CN101127314A - 半导体元件的安装方法及半导体器件的制造方法 - Google Patents

半导体元件的安装方法及半导体器件的制造方法 Download PDF

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Publication number
CN101127314A
CN101127314A CNA200710008067XA CN200710008067A CN101127314A CN 101127314 A CN101127314 A CN 101127314A CN A200710008067X A CNA200710008067X A CN A200710008067XA CN 200710008067 A CN200710008067 A CN 200710008067A CN 101127314 A CN101127314 A CN 101127314A
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semiconductor element
wiring plate
temperature
installation method
wiring
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CN101127314B (zh
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藤森城次
作山诚树
赤松俊也
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Socionext Inc
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Fujitsu Ltd
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Abstract

一种半导体元件的安装方法及半导体器件的制造方法，该安装方法用以经由不含铅(Pb)的外部连接凸电极将半导体元件安装在布线板上。该安装方法包括如下步骤：应用回流热处理以使半导体元件的外部连接凸电极与布线板相连接，然后以小于等于0.5℃/s的冷却速率冷却相连接的半导体元件和布线板。

Description

半导体元件的安装方法及半导体器件的制造方法
技术领域
本发明总的涉及半导体元件的安装方法以及半导体器件的制造方法，更具体涉及经由不含铅(Pb)的外部连接凸电极将半导体元件安装在布线板上的半导体元件的安装方法以及半导体器件的制造方法。
背景技术
从前至今，已知具有如下结构的半导体器件：经由不含铅(Pb)的外部连接凸电极、即所谓的无铅焊料凸点，以面朝下的方式将半导体元件以倒装芯片方法安装在布线板上。
图1为示出应用于这种半导体器件的半导体元件的结构的横截面图。图2为图1中虚线所包围的部分的放大图。
参照图1和图2，为了制造半导体元件，所谓的晶片工艺被应用于由硅(Si)制成的半导体衬底1。在半导体衬底1的主表面上形成诸如晶体管的有源元件或者诸如电容器的无源元件(未示出)。此外，经由绝缘层例如二氧化硅(SiO2)层2，在半导体衬底1的另一主表面上设置多层互连层3。
如图2所示，通过经由层间绝缘膜5叠置由铝(Al)或铜(Cu)制成的多个布线层4来形成这种多层互连层3。通过层间连接部分连接上和下布线层4。
使用所谓的低K材料作为层间绝缘膜5的材料，低K材料即具有低介电常数的材料，例如FSG(氟硅玻璃，其为掺氟的硅玻璃)、SiOC(其为添加C的二氧化硅)、或有机树脂，以降低形成于布线中的电容以及提高电信号的输送速度。
