CN100573011C - Annealing device - Google Patents
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- CN100573011C CN100573011C CNB2005100807280A CN200510080728A CN100573011C CN 100573011 C CN100573011 C CN 100573011C CN B2005100807280 A CNB2005100807280 A CN B2005100807280A CN 200510080728 A CN200510080728 A CN 200510080728A CN 100573011 C CN100573011 C CN 100573011C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Abstract
The purpose of this invention is to provide a kind of simple in structure, can suppress to make the heat treatment that is accompanied by substrate and the annealing device of the generation of the generation gas cooled that produces and the so-called sublimate that produces.Annealing device (1) comprises having and is used for supplying with the thermal chamber (12) that heat-treat substrate the air adjustment part (11) and being used for of the warm-air supply parts (14) of hot blast to processing substrate portion (5).Annealing device (1) disposes catalysis wall (40), the catalyst of the oxidation Decomposition of the generation gas that is produced when being carried with promotion in the downstream of thermal chamber (a 12) side, when treatment substrate.Therefore, annealing device (1) is extremely low because of the generation that cooling generates the so-called sublimate that gas produces.In addition, owing to can produce reaction heat when generating the gas cyaniding decomposition, annealing device (1) heats only need power consumption seldom of mist when heat treatment.
Description
Technical field
The present invention relates to the annealing device of heating objects such as substrate being heat-treated by hot blast.
Background technology
In the past, the annealing device that in following patent documentation 1, is disclosed, be applied to LCD (LCD:Liquid Crystal Display) or plasma scope (PDP:PlasmaDisplay), in the making of flat screen displays such as OLED display (FPD:Flat Panel Display).Annealing device is in advance substrates such as glass plate (heating object) to be applied specific solution, accommodates the substrate of heat drying in heating clamber, is exposed to the device of heat-treating (burning till) in the hot blast that imports to the predetermined temperature in the heating clamber.
Patent documentation 1:(Japan Patent) No. 2971771 communique of special permission
Summary of the invention
The annealing device of prior art has and is used to make opening that heating object comes in and goes out or gap etc., and it is not an airtight state fully, therefore, is easy to form lower temperature near above-mentioned opening or gap.Therefore, be accompanied by heat treated carrying out and make vaporization such as the particular solution that is coated on the substrate and the generation gas that produces, near opening or gap, be cooled and solidify, form so-called sublimate.Sublimate is particle shape or tarry, the quality that it not only pollutes the inside of annealing device and reduces heating object, but also exist when heating object is come in and gone out and the problem of the external leaks of heat treated device.
Usually, annealing device is set in higher clean room of cleanliness factor etc.Therefore, as the annealing device of prior art, if sublimate leaks from annealing device, what for to the problem that also has the cleanliness factor that reduces clean room.
In view of the above-mentioned problems, disclosed annealing device is such formation in above-mentioned patent documentation 1: promptly, by making the atmosphere pressures that is provided with that maintains in the annealing device than annealing device hang down the low pressure of some, prevent the air in the annealing device or generate gas to external leaks.Making under the situation of this structure, though the problem that so-called sublimate is discharged to the outside from annealing device has certain effect, yet, because the influence of leaked-in air from being used to make opening that heating object comes in and goes out or gap, so all there is the possibility that produces sublimate in what.
In addition, in above-mentioned patent documentation 1, in the disclosed annealing device,, produce the uneven temperature possibility in the heating clamber and exist in because be subjected to the interior air influence of inflow device.Therefore, for disclosed annealing device in above-mentioned patent documentation 1, near the opening that is used for heating object discrepancy, have to be provided in addition to attract to capture from heating clamber one side will to the generation gas of external leaks and from the outside to the mechanism of the air of heating clamber one side inflow, thereby have the problem of the structure complicated that makes device.
Therefore, the object of the present invention is to provide a kind of relatively simple for structure, and the generation gas that heat treatment produced that can suppress to be accompanied by substrate be cooled and produce the annealing device of so-called sublimate.
