TWI400418B - Heat treatment apparatus and heat treatment method - Google Patents

Heat treatment apparatus and heat treatment method Download PDF

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Publication number
TWI400418B
TWI400418B TW98126621A TW98126621A TWI400418B TW I400418 B TWI400418 B TW I400418B TW 98126621 A TW98126621 A TW 98126621A TW 98126621 A TW98126621 A TW 98126621A TW I400418 B TWI400418 B TW I400418B
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Taiwan
Prior art keywords
gas
substrate
shower head
heater
heat treatment
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TW98126621A
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Chinese (zh)
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TW201013139A (en
Inventor
Kiyoshi Takahashi
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Shibaura Mechatronics Corp
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00Forming, maintaining, or circulating atmospheres in heating chambers
    • F27D7/06Forming or maintaining special atmospheres or vacuum within heating chambers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00Furnaces of a kind not covered by any preceding group
    • F27B17/0016Chamber type furnaces
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00Furnaces of a kind not covered by any preceding group
    • F27B17/0016Chamber type furnaces
    • F27B17/0025Especially adapted for treating semiconductor wafers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00Furnaces of a kind not covered by any preceding group
    • F27B17/0016Chamber type furnaces
    • F27B17/0083Chamber type furnaces with means for circulating the atmosphere
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00Arrangement of elements for electric heating in or on furnaces
    • F27D11/02Ohmic resistance heating
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00Cooling of furnaces or of charges therein
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Description

熱處理裝置及熱處理方法Heat treatment device and heat treatment method

本發明係關於熱處理裝置及熱處理方法。The present invention relates to a heat treatment apparatus and a heat treatment method.

於專利文獻1中揭示一方面使處理室內壓力成為大氣壓以上之壓力,並使設於作為處理對象之工件周邊之附近位置之加熱器作動而對工件進行加熱處理者。Patent Document 1 discloses a method in which a pressure in a processing chamber is equal to or higher than atmospheric pressure, and a heater provided in a position near a periphery of a workpiece to be processed is heated to heat a workpiece.

專利文獻1:日本特許第2622356號公報Patent Document 1: Japanese Patent No. 2622356

使用加熱器之工件之加熱處理,當加熱處理之對象為特別大型基板之情形時,存在因加熱不均而於基板面內產生大溫度差以致破損之情形。In the case of heat treatment of a workpiece using a heater, when the object to be heat-treated is a particularly large substrate, there is a case where a large temperature difference occurs in the surface of the substrate due to uneven heating to cause breakage.

又,專利文獻1中,雖藉由風扇而於加熱室內產生氣流,但這未必能夠對工件之被處理面均勻施加,或有氣流未被加熱,因此不足以對工件被處理面進行均等加熱。Further, in Patent Document 1, although a gas flow is generated in the heating chamber by the fan, this does not necessarily apply to the surface to be processed of the workpiece uniformly, or the airflow is not heated, so that it is not sufficient to uniformly heat the surface to be treated of the workpiece.

本發明係鑒於前述問題而完成者,其提供一種熱處理裝置及熱處理方法,使即使大型之基板亦可於面內無參差地均等進行熱處理。The present invention has been made in view of the above problems, and provides a heat treatment apparatus and a heat treatment method so that even a large substrate can be uniformly heat-treated without unevenness in the plane.

根據本發明之一態樣,提供一種該熱處理裝置,其特徵在於具備:相對於大氣可密閉之密閉容器;設於前述密閉容器內,可收容基板之處理空間;於前述密閉容器內與前述處理空間對向設置之加熱器;及噴淋頭,其具有導入相 對於前述基板導入為惰性、且加熱或冷卻前述基板之氣體之氣體導入孔,及與前述基板對向設置、且將經由前述氣體導入孔而被導入內部之前述氣體朝向前述基板吹出之複數之氣體吹出孔,且該噴淋頭係設於前述密閉容器內;且,於前述噴淋頭之內部設有將前述氣體導入孔側之上游室與前述氣體吹出孔側之下游室分隔之分散板;於前述分散板上形成使前述上游室與前述下游室連通之複數之貫通孔;前述複數之氣體吹出孔之所有開口之總面積比前述複數之貫通孔之所有開口之總面積為大;於被導入前述氣體之前述噴淋頭之內部中,前述上游室之壓力比前述下游室之壓力為高;相對於已減壓之前述處理空間,前述氣體係從前述氣體吹出孔吹出,而於前述處理空間內置換前述氣體。According to an aspect of the present invention, a heat treatment apparatus comprising: a sealed container that can be sealed with respect to the atmosphere; a processing space that can accommodate a substrate in the sealed container; and the treatment in the sealed container; a heater opposite to the space; and a showerhead having an introduction phase a gas introduction hole that is inert to the substrate and that heats or cools the gas of the substrate, and a gas that is disposed opposite to the substrate and that blows the gas introduced into the substrate through the gas introduction hole toward the substrate a hole is blown out, and the shower head is disposed in the sealed container; and a dispersing plate that separates an upstream chamber on the gas introduction hole side from a downstream chamber on the gas blowing hole side is provided in the shower head; Forming, on the dispersing plate, a plurality of through holes for communicating the upstream chamber and the downstream chamber; a total area of all openings of the plurality of gas blowing holes is larger than a total area of all openings of the plurality of through holes; In the interior of the shower head into which the gas is introduced, the pressure of the upstream chamber is higher than the pressure of the downstream chamber; and the gas system is blown out from the gas blowing hole with respect to the processing space that has been decompressed, and the treatment is performed The aforementioned gas is replaced in space.

