CN105655421A - 一种硫化亚锡和硫化铟薄膜太阳能电池及其制备方法 - Google Patents
一种硫化亚锡和硫化铟薄膜太阳能电池及其制备方法 Download PDFInfo
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- DZXKSFDSPBRJPS-UHFFFAOYSA-N tin(2+);sulfide Chemical compound [S-2].[Sn+2] DZXKSFDSPBRJPS-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 24
- 229910052738 indium Inorganic materials 0.000 claims abstract description 18
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 17
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002070 nanowire Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 239000011733 molybdenum Substances 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000005234 chemical deposition Methods 0.000 claims description 6
- 238000000224 chemical solution deposition Methods 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 34
- 238000003756 stirring Methods 0.000 description 12
- 229910052961 molybdenite Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 239000005864 Sulphur Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000004062 sedimentation Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 5
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 239000007853 buffer solution Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 235000011150 stannous chloride Nutrition 0.000 description 4
- 239000001119 stannous chloride Substances 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 4
- 238000004073 vulcanization Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 238000004500 asepsis Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- SIXIBASSFIFHDK-UHFFFAOYSA-N indium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[In+3].[In+3] SIXIBASSFIFHDK-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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Abstract
本发明公开了一种硫化亚锡和硫化铟薄膜太阳能电池及其制备方法。所述薄膜太阳能电池的结构从下至上依次为：基底1、金属纳米线2、N型β—硫化铟窗口层3、二硫化钼缓冲层4、P型硫化亚锡吸收层5、金属电极6。本发明的优点在于，一是充分利用硫化亚锡、二硫化钼和β—硫化铟禁带宽度的特点，分别将其用作太阳能电池的吸收层、缓冲层和窗口层，有利于充分吸收太阳光；二是利用硫化亚锡、二硫化钼和β—硫化铟都属硫化物的特点，减少它们之间的晶格失配，从而减少缺陷态密度，降低光生载流子的复合，有利于载流子的传输；三是利用金属纳米线来代替传统的导电薄膜，大大减小膜层电阻，有利于载流子的横向收集，极大地提高了太阳能电池的光电转换效率。
Description
技术领域
本发明涉及新能源领域，具体涉及一种硫化亚锡和硫化铟薄膜太阳能电池及其制备方法。
背景技术
硫化亚锡作为一种原料丰富、安全无毒、价格便宜的新型材料，具有巨大的潜在应用前景，一直是科研工作者的研究热点。其光学直接带隙和间接带隙分别为1.2~1.5eV和1.0~1.1eV，与太阳辐射中的可见光有很好的光谱匹配，非常适合用做太阳能电池的光吸收材料，也是一种非常有潜力的太阳能电池材料。硫化铟(In2S3)是一种III-VI族化合物半导体，具有特殊的光电、光致发光等性能，在燃料电池、电化学传感器以及光电功能材料等领域具有很大的潜在应用价值。研究表明，In2S3在不同热处理温度下会呈现三种不同的晶体类型：(1)693K，α—In2S3；(2)1027K，β—In2S3；(3)1027K以上，γ—In2S3。通常β—硫化铟(β—In2S3)是室温下的稳定结构，并且其禁带宽度为2~2.45eV，未掺杂情况下一般呈N型，可以作为铜铟硫、铜铟硒和铜铟镓硒薄膜太阳电池的缓冲层和窗口层。由于β—In2S3具有较大的禁带宽度，对可见光波段的吸收较小，生长过程中需要的温度较低，不会对先前沉积的薄膜层造成破坏，并且无毒性，可能用来替代有毒的硫化镉作为太阳能电池窗口层材料。二硫化钼，禁带宽度约为1.87ev，在硫化亚锡和硫化铟构成的PN结太阳能电池中，可以起到很好的缓冲的作用，因此适合用来作缓冲层材料。
通常有机太阳能电池使用的电极材料是掺锡的氧化铟(ITO)，然而，由于ITO成本高、易碎等问题激发了人们对柔性、低成本导电材料的开发兴趣。因此，研究低成本、制备工艺相对简单能够替代ITO薄膜的透明导电薄膜就显得非常必要。而金属纳米线具有成本低、易制备、可实现柔性化大规模生产等优点，因而符合人们的需求。
发明内容
本发明的目的在于，提供一种硫化亚锡和硫化铟薄膜太阳能电池及其制备方法，以实现制备工艺简单，原材料无毒环保，衬底选择范围广，又能极大地提高太阳能电池的光电转换效率。
为了达到上述目的，本发明技术方案是这样实现的：
一种硫化亚锡和硫化铟薄膜太阳能电池，其结构从下至上依次为：基底、金属纳米线、N型β—硫化铟窗口层、二硫化钼缓冲层、P型硫化亚锡吸收层、金属电极，该结构的优点是，首先，充分利用硫化亚锡、二硫化钼和β—硫化铟禁带宽度的特点，分别将其用作太阳能电池的吸收层、缓冲层和窗口层，有利于充分吸收太阳光；其次，利用硫化亚锡、二硫化钼和β—硫化铟都属硫化物的特点，减少它们之间的晶格失配，从而减少缺陷态密度，降低光生载流子的复合，有利于载流子的传输；最后，利用金属纳米线来代替传统的导电薄膜，大大减小膜层电阻，有利于载流子的横向收集，提高太阳能电池的光电转换效率。
本发明技术方案所提供的一种硫化亚锡和硫化铟薄膜太阳能电池的制备方法包括如下步骤：
取一块干净的基底，利用直流电化学沉积法在基底上制备金属纳米线，然后利用真空蒸发法或超声喷雾法或磁控溅射法或化学浴法在金属纳米线上制备N型β—硫化铟，在N型β—硫化铟上利用双源蒸发法或脉冲电沉积法或化学气相沉积法制备二硫化钼薄膜，在二硫化钼薄膜上利用超声喷雾法或真空蒸发法或化学浴沉积法制备P型硫化亚锡薄膜，最后在硫化亚锡薄膜上丝网印刷金属电极。
附图说明
附图1是本发明提供的一种硫化亚锡和硫化铟薄膜太阳能电池的层结构示意图。
附图1标号说明：
1─基底；
2—金属纳米线；
3—N型β—硫化铟窗口层；
4—二硫化钼缓冲层；
5—P型硫化亚锡吸收层；
6—金属电极。
具体实施方式
下面结合附图1和具体实施例对本发明作进一步说明，但本发明内容不仅限于实施例中涉及的内容。