形成于半导体衬底1上的诸如有源元件或无源元件的功能元件经由多层互连层3而彼此连接，从而形成执行预期功能的电子电路。
由铝(Al)制成的多个电极焊盘11选择性地设置在多层互连层3的上部，以连接至形成多层互连层3的布线4。
钝化层6选择性地设置在多层互连层3上。钝化层6由诸如二氧化硅(SiO2)或氮化硅(SiN)等无机绝缘材料制成。在钝化层6上选择性地形成开口，以暴露电极焊盘11的中心部分。
此外，为了保护半导体元件的表面，设置有机绝缘膜7以覆盖无机绝缘层6的上表面和位于电极焊盘11上的无机绝缘层6的边缘表面。
有机绝缘膜7的材料选自有机绝缘材料，例如聚酰亚胺、BCB(苯丙环丁烯)、酚醛树脂或聚苯并双噁唑。
由例如钛(Ti)/铜(Cu)制成的UBM(凸点下金属化层)8设置在电极焊盘11的上表面。从电极焊盘11上表面的没有设置无机绝缘层6和有机绝缘膜7的部分起至略高于有机绝缘膜7上表面的位置，沿竖直方向设置UBM8。UBM8覆盖有机绝缘膜7的端表面。
具有近似球形结构的外部连接凸电极9设置在UBM8的上表面上。外部连接凸电极9、即所谓的焊料凸点由不含铅(Pb)的焊料例如锡(Sn)-银(Ag)或含有铜(Cu)的锡(Sn)-银(Ag)制成。
图3为示出图1所示的半导体元件10以倒装芯片方法安装在布线板上的状态的横截面图。参照图3，半导体元件10以倒装芯片方法面朝下地安装在布线板20上。
布线板20是由例如玻璃环氧材料或聚酰亚胺胶带制成的有机积层板。在布线板20的上表面上，选择性地设置多个电极焊盘21并且设置焊料抗蚀剂22，焊料抗蚀剂22选择性设有开口以暴露电极焊盘21的中心部分。
外部连接凸电极9连接至设置在布线板20上的电极焊盘21。此外，在半导体元件10和布线板20之间设置所谓的底部填充材料(underfill material)23。由焊料制成的多个外部连接凸电极24设置在布线板20的下表面上。
具有这种结构的半导体器件通过如下步骤制造：
首先，以面朝下的方式将半导体元件10以倒装芯片方法安装在布线板20上。
然后，通过回流热处理使外部连接凸电极9和预先设置在布线板20的电极焊盘21上的初始焊料(预涂焊料)熔化，以使半导体元件10的外部连接凸电极9与布线板20连接。初始焊料不含有铅(Pb)。
之后，在半导体元件10和布线板20之间提供底部填充材料23，然后使其固化。
最后，在布线板20的下表面上设置焊球，以通过回流热处理和冷却处理使外部连接凸电极24被连接。
同时，日本特开专利申请公开No.2006-111898揭示了具有如下结构的电子元件。即，将基部金属上的镀锡膜在室温下进行氧化或水化处理，并在镀锡膜的表面上形成氧化物或氢氧化物的表面层，以使表面层致密且均匀，从而抑制了锡晶须的生长。
此外，日本特开专利申请公开No.11-354919揭示了一种电子电路板的制造方法，其中：通过使用包含铋(Bi)的无铅(Pb)焊料连接电子元件与电路板。在这种方法中，以大约10-20℃/s的冷却速度冷却焊料，以使电子元件与电路板连接。
此外，国际专利公开No.2004/047167揭示了一种半导体器件，其中：在布线板中形成通路电极(through-electrode)以电连接形成在布线板基部衬底的布线层形成表面上的布线层与形成在芯片安装表面上的电极，其中半导体芯片以倒装芯片方法安装在布线板上；以及基部衬底的热膨胀系数等于半导体芯片的热膨胀系数，或者小于布线层的热膨胀系数。
如上所述，在半导体器件中经由不含铅(Pb)的外部连接凸电极9将半导体元件10以倒装芯片方法安装在布线板20上，在这种半导体器件的制造过程中，通过回流热处理使外部连接凸电极9和不含铅(Pb)且预先设置在布线板20的电极焊盘21上的初始焊料(预涂焊料)熔化，以使半导体元件10的外部连接凸电极9与布线板20连接。之后，冷却外部连接凸电极9和初始焊料，以使其成为固体。