又,根據本發明之另一態樣,提供一種熱處理方法,其特徵在於:使收容有基板之處理空間內減壓;於前述減壓後,藉由與前述處理空間對向設置之加熱器將前述基板加熱;藉由前述加熱器之加熱使前述基板或前述處理空間內達到所希望之溫度後,將相對於前述基板為惰性、且已加熱之氣體,從與前述基板對向設置之噴淋頭吹附於前述基板而加熱前述基板;前述噴淋頭之內部之上游側與下游側之間藉由分散板被分隔成複數之空間,被導入前述噴淋頭內之前述氣體係於前述複數之空間內擴散、並隨著逐漸向下游側推進,而使壓力緩緩下降。Further, according to another aspect of the present invention, a heat treatment method is provided which decompresses a processing space in which a substrate is housed, and after the depressurization, a heater disposed opposite to the processing space Heating the substrate; after the substrate or the processing space reaches a desired temperature by heating by the heater, the gas that is inert to the substrate and heated is sprayed from the opposite side of the substrate The head is blown to the substrate to heat the substrate; the upstream side and the downstream side of the inside of the shower head are partitioned into a plurality of spaces by a dispersion plate, and the gas system introduced into the shower head is in the plural The space diffuses and gradually pushes toward the downstream side, causing the pressure to slowly drop.

根據本發明,可提供一種即使大型之基板亦可於面內無參差地均等進行熱處理之熱處理裝置及熱處理方法。According to the present invention, it is possible to provide a heat treatment apparatus and a heat treatment method in which a large-sized substrate can be uniformly heat-treated in a plane without unevenness.

以下,參照圖式,對本發明之實施形態進行說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

圖1係例示本發明之實施形態之熱處理裝置之要部構成之模式圖。Fig. 1 is a schematic view showing the configuration of a main part of a heat treatment apparatus according to an embodiment of the present invention.

本發明之實施形態之熱處理裝置具有以下構造:於相對於大氣可維持密閉氛圍之密閉容器1內,設有上加熱器21、下加熱器22及噴淋頭10。上加熱器21、下加熱器22係例如於金屬管中保持發熱線之護套加熱器或燈加熱器。上加熱器21與下加熱器22對向設置,於該等之間形成處理空間20。The heat treatment apparatus according to the embodiment of the present invention has a structure in which an upper heater 21, a lower heater 22, and a shower head 10 are provided in a sealed container 1 capable of maintaining a sealed atmosphere with respect to the atmosphere. The upper heater 21 and the lower heater 22 are sheath heaters or lamp heaters that hold a heating wire, for example, in a metal pipe. The upper heater 21 and the lower heater 22 are disposed opposite to each other, and the processing space 20 is formed between the upper heaters 22.

於處理空間20之上部設置包圍其周圍之上罩23,於處理空間20之下部設置包圍其周圍之下罩24。使上罩23及下罩24之一部分開口,形成基板5之搬出入口25。經由該搬出入口25,將作為處理對象之基板5搬出入於處理空間20。A cover 23 surrounding the periphery of the processing space 20 is provided, and a cover 24 surrounding the periphery of the processing space 20 is provided. One of the upper cover 23 and the lower cover 24 is partially opened to form the carry-out port 25 of the substrate 5. The substrate 5 to be processed is carried into the processing space 20 via the carry-out port 25 .

噴淋頭10設於上加熱器21之上。於下加熱器22之下方設置排氣口26。於排氣口26連接未圖示之真空泵等排氣系統,通過該排氣口26,使包含處理空間20之密閉容器1內進行排氣。又,從噴淋頭10吹出之氣體亦通過排氣口26從處理空間20內排氣。考慮到從噴淋頭10向基板5吹附之氣體之流動,排氣口26宜位於下加熱器22之下方。The shower head 10 is disposed above the upper heater 21. An exhaust port 26 is provided below the lower heater 22. An exhaust system such as a vacuum pump (not shown) is connected to the exhaust port 26, and the inside of the sealed container 1 including the processing space 20 is exhausted through the exhaust port 26. Further, the gas blown from the shower head 10 is also exhausted from the processing space 20 through the exhaust port 26. The exhaust port 26 is preferably located below the lower heater 22 in consideration of the flow of the gas blown from the shower head 10 to the substrate 5.

