WO2010016421A1 - Heat treating device and heat treating method - Google Patents
Heat treating device and heat treating method Download PDFInfo
- Publication number
- WO2010016421A1 WO2010016421A1 PCT/JP2009/063555 JP2009063555W WO2010016421A1 WO 2010016421 A1 WO2010016421 A1 WO 2010016421A1 JP 2009063555 W JP2009063555 W JP 2009063555W WO 2010016421 A1 WO2010016421 A1 WO 2010016421A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- gas
- shower head
- heater
- heat treatment
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0083—Chamber type furnaces with means for circulating the atmosphere
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
- F27D11/02—Ohmic resistance heating
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D9/00—Cooling of furnaces or of charges therein
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Definitions
- the present invention relates to a heat treatment apparatus and a heat treatment method.
- Patent Document 1 discloses that a heat treatment is performed on a workpiece by operating a heater provided at a position close to the periphery of the workpiece to be processed while the pressure in the processing chamber is set to a pressure equal to or higher than the atmospheric pressure.
- Patent Document 1 an air flow is generated in the heating chamber by a fan. However, this is not always uniformly applied to the surface to be processed of the workpiece, and the air flow is not heated. Insufficient to heat the surface evenly.
- the present invention has been made in view of the above-described problems, and provides a heat treatment apparatus and a heat treatment method capable of uniformly heat-treating even a large substrate evenly in a plane.
- a sealed container that can be sealed against the atmosphere, a processing space that is provided in the sealed container and can accommodate a substrate, and provided in the sealed container so as to face the processing space.
- a heater a gas introduction hole into which a gas that is inactive to the substrate and heats or cools the substrate is introduced, and is introduced to the inside through the gas introduction hole provided facing the substrate.
- a dispersion plate is provided to partition an upstream chamber and a downstream chamber on the gas outlet side, and the dispersion plate is formed with a plurality of through holes for communicating the upstream chamber and the downstream chamber.
- a heat treatment apparatus is provided.
- the processing space in which the substrate is accommodated is depressurized, and after the depressurization, the substrate is heated by a heater provided facing the processing space.
- a heater provided facing the processing space.
- a gas that is inert to the substrate and heated is sprayed onto the substrate from a shower head provided facing the substrate.
- a heat treatment method is provided that heats the substrate.
- a heat treatment apparatus and a heat treatment method capable of uniformly heat-treating even a large substrate evenly in a plane.
- FIG. 1 The schematic diagram which illustrates the principal part structure of the heat processing apparatus which concerns on embodiment of this invention.
- FIG. 1 is a schematic view illustrating the main configuration of a heat treatment apparatus according to an embodiment of the invention.
- the heat treatment apparatus according to the embodiment of the present invention has a structure in which an upper heater 21, a lower heater 22 and a shower head 10 are provided in a sealed container 1 capable of maintaining an atmosphere sealed with respect to the atmosphere.
- the upper heater 21 and the lower heater 22 are, for example, a sheath heater or a lamp heater in which a heating wire is held in a metal tube.
- the upper heater 21 and the lower heater 22 are provided to face each other, and a processing space 20 is formed between them.
- An upper cover 23 that surrounds the periphery of the processing space 20 is provided at the top of the processing space 20, and a lower cover 24 that surrounds the periphery of the processing space 20 is provided at the bottom of the processing space 20.
- a part of the upper cover 23 and the lower cover 24 is opened, and a carry-in / out port 25 for the substrate 5 is formed.
- the substrate 5 to be processed is transferred into and out of the processing space 20 through the loading / unloading port 25.
- the shower head 10 is provided on the upper heater 21.
- An exhaust port 26 is provided below the lower heater 22.
- An exhaust system such as a vacuum pump (not shown) is connected to the exhaust port 26, and the inside of the sealed container 1 including the processing space 20 is exhausted through the exhaust port 26. Further, the gas blown from the shower head 10 is also exhausted from the processing space 20 through the exhaust port 26. Considering the flow of gas blown from the shower head 10 toward the substrate 5, it is desirable that the exhaust port 26 be below the lower heater 22.
- FIG. 2 is a perspective view of the shower head 10 as viewed from below.
- FIG. 3 is a cross-sectional view of the shower head 10, and
- FIG. 4 is an enlarged view of a main part in FIG.