半导体元件10的硅衬底的热膨胀系数大约为3至4ppm/℃。另一方面，由有机材料板制成的布线板20的热膨胀系数大约为10至17ppm/℃。因此，布线板20的热膨胀系数大于半导体元件10的热膨胀系数。
此外，外部连接凸电极9和初始焊料由不含铅(Pb)的焊料制成。如果外部连接凸电极9和初始焊料由例如锡(Sn)-银(Ag)形成的焊料或锡(Sn)-银(Ag)-铜(Cu)形成的焊料制成，则焊料的熔点大约为217至220℃。
因此，在焊料被加热到高于熔点的温度例如250℃的情况下，焊料熔化，从而遵循由于半导体元件10和布线板20的热膨胀而导致变形。
在回流热处理中，将设置有半导体元件10的布线板20移到回流处理设备中以进行处理，在回流处理设备中具有加热器的多个加热区(块)排成行。控制回流处理设备中位于每个加热区的加热器的温度，以执行加热处理和降温处理、即冷却处理。
图4为示出在用于将半导体元件10的外部连接凸电极9与布线板20连接的回流热处理以及在回流热处理后冷却速率大约为0.7℃/s的冷却处理中，图3所示的半导体器件的温度变化的坐标图。该坐标图的水平轴表示时间(秒)，该坐标图的竖直轴表示温度(℃)。
换句话说，在回流热处理中，保持大约150℃的温度达指定时间。焊剂(flux)被激活并且外部连接凸电极9和初始焊料的表面上的氧化膜被去除。之后，进行加热直到温度高于焊料的熔点，例如250℃。
在焊料熔化后，停止加热或将温度降低至等于或低于焊料的熔点(217至220℃)，从而使焊料成为固体。在焊料凝固后，从焊料的熔点开始逐步地冷却到接近常温的温度。
在相关现有技术中，为了提高制造步骤的效率，采用大约0.7℃/s的冷却速率。如上所述，不含铅(Pb)的焊料的熔点高于含铅(Pb)的焊料的熔点。因此，为了高效地冷却到接近常温的温度，在相关现有技术中采用大约0.7℃/s的冷却速率。
然而，如果半导体器件以大约0.7℃/s的冷却速率冷却，基于半导体元件10与布线板20之间的热膨胀系数差，明显地产生应变/应力。换句话说，由于布线板20的热膨胀系数大于半导体元件10的热膨胀系数，所以在进行冷却处理时，应力从布线板20(其因温度变化而导致的膨胀和收缩较大)施加至半导体元件10。
由于在焊料(外部连接凸电极9和初始焊料)为固体时发生这种情况，所以对焊料来说不能缓冲从布线板20施加至半导体元件10的应力。因此，从布线板20施加至半导体元件10的应力可能施加至多层布线层3的由低K材料制成的层间绝缘膜5。
因此，经由层间绝缘膜5而彼此叠置的布线层4可能发生分层，从而在半导体器件中可能存在电缺陷。
发明内容
因此，为解决上述一个或多个问题，本发明的实施例提供一种新颖且实用的半导体元件的安装方法和半导体器件的制造方法。
更具体地，本发明的实施例提供一种半导体元件的安装方法和一种半导体器件的制造方法，当经由不含铅(Pb)的外部连接凸电极将半导体元件安装在布线板上时，能够减小从布线板施加至包括层间绝缘膜(其由低K材料形成)的半导体元件的多层布线部分的应力，从而能够防止分层，以及能够提高半导体器件的制造成品率。
本发明的一个方案提供一种半导体元件的安装方法，用以经由不含铅(Pb)的外部连接凸电极将半导体元件安装在布线板上，该安装方法包括如下步骤：应用回流热处理使半导体元件的外部连接凸电极与布线板相连接，然后以小于等于0.5℃/s的冷却速率冷却相连接的半导体元件和布线板。
本发明的另一方案提供一种半导体元件的安装方法，用以经由外部连接凸电极将半导体元件安装在布线板上，该安装方法包括如下步骤：应用回流热处理使半导体元件的外部连接凸电极与布线板相连接，然后应用分步冷却处理；其中，在分步冷却处理中：冷却相连接的半导体元件和布线板，以使温度降低；在温度达到指定温度后，保持指定温度达指定时间；在指定时间过后，再次冷却半导体元件和布线板，以进一步降低温度。在上述半导体元件的安装方法中，分步冷却处理可被重复一次或多次。指定温度可在大于等于大约80℃且小于等于大约150℃的范围内。指定时间可大于等于120秒。