以下,對噴淋頭10之詳細情況進行說明。Hereinafter, the details of the shower head 10 will be described.

圖2係從下側看噴淋頭10之立體圖。Fig. 2 is a perspective view of the shower head 10 as seen from the lower side.

圖3係噴淋頭10之剖面圖,圖4係表示圖3中之要部之放大圖。3 is a cross-sectional view of the shower head 10, and FIG. 4 is an enlarged view of the main part of FIG.

噴淋頭10形成為具有與作為處理對象之基板5之面積接近之平面尺寸之四角塊狀,如圖3所示,於其內部形成藉由分散板17分隔之上游室13與下游室14。The shower head 10 is formed in a square block shape having a planar size close to the area of the substrate 5 to be processed, and as shown in FIG. 3, the upstream chamber 13 and the downstream chamber 14 partitioned by the dispersion plate 17 are formed therein.

分散板17設於噴淋頭10之厚度方向之大致中間位置,且相對於噴淋頭10之面方向大致平行。於噴淋頭10之天板部11之中心形成氣體導入孔15(參照圖3),該氣體導入孔15通往上游室13。又,於氣體導入孔15連接著氣體導入管16,氣體導入管16與未圖示之氣體供給源連接。於天板部11與分散板17之間形成上游室13。於噴淋頭10之底部設有簇射極板12。於該簇射極板12與分散板17之間形成下游室14。The dispersion plate 17 is provided at a substantially intermediate position in the thickness direction of the shower head 10, and is substantially parallel to the surface direction of the shower head 10. A gas introduction hole 15 (see FIG. 3) is formed at the center of the ceiling portion 11 of the shower head 10, and the gas introduction hole 15 leads to the upstream chamber 13. Further, a gas introduction pipe 16 is connected to the gas introduction hole 15, and the gas introduction pipe 16 is connected to a gas supply source (not shown). An upstream chamber 13 is formed between the ceiling portion 11 and the dispersion plate 17. A shower plate 12 is provided at the bottom of the shower head 10. A downstream chamber 14 is formed between the shower plate 12 and the dispersion plate 17.

於簇射極板12上形成複數之氣體吹出孔31。如圖2所示,各氣體吹出孔31形成為相互平行延伸之狹縫狀。簇射極板12經由上加熱器21而與處理空間20對向。上加熱器21係由例如複數根護套加熱器或燈加熱器構成,從簇射極板12之氣體吹出孔31吹出之氣體,穿過該等複數根護套加熱器或燈加熱器間之間隙,而吹附於收容於處理空間20之基板5。A plurality of gas blowing holes 31 are formed in the shower plate 12. As shown in FIG. 2, each of the gas blowing holes 31 is formed in a slit shape extending in parallel with each other. The shower plate 12 is opposed to the processing space 20 via the upper heater 21. The upper heater 21 is composed of, for example, a plurality of sheathed heaters or lamp heaters, and the gas blown from the gas blowing holes 31 of the shower plate 12 passes through the plurality of sheathed heaters or the lamp heaters. The gap is blown to the substrate 5 housed in the processing space 20.

於分散板17上,形成使上游室13與下游室14連通之複數之貫通孔32(參照圖4)。從氣體導入孔15被導入上游室13內之氣體,通過分散板17之貫通孔32流入下流室14,流入下流室14內之氣體係從簇射極板12之氣體吹出孔31向簇射極板外部吹出。A plurality of through holes 32 (see FIG. 4) for connecting the upstream chamber 13 and the downstream chamber 14 are formed in the dispersion plate 17. The gas introduced into the upstream chamber 13 from the gas introduction hole 15 flows into the downstream chamber 14 through the through hole 32 of the dispersion plate 17, and the gas system flowing into the downstream chamber 14 flows from the gas blowing hole 31 of the shower plate 12 toward the shower electrode. The outside of the board is blown out.

此處,本實施形態中,係採用氣體於噴淋頭10內從進到出之流動中,以產生上游側壓力高而下游側壓力低之壓力差之方式使傳導性慢慢增加之構造。Here, in the present embodiment, a structure in which the conductivity is gradually increased so that the pressure on the upstream side is high and the pressure on the downstream side is low is generated in the flow from the inlet to the outlet in the shower head 10.

具體而言,以在分散板17之貫通孔32之位置(分散板17之面方向之位置)之正下方不設置(不重疊)氣體吹出孔31之方式,使貫通孔32與氣體吹出孔31之面方向之位置錯開。使貫通孔32之中心位於簇射極板12之未形成氣體吹出孔31之部分之正上方。Specifically, the through hole 32 and the gas blowing hole 31 are provided so that the gas blowing hole 31 is not provided (not overlapping) directly below the position of the through hole 32 of the dispersion plate 17 (the position in the surface direction of the dispersion plate 17). The position of the direction of the face is staggered. The center of the through hole 32 is located directly above the portion of the shower plate 12 where the gas blowing hole 31 is not formed.

