JP2007281420A - 半導体薄膜の結晶化方法 - Google Patents

半導体薄膜の結晶化方法 Download PDF

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Publication number
JP2007281420A
JP2007281420A JP2006344129A JP2006344129A JP2007281420A JP 2007281420 A JP2007281420 A JP 2007281420A JP 2006344129 A JP2006344129 A JP 2006344129A JP 2006344129 A JP2006344129 A JP 2006344129A JP 2007281420 A JP2007281420 A JP 2007281420A
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Japan
Prior art keywords
thin film
semiconductor thin
scanning
crystallizing
crystal grain
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Pending
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JP2006344129A
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English (en)
Japanese (ja)
Inventor
Toshio Fujino
敏夫 藤野
Akio Machida
暁夫 町田
Masahiro Kono
正洋 河野
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006344129A priority Critical patent/JP2007281420A/ja
Priority to TW096108233A priority patent/TW200802613A/zh
Priority to US11/684,908 priority patent/US20070212860A1/en
Priority to KR1020070024661A priority patent/KR20070093371A/ko
Priority to CN2007101035690A priority patent/CN101038868B/zh
Publication of JP2007281420A publication Critical patent/JP2007281420A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02439—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2006344129A 2006-03-13 2006-12-21 半導体薄膜の結晶化方法 Pending JP2007281420A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006344129A JP2007281420A (ja) 2006-03-13 2006-12-21 半導体薄膜の結晶化方法
TW096108233A TW200802613A (en) 2006-03-13 2007-03-09 Method for crystallizing a semiconductor thin film
US11/684,908 US20070212860A1 (en) 2006-03-13 2007-03-12 Method for crystallizing a semiconductor thin film
KR1020070024661A KR20070093371A (ko) 2006-03-13 2007-03-13 반도체 박막의 결정화 방법
CN2007101035690A CN101038868B (zh) 2006-03-13 2007-03-13 结晶半导体薄膜的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006067270 2006-03-13
JP2006344129A JP2007281420A (ja) 2006-03-13 2006-12-21 半導体薄膜の結晶化方法

Publications (1)

Publication Number Publication Date
JP2007281420A true JP2007281420A (ja) 2007-10-25

Family

ID=38479477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006344129A Pending JP2007281420A (ja) 2006-03-13 2006-12-21 半導体薄膜の結晶化方法

Country Status (5)

Country Link
US (1) US20070212860A1 (enExample)
JP (1) JP2007281420A (enExample)
KR (1) KR20070093371A (enExample)
CN (1) CN101038868B (enExample)
TW (1) TW200802613A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278163B2 (en) 2008-07-30 2012-10-02 Sony Corporation Semiconductor processing apparatus and semiconductor processing method
JP2017017292A (ja) * 2015-07-06 2017-01-19 国立大学法人島根大学 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4169073B2 (ja) * 2006-03-13 2008-10-22 ソニー株式会社 薄膜半導体装置および薄膜半導体装置の製造方法
TWI459444B (zh) 2009-11-30 2014-11-01 Applied Materials Inc 在半導體應用上的結晶處理
US11437236B2 (en) 2016-01-08 2022-09-06 The Trustees Of Columbia University In Thf City Of New York Methods and systems for spot beam crystallization
CN105632905B (zh) * 2016-01-21 2018-05-11 武汉华星光电技术有限公司 低温多晶硅薄膜晶体管单元及其制作方法
CN111479650A (zh) 2017-10-13 2020-07-31 纽约市哥伦比亚大学理事会 用于点束和线束结晶的系统和方法
US12215374B2 (en) 2018-05-15 2025-02-04 The University Of Newcastle Biosensor with porous wicking layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85103942B (zh) * 1985-05-16 1988-03-16 中国科学院上海冶金所 绝缘层上多晶硅的激光加热再结晶方法
DE3779672T2 (de) * 1986-03-07 1993-01-28 Iizuka Kozo Verfahren zum herstellen einer monokristallinen halbleiterschicht.
TW445545B (en) * 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
KR100327087B1 (ko) * 1999-06-28 2002-03-13 구본준, 론 위라하디락사 레이저 어닐링 방법
JP4558262B2 (ja) * 2001-08-30 2010-10-06 シャープ株式会社 半導体装置の製造方法
US7078322B2 (en) * 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
TW200302511A (en) * 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
JP4408667B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278163B2 (en) 2008-07-30 2012-10-02 Sony Corporation Semiconductor processing apparatus and semiconductor processing method
JP2017017292A (ja) * 2015-07-06 2017-01-19 国立大学法人島根大学 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法

Also Published As

Publication number Publication date
CN101038868A (zh) 2007-09-19
CN101038868B (zh) 2011-11-23
TW200802613A (en) 2008-01-01
TWI352391B (enExample) 2011-11-11
KR20070093371A (ko) 2007-09-18
US20070212860A1 (en) 2007-09-13

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