本发明的另一方案提供一种半导体器件的制造方法，包括如下步骤：应用回流热处理使布线板与半导体元件的不含铅(Pb)的外部连接凸电极相连接，然后以小于等于0.5℃/s的冷却速率冷却半导体元件和布线板。
本发明的另一方案提供一种半导体器件的制造方法，包括如下步骤：应用回流热处理使半导体元件的外部连接凸电极与布线板连接，然后应用分步冷却处理；其中，在分步冷却处理中：冷却相连接的半导体元件和布线板，以降低温度；在温度达到指定温度后，保持指定温度达指定时间；在指定时间过后，再次冷却半导体元件和布线板，以进一步降低温度。
根据上述半导体元件的安装方法或上述半导体器件的制造方法，当经由不含铅(Pb)的外部连接凸电极将半导体元件安装在布线板上时，能够减少从布线板施加至包括层间绝缘膜(其由低K材料形成)的半导体元件的多层布线部分的应力，从而能够防止分层，以及能够提高半导体器件的制造成品率。
从下面结合附图的详细描述中，本发明的其它目的、特征和优点将变得更为明显。
附图说明
图1为示出半导体元件的结构的横截面图；
图2为图1中虚线所包围的部分的放大图；
图3为示出图1所示的半导体元件以倒装芯片方法安装在布线板上的状态的横截面图；
图4为示出在回流热处理以及回流热处理后冷却速率大约为0.7℃/s的冷却处理中图3所示的半导体器件的温度变化的坐标图；
图5为示出在回流热处理以及回流热处理后冷却速率大约为0.5℃/s的冷却处理中图3所示的半导体器件的温度变化的坐标图；
图6为示出在回流热处理以及回流热处理后冷却速率大约为0.3℃/s的冷却处理中图3所示的半导体器件的温度变化的坐标图；
图7为示出在回流热处理以及回流热处理后的冷却处理(第一步冷却处理)中图3所示的半导体器件的温度变化的坐标图；以及
图8为示出在回流热处理以及回流热处理后的冷却处理(第二步冷却处理)中图3所示的半导体器件的温度变化的坐标图。
具体实施方式
下面参照图5至图8对本发明的各实施例进行描述。
本发明的各实施例有关于回流热处理及回流热处理后的冷却处理。此处，将回流热处理应用于参照图1至图3所讨论的方法中，由此经由外部连接凸电极9(其由不含铅(Pb)的所谓无铅(Pb)焊料制成)将半导体元件10以倒装芯片方法安装在布线板20上，从而在将半导体元件10以倒装芯片方法安装在布线板20上之后使半导体元件10的外部连接凸电极9与布线板20连接。
更具体地，在通过回流热处理熔化外部连接凸电极9和不含铅(Pb)且预先设置在布线板20的电极焊盘21上的初始焊料(预涂焊料，未示出)以使它们彼此连接之后，在将焊料冷却并使其成为固体以及将半导体器件冷却至接近常温时，作为冷却的方法应用本发明的第一实施例或第二实施例。
即使在回流热处理后通过冷却处理使焊料成为固体并且将半导体器件冷却至接近常温，通过这种方法能够防止产生基于半导体元件10与布线板20的热膨胀系数差而产生的应力、即从布线板20施加至半导体元件10的多层布线层3的应力，因此不会发生多层布线层3的分层。
由于半导体元件10和布线板20的结构与参照图1至图3所讨论的结构相同，所以在下面的说明中省略对其的说明。
本发明的发明人发现，通过逐步地降低冷却速率、即逐步地延长温度达到指定冷却温度的时间能够解决上述问题。
[本发明的第一实施例]
在本发明的第一实施例中，通过将逐步冷却速率设置为大约0.5℃/s(低于相关技术的冷却速率、即大约0.7℃/s)来进行冷却处理。
图5为示出在用于将半导体元件10的外部连接凸电极9和布线板20连接的回流热处理以及回流热处理后冷却速率大约为0.5℃/s的冷却处理中，图3所示的半导体器件的温度变化的坐标图。该坐标图的水平轴表示时间(秒)，该坐标图的竖直轴表示温度(℃)。