此外,形成為使所有氣體吹出孔31之開口總面積比所有貫通孔32之開口總面積為大。例如,既可為使每個貫通孔32之開口面積比每個氣體吹出孔31之開口面積小,且使貫通孔32之數量比氣體吹出孔31之數量少。或,亦可為使每個貫通孔32及氣體吹出孔31之開口面積相同,僅將貫通孔32之個數設為較少。Further, the total opening area of all the gas blowing holes 31 is formed to be larger than the total opening area of all the through holes 32. For example, the opening area of each of the through holes 32 may be smaller than the opening area of each of the gas blowing holes 31, and the number of the through holes 32 may be smaller than the number of the gas blowing holes 31. Alternatively, the opening area of each of the through holes 32 and the gas blowing holes 31 may be the same, and only the number of the through holes 32 may be made small.

藉由如此之構造,因具有分散板17且形成於該分散板17之貫通孔32之開口總面積並不很大,故以相對高壓被導入上游室13內之氣體不會立即流入下游室14,而是於面方向擴散於上游室13內而逐漸充滿於上游室13內。充滿上游室13內之氣體係通過分散板17之貫通孔32而流入下游室14。With such a configuration, since the total area of the opening having the dispersion plate 17 and formed in the through hole 32 of the dispersion plate 17 is not large, the gas introduced into the upstream chamber 13 at a relatively high pressure does not immediately flow into the downstream chamber 14 Instead, it diffuses in the surface direction in the upstream chamber 13 and gradually fills the inside of the upstream chamber 13. The gas system filled in the upstream chamber 13 flows into the downstream chamber 14 through the through holes 32 of the dispersion plate 17.

又,因使貫通孔32與簇射極板12之氣體吹出孔31之位置錯開,故從分散板17之貫通孔32流入下游室14內之氣體不會立即從氣體吹出孔31向外部吹出,而是於面方向擴散於下游室14內而廣佈於下游室14內。Further, since the positions of the through holes 32 and the gas blowing holes 31 of the shower plate 12 are shifted, the gas flowing into the downstream chamber 14 from the through holes 32 of the dispersion plate 17 is not immediately blown out from the gas blowing holes 31. Instead, it spreads in the downstream direction in the surface of the downstream chamber 14 and is widely distributed in the downstream chamber 14.

因此,被導入噴淋頭10內之氣體,隨著於噴淋頭10內從 上游側向下游側推進,其勢(速度及壓力)逐漸被減弱,以致於面方向均勻分布,而可不偏向特定之氣體吹出孔31地遍及簇射極板12之面方向整體,並從所有氣體吹出孔31均勻地吹出氣體。Therefore, the gas introduced into the shower head 10 follows the inside of the shower head 10 The upstream side is advanced toward the downstream side, and its potential (speed and pressure) is gradually weakened so that the surface direction is evenly distributed, and the specific gas blowing hole 31 can be directed over the entire surface of the shower plate 12, and from all gases. The blowing hole 31 uniformly blows out the gas.

又,於噴淋頭10內,設有複數根內部加熱器18。各內部加熱器18被支持於分散板17上而配置於上游室13內,其兩端貫通噴淋頭10之側壁,連接於未圖示之電源。Further, a plurality of internal heaters 18 are provided in the shower head 10. Each of the internal heaters 18 is supported by the dispersion plate 17 and disposed in the upstream chamber 13, and both ends thereof penetrate the side wall of the shower head 10 and are connected to a power source (not shown).

以下,對使用本實施形態之熱處理裝置之處理方法進行說明。Hereinafter, a treatment method using the heat treatment apparatus of the present embodiment will be described.

本發明之實施形態中作為處理對象之基板5,係例如用於平面顯示器、太陽能電池等之基板,特別而言本實施形態之熱處理裝置,可對1邊長度為1米以上之大型基板有效進行均等加熱、冷卻處理。In the embodiment of the present invention, the substrate 5 to be processed is, for example, a substrate for a flat panel display or a solar cell. In particular, the heat treatment apparatus of the present embodiment can efficiently perform a large substrate having a length of one meter or more. Equal heating and cooling treatment.

基板5藉由例如搬運機器臂,從搬出入口25被搬入處理空間20內。基板5在處理空間20內位於上加熱器21與下加熱器22之間,由未圖示之支持部予以支持。上加熱器21與基板5之上面對向,下加熱器22與基板5之下面對向,各自主要以輻射熱對基板5加熱。The substrate 5 is carried into the processing space 20 from the carry-out port 25 by, for example, a transport robot arm. The substrate 5 is located between the upper heater 21 and the lower heater 22 in the processing space 20, and is supported by a support portion (not shown). The upper heater 21 faces the substrate 5, and the lower heater 22 faces the lower surface of the substrate 5, and each of them mainly heats the substrate 5 with radiant heat.

