CN101958364B - 一种背面钝化的太阳能电池的生产方法 - Google Patents
一种背面钝化的太阳能电池的生产方法 Download PDFInfo
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- CN101958364B CN101958364B CN2010101521756A CN201010152175A CN101958364B CN 101958364 B CN101958364 B CN 101958364B CN 2010101521756 A CN2010101521756 A CN 2010101521756A CN 201010152175 A CN201010152175 A CN 201010152175A CN 101958364 B CN101958364 B CN 101958364B
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- silicon chip
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- silicon dioxide
- solar cell
- hydrofluoric acid
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 46
- 239000010703 silicon Substances 0.000 claims description 46
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 24
- 239000002002 slurry Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 6
- 238000011056 performance test Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 4
- 238000009966 trimming Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 238000007688 edging Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
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CN2010101521756A CN101958364B (zh) | 2010-04-20 | 2010-04-20 | 一种背面钝化的太阳能电池的生产方法 |
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CN2010101521756A CN101958364B (zh) | 2010-04-20 | 2010-04-20 | 一种背面钝化的太阳能电池的生产方法 |
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CN101958364A CN101958364A (zh) | 2011-01-26 |
CN101958364B true CN101958364B (zh) | 2012-05-16 |
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CN2010101521756A Active CN101958364B (zh) | 2010-04-20 | 2010-04-20 | 一种背面钝化的太阳能电池的生产方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102779901A (zh) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | 一种背表面钝化晶体硅太阳能电池的制备工艺 |
CN102903793A (zh) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种选择性发射极电池片掩膜的制备方法 |
CN111540676B (zh) * | 2020-05-11 | 2024-02-23 | 西安奕斯伟材料科技股份有限公司 | 一种硅片边缘剥离方法及硅片 |
CN115274936A (zh) * | 2022-08-29 | 2022-11-01 | 通威太阳能(金堂)有限公司 | 太阳电池及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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NL1030200C2 (nl) * | 2005-10-14 | 2007-04-17 | Stichting Energie | Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen. |
CN101101936A (zh) * | 2007-07-10 | 2008-01-09 | 中电电气(南京)光伏有限公司 | 选择性发射结晶体硅太阳电池的制备方法 |
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Inventor after: Deng Weiwei Inventor after: Liu Yafeng Inventor after: Gao Jifan Inventor before: Deng Weiwei Inventor before: Liu Yafeng |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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CP03 | Change of name, title or address |