WO2020220394A1 - 一种双面发电太阳能电池及其制备方法 - Google Patents

一种双面发电太阳能电池及其制备方法 Download PDF

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WO2020220394A1
WO2020220394A1 PCT/CN2019/086564 CN2019086564W WO2020220394A1 WO 2020220394 A1 WO2020220394 A1 WO 2020220394A1 CN 2019086564 W CN2019086564 W CN 2019086564W WO 2020220394 A1 WO2020220394 A1 WO 2020220394A1
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aluminum
solar cell
paste
silicon
silicon wafer
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English (en)
French (fr)
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朱鹏
刘媛
吴广
郑金华
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南通天盛新能源股份有限公司
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Priority to EP19927345.9A priority Critical patent/EP3916813A4/en
Publication of WO2020220394A1 publication Critical patent/WO2020220394A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention belongs to the field of photovoltaic technology, and specifically relates to a double-sided power generation solar cell and a preparation method thereof.
  • Photovoltaic technology is a technology that uses large-area p-n junction diodes to convert solar energy into electrical energy.
  • This p-n junction diode is called a solar cell.
  • the semiconductor materials used to make solar cells have a certain forbidden band width. When the solar cell is exposed to solar radiation, photons with energy exceeding the forbidden band width generate electron-hole pairs in the solar cell.
  • the pn junction separates the electron-hole pairs, and the pn junction
  • the asymmetry determines the flow direction of different types of photo-generated carriers, which can output power through external circuit connections. This is similar to the principle of ordinary electrochemical cells.
  • the passivation film effectively passivates a large number of dangling bonds and defects (such as dislocations, grain boundaries, and point defects) on the surface of the silicon material, thereby reducing the recombination rate of photo-generated carriers on the silicon surface and increasing the effective life of minority carriers, thereby Promote the improvement of photovoltaic conversion efficiency of solar cells.
  • the passivation film also has the effect of increasing back reflection, thereby increasing the absorption of sunlight by the silicon body material, increasing the concentration of photo-generated carriers and increasing the photocurrent density.
  • Chinese patent CN104362189B is a kind of back passivation solar energy and its preparation method.
  • the back passivation layer is etched by etching aluminum paste, and then the back all aluminum paste is printed to form a local aluminum back field.
  • the back passivation prepared by this method The amount of aluminum paste used in solar energy is large, and the cost is high.
  • the use of etching aluminum paste is incomplete and can only provide single-sided power generation.
  • Chinese patent CN103489934A is a double-sided light-transmitting partial back field crystalline silicon solar cell.
  • the back electric field of the solar cell is a local aluminum back field.
  • the back passivation film is opened or grooved by laser or chemical etching. ,
  • the cost of laser drilling or grooving is high, and laser grooving equipment needs to be added to the production line.
  • the cost is high. Acid chemical etching causes great damage to solar cells, and requires subsequent cleaning processes, which is relatively expensive.
  • the present invention provides a double-sided power generation solar cell and a preparation method thereof.
  • the solar cell is etched with a partial aluminum back on the passivation film on the back of the crystalline silicon through inorganic slurry.
  • the inorganic etching paste has a low burn-through temperature, and the etching degree is more uniform than that of etching aluminum paste.
  • subsequent cleaning is not required, and the operation process becomes simple, thereby increasing
  • the photoelectric conversion efficiency of the solar cell is improved, and the high-conductivity silver paste is printed on the inorganic etching paste, which can further improve the conversion efficiency.
  • the first object of the present invention is to provide a double-sided power generation solar cell, which includes a silicon substrate, an N emitter electrode, a front anti-reflection passivation film and a front electrode are sequentially arranged on the front surface of the silicon substrate from bottom to top, and The back passivation film, back electric field and back electrode are arranged on the back of the silicon substrate from top to bottom, characterized in that: the solar cell is a double-sided solar cell, the back electric field is a local aluminum back electric field, and the local aluminum back After the electric field is etched on the back passivation film with an inorganic etching paste, a linear slot is formed, and then the slot is covered with a highly conductive aluminum paste.
  • the solar cell has a BSF layer of 2-5 ⁇ m.
  • the inorganic etching slurry is an inorganic non-metallic etching slurry.
  • the local aluminum back field (2) is a group of straight strips arranged in parallel, uniformly distributed in the back passivation film 1, and the groove width on the local aluminum back field (2) is 10-25 ⁇ m, the depth of the etching groove on the local aluminum back electric field (2) is 120-150 nm, and the distance between two adjacent grooves on the local aluminum back electric field (2) is 0.6-1 mm.
  • the conductivity of the highly conductive aluminum paste is 1 ⁇ 10 -6 to 2 ⁇ 10 -5 ⁇ cm, and the width of the linear highly conductive aluminum paste is 15 to 50 ⁇ m, two adjacent The pitch of the linear high-conductivity aluminum paste is 0.6-2mm.
  • the silicon substrate (5) is a p-type crystalline silicon wafer
  • the P-type silicon is formed by a method of growing a P-type silicon raw material crystal to form an ingot and then slice it.
  • Another object of the present invention is to provide a method for preparing a double-sided power generation solar cell, the technical point of which is that it includes the following preparation steps:
  • S1 select silicon wafer, texturing, cleaning: select 156 ⁇ 156mm P-type silicon, form a suede on the front of the silicon wafer, use wet or dry etching technology to form a suede on the surface of the P-type silicon, reflectivity Control within 10-30%;
  • S2 Phosphorus diffusion Phosphorus diffusion is carried out on the front surface of the silicon wafer processed by S1 to form an N-type emitter.
  • the N-type emitter can be formed by thermal diffusion or ion implantation.
  • the diffusion of the silicon wafer is preferably trichloro Oxy-phosphorus, the sheet resistance should be controlled at 75 ⁇ 100ohm/sq during diffusion;
  • S3 back junction removal on the basis of S2, the equipment removes the phosphosilicate glass formed during the diffusion process, and uses HF solution to remove the phosphosilicate glass layer formed during the diffusion process of the front surface of the N-type emitter and the back surface of the P-type silicon wafer;
  • S4 Deposition of the back passivation film firstly deposit 8-12nm aluminum oxide or silicon dioxide on the back of the silicon wafer using PVECD equipment, and then use PVECD equipment to deposit 70-80nm nitrogen on the aluminum oxide layer or silicon dioxide layer Silicon, and finally form the back passivation layer;
  • S7 Cover the linear aluminum paste at the slot, and print the front electrode: Print the linear high-conductivity aluminum paste at the slot on the back of the silicon wafer to cover the etched inorganic paste to form a local aluminum back field.
  • the back electrode silver paste is printed on the back of the silicon wafer and dried;
  • a local aluminum back field is formed: the silicon wafer is sintered at a high temperature, and the inorganic etching slurry etches the back passivation layer during the sintering process to form a local aluminum back field connecting the all-aluminum back electric field and the P-type silicon.
  • the Al 2 O 3 or SiO x film thickness in the step (4) is 2-12 nm, and the SiN x film thickness is 70-100 nm.
  • the temperature of the inorganic etching slurry for etching the groove is 200-450°C.
  • the sintering temperature of the aluminum paste in the step (8) is 730-770°C.
  • the groove width on the aluminum back electric field is 10-25 ⁇ m
  • the groove depth on the local aluminum back electric field is 120 to 150 nm
  • the local aluminum back electric field is adjacent
  • the distance between the two grooves is 0.6 ⁇ 1mm
  • the width of the linear aluminum paste is 15 ⁇ 30 ⁇ m
  • the distance between two adjacent linear aluminum pastes is 0.6 ⁇ 1mm.
  • Comparison of the groove width of the local aluminum back field solar cell Small, small metal composite, effectively improving the photoelectric conversion efficiency of the solar cell of the present invention.
  • the solar cell has a BSF layer of 2-5 ⁇ m. This solar cell back electric field structure can increase the thickness of the BSF layer and destroy the silicon substrate. Reduce, reduce the consumption of aluminum paste, thereby increasing the photoelectric conversion rate.
  • the method for preparing a double-sided power generation solar cell of the present invention uses an inorganic etching slurry to form linear grooves on the back passivation film of a local aluminum back electric field.
  • the price of the etching slurry is cheap, and the The etching slurry is used to etch the back passivation layer at a temperature of 200 to 450°C.
  • the etching temperature is low, which saves energy.
  • the amount of the etching slurry is small and the cost of solar cells is saved.
  • the inorganic etching slurry etches
  • the passivation film on the back is uniform, which can form good contact, and does not need to be cleaned with organic solvents after etching, and the operation is convenient.
  • Fig. 1 is a schematic structural diagram of a double-sided power generation solar cell of the present invention.
  • 1-back passivation film 2-partial aluminum back field; 3-front electrode; 4-back electrode; 5-silicon substrate; 6-emitter; 7-front anti-reflection passivation film.
  • a back passivation solar cell of the present invention includes a back passivation film 1, a local aluminum back field 2, a front electrode 3, a back electrode 4, a silicon substrate 5, an N-type emitter 6 and a front surface reduction
  • the reflective passivation film 7; the back electrode 4, the local aluminum back field 2, the back passivation film 1, the silicon substrate 5, the N-type emitter 6, the front anti-reflection passivation film 7 and the front electrode 3 are sequentially connected from bottom to top
  • the local aluminum back field 2 is formed by etching the back passivation layer 1 with an inorganic etching slurry and sintering.
  • the local aluminum back field 2 is a group of straight strips arranged in parallel, which are evenly distributed in the back passivation film 1.
  • the silicon substrate 5 in the present invention is P-type silicon.
  • the P-type silicon is grown by a P-type silicon raw material crystal. After the ingot is formed, it is sliced into a size of 156mm x 156mm, but it is not limited to this size.