使包含有收容保持著基板5之處理空間20之密閉容器1內減壓。將處理空間20內減壓至例如0.6 Pa左右後,啟動上加熱器21及下加熱器22開始進行基板5之加熱。The inside of the sealed container 1 including the processing space 20 in which the substrate 5 is housed and held is decompressed. After depressurizing the inside of the processing space 20 to, for example, about 0.6 Pa, the upper heater 21 and the lower heater 22 are activated to start heating of the substrate 5.

基板5或處理空間20內之溫度藉由未圖示之溫度測定機構予以監視,其溫度達到所希望之溫度時,導入氣體至噴淋頭10,使氣體從氣體吹出孔31吹出。此處所用之氣體係 相對於基板5之惰性氣體,例如氮氣等。The temperature in the substrate 5 or the processing space 20 is monitored by a temperature measuring means (not shown). When the temperature reaches a desired temperature, gas is introduced into the shower head 10, and the gas is blown out from the gas blowing hole 31. Gas system used here An inert gas such as nitrogen or the like with respect to the substrate 5.

藉由前述減壓後之氣體置換,以大氣壓或比大氣壓略高之氣體壓力下對基板5加熱。從氣體導入孔15被導入之氣體會如前所述充滿上游室13,此時藉由設於上游室13之內部加熱器18,使上游室13內之氣體加熱。又,該被加熱之氣體通過分散板17之貫通孔32流入下游室14,再從氣體吹出孔31向噴淋頭10之下方吹出。該氣體會被吹附於基板5上而加熱基板5。The substrate 5 is heated by atmospheric pressure or a gas pressure slightly higher than atmospheric pressure by the gas replacement after the decompression. The gas introduced from the gas introduction hole 15 fills the upstream chamber 13 as described above, and at this time, the gas in the upstream chamber 13 is heated by the internal heater 18 provided in the upstream chamber 13. Further, the heated gas flows into the downstream chamber 14 through the through hole 32 of the dispersion plate 17, and is then blown out from the gas blowing hole 31 to the lower side of the shower head 10. This gas is blown onto the substrate 5 to heat the substrate 5.

以被加熱之氣體相對於基板5吹附,藉由上加熱器21及下加熱器22使已受到加熱之基板5之溫度不下降,可進行高效且均勻之加熱處理。僅藉由上加熱器21及下加熱器22之加熱,雖可使基板5在相對較短的時間內昇溫至所希望之溫度,但特別於基板5之尺寸大之情形時易於面方向上產生加熱不均。但,本實施形態中,因除藉由上加熱器21及下加熱器22之加熱外,還從廣佈於基板5之面方向之噴淋頭12使被加熱之氣體吹附於基板5,故可抑制基板5之面方向之加熱不均而均等地進行加熱處理。The heated gas is blown with respect to the substrate 5, and the temperature of the heated substrate 5 is not lowered by the upper heater 21 and the lower heater 22, so that efficient and uniform heat treatment can be performed. Only by heating the upper heater 21 and the lower heater 22, the substrate 5 can be heated to a desired temperature in a relatively short period of time, but is particularly likely to be generated in the plane direction when the size of the substrate 5 is large. Uneven heating. However, in the present embodiment, in addition to the heating by the upper heater 21 and the lower heater 22, the heated head gas is blown onto the substrate 5 from the shower head 12 which is distributed in the direction of the surface of the substrate 5. Therefore, heat treatment can be uniformly performed while suppressing uneven heating in the surface direction of the substrate 5.

此外,如前所述,使氣體在進入噴淋頭10內時不立即吹出,而使其於面方向擴散至充滿噴淋頭10內之程度,故可於面方向無參差地均等吹出氣體。因此,可實現進一步抑制基板5之面方向之加熱不均之均等加熱。Further, as described above, when the gas enters the shower head 10, it is not immediately blown out, but is diffused in the surface direction to the extent that it is filled in the shower head 10. Therefore, the gas can be uniformly blown out without unevenness in the surface direction. Therefore, uniform heating which further suppresses heating unevenness in the surface direction of the substrate 5 can be achieved.

又,如圖1所示,於處理空間20之上下設置包圍處理空間20之周圍之罩23、24,藉此使從噴淋頭10吹出之氣體充滿於處理空間20內。藉此,可較不受排氣口26之位置之影 響,而於基板5之面方向使加熱氣體均勻地分布存在,此亦有助於基板5之均等加熱。Further, as shown in FIG. 1, the covers 23 and 24 surrounding the processing space 20 are provided below the processing space 20, whereby the gas blown from the shower head 10 is filled in the processing space 20. Thereby, it is less affected by the position of the exhaust port 26 The heating gas is uniformly distributed in the direction of the surface of the substrate 5, which also contributes to the uniform heating of the substrate 5.

又,要將被加熱之氣體對基板5吹附時,亦可不於噴淋頭10之內部設加熱器18,而將於噴淋頭10之外部被加熱之氣體導入至噴淋頭10內。惟於噴淋頭10內加熱氣體之做法,更可抑制到達基板5時之氣體之溫度下降而可進行高效之加熱處理。又,內部加熱器18因設置為比貫通孔32及氣體吹出孔31更靠近上游,故可於以多數之小孔使氣體分散前加熱氣體,亦可謀求氣體之面方向之溫度分布之均勻化。Further, when the heated gas is blown to the substrate 5, the heater 18 may be provided inside the shower head 10, and the gas heated outside the shower head 10 may be introduced into the shower head 10. However, by heating the gas in the shower head 10, it is possible to suppress the temperature drop of the gas when reaching the substrate 5, and to perform efficient heat treatment. Further, since the internal heater 18 is disposed closer to the upstream than the through hole 32 and the gas blowing hole 31, it is possible to heat the gas before dispersing the gas in a plurality of small holes, and to uniformize the temperature distribution in the gas surface direction. .

藉由上加熱器21、下加熱器22及氣體之吹附,使基板5以例如100~1000℃之溫度經加熱處理達數分鐘至數十小時。The substrate 5 is subjected to heat treatment at a temperature of, for example, 100 to 1000 ° C for several minutes to several tens of hours by blowing of the upper heater 21, the lower heater 22, and the gas.

又,亦可僅設上加熱器21與下加熱器22之任意一者。惟從加熱初期使基板5在短時間內昇溫至所希望之溫度而謀求整體之處理時間之縮短化之觀點來看,宜設置上加熱器21及下加熱器22兩者。Further, only one of the heater 21 and the lower heater 22 may be provided. However, it is preferable to provide both the upper heater 21 and the lower heater 22 from the viewpoint of heating the substrate 5 to a desired temperature in a short period of time and shortening the overall processing time.

又,藉由於上加熱器21之上設置噴淋頭10,使得上加熱器21之輻射熱不會被噴淋頭10遮蔽,此外,使從噴淋頭10吹出之氣體在通過上加熱器21之複數根護套加熱器間或燈加熱器間而於其時被加熱,可使到達基板5時之溫度不易下降。Further, by providing the shower head 10 on the upper heater 21, the radiant heat of the upper heater 21 is not blocked by the shower head 10, and further, the gas blown from the shower head 10 is passed through the upper heater 21. The plurality of sheathed heaters or the lamp heaters are heated at that time, so that the temperature at which the substrate 5 is reached is not easily lowered.

基板5之加熱處理後,關閉上加熱器21及下加熱器22,且停止來自噴淋頭10之加熱氣體之供給,使基板5之溫度 下降(回到常溫)。此時,要使基板5之溫度盡快下降至常溫之情形時,有效方法是從噴淋頭10將未加熱之氣體吹附於基板5。即,在已關閉內部加熱器18之狀態下將氣體導入噴淋頭10內,並從氣體吹出孔31吹出而吹附於基板5。After the heat treatment of the substrate 5, the upper heater 21 and the lower heater 22 are turned off, and the supply of the heating gas from the shower head 10 is stopped to bring the temperature of the substrate 5 Drop (back to normal temperature). At this time, in order to lower the temperature of the substrate 5 to a normal temperature as soon as possible, it is effective to blow the unheated gas from the shower head 10 to the substrate 5. In other words, the gas is introduced into the shower head 10 while the internal heater 18 is turned off, and is blown out from the gas blowing hole 31 to be blown onto the substrate 5.

此時,與前述加熱時同樣,使氣體無參差地被吹附於基板5之面方向,藉此,可防止基板5之面方向之溫度差所導致之破裂等破損。At this time, in the same manner as in the case of the above-described heating, the gas is blown to the surface direction of the substrate 5 without any difference, whereby breakage such as cracking due to a temperature difference in the surface direction of the substrate 5 can be prevented.

根據以上說明之本發明之實施形態,以上加熱器21及下加熱器22迅速地使基板5昇溫至所希望之溫度,藉由使用噴淋頭10之氣體供給,可一面將氣體無參差地吹附於基板5之全面、一面進行加熱或冷卻。藉此,基板面內不易產生溫度差,可提高處理品質,且防止破損。According to the embodiment of the present invention described above, the heater 21 and the lower heater 22 rapidly raise the temperature of the substrate 5 to a desired temperature, and by using the gas supply of the shower head 10, the gas can be blown without any difference. It is attached to the entire surface of the substrate 5 to be heated or cooled. Thereby, a temperature difference is hard to occur in the surface of the substrate, and the processing quality can be improved and damage can be prevented.

以上參照具體例並對本發明之實施形態進行了說明。但,本發明並非局限於此者,基於本發明之技術思想可進行各種各樣之變形。The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited thereto, and various modifications can be made based on the technical idea of the present invention.