Therefore, the present invention who is used to address the above problem who provides, it is characterized in that: the heating clamber that comprises the warm-air supply parts of supplying with hot blast and import the hot blast that in these warm-air supply parts, produces and come by this hot blast heating object is heated, in the generation gas flow area that produces in the heating that is accompanied by heating object, dispose the generation gas Knock-Down Component that described generation gas cyaniding is decomposed.
In annealing device of the present invention, by the hot blast of supplying with to heating clamber from the warm-air supply parts heating object is heated the major part that produces and generate gas, oxidized decomposition in generating the gas Knock-Down Component.Therefore, in annealing device of the present invention, be the decomposition through generating gas and the decomposition gas that produces at most of gas of downstream one side flow that generates the gas Knock-Down Component, its concentration that generates gas is very low.Therefore, in annealing device of the present invention, can suppress to generate the generation that gas becomes the solid shape or becomes tarry so-called sublimate.
And, in annealing device of the present invention, generate the gas cyaniding decomposition, so produce reaction heat owing in generating the gas Knock-Down Component, make.Therefore, in above-mentioned structure, be heated because of above-mentioned reaction heat, and form high temperature, and discharge from heating clamber by the gas that generates the gas Knock-Down Component.Therefore, in annealing device of the present invention, even, also can make this generation gas become the situation of solid shape or tarry sublimate hardly just in case the part of generation gas is failed to be decomposed in generating the gas Knock-Down Component and be left behind.
Here, in annealing device of the present invention, make to generate the gas cyaniding decomposition in generating the gas Knock-Down Component, the reaction heat that is produced during by decomposition reaction makes the gas heating that is discharged to downstream one side that generates the gas Knock-Down Component.Therefore, in annealing device of the present invention,, exist the distribution of environmental gas temperature to change, the uneven possibility of heating of heating object takes place because of situation in upstream one side and downstream one side that generate the gas Knock-Down Component.
Therefore, the present invention who provides based on such understanding, it is characterized in that: the heating clamber that comprises the warm-air supply parts of supplying with hot blast and import the hot blast that in these warm-air supply parts, produces and come by this hot blast heating object is heated, the heating object configuring area that has the configuration heating object in the inside of this heating clamber, be heated flow direction downstream one side of the hot blast of configuring area at this, in the generation gas flow area that produces in the heating that is accompanied by heating object, dispose the generation gas Knock-Down Component that described generation gas cyaniding is decomposed.
In such structure, make the Temperature Distribution stabilisation that is heated the zone that disposes heating object, thereby can prevent reliably that the heating of heating object is inhomogeneous.
Here, in the annealing device of the invention described above, it is characterized in that: generate the gas Knock-Down Component and on the catalysis matrix, be carried with the catalyst that promotes to generate the gas cyaniding decomposition.
In such structure, the generation gas that the heating by heating object is produced decomposes, and can suppress to be accompanied by the solids of the cooling that generates gas or the generation of tarry matters.
In above-mentioned annealing device of the present invention, also can be heating clamber by with the upstream wall of warm-air supply members, with it relative downstream wall and being surrounded with respect to the spaced walls of upstream wall and the crisscross expansion of downstream wall, part or all of downstream wall constituted by generating the gas Knock-Down Component.
In annealing device of the present invention, because upstream wall and warm-air supply members so hot blast imports to heating clamber from upstream wall one side, go out from downstream wall one effluent.In annealing device of the present invention, because be to constitute part or all of downstream wall by generating the gas Knock-Down Component, the generation gas that produces decomposed so can make the heat treated that is accompanied by heating object expeditiously.
Here, noble metal or precious metal alloys all have very high oxidation activity for various gases.Therefore, in above-mentioned annealing device of the present invention, generate the gas Knock-Down Component and preferably on the catalysis matrix, be carried with the catalyst that comprises noble metal or precious metal alloys.
In such structure, the generation gas that the heating because of heating object is produced decomposes, and can prevent from reliably to be accompanied by the cooling that generates gas and produces so-called sublimate.
Here, in above-mentioned annealing device of the present invention, generate the gas Knock-Down Component and be carried with the catalyst that promotes to generate the gas cyaniding decomposition on the catalysis matrix, the preferred catalytic matrix is formed with many and generates gas flow paths and be cellular.