换句话说，在回流热处理中，保持大约150℃的温度达指定时间。焊剂被激活并且外部连接凸电极9和初始焊料的表面上的氧化膜被去除。之后，进行加热直到温度高于焊料的熔点，例如250℃。
在回流热处理开始后经过大约240秒时，温度达到大约250℃。此时，焊料熔化。在焊料熔化之后，停止加热并且将温度降低至等于或低于焊料的熔点(217至220℃)，由此使焊料成为固体。在焊料凝固之后，从焊料的熔点逐步地冷却至接近常温的温度。
在本发明的第一实施例中，采用大约0.5℃/s的冷却速率。
结果如图5所示，在回流热处理开始后经过大约650秒时，温度达到大约50℃。
在温度达到大约50℃之后，将连接到布线板20的半导体元件10取到回流处理设备的外面，以进行自冷(自然冷却)。
之后，在半导体元件10和布线板20之间提供底部填充材料23，然后使其固化。最后，在布线板20的下表面上设置焊球，以使外部连接凸电极24被连接。
[本发明的第二实施例]
在本发明的第二实施例中，通过将逐步冷却速率设置为大约0.3℃/s(低于相关技术的冷却速率、即大约0.7℃/s)来进行冷却处理。
图6为示出在用于将半导体元件10的外部连接凸电极9与布线板20连接的回流热处理以及回流热处理后冷却速率大约为0.3℃/s的冷却处理中，图3所示的半导体器件的温度变化的坐标图。该坐标图的水平轴表示时间(秒)，该坐标图的竖直轴表示温度(℃)。
换句话说，在回流热处理中，保持大约150℃的温度达指定时间。焊剂被激活并且外部连接凸电极9和初始焊料的表面上的氧化膜被去除。之后，进行加热直到温度高于焊料的熔点，例如250℃。
在回流热处理开始后经过大约240秒时，温度达到大约250℃。此时，焊料熔化。在焊料熔化之后，停止加热并且将温度降低至等于或低于焊料的熔点(217至220℃)，由此使焊料成为固体。在焊料凝固之后，从焊料的熔点逐步地冷却至接近常温的温度。
在本发明的第二实施例中，采用大约0.3℃/s的冷却速率。
结果如图6所示，在回流热处理开始后经过大约880秒时，温度达到大约50℃。
在温度达到大约50℃之后，将连接到布线板20的半导体元件10取到回流处理设备的外面，以进行自冷(自然冷却)。
之后，在半导体元件10和布线板20之间提供底部填充材料23，然后使其固化。最后，在布线板20的下表面上设置焊球，以使外部连接凸电极24被连接。
本发明的发明人检验了通过本发明的上述实施例制造的半导体器件的半导体元件10的多层布线层3。发明人发现在经由层间绝缘膜5(其由低K材料制成)叠置的布线层4处没有分层。
在由JEDEC(Joint Electron Device Engineering Council，美国电子工程设计发展联合协会)-标准3限定的条件下，发明人也进行了100次循环的温度冲击实验作为环境实验、吸湿实验以及3次回流实验。结果，发明人发现没有发生破坏，例如由施加至经由层间绝缘膜(其由低K材料制成)叠置的布线层4的应力而导致的分层。
因此，通过将冷却速率设置为大约0.5℃/s或0.3℃/s(低于相关现有技术的冷却速率、即大约0.7℃/s)，能够防止伴随冷却的进行基于半导体元件10和布线板20的收缩或变形而导致的从布线板20施加至半导体元件10的应力的产生。
由此，减小了从布线板20施加至半导体元件10的经由层间绝缘膜5(其由低K材料制成)叠置的布线层4的应力，从而能够防止诸如分层等破坏。
[本发明的第三实施例]
在本发明的上述第一和第二实施例中，在回流热处理之后的冷却处理中，通过降低冷却速率，减小了从布线板20施加至半导体元件10的多层布线层3中的层间绝缘膜5(其由具有低强度的低K材料制成)的应力，从而防止了诸如分层等破坏。
然而，在这些实施例中，由于冷却速率降低的较多，冷却时间变长，从而增加了半导体器件的制造成本。
