KR101128551B1 - 귀금속 연마용 중합체 첨가제를 포함하는 ｃｍｐ 조성물 - Google Patents

귀금속 연마용 중합체 첨가제를 포함하는 ｃｍｐ 조성물 Download PDF

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Publication number
KR101128551B1
KR101128551B1 KR1020077010501A KR20077010501A KR101128551B1 KR 101128551 B1 KR101128551 B1 KR 101128551B1 KR 1020077010501 A KR1020077010501 A KR 1020077010501A KR 20077010501 A KR20077010501 A KR 20077010501A KR 101128551 B1 KR101128551 B1 KR 101128551B1
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South Korea
Prior art keywords
polishing
liquid carrier
abrasive
chemical
mechanical polishing
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Expired - Fee Related
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KR1020077010501A
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English (en)
Korean (ko)
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KR20070084096A (ko
Inventor
프란시스코 드 레게 테사우로
벤자민 바이엘
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20070084096A publication Critical patent/KR20070084096A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020077010501A 2004-10-12 2005-10-11 귀금속 연마용 중합체 첨가제를 포함하는 ｃｍｐ 조성물 Expired - Fee Related KR101128551B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/963,108 US7563383B2 (en) 2004-10-12 2004-10-12 CMP composition with a polymer additive for polishing noble metals
US10/963,108 2004-10-12
PCT/US2005/036577 WO2006044417A2 (en) 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals

Publications (2)

Publication Number Publication Date
KR20070084096A KR20070084096A (ko) 2007-08-24
KR101128551B1 true KR101128551B1 (ko) 2012-03-23

Family

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Family Applications (1)

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KR1020077010501A Expired - Fee Related KR101128551B1 (ko) 2004-10-12 2005-10-11 귀금속 연마용 중합체 첨가제를 포함하는 ｃｍｐ 조성물

Country Status (9)

Country Link
US (1) US7563383B2 (https=)
EP (1) EP1799785A2 (https=)
JP (1) JP5583888B2 (https=)
KR (1) KR101128551B1 (https=)
CN (1) CN101040021B (https=)
IL (1) IL182170A (https=)
MY (1) MY144187A (https=)
TW (1) TWI308924B (https=)
WO (1) WO2006044417A2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101371853B1 (ko) * 2005-01-05 2014-03-07 니타 하스 인코포레이티드 연마슬러리
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
KR101564676B1 (ko) * 2008-02-01 2015-11-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
KR101104369B1 (ko) * 2009-04-22 2012-01-16 주식회사 엘지화학 화학적 기계적 연마용 슬러리
CN101955731A (zh) * 2009-07-13 2011-01-26 安集微电子（上海）有限公司 一种化学机械抛光液
JP5321430B2 (ja) * 2009-12-02 2013-10-23 信越半導体株式会社 シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法
JP5582187B2 (ja) 2010-03-12 2014-09-03 日立化成株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
KR101886892B1 (ko) 2010-11-22 2018-08-08 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
US8610280B2 (en) 2011-09-16 2013-12-17 Micron Technology, Inc. Platinum-containing constructions, and methods of forming platinum-containing constructions
JP6044629B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
SG10201606827RA (en) 2012-02-21 2016-10-28 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
US10557059B2 (en) 2012-05-22 2020-02-11 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
CN104073169B (zh) * 2014-06-10 2015-07-22 大庆佳昌晶能信息材料有限公司 一种用于化合物半导体的化学机械抛光剂
WO2021242755A1 (en) * 2020-05-29 2021-12-02 Versum Materials Us, Llc Low dishing oxide cmp polishing compositions for shallow trench isolation applications and methods of making thereof
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
CN116875194A (zh) * 2023-05-18 2023-10-13 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003062338A1 (en) * 2002-01-18 2003-07-31 Cabot Microelectronics Corporation Cmp systems and methods utilizing amine-containing polymers

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5691219A (en) 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
DE19927286B4 (de) 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
US6720264B2 (en) * 1999-11-04 2004-04-13 Advanced Micro Devices, Inc. Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties
JP2004514266A (ja) * 1999-12-14 2004-05-13 ロデール　ホールディングス　インコーポレイテッド 貴金属用研磨組成物
US6242351B1 (en) 1999-12-27 2001-06-05 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers
SG90227A1 (en) * 2000-01-18 2002-07-23 Praxair Technology Inc Polishing slurry
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6787061B1 (en) 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002161267A (ja) * 2000-11-27 2002-06-04 Hitachi Chem Co Ltd 白金族金属用研磨液及びそれを用いた研磨方法
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6719920B2 (en) 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US6730592B2 (en) 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US20030168627A1 (en) 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US20030162399A1 (en) 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
US6821309B2 (en) 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US6604987B1 (en) 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US7160807B2 (en) 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7255810B2 (en) 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003062338A1 (en) * 2002-01-18 2003-07-31 Cabot Microelectronics Corporation Cmp systems and methods utilizing amine-containing polymers

Also Published As

Publication number Publication date
IL182170A (en) 2011-12-29
US7563383B2 (en) 2009-07-21
WO2006044417A3 (en) 2006-08-10
US20060076317A1 (en) 2006-04-13
JP5583888B2 (ja) 2014-09-03
TW200624527A (en) 2006-07-16
CN101040021A (zh) 2007-09-19
EP1799785A2 (en) 2007-06-27
WO2006044417A2 (en) 2006-04-27
MY144187A (en) 2011-08-15
TWI308924B (en) 2009-04-21
JP2008516465A (ja) 2008-05-15
IL182170A0 (en) 2007-07-24
CN101040021B (zh) 2012-06-20
WO2006044417B1 (en) 2006-08-31
KR20070084096A (ko) 2007-08-24

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