CN101147994A - Method for preparing copper film thicken copper-coating ceramic substrate - Google Patents
Method for preparing copper film thicken copper-coating ceramic substrate Download PDFInfo
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- CN101147994A CN101147994A CNA2007100562615A CN200710056261A CN101147994A CN 101147994 A CN101147994 A CN 101147994A CN A2007100562615 A CNA2007100562615 A CN A2007100562615A CN 200710056261 A CN200710056261 A CN 200710056261A CN 101147994 A CN101147994 A CN 101147994A
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Abstract
The present invention is process of preparing copper clad ceramic substrate with thick copper film and relates to electronic device manufacturing technology. The copper clad ceramic substrate with thick copper film is prepared through nickel plating copper sheet, painting high temperature solder paste on the copper clad of DBC substrate, setting the copper sheet onto the copper clad, high temperature reflux soldering in a high temperature reflux furnace to obtain copper clad ceramic substrate with thick copper film. The copper clad ceramic substrate with thick copper film has increased heat capacity, and capacity of absorbing heat the surge voltage and current generates instantaneously.
Description
Technical field
The present invention relates to the electronic device manufacturing technology field, is a kind of preparation method of covering the copper ceramic substrate.
Background technology
Cover copper ceramic substrate (hereinafter to be referred as the DBC substrate), because the characteristics such as temperature characterisitic that have high-termal conductivity, high electric insulation, current capacity is big, mechanical strength is high, are complementary with silicon, therefore be widely used in particular electrical sub-industries such as space flight, military project, automobile, be used for the insulation and the heat radiation of power chip.At present, the DBC substrate is to adopt high temperature evaporation technology that copper is deposited to Al
2O
3On the ceramic substrate, and then carry out high temperature sintering.Therefore, the covering the copper thickness maximum and can only accomplish 0.3mm. of DBC substrate in the world.Therefore, in order to reach the desirable radiating effect of chip, the design margin that the designer must leave enough DBC plates ensures the radiating effect of power chip, and obtaining of this design margin is by increasing several times of DBC substrate area---both the cost with volume of sacrificing product and the high product cost of increase (because of the DBC substrate costs an arm and a leg) realized.Simultaneously, be accompanied by the increase of DBC substrate area, when carrying out the high temperature reflux weldering, the bottom surface of DBC substrate very easily produces air cushion, and then has increased thermal resistance, has reduced DBC substrate heat conduction effect.Therefore it is unsatisfactory to reach radiating effect by increasing DBC substrate area merely simply.In fact, the area of the DBC substrate that theory calculates can satisfy the heat radiation of chip fully in the chip normal range of operation, be that the high heat of transient state that surge voltage and electric current produce---the both common said thermal breakdown of people caused and cause the principal element of power chip infringement.
By the ignition module of popular company standard, during the 14V operate as normal, electric current output is not less than 9.3A, this moment, the Darlington chip power should be 130W, and simultaneously, popular company considers the not normal factor of Circuits System, when having increased 20V work again, electric current output is not less than the condition of 9.5A.In this case, the Darlington chip power should be 190W.Calculate in view of the above, it is that (because of selecting power for use is the 190W chip to the 156W chip that the technical staff of company has selected power for use, it is more than 3 times of 156W chip that price will exceed power), the DBC substrate area has been selected 0.7 * 1mm, has covered the DBC substrate that copper thickness is 0.2mm (cover copper thickness and be 0.3mm DBC substrate and will exceed DBC substrate with homalographic 0.2mm on the price more than 1/4).The foundation of making above-mentioned selection is:
This chip and DBC substrate parameter area can satisfy the operate as normal requirement of product fully.Crucial problem is how to solve the high hot thermal breakdown of may cause for power chip of transient state that the 20V surge voltage produces, and both how to have solved the reasonable heat dissipation problem of power chip in the case.This designer is at first considered to solve with increasing the DBC substrate area: method be with the area of DBC substrate by 0.7 original * 1mm, to cover copper thickness be that the DBC substrate of 0.2mm expands 0.7 * 2.6mm to, covers the DBC substrate that copper thickness is 0.2mm.Adopting this scheme is not merely that every product product has increased money cost more than 8 yuan (two DBC substrates of this product needed), the problem of most critical is: in actual use, because the DBC substrate area is excessive, cause DBC substrate solder side when high temperature reflux welds to produce the large tracts of land air cushion, increased the thermal resistance of DBC substrate thus, wished that originally the thermal effect of crossing that utilizes increasing DBC substrate area to absorb the surge voltage generation does not display.
Summary of the invention
The technical problem to be solved in the present invention is the preparation method of covering the copper ceramic substrate who discloses a kind of copper film thickening of good heat dissipation effect.
The thinking of technical solution problem of the present invention is in the value range of theory calculating DBC substrate and on the basis of not destroying the original performance of DBC substrate, increase the copper thickness that covers of DBC substrate, and then the thermal capacity of increase DBC substrate, the unnecessary heat moment that makes that surge voltage and electric current produce is absorbed, and can avoid the thermal breakdown of power chip fully.
