CN101036237A - 织构化发光二极管 - Google Patents
织构化发光二极管 Download PDFInfo
- Publication number
- CN101036237A CN101036237A CNA2005800326857A CN200580032685A CN101036237A CN 101036237 A CN101036237 A CN 101036237A CN A2005800326857 A CNA2005800326857 A CN A2005800326857A CN 200580032685 A CN200580032685 A CN 200580032685A CN 101036237 A CN101036237 A CN 101036237A
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- texturing
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- semiconductor
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 20
- 239000000956 alloy Substances 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 230000006798 recombination Effects 0.000 claims abstract description 5
- 238000005215 recombination Methods 0.000 claims abstract description 5
- 208000012868 Overgrowth Diseases 0.000 claims abstract description 3
- 230000007704 transition Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 238000004821 distillation Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000001093 holography Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 2
- 238000000386 microscopy Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000005253 cladding Methods 0.000 abstract 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0421500.0 | 2004-09-28 | ||
GB0421500A GB2418532A (en) | 2004-09-28 | 2004-09-28 | Textured light emitting diode structure with enhanced fill factor |
PCT/GB2005/003704 WO2006035212A1 (en) | 2004-09-28 | 2005-09-27 | Textured light emitting diodes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101036237A true CN101036237A (zh) | 2007-09-12 |
CN101036237B CN101036237B (zh) | 2012-03-14 |
Family
ID=33397356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800326857A Active CN101036237B (zh) | 2004-09-28 | 2005-09-27 | 织构化发光二极管 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7915622B2 (zh) |
EP (1) | EP1800354A1 (zh) |
JP (1) | JP2008515180A (zh) |
KR (1) | KR20070058612A (zh) |
CN (1) | CN101036237B (zh) |
GB (1) | GB2418532A (zh) |
WO (1) | WO2006035212A1 (zh) |
Cited By (13)
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CN101487974A (zh) * | 2008-01-17 | 2009-07-22 | 晶元光电股份有限公司 | 一种纳米级印模结构及其在发光元件上的应用 |
CN102255009A (zh) * | 2011-06-23 | 2011-11-23 | 映瑞光电科技(上海)有限公司 | Led芯片的制造方法 |
CN102544264A (zh) * | 2012-01-19 | 2012-07-04 | 苏州锦元纳米科技有限公司 | 一种在蓝宝石衬底上制备纳米图案的方法 |
CN103094314A (zh) * | 2011-11-07 | 2013-05-08 | 台湾积体电路制造股份有限公司 | 在硅衬底上生长iii-氮化物的新方法 |
CN101651179B (zh) * | 2008-08-11 | 2013-05-29 | 台湾积体电路制造股份有限公司 | 发光二极管装置及其制造方法 |
CN103430329A (zh) * | 2011-03-03 | 2013-12-04 | 欧司朗光电半导体有限公司 | 用于制造光电子半导体芯片的方法 |
US8791029B2 (en) | 2007-08-13 | 2014-07-29 | Epistar Corporation | Stamp having nanoscale structure and applications therefore in light-emitting device |
CN105633239A (zh) * | 2015-12-31 | 2016-06-01 | 天津三安光电有限公司 | 一种兼具表面粗化及电接触的发光二极管结构及制造方法 |
CN108292694A (zh) * | 2015-07-13 | 2018-07-17 | 科莱约纳诺公司 | 纳米线/纳米锥形状的发光二极管及光检测器 |
US10181549B2 (en) | 2008-08-12 | 2019-01-15 | Epistar Corporation | Light-emitting device having a patterned surface |
CN109872943A (zh) * | 2017-12-05 | 2019-06-11 | Imec 非营利协会 | 形成用于半导体结构的方法以及由该方法制造的半导体结构 |
CN110993743A (zh) * | 2019-12-25 | 2020-04-10 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种异质结光伏器件的制备方法 |
WO2022140906A1 (en) * | 2020-12-28 | 2022-07-07 | Innoscience (suzhou) Semiconductor Co., Ltd. | Semiconductor device structures and methods of manufacturing the same |
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US8013320B2 (en) * | 2006-03-03 | 2011-09-06 | Panasonic Corporation | Nitride semiconductor device and method for fabricating the same |
KR100755598B1 (ko) * | 2006-06-30 | 2007-09-06 | 삼성전기주식회사 | 질화물 반도체 발광소자 어레이 |
US7952109B2 (en) * | 2006-07-10 | 2011-05-31 | Alcatel-Lucent Usa Inc. | Light-emitting crystal structures |
TWI309481B (en) * | 2006-07-28 | 2009-05-01 | Epistar Corp | A light emitting device having a patterned substrate and the method thereof |
DE102006043400A1 (de) * | 2006-09-15 | 2008-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR100857410B1 (ko) * | 2007-03-08 | 2008-09-08 | 전북대학교산학협력단 | 백색 엘이디의 제조방법 |
EP2126963A4 (en) * | 2007-03-16 | 2011-03-16 | Sebastian Lourdudoss | SEMICONDUCTOR HETEROSTRUCTURES AND MANUFACTURE THEREOF |
US8809126B2 (en) | 2007-05-31 | 2014-08-19 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8674593B2 (en) | 2007-05-31 | 2014-03-18 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US9343593B2 (en) | 2007-05-31 | 2016-05-17 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8456393B2 (en) | 2007-05-31 | 2013-06-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US8877101B2 (en) | 2007-05-31 | 2014-11-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, power generating or other electronic apparatus |