  • the solar cell is printed with high-conductivity aluminum paste, and the conductivity of the high-conductivity aluminum paste is 1 ⁇ 10 -6 ⁇ 2 ⁇ 10 -5 ⁇ cm, and the groove width on the local aluminum back electric field 2 is 10 ⁇ 25 ⁇ m, The depth of the groove on the local aluminum back electric field 2 is 120 to 150 nm, thereby reducing the contact resistance, and the distance between two adjacent grooves on the local aluminum back electric field 2 is 0.6 to 1 mm, thereby reducing metallization and recombination.
  • the width of the linear aluminum paste is 15-50 ⁇ m, and the distance between two adjacent linear aluminum pastes is 0.6-1mm.
  • the slot width of the local aluminum back field solar cell is relatively small, and the metal composite produced is small, which effectively improves the present invention The photoelectric conversion efficiency of solar cells.
  • Comparative example 1 Ordinary solar cell without local aluminum back field
  • Comparative Example 2 Using laser grooving and screen printing to prepare solar cells with a partial aluminum back field;
  • Comparative Example 3 The printed inorganic etching paste provided in the prior art is used to prepare a solar cell with a partial aluminum back field;
  • the method of the present invention is used to print the inorganic etching paste to prepare a solar cell with a local aluminum back field. Except for the different steps for preparing the local aluminum back field, the other layers have the same manufacturing method.
  • the specific experimental results are compared in Table 1 below:
  • the invention provides a method for preparing a back passivated solar cell, which includes the following steps:
  • S1 Select 156 ⁇ 156mm P-type silicon to form a textured surface on the front surface of the silicon wafer.
  • the reflectivity is controlled at 10-30%.
  • S2 Phosphorus diffusion is performed on the front surface of the silicon wafer after S1 treatment to form an N-type emitter.
  • the N-type emitter can be formed by thermal diffusion or ion implantation.
  • the diffusion of the silicon wafer is preferably phosphorus oxychloride. , It is necessary to control the sheet resistance at 75 ⁇ 100ohm/sq during diffusion.
  • the equipment removes the phosphosilicate glass formed during the diffusion process, and uses an HF solution to remove the phosphosilicate glass layer formed during the diffusion process of the front surface of the N-type emitter and the back surface of the P-type silicon wafer.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • PECVD uses microwave or radio frequency to ionize the gas containing the film constituent atoms to form a plasma locally.
  • the plasma has a strong chemical activity and is easy to react to deposit the desired film on the substrate.
  • S6 Use screen printing or inkjet printing to print inorganic etching paste on the back of the silicon wafer, where the inorganic paste is printed on the back passivation layer in parallel, and dried, where the inorganic etching paste is at 300-450°C
  • the back passivation layer can be etched during the lower sintering process, and the aluminum paste fills the straight grooves to form a local aluminum back field connecting the full aluminum back electric field and the P-type silicon.
  • S7 Print a linear high-conductivity aluminum paste on the slot on the back of the silicon wafer to cover the etched inorganic paste to form a local aluminum back field, and then dry, print back electrode silver paste on the back of the silicon wafer, and dry .
  • the silicon wafer is sintered at a high temperature of 730 to 770°C.
  • the inorganic etching slurry etches the back passivation layer to form a local aluminum back field connecting the full aluminum back electric field and the P-type silicon.
  • S1 Select 156 ⁇ 156mm P-type silicon to form a textured surface on the front surface of the silicon wafer.
  • the reflectivity is controlled at 20%.
  • S2 Phosphorus diffusion is performed on the front surface of the silicon wafer after S1 treatment to form an N-type emitter.
  • the N-type emitter can be formed by thermal diffusion or ion implantation.
  • the diffusion of the silicon wafer is preferably phosphorus oxychloride.
  • the sheet resistance needs to be controlled at 90ohm/sq during diffusion.
  • the equipment removes the phosphosilicate glass formed during the diffusion process, and uses an HF solution to remove the phosphosilicate glass layer formed during the diffusion process of the front surface of the N-type emitter and the back surface of the P-type silicon wafer.
  • S6 Print the back electrode.
  • the back passivation layer can be etched during the sintering process at 375°C, and the aluminum paste fills the straight grooves to form a local aluminum back field connecting the full aluminum back electric field and the P-type silicon.
  • S7 Print a linear high-conductivity aluminum paste on the slot on the back of the silicon wafer to cover the inorganic etching paste to form a local aluminum back field, and then dry, print back electrode silver paste on the back of the silicon wafer, and dry .
  • the silicon wafer is sintered at a high temperature of 750°C.
  • the inorganic etching slurry etches the back passivation layer to form a local aluminum back field connecting the all-aluminum back electric field and the P-type silicon to obtain a double-sided power generation solar cell .
  • S1 Select 156 ⁇ 156mm P-type silicon to form a textured surface on the front surface of the silicon wafer, and use wet or dry etching technology to form a textured surface on the surface of the P-type silicon wafer, with the reflectivity controlled at 10%.
  • S2 Phosphorus diffusion is performed on the front surface of the silicon wafer after S1 treatment to form an N-type emitter.
  • the N-type emitter can be formed by thermal diffusion or ion implantation.
  • the diffusion of the silicon wafer is preferably phosphorus oxychloride.
