CN101057396B - 在较宽频率范围上具有平坦增益响应的可调谐共射共基lna - Google Patents

在较宽频率范围上具有平坦增益响应的可调谐共射共基lna Download PDF

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CN101057396B
CN101057396B CN200580038258XA CN200580038258A CN101057396B CN 101057396 B CN101057396 B CN 101057396B CN 200580038258X A CN200580038258X A CN 200580038258XA CN 200580038258 A CN200580038258 A CN 200580038258A CN 101057396 B CN101057396 B CN 101057396B
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大卫·迪佩雷
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
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Abstract

提出了一种具有经调谐的电感负载的共射共基LNA电路。所述电路显示出较宽频率范围上的平坦响应。

Description

在较宽频率范围上具有平坦增益响应的可调谐共射共基LNA
技术领域
本发明涉及低噪声放大器(Low Noise Amplifier)，具体地，涉及一种在较宽频率范围上具有平坦增益响应的可调谐共射共基LNA。 
背景技术
目前，许多无线系统在接收机链中使用共射共基LNA(低噪声放大器)。与单晶体管级相比，这种结构的优势众所周知：良好的反向隔离，使得输入阻抗匹配网络几乎与LNA负载无关，并且显著地减小了来自L0(本地振荡器)的任何泄漏。越来越多的无线系统工作在宽频范围上：对于802.11a，工作频率是从4.9GHz至6.0GHz，对于UWB，工作频带覆盖几个GHz。作为接收机链的第一级(如果有天线和前端滤波器，则在它们之后)的LNA需要在操作频率上提供足够高的增益和较低的噪声系数。 
以下参考文献示出了现有技术的发展状态： 
“A 3 to 10GHz LNA using wideband LC-ladder MatchingNetwork”，A.Ismail，A.Abidi，ISSCC 2004 conference。 
“An ultra-wideband CMOS LNA for 3.1 to 10.6GHz WirelessReceivers”，Andrea Bevilacqua，Ali M Niknejad，ISSCC 2004 conference。 
“A single-chip dual-band tri-mode CMOS transceivers for IEEE802.11a/b/g WLAN”，Masoud Zargari and al，ISSCC 2004 conference。 
“A 2.5dB NF direct-conversion receiver front-end forHiperLAN2/IEEE802.11a”，Paola Rossi，Antonio Liscidini，MassimoBrandolini，Francesco Svelto，ISSCC 2004 conference。 
近来，已在多篇文章[1]、[2]、[3]中出现共射共基LNA电路。参考图1，用于802.11a和UWB(或任意其他无线系统)的典型双极性共射 共基LNA具有以下结构：输入匹配网络(N1)、跨导级(T1)、电感发射极负反馈(degeneration)(L1)、公共基极(T2)、电感负载(L2)，可选组件是C2和R2。为简化起见，在图1中没有详细示出晶体管T1和T2的偏置电路。 
相应的结构也可以用CMOS技术实现。 
参考图2，图1中带电感负载的共射共基结构的主要缺点是其在工作频带Fstoop-Fstart上的增益变化。典型地，Fstop-Fstart>1GHz。 
使共射共基LNA增益在较宽频率范围上平坦的一种方法是通过使用如[1]和[2]中所述的高级输入匹配网络。然而，大宽带LNA具有主要缺点是：不仅对频率Fwanted(Fstart和Fstop之间)上的接收到的所需信号进行放大，还对不同于Fwanted的频率(即使Fintereferer远离Fwanted)上的任意其他干扰进行放大。放大干扰是不可接受的，这是因为放大干扰需要接收机链中额外的动态范围和额外的滤波，这转化为电流消耗和成本的增加(在天线前端处添加额外的无源滤波器的情况下)。 
为了解决大宽带LNA的这种问题(即使对带外干扰也进行放大)，一种方法是对窄带LNA进行频率调谐。参考图3，通过用可变电容器对电感负载进行调谐，这是易于实现的。通过对窄带LNA进行频率调谐，可以覆盖较宽范围的工作频率。[4]中实施并出版了这种构思。然而，在该文章中提出的电路具有几个缺点：LNA不是共射共基的而是具有较差的LO泄漏的共基极；频率响应不平坦：所引文章[4]示出了约1dB的增益变化。 
图4示出了带可调谐电感负载的共射共基LNA的理想所需响应。然而，由于前述的增益变化，实际电路不具有如图4所示的理想响应。相反，调谐频率Ftune1、2、3、...上的增益值不相同。从跨导级T1的输入到LNA输出(参见图1)的频率响应可能与如图4所示的非常接近。尽管如此，参考图5，输入匹配网络(图1)的频率响应在较宽的频带上不平坦。因此，如图3所示的总体LNA响应实际上成输入匹配网络频率响应的形状(参见图6)。 
从图6可见，带电感负载调谐的共射共基LNA电路不具有无线系统所需的工作频率范围Fstop-Fstart上的平坦响应(参见图4)。
发明内容
一般而言，本发明提供了一种具有经调谐的电感负载的共射共基LNA电路。所述电路显示出宽频率范围上的平坦响应。 
根据本发明一方面，一种使用窄带放大器在宽频率范围上以恒定的增益对接收到的输入信号进行放大的方法，其中，窄带放大器包括：晶体管，与电源、负载、输入信号和输出信号相耦合；匹配网络，与晶体管相耦合，用于使输出信号表现出对频率依赖的增益；跨导线性化元件，与晶体管相耦合；所述方法包括：使用与晶体管的传导通路并联的第一变抗器，对窄带放大器进行调谐，使其工作在与所需信号相对应的选定频率范围之内；以及使用与跨导线性化元件相耦合的第二变抗器，改变窄带放大器的增益，以根据选定频率范围，对窄带放大器的非线性增益响应进行补偿。 
根据本发明另一方面，一种放大器电路，包括：晶体管，与电源、负载、输入信号和输出信号相耦合；匹配网络，与晶体管相耦合，用于使输出信号表现出对频率依赖的增益；跨导线性化元件，与晶体管相耦合；第一变抗器，与晶体管的传导通路并联，用于对所述放大器电路进行调谐；以及第二变抗器，与跨导线性化元件相耦合，用于改变所述放大器电路的增益。 
附图说明
图1是典型共射共基LNA的简化电路图。 
图2是示出了具有电感负载的共射共基LNA在较宽工作频率上的典型频率响应的图。 
图3是具有可调谐电感负载的共射共基LNA的简化电路图。 
图4是示出了经调谐的LNA的理想频率响应的图。 
图5是示出了典型的输入匹配网络及其频率响应的图。 
图6是具有经调谐的电感负载的共射共基LNA及其频率响应的图，其频率响应受到其匹配网络频率响应的整形。 
图7是具有根据本发明一个实施例的具有经调谐电感负载和经调谐电感发射极负反馈的共射共基LNA的简化电路图。 
图8是具有输入匹配网路和经调谐电感发射极负反馈的跨导级以及其对不同调谐值的频率响应的图。 
图9是当电感负载和电感负反馈都经调谐时图7所示共射共基LNA的频率响应图。 
图10是具有根据本发明另一实施例的具有经调谐电感负载和经调谐电感发射极负反馈的CMOS共射共基LNA的简化电路图。 
具体实施方式
现在参考图7，示出了具有经调谐电感负载的共射共基LNA的简化电路，电感负载包括经调谐的发射极负反馈电感器L1。该电感器L1用于使电路的跨导线性化。电阻器R2在该电路中是可选的。 
通过用电容器C1对负反馈电感器L1进行调谐，易于对如图8所示的输入匹配网络进行频率补偿。现在，通过使用发射极负反馈电感调谐，LNA增益是可调谐的。 
参考图9，可以看出通过C1和C2(分别是发射极负反馈电感调谐电容器和负载电感器调谐电容器)值的适当组合，可以使LNA增益在工作频带Fstop-Fstart上基本上平坦(在示例实施例中，从4.9GHz至6GHz变化小于1dB)。可以使用包括查找表的控制电路来控制C1和C2的值，例如，给出针对不同所需频率的C1和C2的值。 
参考图10，示出了具有经调谐电感负载的CMOS共射共基LNA的简化电路图，电感负载包括经调谐的发射极负反馈电感器。 
本领域普通技术人员应当理解，在不背离本发明的精神及其实质特征的情况下，本发明可以按照其他特定形式来具体实现。因此，在所有方面，公开的实施例旨在进行说明，而不是限制。本发明的范围由所附权利要求而不是由前述描述表示，并涵盖落入本发明等同物的意思和范围之内的所有改变。 