- the shower head 10 is formed in a square block shape having a planar size close to the area of the substrate 5 to be processed. As shown in FIG. 3, the shower head 10 has an upstream chamber 13 and a downstream chamber partitioned by a dispersion plate 17 therein. 14 are formed.
- the dispersion plate 17 is provided at a substantially middle position in the thickness direction of the shower head 10 and substantially parallel to the surface direction of the shower head 10.
- a gas introduction hole 15 (see FIG. 3) is formed at the center of the top plate portion 11 of the shower head 10, and the gas introduction hole 15 communicates with the upstream chamber 13.
- a gas introduction pipe 16 is connected to the gas introduction hole 15, and the gas introduction pipe 16 is connected to a gas supply source (not shown).
- An upstream chamber 13 is formed between the top plate portion 11 and the dispersion plate 17.
- a shower plate 12 is provided at the bottom of the shower head 10.
- a downstream chamber 14 is formed between the shower plate 12 and the dispersion plate 17.
- a plurality of gas blowout holes 31 are formed in the shower plate 12. As shown in FIG. 2, each gas blowing hole 31 is formed in a slit shape extending in parallel with each other.
- the shower plate 12 faces the processing space 20 via the upper heater 21.
- the upper heater 21 is composed of, for example, a plurality of sheath heaters or lamp heaters, and the gas blown out from the gas outlet holes 31 of the shower plate 12 passes through the gaps between the plurality of sheath heaters or lamp heaters and is accommodated in the processing space 20. Is sprayed onto the substrate 5 that has been applied.
- a plurality of through holes 32 for communicating the upstream chamber 13 and the downstream chamber 14 are formed in the dispersion plate 17.
- the gas introduced into the upstream chamber 13 from the gas introduction hole 15 flows into the downstream chamber 14 through the through hole 32 of the dispersion plate 17, and the gas flowing into the downstream chamber 14 flows from the gas outlet hole 31 of the shower plate 12. Blow outside the shower plate.
- the through holes 32 and the gas blowing holes 31 are arranged so that the gas blowing holes 31 are not positioned (overlap) just below the position of the through holes 32 of the dispersing plate 17 (positions in the surface direction of the dispersing plate 17). The position in the surface direction is shifted. The center of the through hole 32 is located directly above the portion of the shower plate 12 where the gas blowing holes 31 are not formed.
- the total opening area of all the gas blowing holes 31 is made larger than the total opening area of all the through holes 32.
- the opening area of each through hole 32 is made smaller than the opening area of each gas blowing hole 31, and the number of through holes 32 is made smaller than the number of gas blowing holes 31.
- the opening areas of the through holes 32 and the gas blowing holes 31 may be the same, and only the number of the through holes 32 may be reduced.
- the gas introduced into the upstream chamber 13 at a relatively high pressure has the dispersion plate 17 and the total opening area of the through holes 32 formed in the dispersion plate 17 is not so large. Therefore, instead of immediately flowing into the downstream chamber 14, the upstream chamber 13 is filled while diffusing in the surface direction in the upstream chamber 13. The gas filled in the upstream chamber 13 flows into the downstream chamber 14 through the through hole 32 of the dispersion plate 17.
- the gas flowing into the downstream chamber 14 from the through hole 32 of the dispersion plate 17 is immediately shifted from the gas outlet hole 31 to the outside because the positions of the through hole 32 and the gas outlet hole 31 of the shower plate 12 are shifted. Rather than being blown out, the inside of the downstream chamber 14 diffuses in the surface direction and spreads in the downstream chamber 14.
- the momentum (speed and pressure) is gradually reduced, and the gas is uniformly distributed in the surface direction.
- the gas can be uniformly blown from all the gas blowing holes 31 over the entire surface direction of the shower plate 12 without being biased toward the specific gas blowing holes 31.
- a plurality of internal heaters 18 are provided in the shower head 10.
- Each internal heater 18 is supported on the dispersion plate 17 and disposed in the upstream chamber 13, and both ends thereof pass through the side wall of the shower head 10 and are connected to a power source (not shown).
- the substrate 5 to be processed in the embodiment of the present invention is a substrate used for, for example, a flat panel display, a solar cell, etc.
