CN114420788A - 一种perc+se太阳能电池背膜优化工艺 - Google Patents
一种perc+se太阳能电池背膜优化工艺 Download PDFInfo
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Abstract
本发明公开了一种PERC+SE太阳能电池背膜优化工艺，包括以下步骤，将硅片清洗制绒、扩散制结、激光掺杂、前氧化+PSG、碱抛、后氧化、氧化铝层制备、背钝化膜制备、正面减反射膜层制备、背面激光开槽、正背面电极制备的工艺步骤制备，电池背面背钝化膜层包括氧化铝膜和氮化硅叠层膜，氮化硅叠层膜由上、中、下三层氮化硅膜组成，三层所述氮化硅膜的折射率由上至下逐渐升高。本发明的优化工艺能形成硅片基底高折射率，中、上层低折射率的混合膜结构，中、上层低折射率有助于光的吸收，基底高折射率有助于钝化效果，减少在基底处光的散失，可得到很好的钝化效果，从而提高单晶电池转换效率，有利于力高钝化效果。
Description
【技术领域】
本发明涉及太阳能电池制造技术领域，具体涉及一种PERC+SE 太阳能电池背膜优化工艺。
【背景技术】
PERC太阳能电池(PERC)结构最早于1989年由新南威尔士大 学研究提出，目前已高度量产的电池类型，此技术路线为制绒-扩散 -激光SE-刻蚀-热氧-背面氧化铝-正镀膜-背镀膜-丝网印刷，双面电 池背面光照也能发电，与单面电池相比，主要是背镀膜及丝印不同， 在背镀膜工序，主要是沉积SiNx薄膜，其目的是为了保护氧化铝， 钝化背面缺陷，减少光的反射；因此，在双面电池工艺路线中背镀 膜工序尤为重要。关于PERC双面电池目前产线背镀膜工艺，其膜 层效率较低、钝化效果较差，影响电池效率的同时也影响可靠性。 针对上述提出的问题，亟需设计出一种PERC+SE太阳能电池背膜 优化工艺。
【发明内容】
为解决上述问题，本发明的目的在于提供一种PERC+SE太阳 能电池背膜优化工艺，解决了现有清洗工艺容易较难将石墨舟表面 的氮化硅薄膜清洗干净，烘干时间较短，无法将石墨舟内水分完全 烘干，因整舟清洗导致饱和工艺时会将石墨卡点内部沉积上氮化 硅，影响了石墨舟正常使用时和电池片的导电性，镀膜色差较严重， 镀膜返工率较高的问题。
为实现上述目的，本发明提供如下技术方案：一种PERC+SE 太阳能电池背膜优化工艺，具体工艺按照：将硅片清洗制绒、扩散 制结、激光掺杂、前氧化+PSG、碱抛、后氧化、氧化铝层制备、背 钝化膜制备、正面减反射膜层制备、背面激光开槽、正背面电极制 备的工艺步骤制备；其中背钝化膜制备时，使用PECVD技术，采 用SiH4和NH3对硅片背面依次镀膜沉积的氧化铝膜和氮化硅叠层 膜，氮化硅叠层膜包含上、中、下三层氮化硅膜，三层所述氮化硅 膜的折射率由上至下逐渐升高，氮化硅叠层膜的总膜厚为 115-125nm，氮化硅膜叠层膜的总折射率为2.04-2.12。
优选的，所述硅片背表面沉积12nm-16nm氧化铝薄膜。
优选的，所述镀膜沉积温度为440～600℃。
优选的，所述镀膜沉积的时间为60～800s。
与现有技术相比，本发明具有如下有益效果：
本发明提供的PERC+SE太阳能电池背膜优化工艺，通过通入 相应的NH3和SiH4在硅片背面形成氮化硅叠层膜，形成硅片基底 高折射率，中、上层低折射率的混合膜结构，中、上层低折射率有 助于光的吸收，基底高折射率有助于钝化效果，减少在基底处光的 散失，可得到很好的钝化效果，从而提高单晶电池转换效率，镀膜 沉积温度440～600℃，有利于力高钝化效果。
