CN102560488A - DBC (Direct Bonded Copper) substrate surface treatment process based on nano-silver soldering paste connecting chip - Google Patents
DBC (Direct Bonded Copper) substrate surface treatment process based on nano-silver soldering paste connecting chip Download PDFInfo
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Abstract
The invention discloses a DBC (Direct Bonded Copper) substrate surface treatment process based on a nano-silver soldering paste connecting chip. The DBC substrate surface treatment process comprises the following steps of: firstly carrying out cleaning pretreatment on the surface of a DBC substrate; then carrying out electronickelling treatment on the pretreated DBC substrate; and finally, after thorough cleaning, carrying out silverplating treatment on the surface of the electronickelled DBC substrate by using a magnetron sputtering method. The DBC substrate surface treatment process based on the nano-silver soldering paste connecting chip has the following beneficial effects: when the electronickelled DBC substrate subjected to magnetron sputtering silver is sintered at high temperature by using a nano-silver soldering paste, the metal copper on the surface of the DBC substrate does not oxidize, i.e. the metal copper does not permeate the surface of a silvering layer; after being sintered, the nano-silver soldering paste has good bonding strength with the electronickelled DBC substrate subjected to magnetron sputtering silver; and the DBC substrate surface treatment process is green and environment-friendly and has no adverse effect on the environment.
Description
Technical field
The present invention relates to the process of surface treatment of a kind of direct copper (DBC) substrate, specifically, relate to a kind of DBC substrate surface treatment process that connects chip based on nano mattisolda.
Background technology
In high-power insulated gate bipolar transistor (IGBT) module, the DBC substrate is that chip provides functions such as a connection, thermodiffusion, mechanical support.The traditional technology that device connects is through conductive resin or scolder, and the terminal of chip is connected with the DBC substrate, and the other end connects with fine aluminum wire.But there are short, shortcomings such as fusing point is low, poor radiation in work-ing life in conventional conductive glue or scolder, thereby cause the working temperature of high-power chip and DBC substrate tie point not surpass 150 ℃, and the high-power IGBT module is restricted in practical application.
New type low temperature agglomerating nano mattisolda, major ingredient are argent, and numerous advantages such as fusing point height, favorable conductive, thermal conductivity and the solderability etc. of silver make this novel encapsulated material can realize connection high-power, the high-temperature electronic device.
The high-power IGBT module use nano mattisolda as chip and DBC substrate be connected material the time; Need earlier at DBC substrate plating surface one deck silver; And require silvering enough fine and close, prevent that the copper of DBC is diffused into the surface of silvering, could realize high-intensity connection.The traditional silver plating process that can realize this function adopts prussiate, and still, prussiate is very big to the harm of environment; And when adopting the non-cyanide silver electroplating prescription, silvered film is fine and close inadequately, and the metallic copper of DBC substrate surface can ooze out the silvered film surface, influence the bonding strength of nano mattisolda connection chip and DBC substrate.Therefore, need take certain process of surface treatment, both can prevent that DBC substrate surface copper from oozing out the silvered film surface, can guarantee to use nano mattisolda to connect the bonding strength between chip and the DBC substrate again, and can not exert an adverse impact environment.
Summary of the invention
What the present invention will solve is existing in prior technology the problems referred to above; A kind of DBC substrate surface treatment process that connects chip based on nano mattisolda is provided; Can guarantee that the DBC substrate uses nano mattisolda when high temperature sintering, the metallic copper of DBC substrate surface can not diffuse to the silvering surface; Nano mattisolda is behind sintering, and the bonding strength of nano mattisolda and DBC substrate is good; In addition, can not produce detrimentally affect to environment yet.
In order to solve the problems of the technologies described above, the present invention is achieved through following technical scheme:
A kind of DBC substrate surface treatment process based on nano mattisolda connection chip, this method is carried out according to following steps:
A. the DBC substrate surface is cleaned pre-treatment;
B. adopt electrochemical method to carry out electronickelling to pretreated DBC substrate and handle, said nickel plating solution is made up of following prescription: single nickel salt 250～350g/L, nickelous chloride 40～50g/L, boric acid 35～45g/L keep 15～25mA/cm under 50～60 ℃ of temperature
2Cathode current density 5～10min, negative electrode and annode area ratio are 1: 1, in the electroplating process nickel plating solution are stirred;
C. adopt magnetron sputtering method to do silver-plated processing to the DBC substrate surface after the electronickelling:
(1) use flowing water to clean to DBC substrate after the electronickelling;
(2) carry out ultrasonic cleaning DBC substrate with absolute ethyl alcohol;
(3) dry up;
(4) the DBC substrate after will drying up is put into the ultrahigh vacuum(HHV) magnetic control and ionic fluid cleans filming equipment, and ultrahigh vacuum(HHV) magnetic control and ionic fluid cleaning filming equipment are vacuumized;
(5) use ion gun that ion is carried out on the surface that dries up subsequent use DBC substrate and clean, line is 4～6ml, and sparking voltage is 40～60V; Heater current is about 7～8A; Acceleration voltage is about 80～120V, and line voltage is about 400～600V, scavenging period 3～5min;
(6) the DBC substrate surface after the ion cleaning is carried out magnetron sputtering silver; Argon flow amount is 25～35ml, and air pressure is 1～3Pa during build-up of luminance, and pressure maintains 0.2～0.4Pa during magnetron sputtering silver; D.c. sputtering power is (0.1～0.2) A * (0.1～0.3) KV, sputtering time 15～20min.
Wherein, the cleaning pre-treatment of said step (a), carry out according to following steps:
(1) use 10% sodium hydroxide solution to clean 20～40s to the DBC substrate;
(2) flowing water cleans up;
(3) use dilute nitric acid solution that the DBC substrate is carried out Passivation Treatment;
(4) after the DBC substrate surface exposed copper crystal grain, flowing water cleaned up;
(5) use dilute hydrochloric acid solution to clean 20～40s to the DBC substrate;
(6) flowing water cleans up;
(7) use washed with de-ionized water;
(8) inhale the deionized water that removes the DBC substrate surface with filter paper.
The invention has the beneficial effects as follows:
(1) electronickelling among the present invention handle to form dense nickel dam, and nickel dam is as transition layer between silver layer and the copper, can effectively stop at high temperature copper to the diffusion of nickel dam; Thereby stoped the diffusion of copper to silver layer; Effectively protected silvering, so nickel dam mainly plays buffer action, the DBC substrate of magnetron sputtering silver uses nano mattisolda when high temperature sintering after the electronickelling; Oxidizing reaction can not take place in the metallic copper of DBC substrate surface, promptly can not ooze out the silvering surface.
(2) behind the electroless nickel layer, adopt the bonding strength of the silver-plated film of electro-plating method low, can't satisfy the requirement of high bond strength.The present invention adopts magnetically controlled sputter method silver-plated; Can in vacuum chamber, use ion gun that the surface is cleaned; Then direct plated film effectively stoped surface contamination, so nano mattisolda is behind sintering; The bonding strength of the DBC substrate of magnetron sputtering silver is good after nano mattisolda and the electronickelling, and bonding force is higher.
(3) avoided the employing prussiate in the process step of the present invention, therefore can not produce detrimentally affect, environmental protection environment.
Embodiment
The ultimate principle of process step is following among the present invention:
(1) electroplate transition layer nickel for the migration that stops copper atom at the DBC substrate surface, electronickelling is by the galvanic effect in the external world, in solution, carries out electrolytic reaction, thereby deposits the process of last layer nickel metal at substrate surface.Adopt NiSO
4Make electrolyte solution, the DBC substrate connects power cathode, and the pure nickel plate connects power anode, and after the energising, metallic nickel gets into plating bath with ionic condition, and constantly to cathodic migration, on negative electrode, obtaining electron reduction at last is metallic nickel, forms metallic nickel plated layer gradually.