對基板吹附之氣體,只要為相對於基板(亦包含形成於基板之膜等)材料不會產生反應或變質之惰性氣體即可,並非局限於前述實施形態所列舉者。又,亦可改變基板之加熱時與冷卻時之氣體種類。The gas to be blown onto the substrate is not limited to the above-described embodiments as long as it is an inert gas that does not react or deteriorate with respect to the substrate (including a film formed on the substrate). Moreover, the type of gas during heating and cooling of the substrate can also be changed.

5‧‧‧基板5‧‧‧Substrate

10‧‧‧噴淋頭10‧‧‧Sprinkler

12‧‧‧簇射極板12‧‧‧ shower plate

13‧‧‧上游室13‧‧‧Upstream room

14‧‧‧下游室14‧‧‧ downstream room

15‧‧‧氣體導入孔15‧‧‧ gas introduction hole

17‧‧‧分散板17‧‧‧Distribution board

18‧‧‧內部加熱器18‧‧‧Internal heater

20‧‧‧處理空間20‧‧‧Processing space

21‧‧‧上加熱器21‧‧‧Upper heater

22‧‧‧下加熱器22‧‧‧ Lower heater

26‧‧‧排氣口26‧‧‧Exhaust port

31‧‧‧氣體吹出孔31‧‧‧ gas blowing holes

32‧‧‧貫通孔32‧‧‧through holes

圖1係例示本發明之實施形態之熱處理裝置之要部構成之模式圖;圖2係從下側看圖1所示之噴淋頭之立體圖;圖3係同一噴淋頭之剖面圖;及 圖4係圖3所示之噴淋頭之要部之放大圖。1 is a schematic view showing a configuration of a main part of a heat treatment apparatus according to an embodiment of the present invention; FIG. 2 is a perspective view of the shower head shown in FIG. 1 from a lower side; FIG. 3 is a cross-sectional view of the same shower head; Figure 4 is an enlarged view of the main part of the shower head shown in Figure 3.

1‧‧‧密閉容器1‧‧‧Contained container

5‧‧‧基板5‧‧‧Substrate

10‧‧‧噴淋頭10‧‧‧Sprinkler

11‧‧‧天板部11‧‧‧Surface Department

16‧‧‧氣體導入管16‧‧‧ gas introduction tube

18‧‧‧內部加熱器18‧‧‧Internal heater

20‧‧‧處理空間20‧‧‧Processing space

21‧‧‧上加熱器21‧‧‧Upper heater

22‧‧‧下加熱器22‧‧‧ Lower heater

23‧‧‧上罩23‧‧‧Upper cover

24‧‧‧下罩24‧‧‧Under cover

25‧‧‧搬出入口25‧‧‧ moving out of the entrance

26‧‧‧排氣口26‧‧‧Exhaust port

Claims (7)

