CN110993743A - 一种异质结光伏器件的制备方法 - Google Patents

一种异质结光伏器件的制备方法 Download PDF

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CN110993743A
CN110993743A CN201911353348.8A CN201911353348A CN110993743A CN 110993743 A CN110993743 A CN 110993743A CN 201911353348 A CN201911353348 A CN 201911353348A CN 110993743 A CN110993743 A CN 110993743A
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depositing
photovoltaic device
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magnetron sputtering
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马立云
姚婷婷
李刚
沈洪雪
彭赛奥
金克武
王天齐
杨扬
王东
汤永康
甘治平
时君
黄海青
程国送
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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Abstract

本发明公开一种异质结光伏器件的制备方法，包括以下步骤：S1、取p型晶硅作为衬底，采用离子束刻蚀工艺或臭氧氧化刻蚀工艺在衬底顶面制作绒面结构；S2、采用磁控溅射工艺或蒸镀工艺在衬底的底面沉积背电极；S3、采用磁控溅射工艺在衬底的顶面沉积n型发射膜层；S4、采用磁控溅射工艺在n型发射膜层顶面沉积透明导电层；S5、采用磁控溅射工艺在透明导电层顶面沉积前电极，得到异质结光伏器件；方法得到的异质结光伏器件具有晶格匹配好、界面态密度低的优点，增强异质结光伏器件的整体性能。

