JP2008512926A - 広い周波数帯域にわたって平坦な利得応答で調節可能なカスコードlna - Google Patents
広い周波数帯域にわたって平坦な利得応答で調節可能なカスコードlna Download PDFInfo
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- JP2008512926A JP2008512926A JP2007530834A JP2007530834A JP2008512926A JP 2008512926 A JP2008512926 A JP 2008512926A JP 2007530834 A JP2007530834 A JP 2007530834A JP 2007530834 A JP2007530834 A JP 2007530834A JP 2008512926 A JP2008512926 A JP 2008512926A
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- 230000004044 response Effects 0.000 title claims abstract description 20
- 230000001419 dependent effect Effects 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 abstract description 20
- 230000001105 regulatory effect Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
[1]「A 3 to 10 GHz LNA using wideband LC-Ladder Matching Network、A.Ismail」、A.Abidi、ISSCC 2004 conference
[2]「An ultra-wideband CMOS LNA for 3.1 to 10.6GHz Wireless Receivers」、Andrea Bevilacqua、Ali M Niknejad、ISSCC 2004 conference
[3]「A single-chip dual-band tri-mode CMOS transceivers for IEEE 802.11a/b/g WLAN」、Masoud Zargari and al、ISSCC 2004 conference
[4]「A 2.5dB NF direct-conversion receiver front-end for HiperLAN2/IEEE 802.11a/b/g」、Paola Rossi、Antonio Liscidini、Massimo Brandolini、Francesco Svelto、ISSCC 2004 conference
Claims (6)
- 狭帯域増幅器を用いて受信された入力信号を広い周波数帯域にわたってほぼ一定の利得で増幅する方法であって、
対象信号に対応する選択された周波数帯域内で動作するように前記狭帯域増幅器を調節し、
前記選択された周波数帯域に従って前記狭帯域増幅器の非線形利得応答を補正することを含む方法。 - 前記調節は、第1バラクタ素子を変化させることを含み、
前記補正は、第2バラクタ素子を変化させることを含む請求項1に記載の方法。 - 狭帯域増幅器を用いて受信された入力信号を広い周波数帯域にわたってほぼ一定の利得で増幅させる増幅装置であって、
対象信号に対応する選択された周波数帯域内で動作するように前記狭帯域増幅器を調節する手段と、
前記選択された周波数帯域に従って前記狭帯域増幅器の非線形利得応答を補正する手段と、を含む装置。 - 前記調節する手段は、第1バラクタ素子を含み、
前記補正する手段は、第2バラクタ素子を含む請求項3に記載の装置。 - 増幅回路であって、
電源と接続されたトランジスタ、負荷、入力信号及び出力信号と、
前記トランジスタと接続され、前記出力信号に周波数依存利得を示させる整合ネットワークと、
前記トランジスタと接続された素子を線形化する相互コンダクタンスと、
前記増幅回路を調節し、前記トランジスタの導電パスと並列に接続された第1バラクタと、
素子を線形化する前記相互コンダクタンスと接続された前記増幅回路の利得を変化させる第2バラクタと、を含む増幅回路。 - 前記周波数依存利得を是正するように調整された方法で前記第1バラクタ及び前記第2バラクタを調節する制御回路をさらに含む請求項5に記載の増幅回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60880704P | 2004-09-10 | 2004-09-10 | |
US64880005P | 2005-01-31 | 2005-01-31 | |
PCT/IB2005/052945 WO2006027755A1 (en) | 2004-09-10 | 2005-09-08 | Tunable cascode lna with flat gain response over a wide frequency range |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008512926A true JP2008512926A (ja) | 2008-04-24 |
Family
ID=35229706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007530834A Pending JP2008512926A (ja) | 2004-09-10 | 2005-09-08 | 広い周波数帯域にわたって平坦な利得応答で調節可能なカスコードlna |
Country Status (6)
Country | Link |
---|---|
US (1) | US7786806B2 (ja) |
EP (1) | EP1792395A1 (ja) |
JP (1) | JP2008512926A (ja) |
KR (1) | KR20070052782A (ja) |
CN (1) | CN101057396B (ja) |
WO (1) | WO2006027755A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011097160A (ja) * | 2009-10-27 | 2011-05-12 | Sony Corp | 高周波増幅器および無線通信装置 |
JP2013503573A (ja) * | 2009-08-26 | 2013-01-31 | クゥアルコム・インコーポレイテッド | 共通のバイアス電流をシェアする複数の増幅ステージを用いて信号を増幅するシステム及び方法 |
WO2015019523A1 (ja) * | 2013-08-08 | 2015-02-12 | パナソニック株式会社 | 並列共振回路 |
US9948255B2 (en) | 2016-07-28 | 2018-04-17 | Murata Manufacturing Co., Ltd. | Amplification circuit |
JP2019516308A (ja) * | 2016-05-02 | 2019-06-13 | テレフオンアクチーボラゲット エルエム エリクソン(パブル) | 増幅器 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1832335B (zh) * | 2006-04-13 | 2010-05-12 | 复旦大学 | 一种cmos超宽带低噪声放大器 |
JP5093240B2 (ja) * | 2007-08-20 | 2012-12-12 | パナソニック株式会社 | アンテナ装置 |
US7760019B2 (en) * | 2008-03-04 | 2010-07-20 | Micron Technology, Inc. | Adaptive operational transconductance amplifier load compensation |
US8314653B1 (en) * | 2009-02-18 | 2012-11-20 | Rf Micro Devices, Inc. | Using degeneration in an active tunable low-noise radio frequency bandpass filter |