  • the sheet resistance needs to be controlled at 75ohm/sq during diffusion.
  • the equipment removes the phosphosilicate glass formed during the diffusion process, and uses an HF solution to remove the phosphosilicate glass layer formed during the diffusion process of the front surface of the N-type emitter and the back surface of the P-type silicon wafer.
  • S6 Print the back electrode.
  • S7 Print a linear high-conductivity aluminum paste on the slot on the back of the silicon wafer to cover the etched inorganic paste to form a local aluminum back field, and then dry, print back electrode silver paste on the back of the silicon wafer, and dry .
  • the silicon wafer is sintered at a high temperature of 730°C.
  • the inorganic etching slurry etches the back passivation layer to form a local aluminum back field connecting the all-aluminum back electric field and the P-type silicon to obtain a double-sided power generation solar cell .
  • S1 Select 156 ⁇ 156mm P-type silicon to form a suede on the front surface of the silicon wafer. Use wet or dry etching technology to form a suede on the surface of the P-type silicon wafer. The reflectivity is controlled at 30%.
  • S2 Phosphorus diffusion is performed on the front surface of the silicon wafer after S1 treatment to form an N-type emitter.
  • the N-type emitter can be formed by thermal diffusion or ion implantation.
  • the diffusion of the silicon wafer is preferably phosphorus oxychloride.
  • the sheet resistance needs to be controlled at 75ohm/sq during diffusion.
  • the equipment removes the phosphosilicate glass formed during the diffusion process, and uses an HF solution to remove the phosphosilicate glass layer formed during the diffusion process of the front surface of the N-type emitter and the back surface of the P-type silicon wafer.
  • S6 Print the back electrode.
  • S7 Print a linear high-conductivity aluminum paste on the slot on the back of the silicon wafer to cover the etched inorganic paste to form a local aluminum back field, and then dry, print back electrode silver paste on the back of the silicon wafer, and dry .
