CN101055913A - 发光器件及其制造方法 - Google Patents
发光器件及其制造方法 Download PDFInfo
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- CN101055913A CN101055913A CN 200710098127 CN200710098127A CN101055913A CN 101055913 A CN101055913 A CN 101055913A CN 200710098127 CN200710098127 CN 200710098127 CN 200710098127 A CN200710098127 A CN 200710098127A CN 101055913 A CN101055913 A CN 101055913A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
晶体结构 | 晶格常数() | 关于GaN的晶格失配(%) | 关于GaN的热失配(%) | 热膨胀系数(×10-6/K) | |
GaN | 纤锌矿型 | a=3.1876c=5.1846 | 5.59 | ||
Mo | BCC | a=3.1468 | 1.3% | 14.1% | 4.9 |
Ni | FCC | a=3.5167 | 9% | 58% | 13.3 |
W | BCC | a=3.158 | 0.9% | 21.5% | 4.6 |
Si | 金刚石立方 | a=3.8403 | 17% | 55% | 3.6(2.8~7.3) |
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0033828 | 2006-04-14 | ||
KR1020060033828 | 2006-04-14 | ||
KR20060033828A KR20070102114A (ko) | 2006-04-14 | 2006-04-14 | 질화물 반도체 발광소자 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101055913A true CN101055913A (zh) | 2007-10-17 |
CN101055913B CN101055913B (zh) | 2010-06-16 |
Family
ID=38604008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200710098127 Active CN101055913B (zh) | 2006-04-14 | 2007-04-13 | 发光器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9048346B2 (zh) |
KR (1) | KR20070102114A (zh) |
CN (1) | CN101055913B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101826582A (zh) * | 2009-03-02 | 2010-09-08 | Lg伊诺特有限公司 | 半导体发光器件 |
CN106252373A (zh) * | 2016-09-09 | 2016-12-21 | 复旦大学 | 一种GaN基集成器件及其制备方法 |
CN114335274A (zh) * | 2022-03-10 | 2022-04-12 | 江西兆驰半导体有限公司 | 一种发光二极管的外延结构及其制备方法 |
CN114388673A (zh) * | 2021-12-08 | 2022-04-22 | 华灿光电(浙江)有限公司 | 微型发光二极管芯片及其制备方法 |
CN116314507A (zh) * | 2023-05-19 | 2023-06-23 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
CN116364825A (zh) * | 2023-06-01 | 2023-06-30 | 江西兆驰半导体有限公司 | 复合缓冲层及其制备方法、外延片及发光二极管 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101305786B1 (ko) * | 2007-06-21 | 2013-09-06 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
WO2009129353A1 (en) * | 2008-04-15 | 2009-10-22 | Purdue Research Foundation | Metallized silicon substrate for indium gallium nitride light-emitting diode |
US8154038B2 (en) * | 2008-07-01 | 2012-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Group-III nitride for reducing stress caused by metal nitride reflector |
KR101028251B1 (ko) | 2010-01-19 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP5002703B2 (ja) * | 2010-12-08 | 2012-08-15 | 株式会社東芝 | 半導体発光素子 |
FR2988219B1 (fr) * | 2012-03-16 | 2015-03-13 | Soitec Silicon On Insulator | Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes |
US8916483B2 (en) * | 2012-03-09 | 2014-12-23 | Soitec | Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum |
WO2013132332A1 (en) * | 2012-03-09 | 2013-09-12 | Soitec | Methods for forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods |
US20160380045A1 (en) * | 2015-06-25 | 2016-12-29 | Tivra Corporation | Crystalline semiconductor growth on amorphous and poly-crystalline substrates |
WO2021198805A1 (en) * | 2020-03-31 | 2021-10-07 | King Abdullah University Of Science And Technology | Epitaxial processing of single-crystalline films on amorphous substrates |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335217B1 (en) * | 1997-10-10 | 2002-01-01 | Toyoda Gosei Co., Ltd. | GaN type semiconductor device fabrication |