(2), adopt the bonding strength of electro-plating method silvered film low behind the electroless nickel layer because nickel and silver can not dissolve each other.In vacuum chamber, use ion gun that ion is carried out on the electroless nickel layer surface and clean back magnetron sputtering silver, not only prevented the pollution on nickeling layer surface, also make nickel and silver form covalent linkage, thereby improved bonding strength, form good silvering.
Through concrete embodiment the present invention is made further detailed description below:
Embodiment 1
The cleaning pre-treatment of DBC substrate.Use 10% sodium hydroxide solution to clean 30s to the DBC substrate, flowing water cleans up; The dilute nitric acid solution of use 25% carries out Passivation Treatment to the DBC substrate, and after the DBC substrate surface exposed copper crystal grain, flowing water cleaned up; Use 10% dilute hydrochloric acid solution to clean 30s to the DBC substrate, flowing water cleans up, and uses washed with de-ionized water; Inhale the deionized water that removes the DBC substrate surface with filter paper.
The electronickelling technology of DBC substrate.The nickel plating solution prescription is: single nickel salt 250g/L, nickelous chloride 40g/L, boric acid 35g/L keep 20mA/cm under 50 ℃ of temperature
2Cathode current density 7min, negative electrode and annode area ratio are 1: 1, the used instrument of electronickelling is an electrochemical workstation, uses the heating magnetic stirring apparatus to heat in the electronickelling process and stirs.
The magnetron sputtering silver process of DBC substrate, institute uses equipment to clean filming equipment as ultrahigh vacuum(HHV) magnetic control and ionic fluid.Use flowing water to clean to DBC substrate after the nickel plating, the absolute ethyl alcohol ultrasonic cleaning after drying up, is put into ultrahigh vacuum(HHV) magnetic control and ionic fluid and is cleaned filming equipment; After equipment vacuumizes, use ion gun to nickel plating after the surface of DBC substrate carry out ion and clean, concrete processing parameter: line is about 5ml; Sparking voltage is 50V, and heater current is about 7.5A, and acceleration voltage is about 100V; Line voltage is about 500V, scavenging period 4min; Magnetron sputtering silver is carried out on surface to DBC substrate after the nickel plating, and concrete processing parameter: argon flow amount is about 30ml, and air pressure is about 2Pa during build-up of luminance, and pressure maintains about 0.3Pa during magnetron sputtering silver, and d.c. sputtering power is 0.1A * 0.2KV, sputtering time 15min.
Embodiment 2
The cleaning pre-treatment of DBC substrate.Use 10% sodium hydroxide solution to clean 20s to the DBC substrate, flowing water cleans up; The dilute nitric acid solution of use 25% carries out Passivation Treatment to the DBC substrate, and after the DBC substrate surface exposed copper crystal grain, flowing water cleaned up; Use 10% dilute hydrochloric acid solution to clean 20s to the DBC substrate, flowing water cleans up, and uses washed with de-ionized water; Inhale the deionized water that removes the DBC substrate surface with filter paper.
The electronickelling technology of DBC substrate.The nickel plating solution prescription is: single nickel salt 300g/L, nickelous chloride 45g/L, boric acid 40g/L keep 15mA/cm under 56 ℃ of temperature
2Cathode current density 5min, negative electrode and annode area ratio are 1: 1, the used instrument of electronickelling is an electrochemical workstation, uses the heating magnetic stirring apparatus to heat in the electronickelling process and stirs.
The magnetron sputtering silver process of DBC substrate, institute uses equipment to clean filming equipment as ultrahigh vacuum(HHV) magnetic control and ionic fluid.Use flowing water to clean to DBC substrate after the nickel plating, the absolute ethyl alcohol ultrasonic cleaning after drying up, is put into ultrahigh vacuum(HHV) magnetic control and ionic fluid and is cleaned filming equipment; After equipment vacuumizes, use ion gun to nickel plating after the surface of DBC substrate carry out ion and clean, concrete processing parameter: line is about 4ml; Sparking voltage is 40V, and heater current is about 7A, and acceleration voltage is about 80V; Line voltage is about 400V, scavenging period 3min; Magnetron sputtering silver is carried out on surface to DBC substrate after the nickel plating, and concrete processing parameter: argon flow amount is about 25ml, and air pressure is about 1Pa during build-up of luminance, and pressure maintains about 0.2Pa during magnetron sputtering silver, and d.c. sputtering power is 0.2A * 0.1KV, sputtering time 18min.
