CN101136429B - 半导体薄膜、薄膜晶体管、其制造方法以及半导体薄膜的制造装置 - Google Patents
半导体薄膜、薄膜晶体管、其制造方法以及半导体薄膜的制造装置 Download PDFInfo
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- CN101136429B CN101136429B CN200710148148XA CN200710148148A CN101136429B CN 101136429 B CN101136429 B CN 101136429B CN 200710148148X A CN200710148148X A CN 200710148148XA CN 200710148148 A CN200710148148 A CN 200710148148A CN 101136429 B CN101136429 B CN 101136429B
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- Plasma & Fusion (AREA)
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006231054A JP5090690B2 (ja) | 2006-08-28 | 2006-08-28 | 半導体薄膜の製造方法、薄膜トランジスタの製造方法、及び半導体薄膜の製造装置 |
JP2006-231054 | 2006-08-28 | ||
JP2006231054 | 2006-08-28 |
Publications (2)
Publication Number | Publication Date |
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CN101136429A CN101136429A (zh) | 2008-03-05 |
CN101136429B true CN101136429B (zh) | 2013-03-27 |
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JP2012043819A (ja) * | 2008-08-29 | 2012-03-01 | Ulvac Japan Ltd | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
TWM421516U (en) | 2011-07-05 | 2012-01-21 | Chunghwa Picture Tubes Ltd | Top-gate type transistor array substrate |
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TW490770B (en) | 1999-06-28 | 2002-06-11 | Hitachi Ltd | Poly crystal semiconductor thin film substrate, its manufacture method, semiconductor apparatus and electronic apparatus |
JP3460678B2 (ja) * | 2000-06-02 | 2003-10-27 | 松下電器産業株式会社 | レーザ加工方法および加工装置 |
JP2002158184A (ja) * | 2000-11-16 | 2002-05-31 | Mitsubishi Electric Corp | レーザ熱処理用のレーザ光学系 |
JP4987198B2 (ja) | 2001-04-23 | 2012-07-25 | 株式会社ジャパンディスプレイセントラル | 多結晶シリコン薄膜トランジスタの製造方法 |
JP2003001470A (ja) * | 2001-06-22 | 2003-01-08 | Canon Inc | レーザ加工装置およびレーザ加工方法 |
JP4100962B2 (ja) * | 2002-05-30 | 2008-06-11 | 三菱電機株式会社 | 半導体装置の製造方法 |
US7247527B2 (en) * | 2003-07-31 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, and laser irradiation apparatus |
US7358165B2 (en) * | 2003-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing semiconductor device |
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US7341907B2 (en) * | 2005-04-05 | 2008-03-11 | Applied Materials, Inc. | Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon |
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CN101136429A (zh) | 2008-03-05 |
TW200814163A (en) | 2008-03-16 |
KR100915160B1 (ko) | 2009-09-03 |
JP2008053642A (ja) | 2008-03-06 |
JP5090690B2 (ja) | 2012-12-05 |
US7732815B2 (en) | 2010-06-08 |
US20080048187A1 (en) | 2008-02-28 |
KR20080019548A (ko) | 2008-03-04 |
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