Claims (4)

1.一种使用窄带放大器在宽频率范围上以恒定的增益对接收到的输入信号进行放大的方法，其中，窄带放大器包括：晶体管，与电源、负载、输入信号和输出信号相耦合；匹配网络，与晶体管相耦合，用于使输出信号表现出对频率依赖的增益；跨导线性化元件，与晶体管相耦合；
所述方法包括：使用与晶体管的传导通路并联的第一变抗器，对窄带放大器进行调谐，使其工作在与所需信号相对应的选定频率范围之内；以及使用与跨导线性化元件相耦合的第二变抗器，改变窄带放大器的增益，以根据选定频率范围，对窄带放大器的非线性增益响应进行补偿。
2.根据权利要求1所述的方法，还包括：以协调方式来调节第一变抗器和第二变抗器，以抵消所述对频率依赖的增益。
3.一种放大器电路，包括：晶体管，与电源、负载、输入信号和输出信号相耦合；匹配网络，与晶体管相耦合，用于使输出信号表现出对频率依赖的增益；跨导线性化元件，与晶体管相耦合；第一变抗器，与晶体管的传导通路并联，用于对所述放大器电路进行调谐；以及第二变抗器，与跨导线性化元件相耦合，用于改变所述放大器电路的增益。
4.根据权利要求3所述的放大器电路，还包括：控制电路，用于以协调方式来调节第一变抗器和第二变抗器，以抵消所述对频率依赖的增益。
CN200580038258XA 2004-09-10 2005-09-08 在较宽频率范围上具有平坦增益响应的可调谐共射共基lna Active CN101057396B (zh)

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US64880005P 2005-01-31 2005-01-31
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PCT/IB2005/052945 WO2006027755A1 (en) 2004-09-10 2005-09-08 Tunable cascode lna with flat gain response over a wide frequency range

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US7786806B2 (en) 2010-08-31
KR20070052782A (ko) 2007-05-22
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JP2008512926A (ja) 2008-04-24
US20080012643A1 (en) 2008-01-17
WO2006027755A1 (en) 2006-03-16

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