CN103531265B - 晶体硅太阳能电池背场局域接触铝浆及其制备方法 - Google Patents
晶体硅太阳能电池背场局域接触铝浆及其制备方法 Download PDFInfo
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- CN103531265B CN103531265B CN201310489103.4A CN201310489103A CN103531265B CN 103531265 B CN103531265 B CN 103531265B CN 201310489103 A CN201310489103 A CN 201310489103A CN 103531265 B CN103531265 B CN 103531265B
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000002002 slurry Substances 0.000 title abstract description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000843 powder Substances 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 14
- 239000003960 organic solvent Substances 0.000 claims abstract description 12
- 238000000227 grinding Methods 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 239000004411 aluminium Substances 0.000 claims description 30
- 239000011230 binding agent Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 239000000428 dust Substances 0.000 claims description 17
- 229910000632 Alusil Inorganic materials 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 239000006185 dispersion Substances 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 229910018134 Al-Mg Inorganic materials 0.000 claims description 4
- 229910018467 Al—Mg Inorganic materials 0.000 claims description 4
- 229910000521 B alloy Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 claims description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 150000001398 aluminium Chemical class 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229940067606 lecithin Drugs 0.000 claims description 2
- 235000010445 lecithin Nutrition 0.000 claims description 2
- 239000000787 lecithin Substances 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical group CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 8
- 238000002156 mixing Methods 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 6
- 230000000149 penetrating effect Effects 0.000 abstract description 4
- 238000005303 weighing Methods 0.000 abstract description 2
- 239000007767 bonding agent Substances 0.000 abstract 1
- 238000009924 canning Methods 0.000 abstract 1
- 238000011160 research Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- -1 10 parts Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
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CN201310489103.4A CN103531265B (zh) | 2013-10-18 | 2013-10-18 | 晶体硅太阳能电池背场局域接触铝浆及其制备方法 |
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CN201310489103.4A CN103531265B (zh) | 2013-10-18 | 2013-10-18 | 晶体硅太阳能电池背场局域接触铝浆及其制备方法 |
Publications (2)
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CN103531265A CN103531265A (zh) | 2014-01-22 |
CN103531265B true CN103531265B (zh) | 2014-12-03 |
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Families Citing this family (8)
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JP5957546B2 (ja) * | 2015-01-07 | 2016-07-27 | 株式会社ノリタケカンパニーリミテド | 導電性組成物 |
CN105489266A (zh) * | 2015-12-17 | 2016-04-13 | 武汉波信科技有限公司 | 一种晶硅太阳能电池的无铅导电浆料的组成及制备方法 |
CN106098146A (zh) * | 2016-07-08 | 2016-11-09 | 南通天盛新能源股份有限公司 | 高效晶体硅太阳能电池局域背场铝浆及在perc电池中的应用 |
CN106601330B (zh) * | 2016-08-30 | 2018-02-23 | 南通天盛新能源股份有限公司 | 高填充率perc电池局域接触背场铝浆及其制备方法与应用 |
CN106784049B (zh) * | 2016-12-30 | 2019-12-10 | 苏州阿特斯阳光电力科技有限公司 | 一种局部掺杂晶体硅太阳能电池的制备方法及其制得的电池 |
CN107342116A (zh) * | 2017-09-01 | 2017-11-10 | 苏州金瑞晨科技有限公司 | 一种太阳能电池用铝浆及其应用 |
CN110350039A (zh) * | 2019-04-29 | 2019-10-18 | 南通天盛新能源股份有限公司 | 一种双面发电太阳能电池及其制备方法 |
CN114883026B (zh) * | 2022-01-18 | 2024-02-02 | 湖南利德电子浆料股份有限公司 | 一种双面背钝化晶硅太阳能电池专用铝浆及其制备方法 |
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CN101345263B (zh) * | 2008-09-09 | 2010-06-16 | 季福根 | 太阳能硅光电池用无铅电子浆料组成及制备方法 |
CN102368411B (zh) * | 2011-10-26 | 2012-12-26 | 南昌大学 | 一种铝硼合金粉及晶体硅太阳能电池铝硼浆的制备方法 |
CN103106947A (zh) * | 2011-11-15 | 2013-05-15 | 南通绿力光电材料有限公司 | 一种高性能太阳能铝浆 |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NANTONG TIANSHENG NEW ENERGY TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: NANTONG T-SUN PHOTOVOLTAIC TECHNOLOGY CO., LTD. Effective date: 20140124 |
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Effective date of registration: 20140124 Address after: 226010 Jiangsu Province, Nantong City Hongxing Nantong economic and Technological Development Zone, Road No. 96 Applicant after: T-SUN TECHNOLOGICAL Co.,Ltd. Address before: 226010 Huaxing Road, Nantong economic and Technological Development Zone, Jiangsu 2, China Applicant before: Nantong Tiansheng Photovoltaic Technology Co.,Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Crystal silicon solar battery back field local contact aluminium paste and preparation method thereof Effective date of registration: 20151209 Granted publication date: 20141203 Pledgee: Nantong science and technology innovation Company limited by guarantee Pledgor: T-SUN TECHNOLOGICAL Co.,Ltd. Registration number: 2015990001105 |
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C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Jiangsu province Nantong City Development Zone 226000 new Zhen Xing Fu Lu 67-7 No. 4 buildings Patentee after: NANTONG T-SUN NEW ENERGY Co.,Ltd. Address before: 226010 Jiangsu Province, Nantong City Hongxing Nantong economic and Technological Development Zone, Road No. 96 Patentee before: T-SUN TECHNOLOGICAL Co.,Ltd. |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: No.28, Jiqing Road, Nantong Economic and Technological Development Zone, Jiangsu Province, 226000 Patentee after: NANTONG T-SUN NEW ENERGY Co.,Ltd. Address before: Building 4, no.67-7, Xingfu Road, Xinkai Town, development zone, Nantong City, Jiangsu Province, 226000 Patentee before: NANTONG T-SUN NEW ENERGY Co.,Ltd. |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
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Date of cancellation: 20230217 Granted publication date: 20141203 Pledgee: Nantong science and technology innovation Company limited by guarantee Pledgor: T-SUN TECHNOLOGICAL Co.,Ltd. Registration number: 2015990001105 |