US8217723B2 (en) * | 2009-11-05 | 2012-07-10 | Texas Instruments Incorporated | Low noise amplifier circuit |
US8238867B1 (en) * | 2011-02-28 | 2012-08-07 | Silicon Laboratories Inc | Low noise amplifier (LNA) suitable for use in different transmission environments and receiver using such an LNA |
EP2506443B1 (en) | 2011-03-31 | 2016-11-30 | Nxp B.V. | Receiver comprising amplifier with Miller effect feedback |
US8626106B2 (en) * | 2011-12-06 | 2014-01-07 | Tensorcom, Inc. | Method and apparatus of an input resistance of a passive mixer to broaden the input matching bandwidth of a common source/gate LNA |
CN103684280B (zh) * | 2013-12-12 | 2016-08-17 | 复旦大学 | 0-10m宽频带放大器 |
US9692368B2 (en) * | 2014-09-09 | 2017-06-27 | Qualcomm Incorporated | Dual-band low noise amplifier |
US9985592B2 (en) * | 2015-05-13 | 2018-05-29 | Skyworks Solutions, Inc. | High gain RF power amplifier with negative capacitor |
US9667211B1 (en) * | 2015-09-28 | 2017-05-30 | Rockwell Collins, Inc. | Variable gain and slope active topology |
US10164669B2 (en) * | 2015-10-16 | 2018-12-25 | Skyworks Solutions, Inc. | Hybrid amplifier and signal combiner |
US11201595B2 (en) | 2015-11-24 | 2021-12-14 | Skyworks Solutions, Inc. | Cascode power amplifier with switchable output matching network |
US10230332B2 (en) | 2016-08-18 | 2019-03-12 | Skyworks Solutions, Inc. | Apparatus and methods for biasing low noise amplifiers |
US10171045B2 (en) | 2016-08-18 | 2019-01-01 | Skyworks Solutions, Inc. | Apparatus and methods for low noise amplifiers with mid-node impedance networks |
KR20180070328A (ko) | 2016-12-16 | 2018-06-26 | 삼성전자주식회사 | 반송파 집성을 위한 저잡음 증폭기 및 이를 포함하는 장치 |
CN106849894B (zh) * | 2017-01-23 | 2018-10-02 | 东南大学 | 一种基于共栅cascode低噪声放大器的增益调节结构 |
US11245372B2 (en) | 2019-08-30 | 2022-02-08 | Skyworks Solutions, Inc. | Variable-gain amplifier with degeneration circuit |
US11942912B2 (en) * | 2019-09-18 | 2024-03-26 | Skyworks Solutions, Inc. | Amplifier with tunable impedance circuit |
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2005
- 2005-09-08 CN CN200580038258XA patent/CN101057396B/zh active Active
- 2005-09-08 EP EP05777569A patent/EP1792395A1/en not_active Ceased
- 2005-09-08 WO PCT/IB2005/052945 patent/WO2006027755A1/en active Application Filing
- 2005-09-08 JP JP2007530834A patent/JP2008512926A/ja active Pending
- 2005-09-08 KR KR1020077005473A patent/KR20070052782A/ko not_active Application Discontinuation
- 2005-09-08 US US11/575,065 patent/US7786806B2/en active Active
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JPS63232509A (ja) * | 1987-03-20 | 1988-09-28 | Hitachi Ltd | 同調増幅器 |
JPH08316759A (ja) * | 1995-05-16 | 1996-11-29 | Saitama Nippon Denki Kk | 広帯域増幅器 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013503573A (ja) * | 2009-08-26 | 2013-01-31 | クゥアルコム・インコーポレイテッド | 共通のバイアス電流をシェアする複数の増幅ステージを用いて信号を増幅するシステム及び方法 |
JP2011097160A (ja) * | 2009-10-27 | 2011-05-12 | Sony Corp | 高周波増幅器および無線通信装置 |
WO2015019523A1 (ja) * | 2013-08-08 | 2015-02-12 | パナソニック株式会社 | 並列共振回路 |
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JP2019516308A (ja) * | 2016-05-02 | 2019-06-13 | テレフオンアクチーボラゲット エルエム エリクソン(パブル) | 増幅器 |
JP7002468B2 (ja) | 2016-05-02 | 2022-01-20 | テレフオンアクチーボラゲット エルエム エリクソン(パブル) | 増幅器 |
US11290064B2 (en) | 2016-05-02 | 2022-03-29 | Telefonaktiebolaget Lm Ericsson (Publ) | Amplifier |
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Also Published As
Publication number | Publication date |
---|---|
CN101057396A (zh) | 2007-10-17 |
US7786806B2 (en) | 2010-08-31 |
CN101057396B (zh) | 2012-07-18 |
EP1792395A1 (en) | 2007-06-06 |
KR20070052782A (ko) | 2007-05-22 |
WO2006027755A1 (en) | 2006-03-16 |
US20080012643A1 (en) | 2008-01-17 |
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