mask stack
US7579137B2 (en) * 2005-12-24 2009-08-25 International Business Machines Corporation Method for fabricating dual damascene structures
US20070166648A1 (en) * 2006-01-17 2007-07-19 International Business Machines Corporation Integrated lithography and etch for dual damascene structures
US20080020327A1 (en) * 2006-07-19 2008-01-24 International Business Machines Corporation Method of formation of a damascene structure
US7432191B1 (en) * 2007-03-30 2008-10-07 Tokyo Electron Limited Method of forming a dual damascene structure utilizing a developable anti-reflective coating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054684B (zh) * 2009-11-10 2012-10-03 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN111727490A (zh) * 2018-03-02 2020-09-29 东京毅力科创株式会社 用于将图案转移到层的方法

Also Published As

Publication number Publication date
TW200818261A (en) 2008-04-16
JP2008078649A (ja) 2008-04-03
KR20080027200A (ko) 2008-03-26
US20080073321A1 (en) 2008-03-27

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