Description

一种异质结光伏器件的制备方法
技术领域
本发明涉及光伏器件技术领域，具体是一种异质结光伏器件的制备方法。
背景技术
异质结，两种不同的半导体相接触所形成的界面区域。通常形成异质结的条件是：两种半导体有相似的晶体结构、相近的原子间距和热膨胀系数。异质结常具有两种半导体各自的PN结都不能达到的优良的光电特性，使它适宜于制作超高速开关器件、太阳能电池以及半导体激光器等。
透明氧化物半导体（Transparent oxide semiconductors，TOS）具有可调节的电导率和高光学透明度，在各种光电应用中具有广阔的前景，例如平板显示器，透明场效应晶体管，紫外线（UV）发光二极管，激光器 p-n异质结是实现这些器件的最普遍的构建基块。此外，器件的性能关键取决于能带对准和界面处的内置电势，因此对微观结构的了解异质界面处的原子结构和电子性质是更好地控制性能的最基本步骤；然而，目前的异质结制备还存在着晶格匹配不好、界面态密度高等缺陷。
发明内容
本发明的目的在于提供一种异质结光伏器件的制备方法，该方法得到的异质结光伏器件具有晶格匹配好、界面态密度低的优点，增强异质结光伏器件的整体性能。
本发明解决其技术问题所采用的技术方案是：
一种异质结光伏器件的制备方法，包括以下步骤：
S1、取p 型晶硅作为衬底，采用离子束刻蚀工艺或臭氧氧化刻蚀工艺在衬底顶面制作绒面结构；
S2、采用磁控溅射工艺或蒸镀工艺在衬底的底面沉积背电极；
S3、采用磁控溅射工艺在衬底的顶面沉积n型发射膜层；
S4、采用磁控溅射工艺在n型发射膜层顶面沉积透明导电层；
S5、采用磁控溅射工艺在透明导电层顶面沉积前电极，得到异质结光伏器件。
进一步的，步骤S1所述离子束刻蚀工艺采用的离子源功率为40W～240W，Ar流量为30sccm，溅射时间为2 min～24min。
进一步的，步骤S1所述臭氧氧化刻蚀工艺采用臭氧去离子水、氢氟酸与硝酸的混合溶液浸泡5～30min，臭氧去离子水、氢氟酸与硝酸的体积比为2:2:1～3:1:1。
进一步的，步骤S2的背电极为厚度0.8～1.2μm的Au、Al或Ag薄膜。
进一步的，步骤S3的n型发射膜层为厚度100～300nm的GaAs、AlAs、ZnTe、CdSe、AlSb、AlGaAs、InP、GaN、SiC或CN薄膜。
进一步的，步骤S4所述透明导电层为厚度400～700nm的GZO、AZO、BZO、IGZO、IZO或ITO薄膜。
进一步的，步骤S5所述前电极为厚度200～600nm的Cu、Zn、Mo、Ti、Al、Ag或Au薄膜。
本发明的有益效果是：
一、采用经过钝化处理去除氧化层并带有绒面结构的p 型晶硅作为衬底，有利于上层n型发射膜层具有较好的附着粘附，在异质结光伏器件中，p 型晶硅承担了主要的吸光作用，绒面结构更利于对光的吸收，提高光能利用率有利于Jsc、Voc及Eff的提升。
二、p 型晶硅采用离子束刻蚀工艺或臭氧氧化刻蚀工艺清洗并绒面结构，这两种方法刻蚀绒面尺寸及图案精准可控，可得到最适宜的绒面结构。
三、n型发射膜层采用GaAs、AlAs、ZnTe、CdSe、AlSb、AlGaAs、InP、GaN、SiC或CN薄膜，使n型发射膜层的禁带宽度及晶格常数均在p 型晶硅以及所选用的透明导电层之间，可以同时作为p 型晶硅与透明导电层的缓冲层，使得异质结光伏器件整体晶格失配小，晶格匹配度好，界面态密度低，转换效率高。
四、采用磁控溅射法，获得的n型发射膜层致密性好，易结晶。
五、透明导电层的作用是收集光生载流子并将其输运到金属电极上，同时，迎光面透明导电层薄膜还必须具备减反射功能，降低器件的表面光反射损失；因此，透明导电层薄膜既要有较好的导电性，又要有较高的透过率；本发明透明导电层可根据n型发射膜层的材料来采用相对应的不同薄膜，调整透明导电层的材料，进而实现优良的光电性能及降低成本。
六、采用磁控溅射法，获得的透明导电层掺杂更充分，相对其他方法薄膜光电性能更佳。
七、前电极采用Cu、Zn、Mo、Ti、Al、Ag或Au薄膜，可与透明导电层形成良好的欧姆接触并减少载流子界面复合。
附图说明
下面结合附图和实施例对本发明进一步说明：
图1是本发明的流程示意图；
图2是本发明制备得到异质结光伏器件的示意图。
具体实施方式
实施例一
结合图1与图2所示，本发明提供一种异质结光伏器件的制备方法，包括以下步骤：
S1、取p 型晶硅作为衬底2，采用离子束刻蚀工艺在衬底2顶面制作绒面结构；
离子束刻蚀工艺具体参数为：离子源功率为100W，Ar流量为30sccm，溅射时间为15min；
S2、采用磁控溅射工艺在衬底2的底面沉积背电极1；背电极1为厚度0.8μm的Al薄膜；
具体为：采用直流磁控溅射法，使用金属Al靶材，通入Ar气流量为30sccm，在衬底2底面沉积Al薄膜，工作压强为0.5Pa，功率为100W；
S3、采用磁控溅射工艺在衬底的顶面沉积n型发射膜层3；n型发射膜层为厚度300nm的GaAs薄膜；
具体为：采用直流磁控溅射法，GaAs合金靶材，通入Ar气流量为30sccm，在衬底2顶面沉积GaAs薄膜，工作压强为0.5Pa，功率为80W；
S4、采用磁控溅射工艺在n型发射膜层3顶面沉积透明导电层4；透明导电层4为厚度500nm的ITO薄膜；
具体为：采用直流磁控溅射法，ITO陶瓷靶材，通入Ar气流量为30sccm，在n型发射膜层3顶面沉积ITO薄膜，工作压强为0.5Pa，功率为80W；
S5、采用磁控溅射工艺在透明导电层4顶面沉积前电极5，前电极5为厚度300nm的Cu薄膜；
具体为：采用直流磁控溅射法，Cu靶材，通入Ar气流量为20sccm，在透明导电层4顶面沉积Cu薄膜，工作压强为0.5Pa，功率为80W，最终得到异质结光伏器件。
经检测及计算，最终获得的异质结光伏器件的填充因子FF、短路电流密度Jsc、转换效率Eff依次为41.25%，21.33mA/cm2，10.49%。
实施例二
结合图1与图2所示，本发明提供一种异质结光伏器件的制备方法，包括以下步骤：
S1、取p 型晶硅作为衬底2，采用臭氧氧化刻蚀工艺在衬底2顶面制作绒面结构；
具体参数为：臭氧去离子水：氢氟酸：硝酸=2:2:1混合溶液浸泡10min；
S2、采用蒸镀工艺在衬底2的底面沉积背电极1；背电极1为厚度1.0μm的Au薄膜；
具体为：采用蒸镀法，使用金属Au丝，加热至300°，Ar气流量为15sccm，电压为380V；
S3、采用磁控溅射工艺在衬底的顶面沉积n型发射膜层3；n型发射膜层为厚度200nm的AlGaAs薄膜；
具体为：采用直流磁控溅射法，AlGaAs合金靶材，通入Ar气流量为30sccm，在衬底2顶面沉积AlGaAs薄膜，工作压强为0.4Pa，功率为100W；
S4、采用磁控溅射工艺在n型发射膜层3顶面沉积透明导电层4；透明导电层4为厚度600nm的GZO薄膜；
具体为：采用直流或射频磁控溅射法，陶瓷靶材，通入Ar气流量为30sccm，在n型发射膜层3顶面沉积GZO薄膜，工作压强为0.2Pa，功率为150W；
S5、采用磁控溅射工艺在透明导电层4顶面沉积前电极5，前电极5为厚度400nm的Ag薄膜；
具体为：采用直流磁控溅射法，Ag靶材，通入Ar气流量为20sccm，在透明导电层4顶面沉积Ag薄膜，工作压强为0.6Pa，功率为50W，最终得到异质结光伏器件。
经检测及计算，最终获得的异质结光伏器件的填充因子FF、短路电流密度Jsc、转换效率Eff依次为44.51%，23.02mA/cm2，11.33%。
实施例三
结合图1与图2所示，本发明提供一种异质结光伏器件的制备方法，包括以下步骤：
S1、取p 型晶硅作为衬底2，采用臭氧氧化刻蚀工艺在衬底2顶面制作绒面结构；
具体参数为：臭氧去离子水：氢氟酸：硝酸=3:1:1混合溶液浸泡20min；
S2、采用蒸镀工艺在衬底2的底面沉积背电极1；背电极1为厚度1.0μm的Al薄膜；
具体为：采用蒸镀法，使用金属Au丝，加热至300°，Ar气流量为15sccm，电压为420V；
S3、采用磁控溅射工艺在衬底的顶面沉积n型发射膜层3；n型发射膜层为厚度150nm的GaN薄膜；
具体为：采用直流磁控溅射法，GaN合金靶材，通入Ar气流量为30sccm，在衬底2顶面沉积GaN薄膜，工作压强为0.3Pa，功率为150W；
S4、采用磁控溅射工艺在n型发射膜层3顶面沉积透明导电层4；透明导电层4为厚度700nm的GZO薄膜；
具体为：采用直流或射频磁控溅射法，陶瓷靶材，通入Ar气流量为30sccm，在n型发射膜层3顶面沉积GZO薄膜，工作压强为0.1Pa，功率为180W；
S5、采用磁控溅射工艺在透明导电层4顶面沉积前电极5，前电极5为厚度500nm的Ag薄膜；
具体为：采用直流磁控溅射法，Ag靶材，通入Ar气流量为20sccm，在透明导电层4顶面沉积Ag薄膜，工作压强为0.4Pa，功率为60W，最终得到异质结光伏器件。
经检测及计算，最终获得的异质结光伏器件的填充因子FF、短路电流密度Jsc、转换效率Eff依次为48.49%，25.08mA/cm2，12.33%。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (7)