Technical scheme of dealing with problems of the present invention is on the basis that does not change the original performance of DBC substrate, utilizes high-sintering process, reaches to cover the thickening of copper layer, thereby improves the thermal capacity of DBC substrate.
Concrete preparation method is as follows:
1, get and cover the copper layer with the DBC substrate and carry out Nickel Plating Treatment with the copper sheet of homalographic, copper sheet thickness is the 0.8-2.0 millimeter;
2, the copper layer that covers that will have the DBC substrate now is coated with the high temperature tin cream, copper sheet is placed on the DBC substrate scribbles covering on the copper layer of high temperature tin cream, and the fusing point of the high temperature tin cream of selecting for use is: 330～340 ℃;
3, the DBC substrate that will be covered with copper sheet places the high temperature reflux stove, and through the high temperature reflux welding, that makes the copper film thickening covers the copper ceramic substrate, and wherein the temperature that is provided with of high temperature reflux stove is 450 ± 10 ℃, and practical devices central point temperature is: 380 ℃ ± 10 ℃.
The purpose of nickel plating is the oxidation of copper sheet when avoiding high temperature sintering, and is satisfactory for result when the thickness of nickel dam is 1～1.2 micron.
Overlay on more firmly on the DBC substrate in order to reach copper sheet, the step of reflow soldering is preheating, welding and cooling gradually, wherein preheat temperature is 200 ℃ ± 10 ℃, and the time is 8-10 minute, and be 2-3 minute weld interval, chilling temperature is 200 ℃ ± 10 ℃ gradually, and the time is 8-10 minute.
Test result is as follows:
1, be sintered on 1 square centimeter the DBC substrate that covers copper 0.2mm by high-sintering process to 1 square centimeter of thick copper sheet of nickel plating 0.8mm, its thermal capacity can be brought up to 2.5 times of former DBC substrate, and the cost that increases only quite uses 1/20th of equal radiating effect DBC substrate.
2, be sintered on 1 square centimeter the DBC substrate that covers copper 0.2mm by high-sintering process to 1 square centimeter of thick copper sheet of nickel plating 2.0mm, its thermal capacity can be brought up to 8 times of former DBC substrate, and the cost that increases only quite uses 1/10th of equal radiating effect DBC substrate.
The inventive method is implemented simple, does not destroy any original performance of DBC substrate, can effectively dwindle small product size, and reduce product cost significantly.
The specific embodiment:
Example 1, the copper layer that covers that will have the DBC substrate now are coated with tin cream and handle, get with the DBC substrate and cover the long-pending copper sheet that equates of copper aspect, copper sheet thickness is 0.8mm, nickel plating on copper sheet, and the thickness of nickel dam is 1 micron, copper sheet is placed on the DBC substrate again, copper sheet overlaps and contacts with the copper layer that covers of DBC substrate, and the DBC substrate that will cover copper sheet places the high temperature reflux stove, through the high temperature reflux welding, that makes copper film thickening covers the copper ceramic substrate, and wherein the temperature that is provided with of high temperature reflux stove is 450 ℃; Practical devices central point temperature is: 380 ℃.
Example 2, the copper layer that covers of existing DBC substrate is coated with the tin cream processing, get with the DBC substrate and cover the long-pending copper sheet that equates of copper aspect, copper sheet thickness is 2.0mm, nickel plating on copper sheet, the thickness of nickel dam is 1.2 microns, copper sheet is placed on the DBC substrate, copper sheet overlaps and contacts with the copper layer that covers of DBC substrate again, and the DBC substrate that will cover copper sheet places the high temperature reflux stove, through the high temperature reflux welding, that makes copper film thickening covers the copper ceramic substrate, and wherein preheat temperature is 200 ℃, and the time is 9 minutes, be 3 minutes weld interval, temperature is 390 ℃, and chilling temperature is 200 ℃ gradually, and the time is 9 minutes.
Claims (3)
1. the preparation method of covering the copper ceramic substrate of a copper film thickening is characterized in that: finished by following steps
(1), get and cover the copper layer with the DBC substrate and carry out Nickel Plating Treatment with the copper sheet of homalographic, copper sheet thickness is the 0.8-2.0 millimeter;
(2), the copper layer that covers that will have the DBC substrate now is coated with the high temperature tin cream, copper sheet is placed on the DBC substrate scribbles covering on the copper layer of high temperature tin cream, the fusing point of the high temperature tin cream of selecting for use is: 330～340 ℃;
(3), the DBC substrate that will be covered with copper sheet places the high temperature reflux stove, through the high temperature reflux welding, that makes the copper film thickening covers the copper ceramic substrate, wherein the temperature that is provided with of high temperature reflux stove is 450 ± 10 ℃, practical devices central point temperature is: 380 ℃ ± 10 ℃.
2. the preparation method of covering the copper ceramic substrate according to claim 1 is characterized in that: the thickness of copper sheet nickel dam is 1～1.2 micron.