因此，在本发明的第三实施例中，冷却速率以分阶段的方式、即以分步的方式变化，从而在不发生急剧温度变化的情况下缩短冷却处理的时间。由于没有发生急剧的温度变化，所以减小了施加至半导体元件10的经由层间绝缘膜5(其由低K材料制成)叠置的布线层4的应力，从而防止诸如分层等破坏并能够防止冷却时间变长。
更具体地，在回流热处理后的冷却处理期间，将温度保持在指定温度达规定时间，然后再次降低温度。在冷却处理中，至少执行一次这种分步方法，以使半导体器件冷却至大约50℃。
图7为示出在用于将半导体元件10的外部连接凸电极9与布线板20连接的回流热处理以及回流热处理后的冷却处理(第一步冷却处理)中，图3所示的半导体器件的温度变化的坐标图。该坐标图的水平轴表示时间(秒)，该坐标图的竖直轴表示温度(℃)。
换句话说，在回流热处理中，保持大约150℃的温度达指定时间。焊剂被激活并且外部连接凸电极9和初始焊料的表面上的氧化膜被去除。之后，进行加热直到温度高于焊料的熔点，例如250℃。
在回流热处理开始后经过大约240秒时，温度达到大约250℃。此时，焊料熔化。在焊料熔化之后，停止加热并且将温度降低至等于或低于焊料的熔点(217至220℃)，由此使焊料成为固体。在焊料凝固之后，从焊料的熔点冷却至接近常温的温度。
在本发明的第三实施例中，采用大约0.7℃/s的冷却速率。在回流热处理开始后经过大约410秒时，温度达到大约150℃，然后将温度保持在大约150℃达大约300秒。
之后，以大约0.7℃/s的冷却速率进行冷却，直到温度达到大约50℃。
结果如图7所示，在回流热处理开始后经过大约810秒时，温度达到大约50℃。
在温度达到大约50℃之后，将连接到布线板20的半导体元件10取到回流处理设备的外面，以进行自冷(自然冷却)。
之后，在半导体元件10和布线板20之间提供底部填充材料23，然后使其固化。最后，在布线板20的下表面上设置焊球，以使外部连接凸电极24被连接。
[本发明的第四实施例]
在本发明的第四实施例以及第三实施例中，在回流热处理之后的冷却处理期间，将温度保持在指定温度达规定时间，然后再次降低温度。在冷却处理中，至少实施一次这种方法，以使半导体器件冷却至大约50℃。
图8为示出在用于将半导体元件10的外部连接凸电极9与布线板20连接的回流热处理以及回流热处理后的冷却处理(第二步冷却处理)中，图3所示的半导体器件的温度变化的坐标图。该坐标图的水平轴表示时间(秒)，该坐标图的竖直轴表示温度(℃)。
换句话说，在回流热处理中，保持大约150℃的温度达指定时间。焊剂被激活并且外部连接凸电极9和初始焊料的表面上的氧化膜被去除。之后，进行加热直到温度高于焊料的熔点，例如250℃。
在回流热处理开始后经过大约240秒时，温度达到大约250℃。此时，焊料熔化。在焊料熔化之后，停止加热并且将温度降低至等于或低于焊料的熔点(217至220℃)，由此使焊料成为固体。在焊料凝固之后，从焊料的熔点冷却至接近常温的温度。
在本发明的第四实施例中，采用大约0.7℃/s的冷却速率。在回流热处理开始后经过大约460秒时，温度达到大约120℃，然后将温度保持在大约120℃达300秒。
之后，以大约0.7℃/s的冷却速率进行冷却，直到温度达到大约50℃。
结果如图8所示，在回流热处理开始后经过大约860秒时，温度达到大约50℃。
在温度达到大约50℃之后，将连接到布线板20的半导体元件10取到回流处理设备的外面，以进行自冷(自然冷却)。
之后，在半导体元件10和布线板20之间提供底部填充材料23，然后使其固化。最后，在布线板20的下表面上设置焊球，以使外部连接凸电极24被连接。
在图7和图8示出的第三和第四实施例中，在回流处理设备中执行保持指定温度(在图7示出的第三实施例中大约为150℃，或者在图8示出的第四实施例中大约为120℃)。然而，本发明并不局限于这种实例。
