JP4784851B2 - 集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置 - Google Patents

集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置 Download PDF

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JP4784851B2
JP4784851B2 JP2003550278A JP2003550278A JP4784851B2 JP 4784851 B2 JP4784851 B2 JP 4784851B2 JP 2003550278 A JP2003550278 A JP 2003550278A JP 2003550278 A JP2003550278 A JP 2003550278A JP 4784851 B2 JP4784851 B2 JP 4784851B2
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gate electrode
radiation pattern
floating gate
integrated circuit
broadband radiation
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Japanese (ja)
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JP2005512324A5 (enExample
JP2005512324A (ja
Inventor
ジェイノス アラン
ベリー アイヴァン
シノット アンソニー
スチュワート ケビン
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アクセリス テクノロジーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2003550278A 2001-11-30 2002-12-02 集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置 Expired - Fee Related JP4784851B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/000,772 US6605484B2 (en) 2001-11-30 2001-11-30 Process for optically erasing charge buildup during fabrication of an integrated circuit
US10/000,772 2001-11-30
PCT/US2002/038310 WO2003049182A2 (en) 2001-11-30 2002-12-02 Process for optically erasing charge buildup during fabrication of an integrated circuit

Publications (3)

Publication Number Publication Date
JP2005512324A JP2005512324A (ja) 2005-04-28
JP2005512324A5 JP2005512324A5 (enExample) 2005-12-22
JP4784851B2 true JP4784851B2 (ja) 2011-10-05

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JP2003550278A Expired - Fee Related JP4784851B2 (ja) 2001-11-30 2002-12-02 集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置

Country Status (7)

Country Link
US (2) US6605484B2 (enExample)
EP (1) EP1451868A2 (enExample)
JP (1) JP4784851B2 (enExample)
KR (1) KR20040068925A (enExample)
CN (2) CN100565807C (enExample)
AU (1) AU2002346599A1 (enExample)
WO (1) WO2003049182A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787484B2 (en) * 2002-12-17 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Method of reducing visible light induced arcing in a semiconductor wafer manufacturing process
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
CN103364706B (zh) * 2013-07-26 2017-03-08 上海华虹宏力半导体制造有限公司 验收测试装置及一次性可编程器件的验收测试方法
CN103820772B (zh) * 2014-02-12 2016-07-06 清华大学 去除pecvd装置的电荷的系统及其控制方法
US9576801B2 (en) * 2014-12-01 2017-02-21 Qualcomm Incorporated High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

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JPH09199460A (ja) * 1996-01-22 1997-07-31 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH09251936A (ja) * 1996-03-14 1997-09-22 Orc Mfg Co Ltd ワークの電荷の消去中和装置およびその方法
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
WO1999054926A1 (en) * 1998-04-17 1999-10-28 Applied Materials, Inc. Improved endpoint detection for semiconductor processes

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WO1981003507A1 (fr) * 1980-05-30 1981-12-10 Gao Ges Automation Org Papier-valeur avec marque d'authenticite en matiere luminescente
US4665426A (en) * 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4885047A (en) 1986-08-11 1989-12-05 Fusion Systems Corporation Apparatus for photoresist stripping
JPH01310577A (ja) 1988-06-08 1989-12-14 Seiko Instr Inc 半導体不揮発性メモリ
JPH04152519A (ja) * 1990-10-16 1992-05-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5170091A (en) * 1990-12-10 1992-12-08 Ultraviolet Energy Generators, Inc. Linear ultraviolet flash lamp with self-replenishing cathode
US5117312A (en) * 1991-01-04 1992-05-26 Fusion Systems Corporation Apparatus including concave reflectors and a line of optical fibers
EP0942457A3 (en) * 1992-09-30 2001-04-04 Fusion Lighting, Inc. Electrodeless lamp
US5541475A (en) 1993-04-16 1996-07-30 Fusion Lighting, Inc. Electrodeless lamp with profiled wall thickness
FR2707796B1 (fr) * 1993-06-30 1995-10-06 Sgs Thomson Microelectronics Procédé de gravure sous plasma d'une couche conductrice sur une tranche de silicium avec interposition d'une couche isolante mince.
US5530247A (en) * 1994-08-05 1996-06-25 Trw Inc. Millimeter wave imager device using pyroelectric effect
US5587330A (en) * 1994-10-20 1996-12-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5633424A (en) * 1994-12-29 1997-05-27 Graves; Clinton G. Device and methods for plasma sterilization
US5656521A (en) * 1995-01-12 1997-08-12 Advanced Micro Devices, Inc. Method of erasing UPROM transistors
US5648669A (en) * 1995-05-26 1997-07-15 Cypress Semiconductor High speed flash memory cell structure and method
EP0848422B1 (en) * 1996-12-16 2002-03-27 STMicroelectronics S.r.l. Process for the manufacture of floating-gate non-volatile memories
US6369420B1 (en) * 1998-07-02 2002-04-09 Silicon Storage Technology, Inc. Method of self-aligning a floating gate to a control gate and to an isolation in an electrically erasable and programmable memory cell, and a cell made thereby
US6091652A (en) * 1998-12-11 2000-07-18 Lsi Logic Corporation Testing semiconductor devices for data retention
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Publication number Priority date Publication date Assignee Title
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
JPH09199460A (ja) * 1996-01-22 1997-07-31 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH09251936A (ja) * 1996-03-14 1997-09-22 Orc Mfg Co Ltd ワークの電荷の消去中和装置およびその方法
WO1999054926A1 (en) * 1998-04-17 1999-10-28 Applied Materials, Inc. Improved endpoint detection for semiconductor processes

Also Published As

Publication number Publication date
AU2002346599A1 (en) 2003-06-17
US6605484B2 (en) 2003-08-12
EP1451868A2 (en) 2004-09-01
CN100336205C (zh) 2007-09-05
WO2003049182A3 (en) 2003-09-12
CN1596467A (zh) 2005-03-16
WO2003049182A2 (en) 2003-06-12
CN101145520A (zh) 2008-03-19
US6803319B2 (en) 2004-10-12
JP2005512324A (ja) 2005-04-28
US20030104644A1 (en) 2003-06-05
KR20040068925A (ko) 2004-08-02
US20030180976A1 (en) 2003-09-25
CN100565807C (zh) 2009-12-02

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