CN101038868B - 结晶半导体薄膜的方法 - Google Patents

结晶半导体薄膜的方法 Download PDF

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CN101038868B
CN101038868B CN2007101035690A CN200710103569A CN101038868B CN 101038868 B CN101038868 B CN 101038868B CN 2007101035690 A CN2007101035690 A CN 2007101035690A CN 200710103569 A CN200710103569 A CN 200710103569A CN 101038868 B CN101038868 B CN 101038868B
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thin film
laser beam
semiconductor thin
scanning
laser
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Chinese (zh)
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CN101038868A (zh
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藤野敏夫
町田晓夫
河野正洋
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Sony Corp
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Sony Corp
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN2007101035690A 2006-03-13 2007-03-13 结晶半导体薄膜的方法 Expired - Fee Related CN101038868B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006067270 2006-03-13
JP067270/06 2006-03-13
JP344129/06 2006-12-21
JP2006344129A JP2007281420A (ja) 2006-03-13 2006-12-21 半導体薄膜の結晶化方法

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CN101038868A CN101038868A (zh) 2007-09-19
CN101038868B true CN101038868B (zh) 2011-11-23

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US (1) US20070212860A1 (enExample)
JP (1) JP2007281420A (enExample)
KR (1) KR20070093371A (enExample)
CN (1) CN101038868B (enExample)
TW (1) TW200802613A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4169073B2 (ja) * 2006-03-13 2008-10-22 ソニー株式会社 薄膜半導体装置および薄膜半導体装置の製造方法
JP2010034366A (ja) 2008-07-30 2010-02-12 Sony Corp 半導体処理装置および半導体処理方法
TWI459444B (zh) 2009-11-30 2014-11-01 Applied Materials Inc 在半導體應用上的結晶處理
JP6544090B2 (ja) * 2015-07-06 2019-07-17 国立大学法人島根大学 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法
US11437236B2 (en) 2016-01-08 2022-09-06 The Trustees Of Columbia University In Thf City Of New York Methods and systems for spot beam crystallization
CN105632905B (zh) * 2016-01-21 2018-05-11 武汉华星光电技术有限公司 低温多晶硅薄膜晶体管单元及其制作方法
CN111479650A (zh) 2017-10-13 2020-07-31 纽约市哥伦比亚大学理事会 用于点束和线束结晶的系统和方法
US12215374B2 (en) 2018-05-15 2025-02-04 The University Of Newcastle Biosensor with porous wicking layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85103942A (zh) * 1985-05-16 1986-12-24 中国科学院上海冶金所 绝缘层上多晶硅的激光加热再结晶方法
CN1404101A (zh) * 2001-08-30 2003-03-19 富士通株式会社 半导体器件及其制造方法
CN1435864A (zh) * 2002-01-28 2003-08-13 株式会社半导体能源研究所 半导体器件及其制造方法

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DE3779672T2 (de) * 1986-03-07 1993-01-28 Iizuka Kozo Verfahren zum herstellen einer monokristallinen halbleiterschicht.
TW445545B (en) * 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
KR100327087B1 (ko) * 1999-06-28 2002-03-13 구본준, 론 위라하디락사 레이저 어닐링 방법
US7078322B2 (en) * 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
JP4408667B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85103942A (zh) * 1985-05-16 1986-12-24 中国科学院上海冶金所 绝缘层上多晶硅的激光加热再结晶方法
CN1404101A (zh) * 2001-08-30 2003-03-19 富士通株式会社 半导体器件及其制造方法
CN1435864A (zh) * 2002-01-28 2003-08-13 株式会社半导体能源研究所 半导体器件及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2006-66908A 2006.03.09

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Publication number Publication date
CN101038868A (zh) 2007-09-19
JP2007281420A (ja) 2007-10-25
TW200802613A (en) 2008-01-01
TWI352391B (enExample) 2011-11-11
KR20070093371A (ko) 2007-09-18
US20070212860A1 (en) 2007-09-13

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