本发明按附图1所示结构，它包括从下至上依次分布的基底1、金属纳米线2、N型β—硫化铟窗口层3、二硫化钼缓冲层4、P型硫化亚锡吸收层5、金属电极6。
实施例一：
首先，利用直流电化学沉积法在玻璃基底上沉积铜纳米线，电解液由硫酸铜(CuSO4)（90g/L）和硼酸(H3BO3)（45g/L）的水溶液组成，再加入1M的硫酸(H2SO4)溶液调节pH值为PH=2.5。电沉积条件为：外加直流电压0.2V，沉积温度为25℃（室温），沉积时间为90分钟；第二，采用磁控溅射预制铟(In)薄膜和硫化热处理工艺在铜金属纳米线上沉积β—In2S3薄膜。溅射功率为120W，硫化热处理温度为450℃，溅射气体压强在0.5Pa，溅射时间是6min；第三，在真空环境中，以钼金属颗粒和硫粉末为原料，利用双源蒸发法在β—In2S3薄膜上沉积二硫化钼(MoS2)薄膜，通过调节钼金属蒸发的电子束流大小、硫粉末蒸发的温度以及生长时间使原子和原子的含量之比为1:2，钼(Mo)原子和硫(S)原子在加热的β—In2S3薄膜上反应生成MoS2分子，获得层数可控的MoS2薄膜；第四，利用化学浴沉积在缓冲层MoS2上沉积P型硫化亚锡(SnS)薄膜，将氯化亚锡(SnCl2·2H2O)溶解于适量的丙酮当中，然后加入体积比为50%的三乙醇胺溶液并搅拌使之均匀混合，待溶液中出现了白色絮状物时，给溶液中加入一定浓度的硫代乙酰胺溶液，并搅拌均匀。接着通过加入适量的氨水和氯化铵缓冲溶液来调节反应溶液的pH值。最后，用去离子水把溶液体积调节到200ml。将盛有反应溶液的烧杯置于85-2型恒温磁力搅拌器上，在室温下搅拌均匀，然后把沉积有二硫化钼薄膜的样品垂直插入反应溶液中进行SnS薄膜沉积，然后将SnS薄膜样品在250℃退火1h。最后，利用丝网印刷法在硫化亚锡薄膜上沉积金属铝(Al)电极。
实施例二：
首先，利用直流电化学沉积法在硅片基底上沉积银金属纳米线。电解液由硝酸银(AgNO3)（45g/L）和硼酸(H3BO3)（45g/L）的水溶液组成，再加入1M的硝酸(HNO3)溶液调节PH值为PH=2.3。电沉积条件为：外加直流电压0.2V，沉积温度为25℃（室温），沉积时间为30分钟；第二，利用超声喷雾法在银金属纳米线上沉积N型β—In2S3薄膜，采用氯化铟(InCl3·4H2O)和硫脲作为铟(In)源和硫(S)源，按In/S摩尔浓度比1∶5配制50ml溶液，取In离子的摩尔浓度为60mmol/L，通过压电陶瓷晶片雾化器将配制的溶液雾化，雾化速率为100ml/h，高纯氮气流量控5L/min，生长In2S3薄膜30min，生长温度控制在310℃，生长完成后继续通氮气作为保护气，在380℃下原位退火30min。后续RTP热处理分别在450℃，550℃温度下进行，保温时间2min，然后随炉冷却。整个RTP热处理过程使用Ar气作为保护气氛；第三，以MoS2粉末为原料，以氩气为携载气体，在500℃温度范围内利用热蒸发法在β—In2S3薄膜表面制备MoS2薄膜，沉积时间30min；第四，利用化学浴沉积在缓冲层MoS2上沉积P型硫化亚锡(SnS)薄膜，将氯化亚锡(SnCl2·2H2O)溶解于适量的丙酮当中，然后加入体积比为60%的三乙醇胺溶液并搅拌使之均匀混合，待溶液中出现了白色絮状物时，给溶液中加入一定浓度的硫代乙酰胺溶液，并搅拌均匀。接着通过加入适量的氨水和氯化铵缓冲溶液来调节反应溶液的pH值。最后，用去离子水把溶液体积调节到250ml。将盛有反应溶液的烧杯置于85-2型恒温磁力搅拌器上，在室温下搅拌均匀，然后把沉积有二硫化钼薄膜的样品垂直插入反应溶液中进行SnS薄膜沉积，然后将SnS薄膜样品在250℃退火1.5h。最后，利用丝网印刷法在硫化亚锡薄膜上沉积金属银(Ag)电极。
实施例三：