1.一种异质结光伏器件的制备方法，其特征在于，包括以下步骤：
S1、取p 型晶硅作为衬底，采用离子束刻蚀工艺或臭氧氧化刻蚀工艺在衬底顶面制作绒面结构；
S2、采用磁控溅射工艺或蒸镀工艺在衬底的底面沉积背电极；
S3、采用磁控溅射工艺在衬底的顶面沉积n型发射膜层；
S4、采用磁控溅射工艺在n型发射膜层顶面沉积透明导电层；
S5、采用磁控溅射工艺在透明导电层顶面沉积前电极，得到异质结光伏器件。
2.根据权利要求1所述的一种异质结光伏器件的制备方法，其特征在于，步骤S1所述离子束刻蚀工艺采用的离子源功率为40W～240W，Ar流量为30sccm，溅射时间为2 min～24min。
3.根据权利要求1所述的一种异质结光伏器件的制备方法，其特征在于，步骤S1所述臭氧氧化刻蚀工艺采用臭氧去离子水、氢氟酸与硝酸的混合溶液浸泡5～30min，臭氧去离子水、氢氟酸与硝酸的体积比为2:2:1～3:1:1。
4.根据权利要求1所述的一种异质结光伏器件的制备方法，其特征在于，步骤S2的背电极为厚度0.8～1.2μm的Au、Al或Ag薄膜。
5.根据权利要求1所述的一种异质结光伏器件的制备方法，其特征在于，步骤S3的n型发射膜层为厚度100～300nm的GaAs、AlAs、ZnTe、CdSe、AlSb、AlGaAs、InP、GaN、SiC或CN薄膜。
6.根据权利要求1所述的一种异质结光伏器件的制备方法，其特征在于，步骤S4所述透明导电层为厚度400～700nm的GZO、AZO、BZO、IGZO、IZO或ITO薄膜。
7.根据权利要求1所述的一种异质结光伏器件的制备方法，其特征在于，步骤S5所述前电极为厚度200～600nm的Cu、Zn、Mo、Ti、Al、Ag或Au薄膜。
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101036237A (zh) * 2004-09-28 2007-09-12 王望南 织构化发光二极管
CN101455124A (zh) * 2006-05-26 2009-06-10 富士胶片株式会社 表面发射型电致发光器件
CN102938429A (zh) * 2012-12-21 2013-02-20 国电光伏(江苏)有限公司 一种减反射异质结太阳能电池及其制备方法
RU2013113078A (ru) * 2013-03-22 2014-09-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Белгородский государственный национальный исследовательский университет" Фотовольтаическая структура
CN104170246A (zh) * 2011-09-26 2014-11-26 第一太阳能有限公司 估算太阳能装置的短路电流的系统及方法
CN105047734A (zh) * 2015-08-27 2015-11-11 江苏辉伦太阳能科技有限公司 一种多晶硅表面倒金字塔结构及其制备方法
CN105374860A (zh) * 2015-12-08 2016-03-02 北京华进创威电子有限公司 一种氮化镓基绝缘栅双极晶体管制备方法及其产品
CN107785457A (zh) * 2017-10-16 2018-03-09 浙江昱辉阳光能源江苏有限公司 一种p型双面晶硅太阳电池的制作工艺
CN108649076A (zh) * 2018-05-15 2018-10-12 中国电子科技集团公司第五十五研究所 具有超薄GaAs发射层的变Al组分透射式GaAlAs光电阴极

