CN103695873B - 一种单分子层/多分子层二硫化钼薄膜的制备方法 - Google Patents
一种单分子层/多分子层二硫化钼薄膜的制备方法 Download PDFInfo
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CN110172736B (zh) * | 2019-06-06 | 2020-08-18 | 华中科技大学 | 一种大尺寸三层硫化钼单晶的化学气相沉积制备方法 |
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CN101127308A (zh) * | 2007-09-14 | 2008-02-20 | 中国科学院上海硅酸盐研究所 | 一种室温条件下沉积非晶硫化锌薄膜的方法 |
CN101712492A (zh) * | 2009-12-11 | 2010-05-26 | 中南大学 | 一种单分散二硫化钼纳米片的制备方法 |
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CN101127308A (zh) * | 2007-09-14 | 2008-02-20 | 中国科学院上海硅酸盐研究所 | 一种室温条件下沉积非晶硫化锌薄膜的方法 |
CN101712492A (zh) * | 2009-12-11 | 2010-05-26 | 中南大学 | 一种单分散二硫化钼纳米片的制备方法 |
Non-Patent Citations (2)
Title |
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50cm2) MoS2 thin films deposited using successive ionic layer adsorption and reaction (SILAR) method.《Materials Chemistry and Physics》.2001,第71卷(第1期),第95页左栏2实验过程. * |
S.D. Sartale et. al..Studies on large area (∼ * |
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Effective date of registration: 20160920 Address after: West high tech Zone Fucheng Road in Chengdu city of Sichuan province 610095 399 No. 7 Building 3 unit 8 floor No. 807 Patentee after: Chengdu Weile Youchuang Technology Co.,Ltd. Address before: 707 Shandong high tech Zone, Ji'nan Province, No. 250013 show Road, room No. 1237 Patentee before: Xiang Yong |
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Effective date of registration: 20170116 Address after: 707 Shandong high tech Zone, Ji'nan Province, No. 250013 show Road, room No. 1237 Patentee after: Xiang Yong Address before: West high tech Zone Fucheng Road in Chengdu city of Sichuan province 610095 399 No. 7 Building 3 unit 8 floor No. 807 Patentee before: Chengdu Weile Youchuang Technology Co.,Ltd. |
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