In such structure, generation gas is fully contacted with catalyst, generate the gas decomposition thereby can make expeditiously.
Wherein, in the present invention, so-called " cellular " refers to the loose structure that is formed with many streams, and the opening shape of above-mentioned stream can be made polygonals such as triangularity or hexagon, or circular, Elliptical is circular, the suitable shape of curved shapes such as corrugated.
In addition, for above-mentioned annealing device of the present invention, the preferred gas Knock-Down Component that generates is carried with the catalyst that promotes to generate the gas cyaniding decomposition on the catalysis matrix, the catalysis matrix is formed with many and generates gas flow path, in the scope of its thickness below the above 80mm of 30mm.
In such structure, in the abundant oxidation Decomposition of generation gas that produces, generate the gas Knock-Down Component and can prevent to produce very big opposing generating gas flow making the heating that is accompanied by heating object.
Above-mentioned annealing device of the present invention preferably constitutes and be provided with the circulation stream that makes the decomposition gas that produces turn back to the warm-air supply parts in generating the gas Knock-Down Component.
In annealing device of the present invention, generate the analgesic influence of branch that is produced when gas decomposes by in generating the gas Knock-Down Component, making, to decomposition gas or be near the air that generates the gas Knock-Down Component and heat.Therefore, in annealing device of the present invention, be fed into the warm-air supply parts via the circulation stream by the analgesic and heated decomposition gas of branch or the air that generate gas.And decomposition gas or Air mixing gas are heated in the warm-air supply parts, make hot blast and import to heating clamber.
In annealing device of the present invention, because supply with in advance by dividing analgesic decomposition gas that heats or air to the hot blast supply part, so, do not need very big heating efficiency in order to make these mists be heated to set point of temperature.Therefore, according to the present invention, can provide a kind of required lower annealing device of heat loss that adds to heating object.
Annealing device of the present invention is owing to be to import to heating clamber to heating once more by heating clamber and the decomposition gas that decomposes in generating the gas Knock-Down Component, so it is minimum that the amount of being taken into of outdoor gas is suppressed at.Therefore,, make being evenly distributed of hot blast temperature that imports heating clamber, can make the inhomogeneities of the Temperature Distribution of the heating object position that is exposed in the hot blast be suppressed at bottom line according to annealing device of the present invention.
In above-mentioned annealing device of the present invention, preferably generate the gas Knock-Down Component and be set at generation gas flow direction upstream one side that there is the position that flows into possibility in outdoor gas.
In such structure, can be suppressed at bottom line with making because of outdoor gas to generate gas cooled and become sublimate.
In addition, in above-mentioned annealing device of the present invention, preferred warm-air supply parts form including the decomposition gas that produces and the Air mixing gas that imports from the outside heated in generating the gas Knock-Down Component, and the structure that can supply with to heating clamber.
In annealing device of the present invention, under the state that pyrolytic gas that generates the generation of gas Knock-Down Component and the hypothesis outdoor gas lower than this decomposition gas temperature are being pre-mixed, be directed to the warm-air supply parts.Therefore, in annealing device of the present invention, in the moment that imports to the warm-air supply parts, there is temperature deviation hardly in the mist that is made of decomposition gas and outdoor gas.Therefore, according to the present invention, the heating that is difficult to be created in the mist in the warm-air supply parts is inhomogeneous, thereby the Temperature Distribution that can make the hot blast that supplies to heating clamber is homogenising substantially.
Above-mentioned annealing device of the present invention, the adding of heating object that can be applied to be coated with regulation liquid suitably on the surface of plate shaped substrate, pine for.
The effect of invention
According to the present invention, can provide a kind of relatively simple for structure, and the generating capacity and the required power consumption of heat treatment of the sublimate of the organic gas that produced can make heat treatment because of heating object the time be suppressed at MIN annealing device.
Description of drawings
Fig. 1 is the front view that illustrates as the annealing device of an embodiment of the present invention.
Fig. 2 is the sectional block diagram that the in-built part of annealing device shown in Figure 1 is shown.
Fig. 3 is the in-built schematic plan view that annealing device shown in Figure 1 is shown.
Fig. 4 (a) is the stereogram that position relation between the warm-air supply parts of annealing device shown in Figure 1 and the hot blast chamber is shown conceptually, (b) being the A portion enlarged drawing of the catalysis wall shown in (a), (c) is the amplification stereogram to the major part of the catalysis wall shown in (b).
Fig. 5 is the concept map that is schematically illustrated in interior air of annealing device shown in Figure 1 and mixed gas flow.
Fig. 6 is the concept map that the variation of annealing device shown in Figure 1 is shown.
Symbol description:
5: processing substrate portion, 11: the air adjustment part, 12: thermal chamber (heating clamber), 14: warm-air supply parts, 16: air interflow portion, 17: ventilating duct, 40: catalysis wall (generating the gas Knock-Down Component), 47: through hole (stream), 48: the catalysis matrix, 49: catalyst, 70: generate the gas Knock-Down Component.
The specific embodiment
Then, in the time of with reference to accompanying drawing, the annealing device as one embodiment of the present invention is explained.Fig. 1 is the front view that illustrates as the annealing device of one embodiment of the present invention.Fig. 2 is the sectional block diagram that the in-built part of annealing device shown in Figure 1 is shown.Fig. 3 illustrates the in-built schematic plan view of annealing device shown in Figure 1.Fig. 4 (a) illustrates the warm-air supply parts of annealing device shown in Figure 1 and the stereogram of the relation of the position between the thermal chamber conceptually, (b) being the A portion enlarged drawing of (a) shown catalysis wall, (c) is (b) shown catalysis wall major part view of apparatus.Fig. 5 schematically illustrates the interior air of annealing device shown in Figure 1 and the concept map of mixed gas flow.Fig. 6 is the concept map that the variation of annealing device shown in Figure 1 is shown.
In Fig. 1, the 1st, the annealing device of present embodiment.Annealing device 1 constitutes: be provided with machine resettlement section 3 below metal box-shaped body box 2, be provided with processing substrate portion 5 above it.Machine resettlement section 3 is built-in with the control device (not shown) of supply unit (not shown) that feeds electrical power to processing substrate portion 5 and the work of controlling processing substrate portion 5 etc.
If further specifically describe, then as shown in Figures 2 and 3, air adjustment part 11 is divided into warm-air supply parts 14, ventilating duct 17 and machine chamber 18 substantially.Warm-air supply parts 14 have: the heating function that air etc. is heated and the air of heating etc. is sent to air-supply function in the thermal chamber 12.In addition, the boundary member of warm-air supply parts 14 and thermal chamber 12 is provided with the filter 21 that is used to purify air etc.
Near warm-air supply parts 14,, has air interflow portion 16,16 in the front of thermal chamber 12 side and the back side one side. Air interflow portion 16,16 is communicated with ventilating duct 17 respectively.Air interflow portion 16 has the air that will import from outdoor gas introduction port (not shown) and the gas that flows into from ventilating duct 17 collaborate, as the function in the premixed space that is used to mix these gases.
Opening shape for catalysis matrix 48, consider that stream opposing and gas are with respect to the contact area of carrying the catalyst of holding 49 etc., replace triangle shown in present embodiment with polygonal, in addition, make curved shapes such as circular, oval, waveform and also be fine.If from the viewpoint of resisting with respect to the catalytic action and the ventilation of oxidative decomposition, the thickness of catalysis matrix 48 (suitable with the W of Fig. 4) is preferably the degree of 30～80mm.In present embodiment, the thickness of catalysis matrix 48 is about 50mm.Therefore, catalysis wall 40 shows sufficient catalytic action with respect to the generation gas that is produced in thermal chamber 12, and can not form very big stream opposing to the hot blast in the thermal chamber 12 of flowing through.
Be carried on the oxidative decomposition that catalyst 49 on the catalysis matrix 48 is used to promote the generation gas of discharging from thermal chamber 12.In the present embodiment, adopt material platinum (Pt) or palladium (Pd) noble metal of etc.ing or these precious metal alloys etc., that have a greater catalytic effect with respect to generation gas to be used as catalyst 49.Catalyst 49 is with respect to the generation gas that is produced in thermal chamber 12, under the temperature environment of about 150 ℃～200 ℃ of degree, demonstrate catalytic activity, under thermal chamber 12 reaches 230 ℃～250 ℃ state as heat treatment (burning till) temperature, demonstrate sufficient catalytic activity.
As shown in Figure 3, in the substantial middle portion of thermal chamber 12, dispose the mounting frame 55 that is used for the mounting substrate.Mounting frame 55 and known prior art that annealing device adopted was identical, have along above-below direction the structure that multilayer is used for the supporting layer 64 of horizontal mounting substrate W is set.
In thermal chamber 12, as shown in Figures 2 and 3, be provided with the temperature sensor 68 that is used for measures ambient temperature.Temperature sensor 68 is configured to the below that its front end arrives upstream one side of thermal chamber 12.Annealing device 1 constitutes the action that makes not shown control device FEEDBACK CONTROL heater strip according to the detected temperatures of temperature sensor 68, the temperature in the thermal chamber 12 is adjusted into the temperature (being 230～250 ℃ in the present embodiment) of regulation.
For the annealing device 1 of present embodiment, the gas flow when heat treatment has feature.Below, in reference concept map shown in Figure 5, the gas stream during with heat treatment comes the work of annealing device 1 is illustrated as emphasis.
Before heat treatment began, the control device of annealing device 1 (not shown) made startups such as the not shown pressure fan that constitutes warm-air supply parts 14 or heater, and heated air is imported in the thermal chamber 12.Therefore, in annealing device 1, air flow through thermal chamber 12 and ventilating duct 17 and turn back to the circular flow of warm-air supply parts 14 have been formed.
As noted above, when make that air circulates in annealing device 1 during, in warm-air supply parts 14, little by little air is heated, make thermal chamber 12 interior environment temperatures reach the heat treatment temperature (being 230 ℃～250 ℃ in the present embodiment) of regulation.In addition, the catalysis wall 40 that is arranged on the downstream of thermal chamber 12 has been subjected to the influence of the air stream of circulation in annealing device 1 etc. and has formed high temperature gradually, when reaching the regulation heat treatment temperature in thermal chamber 12, the contained catalyst of holding 49 has also reached the temperature that can give full play to catalytic action on the internal face 47a of through hole 47 being formed with.
If the environment temperature of thermal chamber 12 has reached heat treatment temperature, then be configured on the shifting apparatus such as automatic control mechanical arm of outside of annealing device 1 and be equipped with the substrate W that will heat-treat.On the other hand, annealing device 1 makes cylinder 8 actions, thereby the shutter 10 that seals the mouth 6 that changes the outfit is opened.If shutter 10 is opened, then substrate W flatly inserts from the mouth 6 that changes the outfit by the automatic control mechanical arm, and is positioned on each supporting layer 64.If substrate W is positioned on each supporting layer 64 of mounting frame 55, then close shutter 10.
As noted above, carry the substrate W on the supporting layer 64 of mounting frame 55, be exposed to the hot blast that in thermal chamber 12, flows and heat-treat (burning till).If substrate W heat-treats, the vaporizer of coating in advance from the teeth outwards then, thus at high temperature produce the generation gas of organic property.Therefore, if heat treatment begins, then include downstream one side flow that generates gas and Air mixing gas heat treated chamber 12.
Arrive catalysis wall 40 if include the mist that generates gas, then flow in a plurality of through holes 47 that on catalysis matrix 48, are provided with.As noted above, because in thermal chamber 12, reached the heat treatment temperature of regulation, so the catalyst 49 that carries on the internal face 47a that is held in catalysis matrix 48 is in the state that can give full play to catalytic action with respect to generation gas.Therefore, if generate gas, then because by carrying the oxidative decomposition (C that the catalyst 49 that is held on the internal face 47a that is formed with through hole 47 promotes to generate gas by catalysis wall 40
mH
n+ O
2→ CO
2+ H
2O), thus make and generate gas and resolve into carbon dioxide and moisture content.
Above-mentioned oxidative decomposition is accompanied by the generation of reaction heat and produces.Therefore, if in annealing device 1 beginning heat treatment, then the mist by catalysis wall 40 is because along with the reaction heat of the oxidative decomposition of generation gas, and is discharged in the ventilating duct 17 under heated state.The mist that is discharged to ventilating duct 17 is maintained the condition of high temperature, simultaneously mobile in the ventilating duct 17,17 that between the spaced walls 41,43 of perisporium 13b, the 13d of processing substrate portion 5 and thermal chamber 12, forms.
The mist that flows through ventilating duct 17,17 when keeping the condition of high temperature and flow into the air interflow portion 16 of the both sides that are formed at warm-air supply parts 14, outdoor gas pre-mixed the closing that imports with outside from annealing device 1.Therefore, outdoor gas by and mist between heat exchange be carried out to a certain degree heating.Outdoor gas and mist are heated to predetermined temperature in warm-air supply parts 14, and are directed in the thermal chamber 12.Annealing device 1 circulates heated mist according to said sequence in thermal chamber 12, and proceeds the heat treatment of substrate W.
As noted above, in the annealing device 1 of present embodiment, the major part that produces owing to the hot blast heated substrates W that supplies with in warm-air supply parts heat treated chambers 12 14 generates gas, is carried catalyst 49 oxidation Decomposition that are held on the catalysis wall 40.Here, in the annealing device 1 of present embodiment, formed part or all of the downstream wall 20b that constitutes thermal chamber 12 by catalysis wall 40, simultaneously, adopted to be carried with catalytic activity and to be used as catalysis wall 40 with respect to noble metal such as high platinum of organic gas or palladium and precious metal alloys.And catalysis wall 40 forms: adopt to have being of a plurality of through holes 47 cellular parts as catalysis matrix 48, be formed with the structure that is carried with catalyst 49 on the internal face 47a of each through hole 47.Therefore, the major part generation gas that flows into catalysis wall 40 is the mist of main component by the carbon dioxide that the decomposition that generates gas becomes to produce, so it is extremely low to generate the concentration of gas.
In addition, in annealing device 1, generate the reaction heat that is produced when gas cyaniding decomposes by making in catalysis wall 40, coming what decomposed by catalysis wall 40 is that the mist of main component heats with the carbon dioxide, and forms high temperature.Therefore, in annealing device 1, the temperature of mist that flows through ventilating duct 17 in heat treatment work is higher, is not decomposed in generating gas decomposition portion and left behind even for example generate the part of gas, also can produce sublimate hardly.
In annealing device 1, the mist that carries out oxidation Decomposition and form high temperature in catalysis wall 40 flows through ventilating duct 17, in warm-air supply parts 14 with the new outdoor gas that imports mixes from the outside.In addition, annealing device 1 be make by thermal chamber 12 and in catalysis wall 40 decomposition gas of oxidation Decomposition heated once more and be used, most in device, the circulating of mist.Therefore, annealing device 1 is heated to set point of temperature in order to make the mist that supplies to thermal chamber 12, only needs the electric power of necessity seldom to get final product, and can contribute to some extent aspect the saving energy.In addition, in annealing device 1, because in air interflow portion 16, be directed to warm-air supply parts 14 after outdoor gas and the mist premixed, there is the uneven temperature situation hardly so import to the hot blast of thermal chamber 12 from warm-air supply parts 14, can not exist deviation ground that substrate W is heated.
As noted above, mist is because of by the 40 oxidized decomposition of catalysis wall and be heated.Therefore, by the mist after the catalysis wall 40 because of the CONCENTRATION DISTRIBUTION of mist or might produce the Temperature Distribution of regulation by principal elements such as catalysis wall 40 certain positions.According to such understanding, in the annealing device 1 of present embodiment, made catalysis wall 40 has been configured in the structure of downstream one side that mounting has the mounting frame 55 of substrate W.That is,, in the zone of downstream one side of the flow direction of the mist in the place of heat-treating, dispose catalysis wall 40, carry out oxidative decomposition in this zone for annealing device 1.Therefore, in the annealing device 1 of present embodiment, the Temperature Distribution that is exposed to the hot blast of substrate W is uniformly substantially, can heat substrate W to zero deflection.
As noted above, for annealing device 1, because generating gas, the major part that produces in thermal chamber 12 in catalysis wall 40, is decomposed, so produce sublimate hardly.Therefore, for annealing device 1, even proceed heat treatment work also can the maintaining heat treating apparatus peace and quiet in 1, simultaneously, can prevent the external leaks of sublimate heat treated device 1 when shutter 10 or door 7 are opened and pollute clean room etc.In addition, for above-mentioned annealing device 1, formed part or all of the downstream wall 20b that is located at generation gas flow direction downstream one side that substrate W go up to produce by catalysis wall 40, structure is very simple.
In addition, for the catalysis wall 40 that is adopted in the above-described embodiment, though be in the through hole 47 of cellular catalysis matrix 48, to be carried with catalyst 49, yet the present invention is not limited thereto, for example also can adopt the catalyst at or ball shape granular by the inner filling of the box of the raw material made with air permeabilities such as wire nettings.Forming under this structure situation, also can make the heat treatment that is accompanied by substrate W reliably and the generation gas cyaniding that produces decomposition.In the above-described embodiment, because adopting in heat treatment (burning till) temperature is to demonstrate the high price raw material of the platinum (Pt) of sufficient catalytic activity or palladium (Pd) noble metal of etc.ing or these precious metal alloys as catalyst 49, so catalysis wall 40 has the tendency at high price that becomes to generating gas under 230 ℃～250 ℃ the environment temperature.Therefore, to carry the loading amount of urging outer agent 49 that is held on the catalysis wall 40 be optimization if the generation gas concentration that generates during according to heat treatment makes, and then can reduce the loading amount of catalyst 49, thereby can further reduce the manufacturing cost of annealing device 1.
Claims (9)
1. annealing device is characterized in that:
Comprise the warm-air supply parts of supplying with hot blast, import the hot blast that in these warm-air supply parts, produces and come the heating clamber that heated by the heating object of mounting and generation gas that the heating that is accompanied by the described heating object in the described heating clamber is produced turns back to the circulation stream of described warm-air supply parts by this hot blast
In the inside of described heating clamber, have the position that mounting has described heating object,
Inside at this annealing device, in described generation gas flow area, dispose the generation gas Knock-Down Component that described generation gas cyaniding is decomposed, described generation gas Knock-Down Component is configured in flow direction downstream one side of hot blast that mounting has the position of described heating object, and is arranged in this generation gas to way that described warm-air supply parts flow.
2. annealing device according to claim 1 is characterized in that:
Heating clamber by with the upstream wall of warm-air supply members, with it relative downstream wall and surrounded in the spaced walls of the direction expansion that intersects with respect to upstream wall and downstream wall, part or all of downstream wall is made of generation gas Knock-Down Component.
3. annealing device according to claim 1 is characterized in that:
Generate the gas Knock-Down Component and on the catalysis matrix, be carried with the catalyst that promotes to generate the gas cyaniding decomposition.
4. annealing device according to claim 1 is characterized in that:
Generate the gas Knock-Down Component and on the catalysis matrix, be carried with the catalyst that comprises noble metal or precious metal alloys.
5. annealing device according to claim 1 is characterized in that:
Generate the gas Knock-Down Component and on the catalysis matrix, be carried with the catalyst that promotes to generate the gas cyaniding decomposition,
The catalysis matrix is formed with many and generates gas flow path and be cellular.
6. annealing device according to claim 1 is characterized in that:
Generate the gas Knock-Down Component and on the catalysis matrix, be carried with the catalyst that promotes to generate the gas cyaniding decomposition,
The catalysis matrix is formed with many and generates gas flow path, in the scope of its thickness below the above 80mm of 30mm.
7. annealing device according to claim 1 is characterized in that:
The mounting frame that has the configuration heating object in the inside of described heating clamber,
Described generation gas Knock-Down Component is configured in flow direction downstream one side of the hot blast of this mounting frame, with respect to described mounting chord position in a side opposite with described warm-air supply parts.
8. annealing device according to claim 1 is characterized in that:
The warm-air supply parts heat include decomposition gas that produces and the Air mixing gas that imports from the outside in generation gas Knock-Down Component, and it can be supplied with to heating clamber.
9. annealing device according to claim 1 is characterized in that:
Heating object is coated with the liquid of regulation on the surface of flat substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004194242A JP2006017357A (en) | 2004-06-30 | 2004-06-30 | Heat treatment device |
| JP2004194242 | 2004-06-30 |
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| Publication Number | Publication Date |
|---|---|
| CN1737478A CN1737478A (en) | 2006-02-22 |
| CN100573011C true CN100573011C (en) | 2009-12-23 |
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| CNB2005100807280A Expired - Fee Related CN100573011C (en) | 2004-06-30 | 2005-06-30 | Annealing device |
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| JP (1) | JP2006017357A (en) |
| KR (1) | KR101184570B1 (en) |
| CN (1) | CN100573011C (en) |
| TW (1) | TWI275762B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5107528B2 (en) * | 2006-04-24 | 2012-12-26 | 光洋サーモシステム株式会社 | Exhaust gas treatment unit |
| JP4291832B2 (en) * | 2006-06-23 | 2009-07-08 | 株式会社フューチャービジョン | Air supply and exhaust system for substrate firing furnace |
| JP4372806B2 (en) * | 2006-07-13 | 2009-11-25 | エスペック株式会社 | Heat treatment equipment |
| JP4273145B2 (en) * | 2006-09-13 | 2009-06-03 | エスペック株式会社 | Heat treatment equipment |
| WO2008038880A1 (en) * | 2006-09-28 | 2008-04-03 | Korea Pionics Co., Ltd. | Annealing apparatus |
| JP5015541B2 (en) * | 2006-10-07 | 2012-08-29 | 昭和鉄工株式会社 | Heat treatment equipment |
| JP4630307B2 (en) * | 2007-05-22 | 2011-02-09 | エスペック株式会社 | Heat treatment equipment |
| JP4589943B2 (en) * | 2007-06-12 | 2010-12-01 | エスペック株式会社 | Heat treatment equipment |
| JP2009047351A (en) * | 2007-08-20 | 2009-03-05 | Tohoku Univ | Circulation type substrate baking furnace |
| WO2009088056A1 (en) * | 2008-01-11 | 2009-07-16 | Nikki-Universal Co., Ltd. | Catalyst for purifying discharge gas from heat-treatment furnace, method of purifying discharge gas from heat-treatment furnace with the catalyst, and method of preventing contamination of heat-treatment furnace |
| JP4331784B2 (en) * | 2008-07-22 | 2009-09-16 | 株式会社フューチャービジョン | Supply and exhaust method for substrate firing furnace |
| US20170032983A1 (en) * | 2015-07-29 | 2017-02-02 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, maintenance method of substrate processing apparatus, and storage medium |
| JP6855687B2 (en) * | 2015-07-29 | 2021-04-07 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method, maintenance method of substrate processing equipment, and storage medium |
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| JP3696505B2 (en) * | 2000-12-15 | 2005-09-21 | 光洋サーモシステム株式会社 | Heat treatment apparatus and heat treatment method |
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2005
- 2005-06-20 TW TW094120473A patent/TWI275762B/en not_active IP Right Cessation
- 2005-06-28 KR KR1020050056236A patent/KR101184570B1/en not_active IP Right Cessation
- 2005-06-30 CN CNB2005100807280A patent/CN100573011C/en not_active Expired - Fee Related
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| US5320666A (en) * | 1992-09-15 | 1994-06-14 | Olson Larry K | Low pressure contaminant extraction |
| CN1222636A (en) * | 1998-01-08 | 1999-07-14 | 本田技研工业株式会社 | Metallic carrier for catalyst |
| JP2003214772A (en) * | 2002-01-21 | 2003-07-30 | Ngk Insulators Ltd | Heating furnace |
| JP2003247706A (en) * | 2002-02-26 | 2003-09-05 | Japan Steel Works Ltd:The | Combustion method for organic waste and its device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI275762B (en) | 2007-03-11 |
| JP2006017357A (en) | 2006-01-19 |
| KR20060048613A (en) | 2006-05-18 |
| TW200604479A (en) | 2006-02-01 |
| CN1737478A (en) | 2006-02-22 |
| KR101184570B1 (en) | 2012-09-21 |
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