US9419179B2 (en) | 2007-05-31 | 2016-08-16 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8846457B2 (en) | 2007-05-31 | 2014-09-30 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8415879B2 (en) | 2007-05-31 | 2013-04-09 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US9425357B2 (en) | 2007-05-31 | 2016-08-23 | Nthdegree Technologies Worldwide Inc. | Diode for a printable composition |
US9534772B2 (en) | 2007-05-31 | 2017-01-03 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting diodes |
US9018833B2 (en) | 2007-05-31 | 2015-04-28 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting or absorbing diodes |
US8852467B2 (en) | 2007-05-31 | 2014-10-07 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
US8044381B2 (en) * | 2007-07-30 | 2011-10-25 | Hewlett-Packard Development Company, L.P. | Light emitting diode (LED) |
US20090034977A1 (en) * | 2007-07-30 | 2009-02-05 | Michael Renne Ty Tan | MULTIPLEXING HIGH SPEED LIGHT EMITTING DIODES (LEDs) |
US7992332B2 (en) | 2008-05-13 | 2011-08-09 | Nthdegree Technologies Worldwide Inc. | Apparatuses for providing power for illumination of a display object |
US8127477B2 (en) | 2008-05-13 | 2012-03-06 | Nthdegree Technologies Worldwide Inc | Illuminating display systems |
US8134169B2 (en) * | 2008-07-01 | 2012-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterned substrate for hetero-epitaxial growth of group-III nitride film |
US8344394B1 (en) * | 2009-09-15 | 2013-01-01 | National Semiconductor Corporation | High-speed avalanche light emitting diode (ALED) and related apparatus and method |
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JP2014060198A (ja) * | 2012-09-14 | 2014-04-03 | Oki Electric Ind Co Ltd | 窒化物半導体発光ダイオードの製造方法、及び窒化物半導体発光ダイオード |
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Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3517091B2 (ja) * | 1997-07-04 | 2004-04-05 | 東芝電子エンジニアリング株式会社 | 窒化ガリウム系半導体発光素子およびその製造方法 |
JP4032538B2 (ja) * | 1998-11-26 | 2008-01-16 | ソニー株式会社 | 半導体薄膜および半導体素子の製造方法 |
JP3906654B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 半導体発光素子及び半導体発光装置 |
JP3882539B2 (ja) * | 2000-07-18 | 2007-02-21 | ソニー株式会社 | 半導体発光素子およびその製造方法、並びに画像表示装置 |
JP4595198B2 (ja) * | 2000-12-15 | 2010-12-08 | ソニー株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
JP2002261327A (ja) * | 2001-03-06 | 2002-09-13 | Sony Corp | 半導体発光素子及び半導体発光素子の製造方法 |
JP2002270893A (ja) * | 2001-03-06 | 2002-09-20 | Sony Corp | 半導体発光素子、表示装置、半導体発光素子の製造方法及び半導体レーザーの製造方法 |
TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
JP3659201B2 (ja) | 2001-07-11 | 2005-06-15 | ソニー株式会社 | 半導体発光素子、画像表示装置、照明装置及び半導体発光素子の製造方法 |
EP1422748A1 (en) * | 2001-08-01 | 2004-05-26 | Nagoya Industrial Science Research Institute | Group iii nitride semiconductor film and its production method |
DE10139798B9 (de) | 2001-08-14 | 2006-12-28 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement mit geometrisch optimierter Auskoppelstruktur |
JP4233268B2 (ja) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
JP2004193498A (ja) * | 2002-12-13 | 2004-07-08 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
US6921924B2 (en) * | 2003-06-18 | 2005-07-26 | United Epitaxy Company, Ltd | Semiconductor light-emitting device |
-
2004
- 2004-09-28 GB GB0421500A patent/GB2418532A/en not_active Withdrawn
-
2005
- 2005-09-27 EP EP05787238A patent/EP1800354A1/en not_active Ceased
- 2005-09-27 WO PCT/GB2005/003704 patent/WO2006035212A1/en active Application Filing
- 2005-09-27 CN CN2005800326857A patent/CN101036237B/zh active Active
- 2005-09-27 JP JP2007532971A patent/JP2008515180A/ja active Pending
- 2005-09-27 US US11/576,151 patent/US7915622B2/en active Active
- 2005-09-27 KR KR1020077008414A patent/KR20070058612A/ko not_active Application Discontinuation
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8791029B2 (en) | 2007-08-13 | 2014-07-29 | Epistar Corporation | Stamp having nanoscale structure and applications therefore in light-emitting device |
CN101487974A (zh) * | 2008-01-17 | 2009-07-22 | 晶元光电股份有限公司 | 一种纳米级印模结构及其在发光元件上的应用 |
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GB2418532A (en) | 2006-03-29 |
CN101036237B (zh) | 2012-03-14 |
US7915622B2 (en) | 2011-03-29 |
EP1800354A1 (en) | 2007-06-27 |
KR20070058612A (ko) | 2007-06-08 |
US20090159907A1 (en) | 2009-06-25 |
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JP2008515180A (ja) | 2008-05-08 |
GB0421500D0 (en) | 2004-10-27 |
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