CN100585901C - 有机薄膜晶体管及其制造方法和平板显示器件 - Google Patents
有机薄膜晶体管及其制造方法和平板显示器件 Download PDFInfo
- Publication number
- CN100585901C CN100585901C CN200510003495A CN200510003495A CN100585901C CN 100585901 C CN100585901 C CN 100585901C CN 200510003495 A CN200510003495 A CN 200510003495A CN 200510003495 A CN200510003495 A CN 200510003495A CN 100585901 C CN100585901 C CN 100585901C
- Authority
- CN
- China
- Prior art keywords
- layer
- charge carrier
- otft
- drain electrode
- organic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 title abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 27
- 239000002800 charge carrier Substances 0.000 claims description 170
- 239000000463 material Substances 0.000 claims description 62
- 239000005871 repellent Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 42
- 238000009413 insulation Methods 0.000 claims description 34
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 30
- 230000002209 hydrophobic effect Effects 0.000 claims description 26
- 239000002322 conducting polymer Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 17
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 230000003750 conditioning effect Effects 0.000 claims description 16
- 229930192474 thiophene Natural products 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- -1 aphthacene Chemical compound 0.000 claims description 13
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 12
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 10
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 claims description 10
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 9
- 229920000123 polythiophene Polymers 0.000 claims description 9
- 229920000767 polyaniline Polymers 0.000 claims description 8
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 claims description 6
- WSRHMJYUEZHUCM-UHFFFAOYSA-N perylene-1,2,3,4-tetracarboxylic acid Chemical compound C=12C3=CC=CC2=CC=CC=1C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C2=C1C3=CC=C2C(=O)O WSRHMJYUEZHUCM-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000005046 Chlorosilane Substances 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 5
- 238000007598 dipping method Methods 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 238000006884 silylation reaction Methods 0.000 claims description 5
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 4
- HZBAVWLZSLOCFR-UHFFFAOYSA-N oxosilane Chemical compound [SiH2]=O HZBAVWLZSLOCFR-UHFFFAOYSA-N 0.000 claims description 4
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 claims description 4
- QUTGXAIWZAMYEM-UHFFFAOYSA-N 2-cyclopentyloxyethanamine Chemical compound NCCOC1CCCC1 QUTGXAIWZAMYEM-UHFFFAOYSA-N 0.000 claims description 3
- 229920003026 Acene Polymers 0.000 claims description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 150000008064 anhydrides Chemical class 0.000 claims description 3
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 claims description 3
- 229910000071 diazene Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 claims description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 3
- UGQZLDXDWSPAOM-UHFFFAOYSA-N pyrrolo[3,4-f]isoindole-1,3,5,7-tetrone Chemical compound C1=C2C(=O)NC(=O)C2=CC2=C1C(=O)NC2=O UGQZLDXDWSPAOM-UHFFFAOYSA-N 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 376
- 230000000052 comparative effect Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000011368 organic material Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 229910016048 MoW Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920008347 Cellulose acetate propionate Polymers 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR96210/04 | 2004-11-23 | ||
| KR1020040096210A KR100667935B1 (ko) | 2004-11-23 | 2004-11-23 | 유기 박막 트랜지스터, 그 제조방법 및 유기 박막트랜지스터를 구비한 평판 표시 장치 |
| KR100278/05 | 2005-10-24 | ||
| KR104925/05 | 2005-11-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1825650A CN1825650A (zh) | 2006-08-30 |
| CN100585901C true CN100585901C (zh) | 2010-01-27 |
Family
ID=36936169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200510003495A Expired - Fee Related CN100585901C (zh) | 2004-11-23 | 2005-11-23 | 有机薄膜晶体管及其制造方法和平板显示器件 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100667935B1 (ko) |