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101036237A (zh) * 2004-09-28 2007-09-12 王望南 织构化发光二极管
CN101455124A (zh) * 2006-05-26 2009-06-10 富士胶片株式会社 表面发射型电致发光器件
CN104170246A (zh) * 2011-09-26 2014-11-26 第一太阳能有限公司 估算太阳能装置的短路电流的系统及方法
CN102938429A (zh) * 2012-12-21 2013-02-20 国电光伏(江苏)有限公司 一种减反射异质结太阳能电池及其制备方法
RU2013113078A (ru) * 2013-03-22 2014-09-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Белгородский государственный национальный исследовательский университет" Фотовольтаическая структура
CN105047734A (zh) * 2015-08-27 2015-11-11 江苏辉伦太阳能科技有限公司 一种多晶硅表面倒金字塔结构及其制备方法
CN105374860A (zh) * 2015-12-08 2016-03-02 北京华进创威电子有限公司 一种氮化镓基绝缘栅双极晶体管制备方法及其产品
CN107785457A (zh) * 2017-10-16 2018-03-09 浙江昱辉阳光能源江苏有限公司 一种p型双面晶硅太阳电池的制作工艺
CN108649076A (zh) * 2018-05-15 2018-10-12 中国电子科技集团公司第五十五研究所 具有超薄GaAs发射层的变Al组分透射式GaAlAs光电阴极

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
周升国等: "《耐磨防腐非晶碳薄膜技术》", 30 November 2018 *
张云龙: "《碳化硅及其复合材料的制造与应用》", 1 July 2015 *

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