  • the silicon wafer is sintered at a high temperature of 770°C.
  • the inorganic etching slurry etches the back passivation layer to form a local aluminum back field connecting the all-aluminum back electric field and the P-type silicon to obtain a double-sided power generation solar cell .

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Abstract

本发明公开了一种双面发电太阳能电池，包括硅基体，从下而上依次设于硅基体正面的N发射电极、正面减反射钝化膜和正面电极，以及从上而下设于硅基体背面的背面钝化膜、背电场和背电极，太阳能电池为双面太阳能电池，背电场为局部铝背电场，局部铝背电场通过在背面钝化膜上用无机刻蚀浆料刻蚀后呈线性开槽，然后在开槽处覆盖高导电铝浆，太阳能电池有2～5μm的BSF层。本发明的太阳能电池背电场结构，能够使得BSF层厚度增加，硅基体破坏减少，铝浆耗量减少，从而提高光电转化率。

Description

一种双面发电太阳能电池及其制备方法 技术领域
本发明属于光伏技术领域，具体涉及一种双面发电太阳能电池及其制备方法。
背景技术
光伏技术是一门利用大面积的p-n结二极管将太阳能转化为电能的技术。这个p-n结二极管叫做太阳能电池。制作太阳能电池的半导体材料都具有一定的禁带宽度，当太阳能电池受到太阳辐射时，能量超过禁带宽度的光子在太阳电池中产生电子空穴对，p-n结将电子空穴对分离，p-n结的非对称性决定了不同类型的光生载流子的流动方向，通过外部电路连接可以向外输出功率。这跟普通的电化学电池原理类似。
工业化生产p型晶硅太阳能电池通常采用全铝背场结构，即背面整面印刷铝浆，烧结后形成铝背场。这种结构的缺点是没有背面钝化和背面反射率低，从而影响了电池的电压和电流性能。局部铝背场电池克服了以上缺点，这种电池采用具有钝化效果的薄膜钝化电池背表面同时增加背表面反射率。钝化膜有效钝化硅材料表面存在的大量悬垂键和缺陷(如位错，晶界以及点缺陷等)，从而降低光生载流子硅表面复合速率，提高少数载流子的有效寿命，从而促进太阳能电池光电转化效率的提升。钝化膜同时具有增加背面反射的效果，从而增加硅体材料对太阳光的吸收，提高光生载流子的浓度从而增加光电流密度。
中国专利CN104362189B一种背面钝化太阳能及其制备方法，该专利中用由刻蚀铝浆刻蚀背面钝化层，然后后印刷背面全铝浆形成局部铝背场，该方法制备的背面钝化太阳能使用的铝浆的用量大，成本高，使用刻蚀铝浆刻蚀不完 全，仅能提供单面发电。
中国专利CN103489934A一种双面透光的局部背场晶体硅太阳能电池，该太阳能电池的背电场为局部铝背场，其在背面钝化膜上通过激光或者化学刻蚀的方法开孔或者开槽，激光开孔或者开槽成本高，还需要在产线上增加激光开槽的设备，成本高，酸的化学刻蚀对太阳能电池的损害大，且需要后续加入清洗工艺，成本较高。
发明内容
发明目的：为了解决现有技术的不足，本发明提供了一种双面发电太阳能电池及其制备方法，该太阳能电池通过在晶体硅背面的钝化膜上通过无机浆料刻蚀设置局部铝背场，该无机刻蚀浆料烧穿的温度低、相较于刻蚀铝浆刻蚀程度比较均匀，相较于酸化学刻蚀，不需要进行后续的清洗，操作过程变简单了，从而增加了太阳能电池的光电转换效率，且该无机刻蚀浆料上层印刷高导电银浆，可进一步提高转化效率。
技术方案：本发明的第一个目的是提供一种双面发电太阳能电池，包括硅基体，从下而上依次设于硅基体正面的N发射电极、正面减反射钝化膜和正面电极，以及从上而下设于硅基体背面的背面钝化膜、背电场和背电极，其特征在于：所述太阳能电池为双面太阳能电池，所述背电场为局部铝背电场，所述局部铝背电场通过在背面钝化膜上用无机刻蚀浆料刻蚀后呈线性开槽，然后在开槽处覆盖高导电铝浆，所述太阳能电池有2～5μm的BSF层。
作为本发明的优选方案，所述无机刻蚀浆料为无机非金属刻蚀浆料。
作为本发明的优选方案，所述局部铝背场(2)为一组平行排列的直条组，均匀分布在背面钝化膜1内，所述局部铝背电场(2)上的槽宽为10～25μm，所述局部铝背电场(2)上的刻蚀槽深为120～150nm，所述局部铝背电场(2) 上相邻两个槽之间的距离为0.6～1mm。
作为本发明的优选方案，所述高导电铝浆的导电性为1×10 -6～2×10 -5Ω·cm，所述线性高导电铝浆的宽度为15～50μm，相邻两个线性高导电铝浆的间距为0.6～2mm。
作为本发明的优选方案，所述的硅基体(5)为p型晶体硅片，该P型硅是通过P型硅原料晶体成长的方法，形成晶棒后，切片形成。
本发明的另一个目的是提供一种双面发电太阳能电池的制备方法，其技术点在于：包括以下制备步骤：
S1选取硅片，制绒，清洗：选取156×156mm的P型硅，在硅片的正面形成绒面，选用湿法或者干法刻蚀技术，在P型硅片表面形成绒面，反射率控制在10～30％；
