CN101040021B - 用于抛光贵金属的具有聚合物添加剂的化学机械抛光组合物 - Google Patents

用于抛光贵金属的具有聚合物添加剂的化学机械抛光组合物 Download PDF

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Publication number
CN101040021B
CN101040021B CN2005800348540A CN200580034854A CN101040021B CN 101040021 B CN101040021 B CN 101040021B CN 2005800348540 A CN2005800348540 A CN 2005800348540A CN 200580034854 A CN200580034854 A CN 200580034854A CN 101040021 B CN101040021 B CN 101040021B
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China
Prior art keywords
polishing
substrate
liquid carrier
chemical mechanical
mechanical polishing
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Expired - Fee Related
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CN2005800348540A
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English (en)
Chinese (zh)
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CN101040021A (zh
Inventor
弗朗西斯科·德雷吉西索罗
本杰明·拜尔
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Cabot Corp
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Cabot Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2005800348540A 2004-10-12 2005-10-11 用于抛光贵金属的具有聚合物添加剂的化学机械抛光组合物 Expired - Fee Related CN101040021B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/963,108 US7563383B2 (en) 2004-10-12 2004-10-12 CMP composition with a polymer additive for polishing noble metals
US10/963,108 2004-10-12
PCT/US2005/036577 WO2006044417A2 (en) 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals

Publications (2)

Publication Number Publication Date
CN101040021A CN101040021A (zh) 2007-09-19
CN101040021B true CN101040021B (zh) 2012-06-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800348540A Expired - Fee Related CN101040021B (zh) 2004-10-12 2005-10-11 用于抛光贵金属的具有聚合物添加剂的化学机械抛光组合物

Country Status (9)

Country Link
US (1) US7563383B2 (https=)
EP (1) EP1799785A2 (https=)
JP (1) JP5583888B2 (https=)
KR (1) KR101128551B1 (https=)
CN (1) CN101040021B (https=)
IL (1) IL182170A (https=)
MY (1) MY144187A (https=)
TW (1) TWI308924B (https=)
WO (1) WO2006044417A2 (https=)

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JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
CN104073169B (zh) * 2014-06-10 2015-07-22 大庆佳昌晶能信息材料有限公司 一种用于化合物半导体的化学机械抛光剂
WO2021242755A1 (en) * 2020-05-29 2021-12-02 Versum Materials Us, Llc Low dishing oxide cmp polishing compositions for shallow trench isolation applications and methods of making thereof
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
CN116875194A (zh) * 2023-05-18 2023-10-13 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用

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CN1468446A (zh) * 2000-08-30 2004-01-14 �����ɷ� 抛光包括铜和钨的半导体器件结构中使用的浆液与固定磨料型抛光垫以及抛光方法
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Also Published As

Publication number Publication date
IL182170A (en) 2011-12-29
US7563383B2 (en) 2009-07-21
WO2006044417A3 (en) 2006-08-10
US20060076317A1 (en) 2006-04-13
JP5583888B2 (ja) 2014-09-03
TW200624527A (en) 2006-07-16
CN101040021A (zh) 2007-09-19
EP1799785A2 (en) 2007-06-27
WO2006044417A2 (en) 2006-04-27
MY144187A (en) 2011-08-15
TWI308924B (en) 2009-04-21
KR101128551B1 (ko) 2012-03-23
JP2008516465A (ja) 2008-05-15
IL182170A0 (en) 2007-07-24
WO2006044417B1 (en) 2006-08-31
KR20070084096A (ko) 2007-08-24

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