CN101127308A - 一种室温条件下沉积非晶硫化锌薄膜的方法 - Google Patents
一种室温条件下沉积非晶硫化锌薄膜的方法 Download PDFInfo
- Publication number
- CN101127308A CN101127308A CNA2007100459671A CN200710045967A CN101127308A CN 101127308 A CN101127308 A CN 101127308A CN A2007100459671 A CNA2007100459671 A CN A2007100459671A CN 200710045967 A CN200710045967 A CN 200710045967A CN 101127308 A CN101127308 A CN 101127308A
- Authority
- CN
- China
- Prior art keywords
- substrate
- zinc
- sulfide
- zns film
- room temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000011701 zinc Substances 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000008139 complexing agent Substances 0.000 claims abstract description 8
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229910052945 inorganic sulfide Inorganic materials 0.000 claims abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 239000008367 deionised water Substances 0.000 claims description 21
- 229910021641 deionized water Inorganic materials 0.000 claims description 21
- 238000002604 ultrasonography Methods 0.000 claims description 16
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 14
- 239000005864 Sulphur Substances 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 13
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 10
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 5
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 4
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 4
- 229960001763 zinc sulfate Drugs 0.000 claims description 4
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 150000003751 zinc Chemical class 0.000 claims description 3
- 239000004246 zinc acetate Substances 0.000 claims description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 claims description 2
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- DPLVEEXVKBWGHE-UHFFFAOYSA-N potassium sulfide Chemical compound [S-2].[K+].[K+] DPLVEEXVKBWGHE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- 235000005074 zinc chloride Nutrition 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 58
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract description 46
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 239000005083 Zinc sulfide Substances 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 229910052979 sodium sulfide Inorganic materials 0.000 abstract description 4
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 150000001450 anions Chemical class 0.000 abstract 2
- 150000001768 cations Chemical class 0.000 abstract 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract 1
- 229910017053 inorganic salt Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000003672 processing method Methods 0.000 abstract 1
- 238000000427 thin-film deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- RLLPVAHGXHCWKJ-IEBWSBKVSA-N (3-phenoxyphenyl)methyl (1s,3s)-3-(2,2-dichloroethenyl)-2,2-dimethylcyclopropane-1-carboxylate Chemical compound CC1(C)[C@H](C=C(Cl)Cl)[C@@H]1C(=O)OCC1=CC=CC(OC=2C=CC=CC=2)=C1 RLLPVAHGXHCWKJ-IEBWSBKVSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NSEQHAPSDIEVCD-UHFFFAOYSA-N N.[Zn+2] Chemical compound N.[Zn+2] NSEQHAPSDIEVCD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- JWXSWYYGTJGNCX-UHFFFAOYSA-N ethane-1,2-diamine;zinc Chemical compound [Zn].NCCN JWXSWYYGTJGNCX-UHFFFAOYSA-N 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000001741 organic sulfur group Chemical group 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- -1 rod Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 239000011686 zinc sulphate Substances 0.000 description 1
- 235000009529 zinc sulphate Nutrition 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100459671A CN101127308B (zh) | 2007-09-14 | 2007-09-14 | 一种室温条件下沉积非晶硫化锌薄膜的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100459671A CN101127308B (zh) | 2007-09-14 | 2007-09-14 | 一种室温条件下沉积非晶硫化锌薄膜的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101127308A true CN101127308A (zh) | 2008-02-20 |