S2磷扩散：在S1处理过得硅片正面进行磷扩散，形成N型发射极，该N型发射极可通过热扩散或者离子注入等方法形成，其中，所述硅片的扩散优选采用三氯氧磷，在扩散时需控制方块电阻在75～100ohm/sq；
S3去背结：在S2的基础上设备去除扩散过程形成的磷硅玻璃，使用HF溶液去除所述N型发射极正面及所述P型硅片背面扩散过程中形成的磷硅玻璃层；
S4沉积背面钝化膜：采用PVECD设备首先在在硅片背面沉积8～12nm三氧化二铝或者二氧化硅，然后采用PVECD设备在三氧化二铝层或者二氧化硅层上沉积70～80nm氮化硅，最后形成背面钝化层；
S5沉积正面减反射钝化膜：在所述硅片正面形成氮化硅减反射的钝化膜；
S6印刷背电极，在背面钝化膜上印刷无机刻蚀浆料进行刻蚀开槽：在所述硅片背面采用丝网印刷或喷墨方式印刷无机刻蚀浆料，其中无机浆料平行印刷在背面钝化层上，烘干，其中无机刻蚀浆料在300～450℃下烧结过程中能刻蚀背 面钝化层，并且该铝浆填充直条槽，形成连接全铝背电场和P型硅的局部铝背场；
S7在开槽处覆盖线性铝浆，印刷正面电极：在所述硅片背面的开槽处印刷线性高导电铝浆，覆盖住刻蚀无机浆料，形成局部铝背场，烘干，在所述硅片背面印刷背电极银浆，烘干；
S8烧结后制成局部铝背场：将硅片进行高温烧结，烧结过程中无机刻蚀浆料刻蚀背面钝化层，形成连接全铝背电场和P型硅的局部铝背场。
作为本发明的优选方案，所述步骤(4)的Al 2O 3或者SiO x膜厚为2～12nm，所述SiN x膜厚为70～100nm。
作为本发明的优选方案，所述步骤(6)中无机刻蚀浆料刻蚀开槽的温度为200～450℃。
作为本发明的优选方案，所述步骤(8)中铝浆烧结温度为730～770℃。
有益效果：本发明的具体优势如下：
(1)本发明的一种双面发电太阳能电池，铝背电场上的槽宽为10～25μm，所述局部铝背电场上的槽深为120～150nm，所述局部铝背电场上相邻两个槽之间的距离为0.6～1mm，线性铝浆的宽度为15～30μm，相邻两个线性铝浆的间距为0.6～1mm，该局部铝背场太阳能电池的开槽的槽宽比较小，产生的金属复合小，有效提高本发明的太阳能电池的光电转换效率，所述太阳能电池有2～5μm的BSF层，这种太阳能电池背电场结构，能够使得BSF层厚度增加，硅基体破坏减少，铝浆耗量减少，从而提高光电转化率。
(2)本发明的的一种双面发电太阳能电池的制备方法，采用无机刻蚀浆料在局部铝背电场的背面钝化膜上呈线性开槽，该刻蚀浆的价格便宜，使用该刻蚀浆料刻蚀背面钝化层的温度为200～450℃，刻蚀温度低，节约能源，该刻蚀浆 料用量少，节约太阳能电池的使用成本，该无机刻蚀浆料刻蚀背面钝化膜均匀，可使形成良好的接触，且在刻蚀后不需要用有机溶剂进行清洗，操作方便。
附图说明
图1是本发明的一种双面发电太阳能电池的结构示意图。
1-背面钝化膜；2-局部铝背场；3-正面电极；4-背电极；5-硅基体；6-发射极；7-正面减反射钝化膜。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述，以使本领域的技术人员能够更好的理解本发明的优点和特征，从而对本发明的保护范围做出更为清楚的界定。本发明所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示，本发明的一种背面钝化太阳能电池，包括背面钝化膜1、局部铝背场2、正面电极3、背电极4、硅基体5、N型发射极6和正面减反射钝化膜7；所述背面电极4、局部铝背场2、背面钝化膜1、硅基体5、N型发射极6、正面减反射钝化膜7和正面电极3从下至上依次连接，所述局部铝背场2由无机刻蚀浆料刻蚀所述背面钝化层1烧结后形成。
所述局部铝背场2为一组平行排列的直条组，均匀分布在背面钝化膜1内。
需要说明的是，本发明中所述硅基体5为P型硅，该P型硅是通过P型硅原料晶体成长的方法，形成晶棒后，切片成156mm x 156mm的尺寸，但不限于该尺寸。
该太阳能电池印刷的为高导电铝浆，其中该高导电铝浆的导电性为1×10 -6～2×10 -5Ω·cm其中局部铝背电场2上的槽宽为10～25μm，所述局部铝背 电场2上的槽深为120～150nm，从而减少接触电阻，所述局部铝背电场2上相邻两个槽之间的距离为0.6～1mm，从而减少金属化复合，其中线性铝浆的宽度为15～50μm，相邻两个线性铝浆的间距为0.6～1mm，该局部铝背场太阳能电池的开槽的槽宽比较小，产生的金属复合小，有效提高本发明的太阳能电池的光电转换效率。
按照上述方法制备得到的太阳能电池，进行一下的实验：
对比例1：没有局部铝背场的普通太阳能电池；
对比例2：采用激光开槽和丝网印刷方式制备局部铝背场的太阳能电池；
对比例3：采用现有技术所提的印刷无机刻蚀浆料来制备局部铝背场的太阳能电池；
实施例：
采用本发明的方式印刷无机刻蚀浆料来制备局部铝背场的太阳能电池，除制备局部铝背场的步骤不同外，其余各层的制作方法皆相同，具体实验结果对比表如下表1：
表1实验结果对比表
Figure PCTCN2019086564-appb-000001
如表1所示的，用本发明的方法制备的一种双面发电太阳能电池的光电转换效率相对于现有技术均有所提高。
本发明提供一种背面钝化太阳能电池的制备方法，包括以下步骤：
S1：选取156×156mm的P型硅，在硅片的正面形成绒面，选用湿法或者干法刻蚀技术，在P型硅片表面形成绒面，反射率控制在10～30％。
S2：在S1处理过得硅片正面进行磷扩散，形成N型发射极，该N型发射极可通过热扩散或者离子注入等方法形成，其中，所述硅片的扩散优选采用三氯氧磷，在扩散时需控制方块电阻在75～100ohm/sq。
S3：在S2的基础上设备去除扩散过程形成的磷硅玻璃，使用HF溶液去除所述N型发射极正面及所述P型硅片背面扩散过程中形成的磷硅玻璃层。
S4：采用PVECD设备首先在在硅片背面沉积8～12nm三氧化二铝或者二氧化硅，然后采用PVECD设备在三氧化二铝层或者二氧化硅层上沉积70～80nm氮化硅，最后形成背面钝化层。
需要说明的是，PECVD(Plasma Enhanced Chemical Vapor Deposition)是指等离子体增强化学气相沉积。PECVD是借助微波或射频等使含有薄膜组成原子的气体电离，在局部形成等离子体，而等离子体化学活性很强，很容易发生反应，在基片上沉积出所期望的薄膜。
S5：在所述硅片正面形成氮化硅减反射的钝化膜。
S6：在所述硅片背面采用丝网印刷或喷墨方式印刷无机刻蚀浆料，其中无机浆料平行印刷在背面钝化层上，烘干，其中无机刻蚀浆料在300～450℃下烧结过程中能刻蚀背面钝化层，并且该铝浆填充直条槽，形成连接全铝背电场和P型硅的局部铝背场。
S7：在所述硅片背面的开槽处印刷线性高导电铝浆，覆盖住刻蚀无机浆料，形成局部铝背场，烘干，在所述硅片背面印刷背电极银浆，烘干。
S8：将硅片进行730～770℃高温烧结，烧结过程中无机刻蚀浆料刻蚀背面钝化层，形成连接全铝背电场和P型硅的局部铝背场。
下面以具体实施例进一步阐述本发明：
实施例1
一直局部铝背场太阳能电池的制备方法如下：
S1：选取156×156mm的P型硅，在硅片的正面形成绒面，选用湿法或者干法刻蚀技术，在P型硅片表面形成绒面，反射率控制在20％。
S2：在S1处理过得硅片正面进行磷扩散，形成N型发射极，该N型发射极可通过热扩散或者离子注入等方法形成，其中，所述硅片的扩散优选采用三氯氧磷，在扩散时需控制方块电阻在90ohm/sq。
S3：在S2的基础上设备去除扩散过程形成的磷硅玻璃，使用HF溶液去除所述N型发射极正面及所述P型硅片背面扩散过程中形成的磷硅玻璃层。
S4：采用PVECD设备首先在在硅片背面沉积7nm三氧化二铝或者二氧化硅，然后采用PVECD设备在三氧化二铝层或者二氧化硅层上沉积85nm氮化硅，最后形成背面钝化层。
S5：在所述硅片正面形成氮化硅减反射的钝化膜。
S6：印刷背电极，在所述硅片背面采用丝网印刷或喷墨方式印刷无机刻蚀浆料，其中无机浆料平行印刷在背面钝化层上，烘干，其中无机刻蚀浆料在375℃下烧结过程中能刻蚀背面钝化层，并且该铝浆填充直条槽，形成连接全铝背电场和P型硅的局部铝背场。
S7：在所述硅片背面的开槽处印刷线性高导电铝浆，覆盖住无机刻蚀浆料，形成局部铝背场，烘干，在所述硅片背面印刷背电极银浆，烘干。
S8：将硅片进行750℃高温烧结，烧结过程中无机刻蚀浆料刻蚀背面钝化层，形成连接全铝背电场和P型硅的局部铝背场，得到一种双面发电太阳能电池。
实施例2
S1：选取156×156mm的P型硅，在硅片的正面形成绒面，选用湿法或者干法刻蚀技术，在P型硅片表面形成绒面，反射率控制在10％。
S2：在S1处理过得硅片正面进行磷扩散，形成N型发射极，该N型发射极可通过热扩散或者离子注入等方法形成，其中，所述硅片的扩散优选采用三氯氧磷，在扩散时需控制方块电阻在75ohm/sq。
S3：在S2的基础上设备去除扩散过程形成的磷硅玻璃，使用HF溶液去除所述N型发射极正面及所述P型硅片背面扩散过程中形成的磷硅玻璃层。
S4：采用PVECD设备首先在在硅片背面沉积8nm三氧化二铝或者二氧化硅，然后采用PVECD设备在三氧化二铝层或者二氧化硅层上沉积70nm氮化硅，最后形成背面钝化层。
S5：在所述硅片正面形成氮化硅减反射的钝化膜。
S6：印刷背电极，在所述硅片背面采用丝网印刷或喷墨方式印刷无机刻蚀浆料，其中无机浆料平行印刷在背面钝化层上，烘干，其中无机刻蚀浆料在300℃下烧结过程中能刻蚀背面钝化层，并且该铝浆填充直条槽，形成连接全铝背电场和P型硅的局部铝背场。
S7：在所述硅片背面的开槽处印刷线性高导电铝浆，覆盖住刻蚀无机浆料，形成局部铝背场，烘干，在所述硅片背面印刷背电极银浆，烘干。
S8：将硅片进行730℃高温烧结，烧结过程中无机刻蚀浆料刻蚀背面钝化层，形成连接全铝背电场和P型硅的局部铝背场，得到一种双面发电太阳能电池。
实施例3
S1：选取156×156mm的P型硅，在硅片的正面形成绒面，选用湿法或者干法刻蚀技术，在P型硅片表面形成绒面，反射率控制在30％。
S2：在S1处理过得硅片正面进行磷扩散，形成N型发射极，该N型发射极可通过热扩散或者离子注入等方法形成，其中，所述硅片的扩散优选采用三氯氧磷，在扩散时需控制方块电阻在75ohm/sq。
S3：在S2的基础上设备去除扩散过程形成的磷硅玻璃，使用HF溶液去除所述N型发射极正面及所述P型硅片背面扩散过程中形成的磷硅玻璃层。
S4：采用PVECD设备首先在在硅片背面沉积8nm三氧化二铝或者二氧化硅，然后采用PVECD设备在三氧化二铝层或者二氧化硅层上沉积70nm氮化硅，最后形成背面钝化层。
S5：在所述硅片正面形成氮化硅减反射的钝化膜。
S6：印刷背电极，在所述硅片背面采用丝网印刷或喷墨方式印刷无机刻蚀浆料，其中无机浆料平行印刷在背面钝化层上，烘干，其中无机刻蚀浆料在300℃下烧结过程中能刻蚀背面钝化层，并且该铝浆填充直条槽，形成连接全铝背电场和P型硅的局部铝背场。
S7：在所述硅片背面的开槽处印刷线性高导电铝浆，覆盖住刻蚀无机浆料，形成局部铝背场，烘干，在所述硅片背面印刷背电极银浆，烘干。
S8：将硅片进行770℃高温烧结，烧结过程中无机刻蚀浆料刻蚀背面钝化层，形成连接全铝背电场和P型硅的局部铝背场，得到一种双面发电太阳能电池。
最后所应当说明的是，以上实施例仅用以说明本发明的技术方案而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (9)

  1. 一种双面发电太阳能电池，包括硅基体(5)，从下而上依次设于硅基体(5)正面的N发射电极(6)、正面减反射钝化膜(7)和正面电极(3)，以及从上而下设于硅基体背面的背面钝化膜(1)、背电场和背电极(4)，其特征在于：所述太阳能电池为双面太阳能电池，所述背电场为局部铝背电场(2)，所述局部铝背电场(2)通过在背面钝化膜(1)上用无机刻蚀浆料刻蚀后呈线性开槽，然后在开槽处覆盖高导电铝浆，所述太阳能电池有2～5μm的BSF层。
  2. 根据权利要求1所述的双面发电太阳能电池，其特征在于：所述无机刻蚀浆料为无机非金属刻蚀浆料。
  3. 根据权利要求1所述的双面发电太阳能电池，其特征在于：所述局部铝背场(2)为一组平行排列的直条组，均匀分布在背面钝化膜1内，所述局部铝背电场(2)上的槽宽为10～25μm，所述局部铝背电场(2)上的刻蚀槽深为120～150nm，所述局部铝背电场(2)上相邻两个槽之间的距离为0.6～1mm。
  4. 根据权利要求1所述的双面发电太阳能电池，其特征在于：所述高导电铝浆的导电性为1×10 -6～2×10 -5Ω·cm，所述线性高导电铝浆的宽度为15～50μm，相邻两个线性高导电铝浆的间距为0.6～2mm。
  5. 根据权利要求1所述的双面发电太阳能电池，其特征在于：所述的硅基体(5)为p型晶体硅片，该P型硅是通过P型硅原料晶体成长的方法，形成晶棒后，切片形成。
  6. 一种根据权利要求1所述的双面发电太阳能电池的制备方法，其特征在于：包括以下制备步骤：
    S1选取硅片，制绒，清洗：选取156×156mm的P型硅，在硅片的正面形成绒面，选用湿法或者干法刻蚀技术，在P型硅片表面形成绒面，反射率控制在10～30％；
    S2磷扩散：在S1处理过得硅片正面进行磷扩散，形成N型发射极，该N型发射极可通过热扩散或者离子注入等方法形成，其中，所述硅片的扩散优选采用三氯氧磷，在扩散时需控制方块电阻在75～100ohm/sq；
    S3去背结：在S2的基础上设备去除扩散过程形成的磷硅玻璃，使用HF溶液去除所述N型发射极正面及所述P型硅片背面扩散过程中形成的磷硅玻璃层；
    S4沉积背面钝化膜：采用PVECD设备首先在在硅片背面沉积8～12nm三氧化二铝或者二氧化硅，然后采用PVECD设备在三氧化二铝层或者二氧化硅层上沉积70～80nm氮化硅，最后形成背面钝化层；
    S5沉积正面减反射钝化膜：在所述硅片正面形成氮化硅减反射的钝化膜；
    S6印刷背电极，在背面钝化膜上印刷无机刻蚀浆料进行刻蚀开槽：在所述硅片背面采用丝网印刷或喷墨方式印刷无机刻蚀浆料，其中无机浆料平行印刷在背面钝化层上，烘干，其中无机刻蚀浆料在300～450℃下烧结过程中能刻蚀背面钝化层，并且该铝浆填充直条槽，形成连接全铝背电场和P型硅的局部铝背场；
    S7在开槽处覆盖线性铝浆，印刷正面电极：在所述硅片背面的开槽处印刷线性高导电铝浆，覆盖住刻蚀无机浆料，形成局部铝背场，烘干，在所述硅片背面印刷背电极银浆，烘干；
    S8烧结后制成局部铝背场：将硅片进行高温烧结，烧结过程中无机刻蚀浆料刻蚀背面钝化层，形成连接全铝背电场和P型硅的局部铝背场。
  7. 根据权利要求6所述的双面发电太阳能电池的制备方法，其特征在于：所述步骤(4)的Al 2O 3或者SiO x膜厚为2～12nm，所述SiN x膜厚为70～100nm。
  8. 根据权利要求6所述的双面发电太阳能电池的制备方法，其特征在于：所述步骤(6)中无机刻蚀浆料刻蚀开槽的温度为200～450℃。
  9. 根据权利要求6所述的双面发电太阳能电池的制备方法，其特征在于：所述步骤(8)中铝浆烧结温度为730～770℃。
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