例如，在温度达到这种指定温度(在图7示出的第三实施例中大约为150℃，或者在图8示出的第四实施例中大约为120℃)后，可将半导体元件10和布线板20从回流处理设备移至恒温室中，以使温度保持在恒温室中的指定温度。
在这种情况下，在温度达到大约50℃之后，将连接到布线板20的半导体元件10取到恒温室的外面，以进行自冷(自然冷却)。
本发明的发明人检验了通过本发明的上述实施例制造的半导体器件的半导体元件10的多层布线层3。发明人发现在经由层间绝缘膜5(其由低K材料制成)叠置的布线层4处没有分层。
在由JEDEC(Joint Electron Device Engineering Council，美国电子工程设计发展联合协会)-标准3限定的条件下，发明人也进行了100次循环的温度冲击实验作为环境实验、吸湿实验以及3次回流实验。结果，发明人发现没有发生破坏，例如由施加至经由层间绝缘膜(其由低K材料制成)叠置的布线层4的应力而导致的分层。
通常，在应力的作用下产生恒应变，并且如果保持该应变，则通过蠕变现象可减小应力。
在本实例中，考虑到这种蠕变现象，在回流热处理后的冷却处理中保持指定温度达指定时间，以减小应力。之后再次降低温度，从而使冷却速率以分步的方式变化。
由此，伴随冷却处理，焊料能够遵循半导体元件10和布线板20的收缩或变形，使得从布线板施加至半导体元件的应力被缓冲。因此，从布线板20施加至半导体元件10的经由层间绝缘膜5(其由低K材料制成)叠置的布线层4的应力减小，从而防止了诸如分层等破坏。
此外，在本发明的第一或第二实施例中通过降低冷却速率而使冷却时间变长，从而增加了制造成本，而在本发明的第三实施例中不必使冷却速率减慢，从而能够缩短处理时间。
优选地，将大约80℃至150℃范围内的温度设置为要保持的指定温度。
本发明的发明人发现，如果要保持的温度低于大约80℃，则在保持指定温度时应力施加至经由层间绝缘膜5叠置的布线层4，因此发生分层。
此外，如果要保持的温度高于大约150℃，即使在温度高于大约150℃时防止了分层，由于冷却也会导致焊料再次变形，而从布线板20施加至半导体元件10的应力也不能被缓冲，因此不能防止分层。由此，可以得出在温度等于或低于大约150℃时必须以分步的方式改变冷却速率。
因此，优选将大约80℃至150℃范围内的温度设置为要保持的指定温度。
此外，优选保持指定温度的时间大于等于大约120秒。
如果保持指定温度的时间小于大约120秒，则在基于蠕变现象减小应力之前进行冷却进程，因此焊料不能缓冲从布线板20施加至半导体元件10的应力，也不能防止分层。
另一方面，如果保持指定温度的时间大于等于大约120秒，则从布线板20施加至半导体元件10的应力能够被充分地减小。因此，伴随冷却的进行焊料遵循半导体元件10或布线板20的收缩或变形，从而从布线板20施加至半导体元件10的应力能够被缓冲。因此，从布线板20施加至半导体元件10的经由层间绝缘膜5(其由低-K材料制成)叠置的布线层4的应力减小，从而能够防止诸如分层等破坏。
因此，从防止诸如分层等破坏的角度来看，优选保持指定温度的时间更长。然而，如果保持指定温度的时间过长，则处理时间变长，从而增加制造成本。因此，根据处理时间的上限来设置保持指定温度的时间上限。
在本实例中保持指定温度达指定时间、然后再次降低温度的步骤次数不限于一次，而可以是多次。从防止诸如分层等破坏的角度来看，优选步骤次数越多越好。然而，如果步骤次数过多，则处理时间变长，从而增加制造成本。因此，根据处理时间的上限来设置步骤次数的上限。
所以，在本发明的第三或第四实施例中，冷却速率以分步的方式变化。因此，在本发明的第三或第四实施例以及第一或第二实施例中，从布线板20施加至半导体元件10的经由层间绝缘膜5(其由低-K材料制成)叠置的布线层4的应力减小，从而能够防止诸如分层等破坏。此外，能够缩短处理时间。
