CN1009823B - 陶瓷与陶瓷或陶瓷与金属的粘结方法 - Google Patents

陶瓷与陶瓷或陶瓷与金属的粘结方法

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CN1009823B
CN1009823B CN86102112A CN86102112A CN1009823B CN 1009823 B CN1009823 B CN 1009823B CN 86102112 A CN86102112 A CN 86102112A CN 86102112 A CN86102112 A CN 86102112A CN 1009823 B CN1009823 B CN 1009823B
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alloy
aluminum
metal
temperature
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山田俊宏
河野显臣
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Hitachi Ltd
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Abstract

将包括铝或铝合金芯片和铝-硅合金表面层的三层复合板或叠层板，插接于两陶瓷粘结面或陶瓷与金属粘结面之间。在将所得的结构件保持在低于铝或铝合金的熔点高于铝-硅合金固线温度的粘结温度下，同时对插接材料进行加压，用这样的方法使陶瓷与陶瓷或陶瓷与金属相粘结。

Description

本发明涉及到陶瓷与陶瓷或陶瓷与金属的粘结方法。特别是涉及到适用于机器的一些构件，电子原件或类似部件的粘结方法。
英国专利No761045公开了一种氧化铝与金属的粘结方法。该方法包括：使铜氧化，将已氧化的钢（氧化亚铜：Cu2O）置于陶瓷基质上，在高于铜的熔点（1083℃）并低于氧化铜的熔点（1230℃）的温度下，加热氧化亚铜与陶瓷两者（使在铜上形成氧化铜），然后使氧化铜和液态铜组成的低共熔晶体与基质反应，由此使氧化铝与金属粘结。
上述方法需要将待粘结件加热到高于1083℃低于1230℃的高温，当冷却已粘合的部件时，由于氧化铝与金属的热膨胀系数不同，而产生热应力。因此，氧化铝往往会开裂，导致强度可靠性的降低。更严重的是，金属被加热时发生变形。美国专利No4037027公开的方法，其特征在于在较低温度下加热待粘结件，在这样的温度下插接料不会熔化，并使待粘结件紧紧压合，即固相粘结法。根据这种方法，由于加热温度低，不会产生大的热应力。但是，由于此插接料不被熔化，并在该插接料表面形成氧化层，因此插接料与粘结件之间反应缓慢，从而在短时间内很难获得高的粘结强度。并且需要很高的压力才能使粘结表面紧密结合在一起。
本发明的目的在于提供一种陶瓷与陶瓷或陶瓷与金属的粘结方法，其特征在于降低结合温度以抑制在冷却粘结件时热应力的产生。因此根据本发明的方法，陶瓷几乎不发生开裂，从而提高了强度的可靠性。
本发明的另一个目的在于提供一种陶瓷与金属的粘结方法，其特征在于此时的粘结是在低温低粘结压力下进行，因而减少了金属的热变形，因此能获得高尺寸精度的产品。
为达到上述目的，本发明方法包括：放置一种作为插接料的薄板件于陶瓷粘结件之间或陶瓷粘结件与金属粘结件之间，其中薄板件包括由铝或铝合金制成的芯片以及由铝-硅合金制成的表面层，粘结是在高于铝-硅合金的固线温度并低于铝或铝合金熔点的温度下进行（在此温度下，铝-硅合金被熔化而铝和铝合金都不会熔化），同时压紧此插接料。粘结操作最好是在真空或惰性气氛中进行。铝或铝合金的熔点最高为660℃。因此，即使在高于其熔点的温度下进行粘结，在冷却过程中，也只在其熔点到室温的温度范围内会产生热应力，从而温度降低不大。另外，铝或铝合金具有非常低的屈服点。因此，在冷却过程中产生的热应力将由于铝或铝合金的屈服而松驰。由于这些原因，显著地抑制了陶瓷中热应力的产生，这样就防止了在先有技术中经常出现的那种陶瓷断裂现象。
按照本发明粘结的陶瓷实例包括：氮化硅（Si3N4）、硅铝氧氮（Sialon）、二氧化硅（SiO2）、氧化铝（Al2O3）、玻璃、铁氧体（Mn-Zn铁氧体）、氧化锆（ZrO2）、钛酸钡（BaTiO3）和钛酸钙（CaTiO3）。本发明的方法与先有技术相比，具有很宽的实用范围。
图1为一个示意图，表明按本发明的方法将两个陶瓷轴相互粘结或将一陶瓷轴与一金属轴粘结的实例。
图2为一个示意图，表明按本发明的方法将两个陶瓷块相互粘结的实例。
图3为一个示意图，表明按本发明的方法将两个陶瓷块相互粘结的实例。
实例1
硅铝氧氮与Cr-Mo钢的粘结
如图1所示，三层复合板3（0.6毫米厚）包括用铝合金（Al-1%Mn合金）制的0.5毫米厚的芯片4，以及用Al-Si-Mg合金（Al-10%Si-2%Mg）制的0.05毫米厚的两表面层5，插接于用硅铝氧氮制的轴1（直径为10毫米）和用Cr-Mo 钢制的轴2（直径为10毫米）之间。把所得到结构件保持在600℃的粘结温度，10-4托的真空条件以及1.0千克·力/平方毫米的粘结压力下15分钟，使两根轴粘合。上述Al-Si-Mg合金的熔点约为585℃。因此，只有复合板3的两表面层5在600℃的粘结温度下熔化，通过复合板3的冶金化，从而铝和硅与硅铝氧氮和铁反应，从而使硅铝氧氮轴1与Cr-Mo钢轴2完全结合。镁提高了Al-Si合金熔体对硅铝氧氮和铁的润湿能力。
在以上实例中，所结合的轴1和轴2的粘结强度（四点弯曲试验）约为10千克·力/平方毫米，并且断裂位置在轴2与复合板3之间的粘合面处。确切地说，Al与Fe的金属互化物较脆，从而引起这一部位发生断裂。因此，为了进一步提高粘结强度，最好把热膨胀率低的材料插接于轴2与复合板3之间。
如果粘结操作在620℃或更高的温度下进行，Fe与Al反应形成的金属互化物（Fe3Al，Fe2Al5）将会厚一些，因而降低粘结强度。因此，粘结温度必须低于620℃。
另一方面，当粘结压力减小到0.1千克·力/平方毫米或增加到2千克/平方毫米时，并没有观察到粘结强度降低。
实例2
Si3N4与Cr-Mo钢的粘结
根据实例1中所述的同样步骤，进行了Si3N4制的轴与Cr-Mo钢制的轴的粘结。所得到的粘结强度约为8千克·力/平方毫米。
实例3
Si3N4与SiC的粘结
根据实例1中所述的同样步骤，将包括铝合金制的芯片和Al-Si-Mg合金制的两表面层的三层复合板，插接于Si3N4制的轴和SiC制的轴之间。将所得到的结构件在600℃的粘结温度，10-4托的真空条件，以及1.0千克·力/平方毫米的粘结压力下保持15分钟，使两轴结合。在粘合区域内没有观察到裂纹，粘合强度为14千克·/平方毫米。
实例4
BaTiO3与铁氧体（Mn-Zn铁氧体）的粘结
如图2所示，将Mn-Zn铁氧体8（0.5毫米厚，6毫米宽，4毫米高）置于BaTiO3制的板件6（0.7毫米厚，6毫米宽，4毫米高）和BaTiO3制成的块件7（3毫米厚，6毫米宽，4毫米高）之间，同时将与实例1中所用同样的三层复合板9镶入板件6和铁氧体8以及块件7和铁氧体8之间，此复合板9包括用铝合金制的芯片和用Al-Si-Mg合金制的两表面层。将所得到的结构件保持在600℃的粘结温度，10-4托真空条件下，以0.01千克·力/平方毫米的粘结压力进行粘结操作。板件6，块件7和铁氧体8都未发生变形。用肉眼和X-射线观察结合区域，以及块6，7和8时，未观察到有裂纹类缺陷。
此外，用钛酸钙（CaTiO3），代替钛酸钡（BaTiO3）重复进行上述步骤。获得了类似的结果。
实例5
玻璃与Al2O3的粘结
如图3所示，将与实例1中所用同样的三层复合板11，该板包括铝合金芯片和Al-Si-Mg合金表面层，插接于市售玻璃板9（2毫米厚，10毫米宽，10毫米长）和Al2O5圆环10（5毫米高，外径10毫米，内径8毫米）之间。将所得的结构件保持在600℃的粘结温度，10-4托真空条件下，以0.05千克·力/平方毫米的粘结压力进行粘结操作。对所获得的粘结构件进行氮气检漏试验表明，已达到了10-8托·托/秒或更低的气密度。
实例6
SiC与Al的粘结
用实例1中所述的类似方法，将包括铝合金芯片和两层Al-Si（10）-Mg（2）合金的表面层的三层复合板插接于SiC制的轴和Al制的轴之间。将所得的结构件保持在585℃的粘结温度，10-4托真空条件下以0.1千克·力/平方毫米的粘结压力进行粘结操作。该结构的粘合强度为4千克·力/平方毫米。未观察到铝轴变形。

Claims (2)

1、一种粘结陶瓷或陶瓷与金属的方法，其中的陶瓷为SiC，Si3N4和SiAlON，该方法是在两陶瓷粘结面之间或陶瓷粘结面与金属粘结面之间插入插接料，然后进行加热，其特征在于用作上述插接料的是一种三层复合板，该板包括纯铝或含锰铝合金制的芯片和含硅和镁的铝合金表面层，以及这种粘结是在高于含硅和镁的铝合金的固线温度，而低于含硅和镁的铝合金的熔点的温度下进行，同时对插接进行加压。
2、如权利要求1所述的方法，其中所说的含锰铝合金为Al-1%Mn合金，以及所说的含硅和镁的铝合金为Al-10%Si-2%Mg合金。
CN86102112A 1985-04-01 1986-03-31 陶瓷与陶瓷或陶瓷与金属的粘结方法 Expired CN1009823B (zh)

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CN103880462B (zh) * 2012-12-21 2015-08-19 中国科学院上海硅酸盐研究所 氧化锆陶瓷的低温粘结方法
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