- the heat treatment apparatus according to the present embodiment has a large size with a side length of 1 meter or more. It is effective for uniform heating / cooling treatment of substrates.
- the substrate 5 is carried into the processing space 20 from the carry-in / out entrance 25 by, for example, a carrying robot.
- the substrate 5 is positioned between the upper heater 21 and the lower heater 22 in the processing space 20 and is supported by a support portion (not shown).
- the upper heater 21 faces the upper surface of the substrate 5, and the lower heater 22 faces the lower surface of the substrate 5, and heats the substrate 5 mainly by radiant heat.
- the inside of the sealed container 1 including the processing space 20 in which the substrate 5 is accommodated and held is decompressed. After reducing the pressure in the processing space 20 to about 0.6 Pa, for example, the upper heater 21 and the lower heater 22 are turned on to start heating the substrate 5.
- the temperature in the substrate 5 or the processing space 20 is monitored by a temperature measuring means (not shown). When the temperature reaches a desired temperature, gas is introduced into the shower head 10 and gas is blown out from the gas blowing holes 31.
- the gas used here is an inert gas with respect to the substrate 5, for example, nitrogen gas.
- the substrate 5 is heated under the atmospheric pressure or a gas pressure slightly higher than the atmospheric pressure by the gas replacement after the pressure reduction.
- the gas introduced from the gas introduction hole 15 fills the upstream chamber 13 as described above.
- the gas in the upstream chamber 13 is heated by the internal heater 18 provided in the upstream chamber 13.
- the heated gas flows into the downstream chamber 14 through the through hole 32 of the dispersion plate 17, and is further blown out from the gas blowing hole 31 to the lower side of the shower head 10. This gas is blown against the substrate 5 to heat the substrate 5.
- Blowing the heated gas against the substrate 5 enables efficient and uniform heat treatment without lowering the temperature of the substrate 5 already heated by the upper heater 21 and the lower heater 22.
- the heating of the substrate 5 can be raised to a desired temperature in a relatively short time only by heating by the upper heater 21 and the lower heater 22, but heating unevenness occurs in the surface direction particularly when the size of the substrate 5 is large. It becomes easy.
- the gas heated from the shower plate 12 spreading in the surface direction of the substrate 5 is blown to the substrate 5. Heat treatment can be performed evenly.
- the gas when the gas enters the shower head 10, the gas does not go out immediately, and is diffused in the surface direction to be filled to some extent in the shower head 10, so that it is not biased in the surface direction. Gas can be blown out evenly. For this reason, the uniform heating in which the uneven heating in the surface direction of the substrate 5 is further suppressed is possible.
- the covers 23 and 24 surrounding the processing space 20 are provided above and below the processing space 20 so that the gas blown from the shower head 10 is filled in the processing space 20. be able to. Thereby, the heating gas can be uniformly distributed in the surface direction of the substrate 5 without being affected by the position of the exhaust port 26 so much, which also contributes to the uniform heating of the substrate 5.
- the gas heated outside the shower head 10 may be introduced into the shower head 10 without providing the heater 18 inside the shower head 10. .
- the temperature drop of the gas when it reaches the substrate 5 can be further suppressed, and an efficient heat treatment can be performed.
- the internal heater 18 is provided upstream from the through hole 32 and the gas blowing hole 31, the gas can be heated before the gas is dispersed in a large number of small holes. The temperature distribution can be made uniform.
- the substrate 5 is heat-treated at a temperature of, for example, 100 to 1000 ° C. for several minutes to several tens of hours by blowing the upper heater 21 and the lower heater 22 and gas.
- the upper heater 21 and the lower heater 22 may be provided. However, it is desirable to provide both the upper heater 21 and the lower heater 22 from the viewpoint of increasing the temperature of the substrate 5 to a desired temperature in the initial stage of heating in a short time and reducing the overall processing time.
- the shower head 10 is provided on the upper heater 21, the radiant heat of the upper heater 21 is not blocked by the shower head 10, and a plurality of gases blown from the shower head 10 are generated in the upper heater 21.
- the radiant heat of the upper heater 21 is not blocked by the shower head 10, and a plurality of gases blown from the shower head 10 are generated in the upper heater 21.
- the upper heater 21 and the lower heater 22 are turned off, the supply of the heating gas from the shower head 10 is stopped, and the temperature of the substrate 5 is lowered (returned to normal temperature). At this time, when it is desired to quickly lower the temperature of the substrate 5 to room temperature, it is effective to blow an unheated gas from the shower head 10 onto the substrate 5. That is, gas is introduced into the shower head 10 with the internal heater 18 turned off, blown out from the gas blowing holes 31 and blown onto the substrate 5.
- the gas is sprayed evenly in the surface direction of the substrate 5 without unevenness, thereby preventing breakage such as cracking due to a temperature difference in the surface direction of the substrate 5.
- the substrate 5 is quickly raised to a desired temperature by the upper heater 21 and the lower heater 22, and then the substrate 5 is supplied by gas supply using the shower head 10. Heating and cooling can be performed while spraying gas evenly over the entire surface. This makes it difficult to create a temperature difference in the substrate surface, improving the processing quality and preventing damage.
- the gas blown against the substrate is not limited to those described in the above embodiment as long as it is inert so as not to cause a reaction or alteration to the substrate (including a film formed thereon) material. Further, the gas species may be changed between heating and cooling the substrate.
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Abstract
Description
また、本発明の他の一態様によれば、基板が収容された処理空間内を減圧し、前記減圧後、前記処理空間に対向して設けられたヒータにより前記基板を加熱し、前記ヒータの加熱により前記基板もしくは前記処理空間内が所望の温度になったら、前記基板に対して不活性であり且つ加熱されたガスを、前記基板に対向して設けられたシャワーヘッドから前記基板に吹き付けて前記基板を加熱することを特徴とする熱処理方法が提供される。 According to one aspect of the present invention, a sealed container that can be sealed against the atmosphere, a processing space that is provided in the sealed container and can accommodate a substrate, and provided in the sealed container so as to face the processing space. A heater, a gas introduction hole into which a gas that is inactive to the substrate and heats or cools the substrate is introduced, and is introduced to the inside through the gas introduction hole provided facing the substrate. A plurality of gas blowing holes for blowing the gas toward the substrate, and a shower head provided in the sealed container, wherein the shower head has a gas inlet hole side. A dispersion plate is provided to partition an upstream chamber and a downstream chamber on the gas outlet side, and the dispersion plate is formed with a plurality of through holes for communicating the upstream chamber and the downstream chamber. A heat treatment apparatus is provided.
According to another aspect of the present invention, the processing space in which the substrate is accommodated is depressurized, and after the depressurization, the substrate is heated by a heater provided facing the processing space. When the inside of the substrate or the processing space reaches a desired temperature by heating, a gas that is inert to the substrate and heated is sprayed onto the substrate from a shower head provided facing the substrate. A heat treatment method is provided that heats the substrate.
図1は、本発明の実施形態に係る熱処理装置の要部構成を例示する模式図である。
本発明の実施形態に係る熱処理装置は、大気に対して密閉された雰囲気を維持可能な密閉容器1内に、上ヒータ21、下ヒータ22およびシャワーヘッド10が設けられた構造を有する。上ヒータ21、下ヒータ22は、例えば金属管の中に発熱線を保持したシースヒータ、あるいは、ランプヒータである。上ヒータ21と下ヒータ22とは対向して設けられ、それらの間に処理空間20が形成される。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic view illustrating the main configuration of a heat treatment apparatus according to an embodiment of the invention.
The heat treatment apparatus according to the embodiment of the present invention has a structure in which an
図2はシャワーヘッド10を下側から見た斜視図である。
図3はシャワーヘッド10の断面図であり、図4は図3における要部の拡大図を示す。 Next, details of the
FIG. 2 is a perspective view of the
FIG. 3 is a cross-sectional view of the
10 シャワーヘッド
12 シャワープレート
13 上流室
14 下流室
15 ガス導入孔
17 分散板
18 内部ヒータ
20 処理空間
21 上ヒータ
22 下ヒータ
26 排気口
31 ガス吹出孔
32 貫通孔 5
Claims (9)
- 大気に対して密閉可能な密閉容器と、
前記密閉容器内に設けられ、基板を収容可能な処理空間と、
前記密閉容器内で前記処理空間に対向して設けられたヒータと、
前記基板に対して不活性であり前記基板を加熱または冷却するガスが導入されるガス導入孔と、前記基板に対向して設けられ前記ガス導入孔を介して内部に導入された前記ガスを前記基板に向けて吹き出させる複数のガス吹出孔とを有し、前記密閉容器内に設けられたシャワーヘッドと、
を備え、
前記シャワーヘッドの内部には、前記ガス導入孔側の上流室と前記ガス吹出孔側の下流室とを仕切る分散板が設けられ、前記分散板には前記上流室と前記下流室とを連通させる複数の貫通孔が形成されていることを特徴とする熱処理装置。 A sealed container that can be sealed against the atmosphere;
A processing space provided in the sealed container and capable of accommodating a substrate;
A heater provided facing the processing space in the sealed container;
A gas introduction hole into which a gas that is inert to the substrate and heats or cools the substrate is introduced; and the gas that is provided facing the substrate and introduced into the inside through the gas introduction hole. A plurality of gas blowing holes for blowing toward the substrate, a shower head provided in the sealed container,
With
A dispersion plate is provided inside the shower head to partition the upstream chamber on the gas introduction hole side and the downstream chamber on the gas blow-out hole side, and the dispersion plate communicates the upstream chamber and the downstream chamber. A heat treatment apparatus in which a plurality of through holes are formed. - 前記貫通孔の前記分散板の面方向の位置は、前記ガス吹出孔の位置に対してずれていることを特徴とする請求項1記載の熱処理装置。 The heat treatment apparatus according to claim 1, wherein the position of the through hole in the surface direction of the dispersion plate is deviated from the position of the gas blowing hole.
- 前記複数の貫通孔すべての開口の総面積よりも、前記複数のガス吹出孔すべての開口の総面積の方が大きいことを特徴とする請求項1または2に記載の熱処理装置。 The heat treatment apparatus according to claim 1 or 2, wherein a total area of all the plurality of gas blowing holes is larger than a total area of all the plurality of through holes.
- 前記シャワーヘッド内に、内部ヒータが設けられていることを特徴とする請求項1記載の熱処理装置。 The heat treatment apparatus according to claim 1, wherein an internal heater is provided in the shower head.
- 前記内部ヒータは、前記貫通孔及び前記ガス吹出孔よりも上流に設けられたことを特徴とする請求項4記載の熱処理装置。 The heat treatment apparatus according to claim 4, wherein the internal heater is provided upstream of the through hole and the gas blowing hole.
- 前記ヒータは、前記処理空間を挟んで対向する一対のヒータを有することを特徴とする請求項1記載の熱処理装置。 The heat treatment apparatus according to claim 1, wherein the heater includes a pair of heaters facing each other with the processing space interposed therebetween.
- 基板が収容された処理空間内を減圧し、
前記減圧後、前記処理空間に対向して設けられたヒータにより前記基板を加熱し、
前記ヒータの加熱により前記基板もしくは前記処理空間内が所望の温度になったら、前記基板に対して不活性であり且つ加熱されたガスを、前記基板に対向して設けられたシャワーヘッドから前記基板に吹き付けて前記基板を加熱することを特徴とする熱処理方法。 The processing space in which the substrate is accommodated is depressurized,
After the depressurization, the substrate is heated by a heater provided facing the processing space,
When the substrate or the processing space reaches a desired temperature due to the heating of the heater, a gas that is inert to the substrate and heated is supplied from a shower head provided opposite to the substrate to the substrate. And heat the substrate by spraying on the substrate. - 前記シャワーヘッドの内部における上流側と下流側との間が分散板により複数の空間に仕切られ、前記シャワーヘッド内に導入された前記ガスは前記複数の空間内で拡散されつつ下流側に進むにつれて徐々に圧力が低下されることを特徴とする請求項7記載の熱処理方法。 Between the upstream side and the downstream side in the shower head is partitioned into a plurality of spaces by a dispersion plate, and the gas introduced into the shower head proceeds downstream while being diffused in the plurality of spaces. The heat treatment method according to claim 7, wherein the pressure is gradually reduced.
- 前記ヒータ及び前記ガスの吹き付けによる前記基板の加熱後、
前記ヒータをオフにし、且つ加熱を受けていないガスを前記シャワーヘッドから前記基板に吹き付けて前記基板を冷却することを特徴とする請求項7または8に記載の熱処理方法。 After heating the substrate by spraying the heater and the gas,
9. The heat treatment method according to claim 7, wherein the heater is turned off and the substrate is cooled by spraying an unheated gas from the shower head onto the substrate.
Priority Applications (2)
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CN2009801399336A CN102177407A (en) | 2008-08-08 | 2009-07-30 | Heat treating device and heat treating method |
JP2010523837A JP5436429B2 (en) | 2008-08-08 | 2009-07-30 | Heat treatment apparatus and heat treatment method |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012225620A (en) * | 2011-04-22 | 2012-11-15 | Panasonic Corp | Heat treatment device |
JP2012225557A (en) * | 2011-04-19 | 2012-11-15 | Panasonic Corp | Heat treatment device |
JP2019045061A (en) * | 2017-08-31 | 2019-03-22 | 東京応化工業株式会社 | Base plate heating device, base plate treatment system, and base plate heating method |
JP2021038901A (en) * | 2019-09-05 | 2021-03-11 | 株式会社トクヤマ | Nitriding reaction furnace |
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CN102278890B (en) * | 2011-08-18 | 2014-04-09 | 苏州大学 | Electric heating furnace |
CN105157436B (en) * | 2015-08-07 | 2017-11-24 | 中国科学院宁波材料技术与工程研究所 | A kind of heat-treatment furnace being rapidly heated |
KR102404342B1 (en) * | 2020-06-09 | 2022-06-02 | 한국고요써모시스템(주) | Chamber cooling unit of heat treatment oven |
KR102238028B1 (en) * | 2020-10-22 | 2021-04-08 | 주식회사 한화 | Closed Heat Treatment Apparatus for Substrate Treatment |
JP2023032160A (en) * | 2021-08-26 | 2023-03-09 | 芝浦メカトロニクス株式会社 | Heating processing device |
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JP2006194505A (en) * | 2005-01-12 | 2006-07-27 | Seiko Epson Corp | Solvent removing device, and solvent removing method |
JP2007173481A (en) * | 2005-12-21 | 2007-07-05 | Kyushu Nissho:Kk | Heating device |
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JP3197969B2 (en) * | 1993-01-11 | 2001-08-13 | 株式会社日立国際電気 | Semiconductor substrate processing method |
JP3579932B2 (en) * | 1994-10-24 | 2004-10-20 | 株式会社村田製作所 | Panel heater |
JP4951840B2 (en) * | 2004-03-12 | 2012-06-13 | 東京エレクトロン株式会社 | Plasma film forming apparatus, heat treatment apparatus, plasma film forming method, and heat treatment method |
JP2008020112A (en) * | 2006-07-12 | 2008-01-31 | Fujitsu Hitachi Plasma Display Ltd | Heating treatment method and device |
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- 2009-07-30 JP JP2010523837A patent/JP5436429B2/en active Active
- 2009-07-30 CN CN2009801399336A patent/CN102177407A/en active Pending
- 2009-07-30 WO PCT/JP2009/063555 patent/WO2010016421A1/en active Application Filing
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JP2006194505A (en) * | 2005-01-12 | 2006-07-27 | Seiko Epson Corp | Solvent removing device, and solvent removing method |
JP2007173481A (en) * | 2005-12-21 | 2007-07-05 | Kyushu Nissho:Kk | Heating device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012225557A (en) * | 2011-04-19 | 2012-11-15 | Panasonic Corp | Heat treatment device |
JP2012225620A (en) * | 2011-04-22 | 2012-11-15 | Panasonic Corp | Heat treatment device |
JP2019045061A (en) * | 2017-08-31 | 2019-03-22 | 東京応化工業株式会社 | Base plate heating device, base plate treatment system, and base plate heating method |
JP2021038901A (en) * | 2019-09-05 | 2021-03-11 | 株式会社トクヤマ | Nitriding reaction furnace |
JP7356297B2 (en) | 2019-09-05 | 2023-10-04 | 株式会社トクヤマ | Nitriding reactor |
Also Published As
Publication number | Publication date |
---|---|
CN102177407A (en) | 2011-09-07 |
JPWO2010016421A1 (en) | 2012-01-19 |
TWI400418B (en) | 2013-07-01 |
TW201013139A (en) | 2010-04-01 |
JP5436429B2 (en) | 2014-03-05 |
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