CN101127308B CN101127308B (zh) | 2011-10-05 |
Family
ID=39095290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007100459671A Active CN101127308B (zh) | 2007-09-14 | 2007-09-14 | 一种室温条件下沉积非晶硫化锌薄膜的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101127308B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102251235A (zh) * | 2011-07-07 | 2011-11-23 | 中南大学 | 一种铜锌锡硫薄膜的制备方法 |
CN102768905A (zh) * | 2012-06-11 | 2012-11-07 | 湖北大学 | 双壳层ZnO/CdTe/ZnS纳米电缆阵列电极及其制备方法 |
CN103695873A (zh) * | 2013-12-23 | 2014-04-02 | 向勇 | 一种单分子层/多分子层二硫化钼薄膜的制备方法 |
CN106118634A (zh) * | 2016-06-29 | 2016-11-16 | 高大元 | 一种硫化锌薄膜的制备方法 |
CN108069393A (zh) * | 2016-11-14 | 2018-05-25 | 中国科学院上海硅酸盐研究所 | 一种氢化铜薄膜及其制备方法 |
CN108610307A (zh) * | 2018-05-21 | 2018-10-02 | 安徽建筑大学 | 一维新型宽带隙半导体硫基锌配合物的合成方法 |
CN110878202A (zh) * | 2019-11-12 | 2020-03-13 | 重庆大学 | 一种PbS/ZnS核壳结构量子点的原位合成方法 |
CN117361607A (zh) * | 2023-10-25 | 2024-01-09 | 菏泽帝捷化工股份有限公司 | 一种α型硫化锌制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1235808C (zh) * | 2004-01-19 | 2006-01-11 | 上海交通大学 | 纳米管定向排列的硫化锌纳米材料的制备方法 |
-
2007
- 2007-09-14 CN CN2007100459671A patent/CN101127308B/zh active Active
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102251235A (zh) * | 2011-07-07 | 2011-11-23 | 中南大学 | 一种铜锌锡硫薄膜的制备方法 |
CN102768905A (zh) * | 2012-06-11 | 2012-11-07 | 湖北大学 | 双壳层ZnO/CdTe/ZnS纳米电缆阵列电极及其制备方法 |
CN103695873A (zh) * | 2013-12-23 | 2014-04-02 | 向勇 | 一种单分子层/多分子层二硫化钼薄膜的制备方法 |
CN103695873B (zh) * | 2013-12-23 | 2016-03-16 | 向勇 | 一种单分子层/多分子层二硫化钼薄膜的制备方法 |
CN106118634A (zh) * | 2016-06-29 | 2016-11-16 | 高大元 | 一种硫化锌薄膜的制备方法 |
CN108069393A (zh) * | 2016-11-14 | 2018-05-25 | 中国科学院上海硅酸盐研究所 | 一种氢化铜薄膜及其制备方法 |
CN108610307A (zh) * | 2018-05-21 | 2018-10-02 | 安徽建筑大学 | 一维新型宽带隙半导体硫基锌配合物的合成方法 |
CN108610307B (zh) * | 2018-05-21 | 2022-04-08 | 安徽建筑大学 | 一维新型宽带隙半导体硫基锌配合物的合成方法 |
CN110878202A (zh) * | 2019-11-12 | 2020-03-13 | 重庆大学 | 一种PbS/ZnS核壳结构量子点的原位合成方法 |
CN117361607A (zh) * | 2023-10-25 | 2024-01-09 | 菏泽帝捷化工股份有限公司 | 一种α型硫化锌制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101127308B (zh) | 2011-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101127308B (zh) | 一种室温条件下沉积非晶硫化锌薄膜的方法 | |
CN100590893C (zh) | 一种用于光伏电池的ⅱ-ⅵ族半导体薄膜的制备方法 | |
CN111554760B (zh) | 铜锌锡硫薄膜太阳能电池的前驱体溶液及其制备方法与应用 | |
CN104795456B (zh) | 电沉积法制备三带隙铁掺杂铜镓硫太阳能电池材料的方法 | |
CN108321296B (zh) | 基于光子晶体异质结的反式低维钙钛矿太阳能电池的制备方法 | |
CN107946393B (zh) | 基于SnTe作为背电极缓冲层的CdTe薄膜太阳能电池及其制备方法 | |
CN101824638B (zh) | 一种电化学沉积铜锌锡硒半导体薄膜材料的方法 | |
CN104851931B (zh) | 具有梯度结构的碲化镉薄膜太阳能电池及其制造方法 | |
CN111261745B (zh) | 一种钙钛矿电池及其制备方法 | |
CN100552095C (zh) | 一种液相条件下制备硫氰酸亚铜薄膜的方法 | |
CN104465807B (zh) | 一种czts纳米阵列薄膜太阳能光伏电池及其制备方法 | |
CN102637777A (zh) | 一种太阳电池光吸收层Cu2O纳米薄膜的化学制备工艺 | |
CN102637755A (zh) | 一种纳米结构czts薄膜光伏电池及其制备方法 | |
CN105355699B (zh) | 一种多结多叠层碲化镉薄膜太阳能电池及其制备方法 | |
CN107134507B (zh) | 具有梯度成分太阳能电池吸收层铜铟硫硒薄膜的制备方法 | |
CN102992389B (zh) | 一种生长氧化锌纳米线阵列的制备方法 | |
CN100582012C (zh) | 一种高度c轴取向的纳米多孔氧化锌薄膜及其制备方法 | |
Nagamalleswari et al. | EFFECT OF TIN PRECURSORS ON THE DEPOSITION OF Cu 2 ZnSnS 4 THIN FILMS. | |
Chander et al. | Nontoxic and earth-abundant Cu2ZnSnS4 (CZTS) thin film solar cells: A review on high throughput processed methods | |
CN102751096A (zh) | 一种双面透光染料敏化太阳能电池光阳极 | |
CN103173829A (zh) | 一种电化学沉积制备碲化镉半导体薄膜的方法 | |
CN105655421A (zh) | 一种硫化亚锡和硫化铟薄膜太阳能电池及其制备方法 | |
CN113913794B (zh) | 一种AgBiS2薄膜及其制备方法和应用 | |
CN104600144A (zh) | 基于体异质结结构吸光层的高效铜铟镓硒薄膜光电池 | |
CN202221772U (zh) | 一种碲锌镉/多晶硅叠层薄膜太阳能电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161228 Address after: 215499 Changchun South Road, Jiangsu, No. 238, No. Patentee after: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES Address before: 1295 Dingxi Road, Shanghai, No. 200050 Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 215400 No.6 Liangfu Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Jiangsu Institute of advanced inorganic materials Address before: No. 238 Changchun South Road, Taicang City, Jiangsu Province, 215499 Patentee before: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES |