CN100590851C - Cmos器件应力膜的形成方法 - Google Patents
Cmos器件应力膜的形成方法 Download PDFInfo
- Publication number
- CN100590851C CN100590851C CN200710042129A CN200710042129A CN100590851C CN 100590851 C CN100590851 C CN 100590851C CN 200710042129 A CN200710042129 A CN 200710042129A CN 200710042129 A CN200710042129 A CN 200710042129A CN 100590851 C CN100590851 C CN 100590851C
- Authority
- CN
- China
- Prior art keywords
- rete
- tension stress
- cmos device
- pmos transistor
- formation method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200710042129A CN100590851C (zh) | 2007-06-18 | 2007-06-18 | Cmos器件应力膜的形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200710042129A CN100590851C (zh) | 2007-06-18 | 2007-06-18 | Cmos器件应力膜的形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101330052A CN101330052A (zh) | 2008-12-24 |
CN100590851C true CN100590851C (zh) | 2010-02-17 |
Family
ID=40205766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710042129A Expired - Fee Related CN100590851C (zh) | 2007-06-18 | 2007-06-18 | Cmos器件应力膜的形成方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100590851C (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102117773B (zh) * | 2010-01-04 | 2013-11-27 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件和使用应力记忆技术工艺制造半导体器件的方法 |
CN102194753B (zh) * | 2010-03-15 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 用于制作半导体器件的应力层的刻蚀方法 |
CN102738082B (zh) * | 2011-04-01 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103247649A (zh) * | 2013-05-07 | 2013-08-14 | 上海华力微电子有限公司 | 减小图像传感器电学互扰的方法 |
CN104900516B (zh) * | 2015-06-29 | 2018-01-26 | 上海华力微电子有限公司 | 一种镍硅化物的形成方法 |
CN116053213B (zh) * | 2023-03-07 | 2023-06-30 | 合肥晶合集成电路股份有限公司 | 半导体器件的制备方法 |
-
2007
- 2007-06-18 CN CN200710042129A patent/CN100590851C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101330052A (zh) | 2008-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100530598C (zh) | 半导体结构的形成方法 | |
US9034706B2 (en) | FinFETs with regrown source/drain and methods for forming the same | |
CN100590851C (zh) | Cmos器件应力膜的形成方法 | |
CN101160664B (zh) | 压缩SiGe<110>生长的MOSFET器件及其制造方法 | |
JP5315922B2 (ja) | 半導体装置の製造方法 | |
CN101276746B (zh) | 表面处理方法、蚀刻处理方法及电子装置的制造方法 | |
US7670934B1 (en) | Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regions | |
CN102569195B (zh) | 利用均匀氧化物层形成于晶体管中的嵌埋σ形半导体合金 | |
US7358547B2 (en) | Selective deposition to improve selectivity and structures formed thereby | |
US8450167B2 (en) | Method of fabricating semiconductor devices | |
CN101593702B (zh) | 应变金属氧化物半导体器件的制造方法 | |
CN101393862B (zh) | 栅极侧壁层的制造方法及半导体器件的制造方法 | |
US8329547B2 (en) | Semiconductor process for etching a recess into a substrate by using an etchant that contains hydrogen peroxide | |
CN101288180A (zh) | 半导体结构的形成方法 | |
CN104616979A (zh) | 半导体器件的形成方法 | |
CN105514158A (zh) | 半导体结构和测试结构的形成方法、测试方法 | |
CN102347237B (zh) | 用于制造包含应力层的半导体器件结构的方法 | |
CN102082126B (zh) | 用于制造半导体器件的方法 | |
US20220102145A1 (en) | Method for forming recess and filling epitaxial layer in situ | |
US20110309452A1 (en) | Methods of manufacturing semiconductor devices | |
CN104752348A (zh) | 半导体器件的形成方法 | |
US9224657B2 (en) | Hard mask for source/drain epitaxy control | |
CN103794503A (zh) | Mos晶体管的制作方法 | |
CN102931072A (zh) | 双应力薄膜的制造方法以及半导体器件 | |
CN104701166B (zh) | 半导体器件的形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111117 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100217 Termination date: 20190618 |