| CN (1) | CN100585901C (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100741102B1 (ko) * | 2005-12-22 | 2007-07-20 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터의 제조 방법, 유기 박막 트랜지스터및 이를 구비한 평판 표시 장치 |
| KR100855449B1 (ko) * | 2007-03-29 | 2008-09-01 | 성균관대학교산학협력단 | 다기능 유기 삽입층을 적용한 플렉시블 유기 반도체 소자제조 방법 |
| KR101338021B1 (ko) * | 2007-04-04 | 2013-12-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 유기 발광 표시 장치 및그 제조 방법 |
| FR2918797B1 (fr) * | 2007-07-13 | 2009-11-06 | Sofileta Sa | Transistor organique a effet de champ et procede de fabrication de ce transistor |
| CN102054768B (zh) * | 2009-10-29 | 2013-05-01 | 深圳华映显示科技有限公司 | 像素结构的制作方法及接触窗开口的制作方法 |
| KR101088056B1 (ko) | 2010-02-05 | 2011-11-29 | 연세대학교 산학협력단 | 유기 전계 효과 트랜지스터 및 그 제조방법 |
| TWI463669B (zh) * | 2010-07-07 | 2014-12-01 | Sony Corp | 薄膜電晶體，製造薄膜電晶體的方法，顯示裝置及電子設備 |
| JP2012049225A (ja) * | 2010-08-25 | 2012-03-08 | Sony Corp | 電子デバイス及びその製造方法、並びに、半導体装置及びその製造方法 |
| JP5924342B2 (ja) * | 2011-08-15 | 2016-05-25 | 株式会社ニコン | トランジスタの製造方法 |
| CN107958938B (zh) * | 2017-11-07 | 2020-07-03 | 深圳市华星光电半导体显示技术有限公司 | 一种薄膜晶体管及显示装置 |
| US10431689B2 (en) | 2017-11-07 | 2019-10-01 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin film transistor and display device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5109223B2 (ja) * | 2004-08-04 | 2012-12-26 | ソニー株式会社 | 電界効果型トランジスタ |
| KR100662787B1 (ko) * | 2004-08-30 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 유기 박막트랜지스터와 그 제조방법, 및 이를 이용한 액정표시소자의 제조방법 |
| KR100685419B1 (ko) * | 2004-11-17 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계발광표시소자 및 그 제조방법 |
| KR100647660B1 (ko) * | 2004-11-19 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 채용한 평판표시장치 |
-
2004
- 2004-11-23 KR KR1020040096210A patent/KR100667935B1/ko not_active IP Right Cessation
-
2005
- 2005-11-23 CN CN200510003495A patent/CN100585901C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1825650A (zh) | 2006-08-30 |
| KR20060057141A (ko) | 2006-05-26 |
| KR100667935B1 (ko) | 2007-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100585901C (zh) | 有机薄膜晶体管及其制造方法和平板显示器件 | |
| JP5025943B2 (ja) | 有機薄膜トランジスタ、その製造方法、及びその有機薄膜トランジスタを含む平板表示装置 | |
| CN101383374B (zh) | 有机发光显示装置 | |
| CN1979912B (zh) | 有机薄膜晶体管和具有该有机薄膜晶体管的平板显示设备 | |
| JP4224038B2 (ja) | 薄膜トランジスタ，その製造方法及び該薄膜トランジスタを備える平板ディスプレイ装置 | |
| KR100647683B1 (ko) | 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 | |
| CN1996637B (zh) | 有机薄膜晶体管及包含其的有机发光显示装置 | |
| US7170088B2 (en) | Organic thin film transistor and flat panel display comprising the same | |
| KR100659103B1 (ko) | 유기 박막 트랜지스터, 이를 구비한 평판 디스플레이 장치및 유기 박막 트랜지스터의 제조방법 | |
| JP4455517B2 (ja) | 薄膜トランジスタの製造方法 | |
| US7993958B2 (en) | Organic thin film transistor array panel and manufacturing method thereof | |
| CN103579286A (zh) | 有机发光显示设备和制造有机发光显示设备的方法 | |
| CN101924140B (zh) | 薄膜晶体管及包括薄膜晶体管的平板显示器 | |
| KR100626082B1 (ko) | 평판표시장치 | |
| KR100670379B1 (ko) | 유기 박막 트랜지스터, 그 제조방법 및 이를 구비한 유기발광 디스플레이 장치 | |
| KR100647704B1 (ko) | 유기 박막 트랜지스터, 이를 구비한 평판 디스플레이 장치,유기 박막 트랜지스터의 제조방법 및 평판 디스플레이장치의 제조방법 | |
| US20080048184A1 (en) | Method of forming contact for organic active layer, method of manufacturing flat panel display, organic thin film transistor display, and organic light emitting diode display | |
| KR100670354B1 (ko) | 유기 박막 트랜지스터의 제조방법, 이에 의해 제조된 유기박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 | |
| KR100670355B1 (ko) | 트랜지스터, 이의 제조방법 및 이를 구비한 평판디스플레이 장치 | |
| KR20070080705A (ko) | 박막 트랜지스터의 제조방법, 이 방법에 의해 제조된 박막트랜지스터 및 이 박막 트랜지스터를 구비한 표시 장치 | |
| KR100696536B1 (ko) | 유기 박막 트랜지스터 및 이를 구비한 유기 발광디스플레이 장치 | |
| KR100751382B1 (ko) | 유기 박막 트랜지스터 및 이를 구비한 유기 전계 발광디스플레이 장치 | |
| KR100669328B1 (ko) | 유기 박막 트랜지스터, 그 제조방법 및 유기 박막트랜지스터를 구비한 평판 표시 장치 | |
| KR100670353B1 (ko) | 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 | |
| KR20050116702A (ko) | 박막 트랜지스터, 이를 제조한 방법 및 이를 구비하는평판 디스플레이 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121017 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20121017 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100127 Termination date: 20201123 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |