CN101038868B - 结晶半导体薄膜的方法 - Google Patents

结晶半导体薄膜的方法 Download PDF

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Publication number
CN101038868B
CN101038868B CN2007101035690A CN200710103569A CN101038868B CN 101038868 B CN101038868 B CN 101038868B CN 2007101035690 A CN2007101035690 A CN 2007101035690A CN 200710103569 A CN200710103569 A CN 200710103569A CN 101038868 B CN101038868 B CN 101038868B
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thin film
laser beam
semiconductor thin
scanning
laser
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CN101038868A (zh
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藤野敏夫
町田晓夫
河野正洋
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Sony Corp
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Sony Corp
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
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    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN2007101035690A 2006-03-13 2007-03-13 结晶半导体薄膜的方法 Expired - Fee Related CN101038868B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP067270/06 2006-03-13
JP2006067270 2006-03-13
JP344129/06 2006-12-21
JP2006344129A JP2007281420A (ja) 2006-03-13 2006-12-21 半導体薄膜の結晶化方法

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CN101038868A CN101038868A (zh) 2007-09-19
CN101038868B true CN101038868B (zh) 2011-11-23

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US (1) US20070212860A1 (enExample)
JP (1) JP2007281420A (enExample)
KR (1) KR20070093371A (enExample)
CN (1) CN101038868B (enExample)
TW (1) TW200802613A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4169073B2 (ja) * 2006-03-13 2008-10-22 ソニー株式会社 薄膜半導体装置および薄膜半導体装置の製造方法
JP2010034366A (ja) 2008-07-30 2010-02-12 Sony Corp 半導体処理装置および半導体処理方法
TWI528418B (zh) 2009-11-30 2016-04-01 應用材料股份有限公司 在半導體應用上的結晶處理
JP6544090B2 (ja) * 2015-07-06 2019-07-17 国立大学法人島根大学 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法
WO2017120584A1 (en) * 2016-01-08 2017-07-13 The Trustees Of Columbia University In The City Of New York Methods and systems for spot beam crystallization
CN105632905B (zh) * 2016-01-21 2018-05-11 武汉华星光电技术有限公司 低温多晶硅薄膜晶体管单元及其制作方法
KR102622712B1 (ko) 2017-10-13 2024-01-08 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 스팟 빔 및 라인 빔 결정화를 위한 시스템들 및 방법들
EP3794340A4 (en) 2018-05-15 2022-02-09 Life Science Biosensor Diagnostics Pty Ltd BIOSENSOR WITH POROUS WICK LAYER

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85103942A (zh) * 1985-05-16 1986-12-24 中国科学院上海冶金所 绝缘层上多晶硅的激光加热再结晶方法
CN1404101A (zh) * 2001-08-30 2003-03-19 富士通株式会社 半导体器件及其制造方法
CN1435864A (zh) * 2002-01-28 2003-08-13 株式会社半导体能源研究所 半导体器件及其制造方法

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DE3779672T2 (de) * 1986-03-07 1993-01-28 Iizuka Kozo Verfahren zum herstellen einer monokristallinen halbleiterschicht.
TW445545B (en) * 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
KR100327087B1 (ko) * 1999-06-28 2002-03-13 구본준, 론 위라하디락사 레이저 어닐링 방법
US7078322B2 (en) * 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
JP4408667B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85103942A (zh) * 1985-05-16 1986-12-24 中国科学院上海冶金所 绝缘层上多晶硅的激光加热再结晶方法
CN1404101A (zh) * 2001-08-30 2003-03-19 富士通株式会社 半导体器件及其制造方法
CN1435864A (zh) * 2002-01-28 2003-08-13 株式会社半导体能源研究所 半导体器件及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2006-66908A 2006.03.09

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TWI352391B (enExample) 2011-11-11
KR20070093371A (ko) 2007-09-18
US20070212860A1 (en) 2007-09-13
JP2007281420A (ja) 2007-10-25
TW200802613A (en) 2008-01-01
CN101038868A (zh) 2007-09-19

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