Embodiment 3
The cleaning pre-treatment of DBC substrate.Use 10% sodium hydroxide solution to clean 40s to the DBC substrate, flowing water cleans up; The dilute nitric acid solution of use 25% carries out Passivation Treatment to the DBC substrate, and after the DBC substrate surface exposed copper crystal grain, flowing water cleaned up; Use 10% dilute hydrochloric acid solution to clean 40s to the DBC substrate, flowing water cleans up, and uses washed with de-ionized water; Inhale the deionized water that removes the DBC substrate surface with filter paper.
The electronickelling technology of DBC substrate.The nickel plating solution prescription is: single nickel salt 350g/L, nickelous chloride 50g/L, boric acid 45g/L keep 25mA/cm under 60 ℃ of temperature
2Cathode current density 10min, negative electrode and annode area ratio are 1: 1, the used instrument of electronickelling is an electrochemical workstation, uses the heating magnetic stirring apparatus to heat in the electronickelling process and stirs.
The magnetron sputtering silver process of DBC substrate, institute uses equipment to clean filming equipment as ultrahigh vacuum(HHV) magnetic control and ionic fluid.Use flowing water to clean to DBC substrate after the nickel plating, the absolute ethyl alcohol ultrasonic cleaning after drying up, is put into ultrahigh vacuum(HHV) magnetic control and ionic fluid and is cleaned filming equipment; After equipment vacuumizes, use ion gun to nickel plating after the surface of DBC substrate carry out ion and clean, concrete processing parameter: line is about 6ml; Sparking voltage is 60V, and heater current is about 8A, and acceleration voltage is about 120V; Line voltage is about 600V, scavenging period 5min; Magnetron sputtering silver is carried out on surface to DBC substrate after the nickel plating, and concrete processing parameter: argon flow amount is about 35ml, and air pressure is about 3Pa during build-up of luminance, and pressure maintains about 0.4Pa during magnetron sputtering silver, and d.c. sputtering power is 0.2A * 0.3KV, sputtering time 20min.
Although top combination is described the preferred embodiments of the present invention; But the present invention is not limited to above-mentioned embodiment, and above-mentioned embodiment only is schematically, is not restrictive; Those of ordinary skill in the art is under enlightenment of the present invention; Not breaking away under the scope situation that aim of the present invention and claim protect, can also make the concrete conversion of a lot of forms, these all belong within protection scope of the present invention.
Claims (2)
1. one kind connects the DBC substrate surface treatment process of chip based on nano mattisolda, it is characterized in that this technology is carried out according to following steps:
A. the DBC substrate surface is cleaned pre-treatment;
B. adopt electrochemical method to carry out electronickelling to pretreated DBC substrate and handle, said nickel plating solution is made up of following prescription: single nickel salt 250～350g/L, nickelous chloride 40～50g/L, boric acid 35～45g/L keep 15～25mA/cm under 50～60 ℃ of temperature
2Cathode current density 5～10min, negative electrode and annode area ratio are 1: 1, in the electroplating process nickel plating solution are stirred;
C. adopt magnetron sputtering method to do silver-plated processing to the DBC substrate surface after the electronickelling:
(1) use flowing water to clean to DBC substrate after the electronickelling;
(2) carry out ultrasonic cleaning DBC substrate with absolute ethyl alcohol;
(3) dry up;
(4) the DBC substrate after will drying up is put into the ultrahigh vacuum(HHV) magnetic control and ionic fluid cleans filming equipment, and ultrahigh vacuum(HHV) magnetic control and ionic fluid cleaning filming equipment are vacuumized;
(5) use ion gun that ion is carried out on the surface that dries up subsequent use DBC substrate and clean, line is 4～6ml, and sparking voltage is 40～60V; Heater current is about 7～8A; Acceleration voltage is about 80～120V, and line voltage is about 400～600V, scavenging period 3～5min;
(6) the DBC substrate surface after the ion cleaning is carried out magnetron sputtering silver; Argon flow amount is 25～35ml, and air pressure is 1～3Pa during build-up of luminance, and pressure maintains 0.2～0.4Pa during magnetron sputtering silver; D.c. sputtering power is (0.1～0.2) A * (0.1～0.3) KV, sputtering time 15～20min.
2. a kind of DBC substrate surface treatment process based on nano mattisolda connection chip according to claim 1 is characterized in that the cleaning pre-treatment of said step (a) is carried out according to following steps:
(1) use 10% sodium hydroxide solution to clean 20～40s to the DBC substrate;
(2) flowing water cleans up;
(3) use dilute nitric acid solution that the DBC substrate is carried out Passivation Treatment;
(4) after the DBC substrate surface exposed copper crystal grain, flowing water cleaned up;
(5) use dilute hydrochloric acid solution to clean 20～40s to the DBC substrate;
(6) flowing water cleans up;
(7) use washed with de-ionized water;
(8) inhale the deionized water that removes the DBC substrate surface with filter paper.
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| CN201210023335.6A CN102560488B (en) | 2012-02-02 | 2012-02-02 | DBC (Direct Bonded Copper) substrate surface treatment process based on nano-silver soldering paste connecting chip |
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| CN103331454A (en) * | 2013-07-02 | 2013-10-02 | 南京大学 | Nano-silver manufacturing technology |
| WO2014015481A1 (en) * | 2012-07-25 | 2014-01-30 | 建业（惠州）电路版有限公司 | Method for treating circuit board surface |
| CN104392942A (en) * | 2014-11-05 | 2015-03-04 | 天津大学 | Method for encapsulating high-power IGBT device through performing non-pressure low-temperature sintering on nano silver soldering paste |
| CN104319241B (en) * | 2014-09-15 | 2017-01-18 | 天津大学 | A method for connecting a high-power GTO module by means of pressureless sintering |
| CN104201117B (en) * | 2014-08-26 | 2017-07-07 | 天津大学 | A kind of method that use ultrasonic wave added nano mattisolda sintering makes power model |
| CN108520855A (en) * | 2018-05-11 | 2018-09-11 | 北京科技大学 | A kind of method that nanometer silver paste improves ceramic copper-clad plate reliability |
| CN109280895A (en) * | 2017-07-20 | 2019-01-29 | 中国科学院宁波材料技术与工程研究所 | A kind of preparation method of the Mo/Ag laminar composite of high-densit, high interface cohesion |
| CN109411372A (en) * | 2018-09-17 | 2019-03-01 | 天津大学 | A method of based on covering copper ceramic substrate uniform current assisted sintering nano mattisolda temperature field |
| CN113555274A (en) * | 2021-07-21 | 2021-10-26 | 江西圆融光电科技有限公司 | Chip cleaning method |
| CN114150314A (en) * | 2021-11-23 | 2022-03-08 | 中国航发北京航空材料研究院 | High-corrosion-resistance composite silver layer and preparation process thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2014015481A1 (en) * | 2012-07-25 | 2014-01-30 | 建业（惠州）电路版有限公司 | Method for treating circuit board surface |
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| CN104201117B (en) * | 2014-08-26 | 2017-07-07 | 天津大学 | A kind of method that use ultrasonic wave added nano mattisolda sintering makes power model |
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| CN113555274A (en) * | 2021-07-21 | 2021-10-26 | 江西圆融光电科技有限公司 | Chip cleaning method |
| CN113555274B (en) * | 2021-07-21 | 2023-06-02 | 江西圆融光电科技有限公司 | Chip cleaning method |
| CN114150314A (en) * | 2021-11-23 | 2022-03-08 | 中国航发北京航空材料研究院 | High-corrosion-resistance composite silver layer and preparation process thereof |
| CN114150314B (en) * | 2021-11-23 | 2024-02-13 | 中国航发北京航空材料研究院 | High corrosion-resistant composite silver layer and preparation process thereof |
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