CN100570884C - 半导体结构及其制造方法 - Google Patents

半导体结构及其制造方法 Download PDF

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Publication number
CN100570884C
CN100570884C CNB2006100012856A CN200610001285A CN100570884C CN 100570884 C CN100570884 C CN 100570884C CN B2006100012856 A CNB2006100012856 A CN B2006100012856A CN 200610001285 A CN200610001285 A CN 200610001285A CN 100570884 C CN100570884 C CN 100570884C
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China
Prior art keywords
germanium
oxide
nitride
gate
insulator
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Expired - Fee Related
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CNB2006100012856A
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English (en)
Chinese (zh)
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CN1933175A (zh
Inventor
阿希马·B·查克拉瓦蒂
安东尼·艾·乔
古川俊治
史蒂文·J·霍姆斯
韦斯利·C·纳特兹莱
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10125—Reinforcing structures
    • H01L2224/10126—Bump collar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Drying Of Semiconductors (AREA)
CNB2006100012856A 2005-09-12 2006-01-12 半导体结构及其制造方法 Expired - Fee Related CN100570884C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/905,587 2005-09-12
US10/905,587 US7705385B2 (en) 2005-09-12 2005-09-12 Selective deposition of germanium spacers on nitride

Publications (2)

Publication Number Publication Date
CN1933175A CN1933175A (zh) 2007-03-21
CN100570884C true CN100570884C (zh) 2009-12-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100012856A Expired - Fee Related CN100570884C (zh) 2005-09-12 2006-01-12 半导体结构及其制造方法

Country Status (4)

Country Link
US (3) US7705385B2 (enExample)
JP (2) JP5270067B2 (enExample)
CN (1) CN100570884C (enExample)
TW (2) TWI496221B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735604A (zh) * 2017-04-19 2018-11-02 台湾积体电路制造股份有限公司 晶体管的形成方法

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US7687804B2 (en) * 2008-01-08 2010-03-30 International Business Machines Corporation Method for fabricating a semiconductor structures and structures thereof
US8580646B2 (en) * 2010-11-18 2013-11-12 International Business Machines Corporation Method of fabricating field effect transistors with low k sidewall spacers
KR20160053001A (ko) 2014-10-30 2016-05-13 삼성디스플레이 주식회사 투명 표시 기판, 투명 표시 장치 및 투명 표시 장치의 제조 방법
CN109309006B (zh) * 2017-07-27 2021-10-15 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
JP7221187B2 (ja) * 2019-09-30 2023-02-13 東京エレクトロン株式会社 成膜方法、及び成膜装置

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US5202284A (en) * 1989-12-01 1993-04-13 Hewlett-Packard Company Selective and non-selective deposition of Si1-x Gex on a Si subsrate that is partially masked with SiO2
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN108735604A (zh) * 2017-04-19 2018-11-02 台湾积体电路制造股份有限公司 晶体管的形成方法
CN108735604B (zh) * 2017-04-19 2021-07-23 台湾积体电路制造股份有限公司 晶体管的形成方法

Also Published As

Publication number Publication date
US7705385B2 (en) 2010-04-27
JP2012069964A (ja) 2012-04-05
TW200713464A (en) 2007-04-01
JP5388312B2 (ja) 2014-01-15
US7888241B2 (en) 2011-02-15
US20110034000A1 (en) 2011-02-10
US20080242041A1 (en) 2008-10-02
TWI496221B (zh) 2015-08-11
US20070059894A1 (en) 2007-03-15
JP2007081361A (ja) 2007-03-29
CN1933175A (zh) 2007-03-21
JP5270067B2 (ja) 2013-08-21
TW201403719A (zh) 2014-01-16
US8900961B2 (en) 2014-12-02

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