因此，如上所述，根据本发明的各实施例，当经由不含铅(Pb)的外部连接凸电极将半导体元件安装在布线板上时，能够减小从布线板施加至包括层间绝缘膜(其由低K材料形成)的半导体元件的多层布线部分的应力，从而能够防止分层。
此外，根据本发明的各实施例，可以使用便宜的有机积层板作为布线板。因此，能够节省制造成本。
而且，根据本发明的各实施例，为了在将半导体元件安装在布线板上时防止上述的分层，不必对半导体元件和布线板应用专门的结构并且不必使用专门的安装设备。因此，在将半导体元件安装在布线板上时能够容易地防止半导体元件中的分层。
本发明不限于上述各实施例，而是在不脱离本发明范围的情况下可做出各种变化和修改。

Claims (15)

1.一种半导体元件的安装方法，经由不含铅的外部连接凸电极将该半导体元件安装在布线板上，该安装方法包括以下步骤：
应用回流热处理使该半导体元件的外部连接凸电极与该布线板相连接，然后以小于等于0.5℃/s的冷却速率冷却相连接的该半导体元件和该布线板。
2.如权利要求1所述的半导体元件的安装方法，其中该冷却速率大约为0.5℃/s。
3.如权利要求1所述的半导体元件的安装方法，其中该外部连接凸电极由不含铅的焊料制成。
4.如权利要求1所述的半导体元件的安装方法，其中该布线板由有机材料制成。
5.如权利要求4所述的半导体元件的安装方法，其中该半导体元件包括多层布线结构，在所述多层布线结构中经由多个层间绝缘膜叠置多个布线层，所述层间绝缘膜由具有低介电常数的材料制成。
6.一种半导体元件的安装方法，经由外部连接凸电极将该半导体元件安装在布线板上，该安装方法包括以下步骤：
应用回流热处理使该半导体元件的外部连接凸电极与该布线板相连接，然后应用分步冷却处理；
其中，在该分步冷却处理中：
冷却相连接的该半导体元件和该布线板，以降低温度；
在温度达到指定温度后，保持该指定温度达指定时间；
在该指定时间过后，再次冷却该半导体元件和该布线板，以进一步降低温度。
7.如权利要求6所述的半导体元件的安装方法，其中该分步冷却处理被重复一次或多次。
8.如权利要求6所述的半导体元件的安装方法，其中该指定温度在大于等于大约80℃且小于等于大约150℃的范围内。
9.如权利要求6所述的半导体元件的安装方法，其中该指定时间大于等于120秒。
10.如权利要求6所述的半导体元件的安装方法，其中该指定时间大于等于300秒。
11.如权利要求6所述的半导体元件的安装方法，其中该外部连接凸电极由不含铅的焊料制成。
12.如权利要求6所述的半导体元件的安装方法，其中该布线板由有机材料制成。
13.如权利要求12所述的半导体元件的安装方法，其中该半导体元件包括多层布线结构，在所述多层布线结构中经由多个层间绝缘膜叠置多个布线层，所述层间绝缘膜由具有低介电常数的材料制成。
14.一种半导体器件的制造方法，包括如下步骤：
应用回流热处理使布线板与半导体元件的不含铅的外部连接凸电极相连接，然后以小于等于0.5℃/s的冷却速率冷却该半导体元件和该布线板。
15.一种半导体器件的制造方法，包括如下步骤：
应用回流热处理使半导体元件的外部连接凸电极与布线板相连接，然后应用分步冷却处理；
其中，在该分步冷却处理中：
冷却相连接的该半导体元件和该布线板，以降低温度；
在温度达到指定温度后，保持该指定温度达指定时间；
在该指定时间过后，再次冷却该半导体元件和该布线板，以进一步降低温度。
CN200710008067XA 2006-08-18 2007-02-09 半导体元件的安装方法及半导体器件的制造方法 Expired - Fee Related CN101127314B (zh)

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