CN100565807C - 在电荷擦除光学曝光工具中去除吸波长的气体的方法 - Google Patents

在电荷擦除光学曝光工具中去除吸波长的气体的方法 Download PDF

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Publication number
CN100565807C
CN100565807C CNB2007101287719A CN200710128771A CN100565807C CN 100565807 C CN100565807 C CN 100565807C CN B2007101287719 A CNB2007101287719 A CN B2007101287719A CN 200710128771 A CN200710128771 A CN 200710128771A CN 100565807 C CN100565807 C CN 100565807C
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CN
China
Prior art keywords
charge
wavelength
gas
wafer
integrated circuit
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Expired - Fee Related
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CNB2007101287719A
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English (en)
Chinese (zh)
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CN101145520A (zh
Inventor
A·亚诺斯
I·贝里
A·辛诺特
K·斯图尔特
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication of CN101145520A publication Critical patent/CN101145520A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CNB2007101287719A 2001-11-30 2002-12-02 在电荷擦除光学曝光工具中去除吸波长的气体的方法 Expired - Fee Related CN100565807C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/000,772 US6605484B2 (en) 2001-11-30 2001-11-30 Process for optically erasing charge buildup during fabrication of an integrated circuit
US10/000772 2001-11-30

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB028237765A Division CN100336205C (zh) 2001-11-30 2002-12-02 用于擦除在制造集成电路过程中累积的电荷的方法和设备

Publications (2)

Publication Number Publication Date
CN101145520A CN101145520A (zh) 2008-03-19
CN100565807C true CN100565807C (zh) 2009-12-02

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ID=21692962

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2007101287719A Expired - Fee Related CN100565807C (zh) 2001-11-30 2002-12-02 在电荷擦除光学曝光工具中去除吸波长的气体的方法
CNB028237765A Expired - Fee Related CN100336205C (zh) 2001-11-30 2002-12-02 用于擦除在制造集成电路过程中累积的电荷的方法和设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB028237765A Expired - Fee Related CN100336205C (zh) 2001-11-30 2002-12-02 用于擦除在制造集成电路过程中累积的电荷的方法和设备

Country Status (7)

Country Link
US (2) US6605484B2 (enExample)
EP (1) EP1451868A2 (enExample)
JP (1) JP4784851B2 (enExample)
KR (1) KR20040068925A (enExample)
CN (2) CN100565807C (enExample)
AU (1) AU2002346599A1 (enExample)
WO (1) WO2003049182A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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US6787484B2 (en) * 2002-12-17 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Method of reducing visible light induced arcing in a semiconductor wafer manufacturing process
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
CN103364706B (zh) * 2013-07-26 2017-03-08 上海华虹宏力半导体制造有限公司 验收测试装置及一次性可编程器件的验收测试方法
CN103820772B (zh) * 2014-02-12 2016-07-06 清华大学 去除pecvd装置的电荷的系统及其控制方法
US9576801B2 (en) * 2014-12-01 2017-02-21 Qualcomm Incorporated High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

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WO1981003507A1 (fr) * 1980-05-30 1981-12-10 Gao Ges Automation Org Papier-valeur avec marque d'authenticite en matiere luminescente
US4665426A (en) * 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4885047A (en) 1986-08-11 1989-12-05 Fusion Systems Corporation Apparatus for photoresist stripping
JPH01310577A (ja) 1988-06-08 1989-12-14 Seiko Instr Inc 半導体不揮発性メモリ
JPH04152519A (ja) * 1990-10-16 1992-05-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5170091A (en) * 1990-12-10 1992-12-08 Ultraviolet Energy Generators, Inc. Linear ultraviolet flash lamp with self-replenishing cathode
US5117312A (en) * 1991-01-04 1992-05-26 Fusion Systems Corporation Apparatus including concave reflectors and a line of optical fibers
EP0942457A3 (en) * 1992-09-30 2001-04-04 Fusion Lighting, Inc. Electrodeless lamp
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
US5541475A (en) 1993-04-16 1996-07-30 Fusion Lighting, Inc. Electrodeless lamp with profiled wall thickness
FR2707796B1 (fr) * 1993-06-30 1995-10-06 Sgs Thomson Microelectronics Procédé de gravure sous plasma d'une couche conductrice sur une tranche de silicium avec interposition d'une couche isolante mince.
US5530247A (en) * 1994-08-05 1996-06-25 Trw Inc. Millimeter wave imager device using pyroelectric effect
US5587330A (en) * 1994-10-20 1996-12-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5633424A (en) * 1994-12-29 1997-05-27 Graves; Clinton G. Device and methods for plasma sterilization
US5656521A (en) * 1995-01-12 1997-08-12 Advanced Micro Devices, Inc. Method of erasing UPROM transistors
US5648669A (en) * 1995-05-26 1997-07-15 Cypress Semiconductor High speed flash memory cell structure and method
JP3502498B2 (ja) * 1996-01-22 2004-03-02 大日本スクリーン製造株式会社 基板処理装置
JP3872535B2 (ja) * 1996-03-14 2007-01-24 株式会社オーク製作所 ワークの電荷の消去中和装置
EP0848422B1 (en) * 1996-12-16 2002-03-27 STMicroelectronics S.r.l. Process for the manufacture of floating-gate non-volatile memories
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6369420B1 (en) * 1998-07-02 2002-04-09 Silicon Storage Technology, Inc. Method of self-aligning a floating gate to a control gate and to an isolation in an electrically erasable and programmable memory cell, and a cell made thereby
US6091652A (en) * 1998-12-11 2000-07-18 Lsi Logic Corporation Testing semiconductor devices for data retention
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US6350651B1 (en) * 1999-06-10 2002-02-26 Intel Corporation Method for making flash memory with UV opaque passivation layer
US6350699B1 (en) * 2000-05-30 2002-02-26 Sharp Laboratories Of America, Inc. Method for anisotropic plasma etching using non-chlorofluorocarbon, fluorine-based chemistry

Also Published As

Publication number Publication date
AU2002346599A1 (en) 2003-06-17
US6605484B2 (en) 2003-08-12
JP4784851B2 (ja) 2011-10-05
EP1451868A2 (en) 2004-09-01
CN100336205C (zh) 2007-09-05
WO2003049182A3 (en) 2003-09-12
CN1596467A (zh) 2005-03-16
WO2003049182A2 (en) 2003-06-12
CN101145520A (zh) 2008-03-19
US6803319B2 (en) 2004-10-12
JP2005512324A (ja) 2005-04-28
US20030104644A1 (en) 2003-06-05
KR20040068925A (ko) 2004-08-02
US20030180976A1 (en) 2003-09-25

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