US6936859B1 (en) * | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
EP1039555A1 (en) * | 1999-03-05 | 2000-09-27 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
JP3567790B2 (ja) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
JP3963068B2 (ja) * | 2000-07-19 | 2007-08-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子の製造方法 |
JP4416297B2 (ja) * | 2000-09-08 | 2010-02-17 | シャープ株式会社 | 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置 |
US7148520B2 (en) * | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
CN1306625C (zh) * | 2003-07-16 | 2007-03-21 | 璨圆光电股份有限公司 | 发光二极管结构及其制造方法 |
KR20050041536A (ko) | 2003-10-31 | 2005-05-04 | 엘지이노텍 주식회사 | 발광소자 |
KR100541102B1 (ko) * | 2004-02-13 | 2006-01-11 | 삼성전기주식회사 | 오믹 접촉을 개선한 질화물 반도체 발광소자 및 그 제조방법 |
EP1730795A2 (en) * | 2004-03-31 | 2006-12-13 | Matsushita Electric Industrial Co., Ltd. | Organic photoelectric conversion element utilizing an inorganic buffer layer placed between an electrode and the active material |
US20070045607A1 (en) * | 2005-08-26 | 2007-03-01 | Nai-Chuan Chen | Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof |
-
2006
- 2006-04-14 KR KR20060033828A patent/KR20070102114A/ko active Search and Examination
-
2007
- 2007-04-13 US US11/734,872 patent/US9048346B2/en active Active
- 2007-04-13 CN CN 200710098127 patent/CN101055913B/zh active Active
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101826582A (zh) * | 2009-03-02 | 2010-09-08 | Lg伊诺特有限公司 | 半导体发光器件 |
CN101826582B (zh) * | 2009-03-02 | 2013-10-02 | Lg伊诺特有限公司 | 半导体发光器件 |
CN106252373A (zh) * | 2016-09-09 | 2016-12-21 | 复旦大学 | 一种GaN基集成器件及其制备方法 |
CN106252373B (zh) * | 2016-09-09 | 2019-12-03 | 复旦大学 | 一种GaN基集成器件及其制备方法 |
CN114388673A (zh) * | 2021-12-08 | 2022-04-22 | 华灿光电(浙江)有限公司 | 微型发光二极管芯片及其制备方法 |
CN114388673B (zh) * | 2021-12-08 | 2023-11-14 | 华灿光电(浙江)有限公司 | 微型发光二极管芯片及其制备方法 |
CN114335274A (zh) * | 2022-03-10 | 2022-04-12 | 江西兆驰半导体有限公司 | 一种发光二极管的外延结构及其制备方法 |
CN114335274B (zh) * | 2022-03-10 | 2022-06-17 | 江西兆驰半导体有限公司 | 一种发光二极管的外延结构及其制备方法 |
CN116314507A (zh) * | 2023-05-19 | 2023-06-23 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
CN116364825A (zh) * | 2023-06-01 | 2023-06-30 | 江西兆驰半导体有限公司 | 复合缓冲层及其制备方法、外延片及发光二极管 |
Also Published As
Publication number | Publication date |
---|---|
CN101055913B (zh) | 2010-06-16 |
US9048346B2 (en) | 2015-06-02 |
KR20070102114A (ko) | 2007-10-18 |
US20070241350A1 (en) | 2007-10-18 |
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Effective date of registration: 20210811 Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Leyu Semiconductor Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG INNOTEK Co.,Ltd. |
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Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Liyu Semiconductor Co.,Ltd. Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee before: Suzhou Leyu Semiconductor Co.,Ltd. |
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Denomination of invention: Light emitting device and its manufacturing method Effective date of registration: 20230630 Granted publication date: 20100616 Pledgee: Agricultural Bank of China, Limited by Share Ltd, Taicang branch Pledgor: Suzhou Liyu Semiconductor Co.,Ltd. Registration number: Y2023980047118 |