一種熱處理裝置,其特徵在於具備:相對於大氣可密閉之密閉容器;設於前述密閉容器內,可收容基板之處理空間;於前述密閉容器內與前述處理空間對向設置之加熱器;及噴淋頭,其具有導入相對於前述基板為惰性、加熱或冷卻前述基板之氣體之氣體導入孔,及與前述基板對向設置、且將經由前述氣體導入孔而被導入內部之前述氣體朝向前述基板吹出之複數之氣體吹出孔,且該噴淋頭係設於前述密閉容器內;且於前述噴淋頭之內部設有將前述氣體導入孔側之上游室與前述氣體吹出孔側之下游室分隔之分散板;於前述分散板上形成有使前述上游室與前述下游室連通之複數之貫通孔;前述複數之氣體吹出孔之所有開口之總面積比前述複數之貫通孔之所有開口之總面積為大;於被導入前述氣體之前述噴淋頭之內部中,前述上游室之壓力比前述下游室之壓力為高;從前述氣體吹出孔對已減壓之前述處理空間吹出前述氣體,而將前述處理空間內置換為前述氣體。 A heat treatment apparatus comprising: a sealed container that can be sealed with respect to the atmosphere; a processing space that can accommodate a substrate in the sealed container; a heater that is disposed opposite to the processing space in the sealed container; and a spray a shower head having a gas introduction hole into which a gas which is inert to the substrate and which heats or cools the substrate is introduced, and the gas which is disposed opposite to the substrate and introduced into the inside through the gas introduction hole is directed toward the substrate a plurality of gas blowing holes are blown out, and the shower head is disposed in the sealed container; and an upstream chamber that connects the gas introduction hole side and a downstream chamber on the gas blowing hole side are disposed inside the shower head a dispersion plate; a plurality of through holes for connecting the upstream chamber and the downstream chamber; and a total area of all openings of the plurality of gas blowing holes being larger than a total area of all openings of the plurality of through holes Is large; in the interior of the aforementioned shower head into which the gas is introduced, the pressure of the upstream chamber is higher than that of the downstream chamber High power; blow-out hole from the gas space of the process of blowing the gas has been reduced, and to replace the inside of the gas space of the process. 如請求項1之熱處理裝置,其中前述貫通孔之前述分散板之面方向之位置相對於前述氣體吹出孔之位置係錯開。 The heat treatment apparatus according to claim 1, wherein a position of a surface of the through hole in a surface direction of the dispersion plate is shifted from a position of the gas blowing hole. 如請求項1或2之熱處理裝置,其中於前述噴淋頭內設置有內部加熱器。 The heat treatment apparatus of claim 1 or 2, wherein an internal heater is disposed in the aforementioned shower head. 如請求項3之熱處理裝置,其中前述內部加熱器係設置為比貫通孔及前述氣體吹出孔更靠近上游。 The heat treatment apparatus according to claim 3, wherein the internal heater is disposed closer to the upstream than the through hole and the gas blowing hole. 如請求項1之熱處理裝置,其中前述加熱器具有夾著前述處理空間而對向之一對加熱器。 A heat treatment apparatus according to claim 1, wherein said heater has a pair of heaters opposed to each other across said processing space. 一種熱處理方法,其特徵在於:使收容有基板之處理空間內減壓;於前述減壓後,藉由與前述處理空間對向設置之加熱器將前述基板加熱;藉由前述加熱器之加熱使前述基板或前述處理空間內達到所希望之溫度後,將相對於前述基板為惰性且已加熱之氣體,從與前述基板對向設置之噴淋頭吹附於前述基板而加熱前述基板;前述噴淋頭之內部之上游側與下游側之間藉由分散板被分隔成複數之空間,被導入前述噴淋頭內之前述氣體係於前述複數之空間內擴散、並隨著逐漸向下游側推進壓力緩緩下降。 A heat treatment method for depressurizing a processing space in which a substrate is housed; after the depressurization, heating the substrate by a heater disposed opposite to the processing space; and heating by the heater After the substrate or the processing space reaches a desired temperature, the gas that is inert to the substrate and heated is blown from the shower head disposed opposite the substrate to the substrate to heat the substrate; The upstream side and the downstream side of the inner portion of the shower head are separated into a plurality of spaces by the dispersion plate, and the gas system introduced into the shower head is diffused in the space of the plurality of spaces, and is gradually advanced toward the downstream side. The pressure is slowly falling. 如請求項6之熱處理方法,其中藉由前述加熱器及前述氣體之吹附進行前述基板之加熱後,關閉前述加熱器,且將未受到加熱之氣體從前述噴淋頭吹附於前述基板而冷卻前述基板。 The heat treatment method according to claim 6, wherein the heating of the substrate is performed by blowing the heater and the gas, the heater is turned off, and the unheated gas is blown from the shower head to the substrate. The aforementioned substrate is cooled.
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012225557A (en) * 2011-04-19 2012-11-15 Panasonic Corp Heat treatment device
JP5877358B2 (en) * 2011-04-22 2016-03-08 パナソニックIpマネジメント株式会社 Heat treatment equipment
CN102278890B (en) * 2011-08-18 2014-04-09 苏州大学 Electric heating furnace
CN105157436B (en) * 2015-08-07 2017-11-24 中国科学院宁波材料技术与工程研究所 A kind of heat-treatment furnace being rapidly heated
JP6554516B2 (en) * 2017-08-31 2019-07-31 東京応化工業株式会社 Substrate heating apparatus, substrate processing system, and substrate heating method
JP7356297B2 (en) 2019-09-05 2023-10-04 株式会社トクヤマ Nitriding reactor
KR102404342B1 (en) * 2020-06-09 2022-06-02 한국고요써모시스템(주) Chamber cooling unit of heat treatment oven
KR102238028B1 (en) * 2020-10-22 2021-04-08 주식회사 한화 Closed Heat Treatment Apparatus for Substrate Treatment
JP2023032160A (en) * 2021-08-26 2023-03-09 芝浦メカトロニクス株式会社 Heating processing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006194505A (en) * 2005-01-12 2006-07-27 Seiko Epson Corp Solvent removing device, and solvent removing method
JP2007173481A (en) * 2005-12-21 2007-07-05 Kyushu Nissho:Kk Heating device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3197969B2 (en) * 1993-01-11 2001-08-13 株式会社日立国際電気 Semiconductor substrate processing method
JP3579932B2 (en) * 1994-10-24 2004-10-20 株式会社村田製作所 Panel heater
JP4951840B2 (en) * 2004-03-12 2012-06-13 東京エレクトロン株式会社 Plasma film forming apparatus, heat treatment apparatus, plasma film forming method, and heat treatment method
JP2008020112A (en) * 2006-07-12 2008-01-31 Fujitsu Hitachi Plasma Display Ltd Heating treatment method and device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006194505A (en) * 2005-01-12 2006-07-27 Seiko Epson Corp Solvent removing device, and solvent removing method
JP2007173481A (en) * 2005-12-21 2007-07-05 Kyushu Nissho:Kk Heating device

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TW201013139A (en) 2010-04-01
JPWO2010016421A1 (en) 2012-01-19
WO2010016421A1 (en) 2010-02-11
JP5436429B2 (en) 2014-03-05

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