【具体实施方式】
为使本领域技术人员更好地理解本发明的技术方案，下面对本 发明作进一步详细描述。
实施例1
一种PERC+SE太阳能电池背膜优化工艺如下：
将硅片清洗制绒、扩散制结、激光掺杂、前氧化+PSG、碱抛、 后氧化、氧化铝层制备、背钝化膜制备、正面减反射膜层制备、背 面激光开槽、正背面电极制备的工艺步骤制备；其中背钝化膜制备 时，使用PECVD技术，采用SiH4和NH3对硅片背面依次镀膜沉 积的氧化铝膜和氮化硅叠层膜，镀膜沉积温度为440～600℃，镀膜 沉积的时间为60～800s，氮化硅叠层膜包含上、中、下三层氮化硅 膜，三层所述氮化硅膜的折射率由上至下逐渐升高，硅片背表面沉 积12nm-16nm氧化铝薄膜，氮化硅叠层膜的总膜厚为115-125nm， 氮化硅膜叠层膜的总折射率为2.04-2.12。
实施例2，太阳能电池背膜优化工艺如下：
将硅片清洗制绒、扩散制结、激光掺杂、前氧化+PSG、碱抛、 后氧化、氧化铝层制备、背钝化膜制备、正面减反射膜层制备、背 面激光开槽、正背面电极制备的工艺步骤制备；其中背钝化膜制备 时，使用PECVD技术，对硅片背面依次镀膜沉积的氧化铝膜和氮 化硅薄膜，镀膜沉积温度为300～430℃，镀膜沉积的时间为60～ 800s，硅片背表面沉积8nm-12nm氧化铝薄膜，氮化硅薄膜的膜厚 为70-80nm，氮化硅薄膜的总折射率为2.12-2.20。
检测结果
实施例2与实施例1基本相同，不同之处在于实施例1中氮化 硅叠层膜的总膜厚为115-125nm，氮化硅膜叠层膜的总折射率为 2.04-2.12，通过通入相应的NH3和SiH4在硅片背面形成氮化硅叠 层膜，形成硅片基底高折射率，中、上层低折射率的混合膜结构， 中、上层低折射率有助于光的吸收，使而电池效率得到提升，钝化 作用的增强，修补了晶硅来料的缺陷，降低了硅片来料对电池性能 的影响，有利于短路电流的提升。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并 不受上述实施例的限制，其他的任何未背离本发明的精神实质与原 理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方 式，都包含在本发明的保护范围之内。
Claims (4)
1.一种PERC+SE太阳能电池背膜优化工艺，其特征在于，具体工艺按照：将硅片清洗制绒、扩散制结、激光掺杂、前氧化+PSG、碱抛、后氧化、氧化铝层制备、背钝化膜制备、正面减反射膜层制备、背面激光开槽、正背面电极制备的工艺步骤制备；其中背钝化膜制备时，使用PECVD技术，采用SiH4和NH3对硅片背面依次镀膜沉积的氧化铝膜和氮化硅叠层膜，氮化硅叠层膜包含上、中、下三层氮化硅膜，三层所述氮化硅膜的折射率由上至下逐渐升高，氮化硅叠层膜的总膜厚为115-125nm，氮化硅膜叠层膜的总折射率为2.04-2.12。
2.如权利要求1所述的一种PERC+SE太阳能电池背膜优化工艺，其特征在于：所述硅片背表面沉积12nm-16nm氧化铝薄膜。
3.如权利要求1所述的一种PERC+SE太阳能电池背膜优化工艺，其特征在于：所述镀膜沉积温度为440～600℃。
4.如权利要求1所述的一种PERC+SE太阳能电池背膜优化工艺，其特征在于：所述镀膜沉积的时间为60～800s。
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