首先，利用直流电化学沉积法在有机柔性塑料基底上沉积镍金属纳米线。电解液由硫酸镍(NiSO4·6H2O)（100g/L），氯化镍(NiCl2·6H2O)（20g/L）和H3BO3（45g/L）的水溶液组成，再加入1M的H2SO4溶液调节PH值为PH=2.5。电沉积条件为：外加直流电压0.2V，沉积温度为25℃（室温），沉积时间为240分钟；第二，采用磁控溅射预制In薄膜和硫化热处理工艺在镍金属纳米线上沉积β—In2S3薄膜。溅射功率为120W，硫化热处理温度为450℃，溅射气体压强在0.5Pa，溅射时间是6min；第三，在真空环境中，以钼金属颗粒和硫粉末为原料，利用双源蒸发法在N型β—In2S3薄膜上沉积MoS2薄膜，通过调节钼金属蒸发的电子束流大小、硫粉末蒸发的温度以及生长时间使原子和原子的含量之比为1:2，Mo原子和S原子在加热的β—In2S3薄膜上反应生成MoS2分子，获得层数可控的MoS2薄膜；第四，利用化学浴沉积在缓冲层MoS2上沉积P型硫化亚锡(SnS)薄膜，将氯化亚锡(SnCl2·2H2O)溶解于适量的丙酮当中，然后加入体积比为60%的三乙醇胺溶液并搅拌使之均匀混合，待溶液中出现了白色絮状物时，给溶液中加入一定浓度的硫代乙酰胺溶液，并搅拌均匀。接着通过加入适量的氨水和氯化铵缓冲溶液来调节反应溶液的pH值。最后，用去离子水把溶液体积调节到250ml。将盛有反应溶液的烧杯置于85-2型恒温磁力搅拌器上，在室温下搅拌均匀，然后把沉积有二硫化钼薄膜的样品垂直插入反应溶液中进行SnS薄膜沉积，然后将SnS薄膜样品在300℃退火0.5h。最后，利用丝网印刷法在硫化亚锡薄膜上沉积金属银(Ag)电极。
实施例四：
首先，利用直流电化学沉积法在硅片基底上沉积钴金属纳米线。电解液由硫酸钴(CoSO4·7H2O)（100g/L）和H3BO3（45g/L）的水溶液组成，再加入1M的H2SO4溶液调节PH值为PH=2.5。电沉积条件为：外加直流电压1.6V，沉积温度为25℃（室温），沉积时间为120分钟；第二，利用超声喷雾法在硅片基底上沉积N型β—In2S3薄膜，采用氯化铟(InCl3·4H2O)和硫脲作为In源和S源，按In/S摩尔浓度比1∶5配制50ml溶液，取In离子的摩尔浓度为60mmol/L，通过压电陶瓷晶片雾化器将配制的溶液雾化，雾化速率为100ml/h，高纯氮气流量控5L/min，生长In2S3薄膜30min，生长温度控制在310℃，生长完成后继续通氮气作为保护气，在380℃下原位退火45min。后续RTP热处理分别在450℃，550℃温度下进行，保温时间2.5min，然后随炉冷却。整个RTP热处理过程使用Ar气作为保护气氛；第三，以MoS2粉末为原料，以氩气为携载气体，在500℃温度范围内利用热蒸发法在β—In2S3薄膜表面沉积MoS2薄膜，沉积时间45min；第四，利用化学浴沉积在缓冲层MoS2上沉积P型硫化亚锡(SnS)薄膜，将氯化亚锡(SnCl2·2H2O)溶解于适量的丙酮当中，然后加入体积比为60%的三乙醇胺溶液并搅拌使之均匀混合，待溶液中出现了白色絮状物时，给溶液中加入一定浓度的硫代乙酰胺溶液，并搅拌均匀。接着通过加入适量的氨水和氯化铵缓冲溶液来调节反应溶液的pH值。最后，用去离子水把溶液体积调节到250ml。将盛有反应溶液的烧杯置于85-2型恒温磁力搅拌器上，在室温下搅拌均匀，然后把沉积有二硫化钼薄膜的样品垂直插入反应溶液中进行SnS薄膜沉积，然后将SnS薄膜样品在250℃退火2h。最后，利用丝网印刷法在硫化亚锡薄膜上沉积金属铝(Al)电极。
Claims (5)
1.一种硫化亚锡和硫化铟薄膜太阳能电池，其特征在于，所述太阳能电池的结构从下至上依次为基底、金属纳米线、N型β—硫化铟窗口层、二硫化钼缓冲层、P型硫化亚锡吸收层、金属电极。
2.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述基底为玻璃或硅片或有机柔性塑料。
3.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述金属纳米线为银或铜或镍或钴纳米线。
4.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述金属电极为银或铝电极。
5.一种如权利要求1所述的薄膜太阳能电池的制备方法，其特征在于，取一块干净的基底，利用直流电化学沉积法在基底上沉积金属纳米线，然后利用真空蒸发法或超声喷雾法或磁控溅射法或化学浴法在金属纳米线上沉积N型β—硫化铟，在N型β—硫化铟上利用双源蒸发法或脉冲电沉积法或化学气相沉积法沉积二硫化钼薄膜，在二硫化钼薄膜上利用超声喷雾法或真空蒸发法或化学浴沉积法沉积P型硫化亚锡薄膜，最后在硫化亚锡薄膜上丝网印刷金属电极。
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