CN101138049A - 用于操作无源矩阵可寻址铁电或驻极体存储器件的方法 - Google Patents

用于操作无源矩阵可寻址铁电或驻极体存储器件的方法 Download PDF

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Publication number
CN101138049A
CN101138049A CNA200580048952XA CN200580048952A CN101138049A CN 101138049 A CN101138049 A CN 101138049A CN A200580048952X A CNA200580048952X A CN A200580048952XA CN 200580048952 A CN200580048952 A CN 200580048952A CN 101138049 A CN101138049 A CN 101138049A
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CN
China
Prior art keywords
unit
voltage
refresh
pulse
word line
Prior art date
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Pending
Application number
CNA200580048952XA
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English (en)
Chinese (zh)
Inventor
C·卡尔森
G·古斯塔夫森
M·约翰逊
P·桑德斯特龙
P·-E·诺达尔
H·G·古德森
J·卡尔森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FILM ELECTRONIC Co Ltd
Original Assignee
FILM ELECTRONIC Co Ltd
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Filing date
Publication date
Application filed by FILM ELECTRONIC Co Ltd filed Critical FILM ELECTRONIC Co Ltd
Publication of CN101138049A publication Critical patent/CN101138049A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
CNA200580048952XA 2005-01-04 2005-01-04 用于操作无源矩阵可寻址铁电或驻极体存储器件的方法 Pending CN101138049A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/NO2005/000001 WO2006073308A1 (fr) 2005-01-04 2005-01-04 Méthode pour faire fonctionner un dispositif mémoire passif à adressage matriciel ferroélectrique ou à électret

Publications (1)

Publication Number Publication Date
CN101138049A true CN101138049A (zh) 2008-03-05

Family

ID=36647759

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200580048952XA Pending CN101138049A (zh) 2005-01-04 2005-01-04 用于操作无源矩阵可寻址铁电或驻极体存储器件的方法

Country Status (4)

Country Link
EP (1) EP1834336A1 (fr)
JP (1) JP2008527584A (fr)
CN (1) CN101138049A (fr)
WO (1) WO2006073308A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101625896A (zh) * 2008-07-07 2010-01-13 三星电子株式会社 具有自适应控制的多层非易失性存储器
CN107230676A (zh) * 2017-05-22 2017-10-03 复旦大学 高读出电流的非挥发铁电存储器及其操作方法
CN109564764A (zh) * 2016-06-29 2019-04-02 美光科技公司 写入到交叉点非易失性存储器
CN114144756A (zh) * 2019-07-26 2022-03-04 美光科技公司 使用写入事务数据选择读取电压

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9697913B1 (en) * 2016-06-10 2017-07-04 Micron Technology, Inc. Ferroelectric memory cell recovery
US9721639B1 (en) * 2016-06-21 2017-08-01 Micron Technology, Inc. Memory cell imprint avoidance

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JPH09245485A (ja) * 1996-03-06 1997-09-19 Hitachi Ltd 強誘電体記憶装置
JP3720983B2 (ja) * 1998-06-23 2005-11-30 株式会社東芝 強誘電体メモリ
NO312699B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Adressering av minnematrise
JP4214708B2 (ja) * 2002-03-27 2009-01-28 セイコーエプソン株式会社 強誘電体記憶装置及びその駆動方法
JP4024196B2 (ja) * 2003-09-30 2007-12-19 三洋電機株式会社 強誘電体メモリ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101625896A (zh) * 2008-07-07 2010-01-13 三星电子株式会社 具有自适应控制的多层非易失性存储器
CN101625896B (zh) * 2008-07-07 2015-09-02 三星电子株式会社 具有自适应控制的多层非易失性存储器
CN109564764A (zh) * 2016-06-29 2019-04-02 美光科技公司 写入到交叉点非易失性存储器
CN107230676A (zh) * 2017-05-22 2017-10-03 复旦大学 高读出电流的非挥发铁电存储器及其操作方法
CN107230676B (zh) * 2017-05-22 2020-05-26 复旦大学 高读出电流的非挥发铁电存储器及其操作方法
CN114144756A (zh) * 2019-07-26 2022-03-04 美光科技公司 使用写入事务数据选择读取电压
CN114144756B (zh) * 2019-07-26 2024-05-24 美光科技公司 使用写入事务数据选择读取电压

Also Published As

Publication number Publication date
WO2006073308A1 (fr) 2006-07-13
EP1834336A1 (fr) 2007-09-19
JP2008527584A (ja) 2008-07-24

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Open date: 20080305