3. the preparation method of covering the copper ceramic substrate according to claim 1, it is characterized in that: the step of reflow soldering is, preheating, welding and cooling gradually, wherein preheat temperature is 200 ℃ ± 10 ℃, time is 8-10 minute, be 2-3 minute weld interval, and chilling temperature is 200 ℃ ± 10 ℃ gradually, and the time is 8-10 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100562615A CN100483763C (en) | 2007-11-02 | 2007-11-02 | Method for preparing copper film thicken copper-coating ceramic substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100562615A CN100483763C (en) | 2007-11-02 | 2007-11-02 | Method for preparing copper film thicken copper-coating ceramic substrate |
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| CN101147994A true CN101147994A (en) | 2008-03-26 |
| CN100483763C CN100483763C (en) | 2009-04-29 |
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| CNB2007100562615A Expired - Fee Related CN100483763C (en) | 2007-11-02 | 2007-11-02 | Method for preparing copper film thicken copper-coating ceramic substrate |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814439A (en) * | 2010-04-06 | 2010-08-25 | 淄博市临淄银河高技术开发有限公司 | Process for preparing low thermal resistance ceramic copper-clad plate used for IGBT (Insulated Gate Bipolar Transistor) module |
| CN101699932B (en) * | 2009-11-02 | 2011-09-14 | 广东达进电子科技有限公司 | Method for producing high thermal conductivity ceramic circuit board |
| CN102339758A (en) * | 2011-10-13 | 2012-02-01 | 华中科技大学 | Method for manufacturing copper-ceramic substrate by adopting low-temperature bonding |
| CN102560488A (en) * | 2012-02-02 | 2012-07-11 | 天津大学 | DBC (Direct Bonded Copper) substrate surface treatment process based on nano-silver soldering paste connecting chip |
| CN103117256A (en) * | 2011-11-17 | 2013-05-22 | 上海申和热磁电子有限公司 | Ceramic bonding copper substrate and manufacture method thereof |
| CN104289787A (en) * | 2014-09-04 | 2015-01-21 | 安徽华东光电技术研究所 | Method for improving welding penetration rate of nickel-plated shell and substrate |
| CN108520855A (en) * | 2018-05-11 | 2018-09-11 | 北京科技大学 | A kind of method that nanometer silver paste improves ceramic copper-clad plate reliability |
| CN108705168A (en) * | 2018-06-19 | 2018-10-26 | 成都九洲迪飞科技有限责任公司 | A kind of power amplifier protection of pipe structure and its forming method preventing ring flange installation deformation |
| CN109108417A (en) * | 2018-09-28 | 2019-01-01 | 西安航空学院 | A kind of welding method of the aluminium silicon carbide ceramic substrate based on PVD coating |
Families Citing this family (1)
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| JP2013026284A (en) * | 2011-07-15 | 2013-02-04 | Toyo Aluminium Kk | Manufacturing method of heat radiation laminated material for mounting substrate |
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2007
- 2007-11-02 CN CNB2007100562615A patent/CN100483763C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699932B (en) * | 2009-11-02 | 2011-09-14 | 广东达进电子科技有限公司 | Method for producing high thermal conductivity ceramic circuit board |
| CN101814439A (en) * | 2010-04-06 | 2010-08-25 | 淄博市临淄银河高技术开发有限公司 | Process for preparing low thermal resistance ceramic copper-clad plate used for IGBT (Insulated Gate Bipolar Transistor) module |
| CN102339758A (en) * | 2011-10-13 | 2012-02-01 | 华中科技大学 | Method for manufacturing copper-ceramic substrate by adopting low-temperature bonding |
| CN102339758B (en) * | 2011-10-13 | 2013-05-22 | 华中科技大学 | Method for manufacturing copper-ceramic substrate by adopting low-temperature bonding |
| CN103117256A (en) * | 2011-11-17 | 2013-05-22 | 上海申和热磁电子有限公司 | Ceramic bonding copper substrate and manufacture method thereof |
| CN102560488A (en) * | 2012-02-02 | 2012-07-11 | 天津大学 | DBC (Direct Bonded Copper) substrate surface treatment process based on nano-silver soldering paste connecting chip |
| CN104289787A (en) * | 2014-09-04 | 2015-01-21 | 安徽华东光电技术研究所 | Method for improving welding penetration rate of nickel-plated shell and substrate |
| CN108520855A (en) * | 2018-05-11 | 2018-09-11 | 北京科技大学 | A kind of method that nanometer silver paste improves ceramic copper-clad plate reliability |
| CN108705168A (en) * | 2018-06-19 | 2018-10-26 | 成都九洲迪飞科技有限责任公司 | A kind of power amplifier protection of pipe structure and its forming method preventing ring flange installation deformation |
| CN109108417A (en) * | 2018-09-28 | 2019-01-01 | 西安航空学院 | A kind of welding method of the aluminium silicon carbide ceramic substrate based on PVD coating |
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| CN100483763C (en) | 2009-04-29 |
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